Miika Mattinen

Miika Mattinen
University of Helsinki | HY · Department of Chemistry

Doctor of Philosophy

About

40
Publications
6,336
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726
Citations
Citations since 2017
34 Research Items
710 Citations
2017201820192020202120222023050100150
2017201820192020202120222023050100150
2017201820192020202120222023050100150
2017201820192020202120222023050100150

Publications

Publications (40)
Article
Full-text available
Semiconducting 2D materials, such as SnS2, hold great promise in a variety of applications including electronics, optoelectronics, and catalysis. However, their use is hindered by the scarcity of deposition methods offering necessary levels of thickness control and large‐area uniformity. Herein, a low‐temperature atomic layer deposition (ALD) proce...
Article
Full-text available
Semiconducting two-dimensional (2D) materials are studied intensively because of their promising performance in diverse applications from electronics to energy storage and catalysis. Recently, HfS2 and ZrS2 have emerged as potential rivals for the commonly studied 2D semiconductors such as MoS2 and WSe2, but their use is hindered by the difficulty...
Article
Semiconducting 2D materials, such as SnS2, hold immense potential for many applications ranging from electronics to catalysis. However, deposition of few‐layer SnS2 films has remained a great challenge. Herein, continuous wafer‐scale 2D SnS2 films with accurately controlled thickness (2 to 10 monolayers) are realized by combining a new atomic layer...
Article
Molybdenum disulfide (MoS2) is a semiconducting 2D material, which has evoked wide interest due to its unique properties. However, the lack of controlled and scalable methods for the production of MoS2 films at low temperatures remains a major hindrance on its way to applications. In this work, atomic layer deposition (ALD) is used to deposit cryst...
Article
Full-text available
Atomic layer deposition offers outstanding film uniformity and conformality on substrates with high aspect ratio features. These qualities are essential for mixed-halide perovskite films applied in tandem solar cells, transistors and light-emitting diodes. The optical and electronic properties of mixed-halide perovskites can be adjusted by adjustin...
Article
Full-text available
Two-dimensional transition metal dichalcogenides, such as MoS2, are intensely studied for applications in electronics. However, the difficulty of depositing large-area films of sufficient quality under application-relevant conditions remains a major challenge. Herein, we demonstrate deposition of polycrystalline, wafer-scale MoS2, TiS2, and WS2 fil...
Article
Gadolinium fluoride is an attractive optical material with applications in, e.g., deep-UV lithography, solar cells, and medical imaging. Despite the interest toward this material, no atomic layer deposition (ALD) process has been published. In this article, an ALD process for GdF3 using Gd(thd)3 and NH4F as precursors is presented. The deposition w...
Article
Full-text available
Co9S8 is an interesting sulfide material with metallic conductivity that has shown promise for various energy applications. Herein, we report a new atomic layer deposition process producing crystalline, pure, and highly conductive Co9S8 thin films using CoCl2(TMEDA) (TMEDA = N,N,N',N'-tetramethylethylenediamine) and H2S as precursors at 180-300 °C....
Article
Full-text available
This article describes the deposition of AlF3/polyimide nanolaminate film by inorganic-organic atomic layer deposition (ALD) at 170 °C. AlCl3 and TiF4 were used as precursors for AlF3. Polyimide layers were deposited from PMDA (pyromellitic dianhydride, 1,2,3,5-benzenetetracarboxylic anhydride) and DAH (1,6-diaminohexane). With field-emission scann...
Article
Lanthanide fluoride thin films have gained interest as materials for various optical applications, including electroluminescent displays and mid-IR lasers. However, the number of atomic layer deposition (ALD) processes for lanthanide fluorides has remained low. In this work, we present an ALD process for TbF3 using tris(2,2,6,6-tetramethyl-3,5-hept...
Article
2D transition metal dichalcogenides (TMDCs) are among the most exciting materials of today. Their layered crystal structures result in unique and useful electronic, optical, catalytic, and quantum properties. To realize the technological potential of TMDCs, methods depositing uniform films of controlled thickness at low temperatures in a highly con...
Article
Full-text available
Atomic layer deposition (ALD) is a viable method for depositing functional, passivating, and encapsulating layers on top of halide perovskites. Studies in that area have only focused on metal oxides, despite a great number of materials that can be made with ALD. This work demonstrates that, in addition to oxides, other ALD processes can be compatib...
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Full-text available
Herein, we report an atomic layer deposition (ALD) process for Cu2O thin films using copper(II) acetate [Cu(OAc)2] and water vapor as precursors. This precursor combination enables the deposition of phase-pure, polycrystalline, and impurity-free Cu2O thin films at temperatures of 180–220 °C. The deposition of Cu(I) oxide films from a Cu(II) precurs...
Article
Full-text available
This work presents preparation of nickel germanide (Ni2Ge) thin films by atomic layer deposition (ALD). The films were grown using NiCl2(tmpda) (tmpda = N,N,N’,N’,-tetramethyl-1,3-propanediamine) and tributylgermanium hydride (TBGH) serving as a new, efficient reducing agent. This is the first time ALD NixGey films are prepared directly upon the co...
Article
Optoelectronic materials can source, detect, and control light wavelengths ranging from gamma and x rays to ultraviolet, visible, and infrared regions. Optoelectronic devices are usually systems that transduce electricity to optical signal or vice versa. Optoelectronic devices include many modern necessities such as lamps, displays, lasers, solar c...
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This article describes the atomic layer deposition (ALD) of nickel nitride and nickel thin films using a diamine adduct of Ni(II) chloride, NiCl2(TMPDA) (TMPDA = N,N,N′,N′,‐tetramethyl‐1,3‐propanediamine), as the metal precursor. Owing to the high reducing power of tert‐butylhydrazine (TBH), the films are grown at low temperatures of 190–250 °C. Th...
Article
The authors demonstrate multilayer epitaxial films by atomic layer deposition and postdeposition annealing. Their example features two ABO3 type perovskite oxide films with different materials properties - a conductor (LaNiO3) and an insulator (SrTiO3