Mikhail Basov- PhD
- R&D Engineer at All Russia Research Institute of Automatics
Mikhail Basov
- PhD
- R&D Engineer at All Russia Research Institute of Automatics
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About
39
Publications
5,236
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Introduction
Mikhail Basov received the M.Sc. and Ph.D. degree from MEPhI 2012 and 2022, respectively. He works as R&D Engineer at the Dukhov Automatics Research Institute (VNIIA) since 2010. He is the author of 11 articles, 16 Russian patents, and 15 conference paper. He received the award of University Technology Exposure Program by Wevolver, Mouser Electronics and ANSYS in 2022, and Innovative Leader in the Nuclear Industry by Rosatom in 2019, and Brish Young Scientists Competition by FSUE VNIIA in 2023
Current institution
Education
August 2013 - September 2023
September 2006 - March 2012
Publications
Publications (39)
The small silicon chip of Schottky diode (0.8 × 0.8 × 0.4 mm³) with planar arrangement of electrodes (chip PSD) as temperature sensor, which functions under the operating conditions of pressure sensor, was developed. The forward current-voltage I-V characteristic of chip PSD is determined by potential barrier between Mo and n-Si (ND = 3 × 10¹⁵ cm⁻³...
Research of pressure sensor chip utilizing novel electrical circuit with bipolar-junction transistor-based (BJT) piezosensitive differential amplifier with negative feedback loop (PDA-NFL) for 5 kPa differential range was done. The significant advantages of developed chip PDA-NFL in the comparative analysis of advanced pressure sensor analogs, whic...
The theoretical model and experimental characteristics of ultra-high sensitivity MEMS pressure sensor chip for 1 kPa utilizing a novel electrical circuit are presented. The electrical circuit uses piezosensitive differential amplifier with negative feedback loop (PDA-NFL) based on two bipolar-junction transistors (BJT). The BJT has a vertical struc...
A mathematical model of a high-sensitivity pressure sensor with a novel electrical circuit utilizing a piezosensitive transistor differential amplifier with negative feedback loop is presented. Circuits utilizing differential transistor amplifiers based on vertical n-p-n and lateral p-n-p transistors are analyzed and optimized for sensitivity to pr...
![Fig. 1. MEMS pressure sensors sales growth in 2016-2023 [1].](profile/Mikhail-Basov/publication/339616856/figure/fig1/AS:864522092957696@1583129537379/MEMS-pressure-sensors-sales-growth-in-2016-2023-1_Q320.jpg)
The paper presents MEMS pressure sensor chip utilizing novel electrical circuit with bipolar-junction transistor-based (BJT) differential amplifier with negative feedback loop (PDA-NFL). Pressure sensor chips with two circuits have been manufactured and tested: the first chip uses circuit with vertical n-p-n (V-NPN) BJTs and the second-circuit with...
A new assembly design of pressure sensitive element has been developed for pressure range of 25…160 kPa, which can be used as part of any kovar package. The advantages of this development are the high mechanical strength and low errors in relation to the currently used analogue
The microassembly of pressure sensor chip with the modernized basic structure for the increase of stability and mechanical strength is presented in this patent. The classical structure of the piezoresistive pressure sensor chip uses the full Wheatstone bridge circuit with 4 piezoresistive resistors. The microassembly structure is necessary for the...
The microassembly of pressure sensor chip with an upgraded basic structure for improved long-term stability is presented in this patent. The classic structure of a piezoresistive pressure sensor chip uses a full Wheatstone bridge circuit with 4 piezoresistive resistors. The microassembly structure is necessary for better mechanical decoupling of th...
The stability of pressure sensor chip output characteristics using the piezoresistive method in the form of microelectromechanical system (MEMS) is one of the most important features for sensors. The research analyzes the changes in the useful signal, as well as errors of highly sensitive pressure sensor chips. The main feature of this development...
Long-term stability of output characteristics of piezoresistive pressure sensor chips in the form of microelectromechanical system (MEMS) is one of the most important parameters. The research analyzes the variation of useful signal of high sensitive pressure sensor chips and its errors in mechanical and temperature characteristics, which are also t...
The absolute pressure sensor in the case contains a sensitive element of absolute pressure, consisting of a silicon integrated pressure chip, where a structure with an electrical circuit in the form of a resistive bridge is formed on the front side and a membrane structure is formed on the reverse side; the structure of a silicon base with the uppe...
The absolute pressure sensor contains a sensing element of absolute pressure, consisting of a silicon integrated pressure chip, a silicon base structure with an upper and lower part in the form of rectangular regular parallelepipeds, where the length of the edge of the horizontal edges of the upper part of the base is 2 to 5 times greater than the...
The difference from the prototype (RU 212797 U1) is the formation of smooth figures between the lower and upper parts of the base. Smooth transition areas have a surface shape in the form of a cylinder (vertically and horizontally cut of the base). Thanks to this design of the base, the residual mechanical stresses on the chip are reduced more.
Th...
The difference from the prototype (RU 212797 U1) is the formation of a stop element on the upper surface of the base, which is used to create a volume with vacuum between the base and the chip. The height of the silicon stop has different dimensions depending on the specific bending of the chip membrane for different absolute pressure ranges. When...
Characteristics of high sensitivity MEMS pressure sensor chip for 10 kPa utilizing a novel electrical circuit are presented. The electrical circuit uses piezosensitive differential amplifier with negative feedback loop (PDA-NFL) based on two bipolar-junction transistors (BJT). The BJT has a vertical structure of n-p-n type (V-NPN) formed on a non-d...
There are two version of Thesis. "Thesis Abstract" is the short version in English. "Thesis" is the full version in Russian (only Table of Contents and Introduction in English).
The topic of this thesis is devoted to the use of various solutions for electrical circuits of pressure sensor (PS) chips. The piezoresistive differential amplifier (PDA)...
The absolute pressure sensor contains silicon pressure sensor chip, which is connected with silicon pedestal with complex structure by low temperature glass. Pressure sensor chip uses piezoresistive effect on piezoresistors in Wheatstone bridge circuit. The assembly process made in vacuum field, which is saved between backside of pressure sensor ch...
The absolute pressure sensor contains silicon pressure sensor chip, which is connected with silicon pedestal by low temperature glass. Pressure sensor chip uses piezoresistive effect on piezoresistors in Wheatstone bridge circuit. The assembly process made in vacuum field, which is saved between backside of pressure sensor chip and pedestal. The ga...
The small-sized temperature sensor chip in a form of Schottky diode with reduced consumption, increased breakdown voltage and high linear temperature coefficient was developed. The temperature sensor chip is located in the single case of pressure sensor module. The research presents development adventures over previously used analogs of temperature s...
High sensitivity MEMS pressure sensor chip for different ranges (1 to 60 kPa) utilizing the novel electrical circuit of piezosensitive differential amplifier with negative feedback loop (PDA-NFL) is developed. Pressure sensor chip PDA-NFL utilizes two bipolar-junction transistoHigh sensitivity MEMS pressure sensor chip for different ranges (1 to 60...
The patent is presented in the original version in Russian. The invention is a combination of pressure sensor in the form of a separate chip with temperature sensor in the form of a separate chip. Both sensors are located on a single case. The main objective of the invention is the use of a new small-sized temperature sensor (0.8x0.8x0.4 mm) instea...
High sensitive (S = 11.2 ± 1.8 mV/V/kPa with nonlinearity error 2KNL = 0.15 ± 0.09%/FS) small-sized (4.00x4.00 mm^2) silicon pressure sensor chip utilizing new electrical circuit for microelectromechanical systems (MEMS) in the form of differential amplifier with negative feedback loop (PDA-NFL) for 5 kPa differential was developed. The advantages...
The patent is presented in the original version in Russian. The invention is combination of pressure sensor as separate chip with temperature sensor as separate chip. Sensors are located on the single case. Main goal of this invention is using new small temperature sensor (0.8x0.8x0.4 mm) for classic pressure sensor (4.0x4.0x2.8 mm). The method of...
The invention is the pressure sensor as separate chip with combination of silicon construction with integral temperature sensor as separate chip. The pressure sensor with reduced power consumption temperature sensor are located on the single case, which has the ways for possibility of supplying differential pressure to the pressure sensor, eight pi...
The investigation of the pressure sensor chip’s design developed for operation in ultralow differential pressure ranges has been conducted. The optimum geometry of a diaphragm has been defined using available technological resources. The pres-sure sensor chip with an area of 6.15×6.15 mm has an average sensitivity S of 34.5 mV/kPa/V at nonlinearity...
A mathematical model of an ultrahigh sensitivity piezoresistive chip of a pressure sensor with a range from −0.5 to 0.5 kPa has been developed. The optimum geometrical dimensions of a specific silicon membrane with a combination of rigid islands to ensure a trade-off relationship between sensitivity (Ssamples = 34.5 mV kPa⁻¹ V⁻¹) and nonlinearity (...
The development relates to pressure sensors as silicon microelectromechanical systems (MEMS). The pressure sensor chip has reverse side - membrane with three rigid islands. The development advantage is the greater output sensitivity of new circuitry for analyzing the dependence of output signal on pressure. In contrast to the conventional use of an...
The development relates to pressure sensors as silicon microelectromechanical systems (MEMS). The pressure sensor chip has reverse side - membrane with rigid island. The development advantage of pressure sensor chip is the greater thermal compensation of new circuitry. Using the developed pressure sensor chips based piezoresistive differential ampl...
The creation of pressure sensor chip in the form of microelectromechanical systems is one of the progressive directions in microelectronics, which, along with all areas of the semiconductor industry, determines the trends in modern production of electronic equipment. One of the relevant vectors for the development of pressure sensor silicon chips w...
The article translated from Russian to English on pp. 373 - 376. The paper presents the design of a silicon pressure sensitive elements (SEP) with stops. Stops are providing resistance of overload pressure. The advantage of stops was proved. The required size between the membrane and stops for working displacement of the membrane was determined. Th...
The utility model relates to the field of measurement technology and automation. The integral sensitive element of the pressure sensor can be used as small-sized pressure-to-electrical transducers. The integral sensitive element of the pressure sensor is formed on a silicon chip having an epitaxial layer of n-type conductivity and a substrate of p+...
The utility model relates to the field of measurement technology and automation. The integral sensitive element of the pressure sensor can be used as small-sized pressure-to-electrical transducers. The integral sensitive element of the pressure sensor is formed on a silicon chip having an epitaxial layer of n-type conductivity and a substrate of p+...
The utility model relates to the field of measurement technology and automatics. This model can be used in small-sized pressure-to-electrical transducers as pressure sensor. The pressure sensitive element contains an integral pressure chip (as transducer). The chip has a front side with piezoresistors, electrical connections and contact pads. All e...
The tendencies of development for modern control and management systems testify to the growing urgency of using converters physical quantities. The primary element of monitoring and control systems that supplies data for pressure of gas and liquid are the pressure sensors (PS). Since the 60s of the last century and up to date the most common princi...
The article translated from Russian to English on pp. 691-693 (please, look down). The paper summarizes results of investigation of high-sensitivity MEMS pressure sensor based on a circuit containing both active and passive stress-sensitive elements: a differential amplifier utilizing two n-p-n piezotransistors and for p-type piezoresistors. A comp...
The patent summarizes results of investigation of high-sensitivity MEMS pressure sensor based on a circuit containing both active and passive stress-sensitive elements: a differential amplifier utilizing two n-p-n piezotransistors and for p-type piezoresistors. A comparative analysis of a sensor utilizing this circuit with a pressure sensor based o...
Precision sensors for monitoring and control systems is growing requirement, which providing data of pressure by gas and liquid. Requirement parametric characteristics determining the errors of the microelectromechanical system (MEMS) are increasing. The electrical circuit of pressure sensor (PS) by differential amplifier (PSDA) where both active (...
The article has a two version - English and Russian (please, select your language).The paper describes modeling of high-sensitivity MEMS pressure sensor based on a circuit containing both active and passive stress-sensitive elements: a differential amplifier utilizing two n-p-n transistors and four p-type piezoresistors. The analysis on the basis o...
Usage: for small pressure transducer into an electrical signal. Summary of the utility model is that the integral element formed on a chip having an epitaxial layer made of silicon n-type conductivity, and a substrate made of a silicon p + -type conduction membrane and includes roadway and pressure measurement circuit further comprises a temperatur...
Questions
Questions (3)
Hello, researchers!
I need to get in practice the exact values of the surface resistance values and depth of the p-n junction for the doped impurity for MEMS pressure sensor. This task was decided to simulate the software TCAD (G-2012.06). A number of different types of doped regions were compared with experimental samples (silicon n-doped phosphorus Nn = 2.5e15 cm-3). An example of doping of the p-region boron with RS = 200 ohm/sq and xj = 1.62 um is given. Below is given text file with syntax of writing the process for certain parameters of decomposition grid and impurity distribution laws. This area has a good match for modeling with respect to experiment.
Do you think that these parameters are sufficient or too high to accurately reproduce the experiment? This question arose, because with further modeling of more complex structures of bipolar transistors, the calculation process takes a lot of time. The computer's capabilities, unfortunately, are limited.
Thank you!
Is it possible to consider the dependence for resistance base region of a bipolar transistor (vertical or lateral structure, NPN or PNP) by mechanical deformation, as the dependence for region of the integral resistor based by the p-n junction?
Which structure of the transistor is the most sensitive to pressure? A vertical NPN transistor and a vertical/lateral PNP transistor are considered. Which structure of the transistor will be the least sensitive to temperature and will have the lowest noise component of the output signal?
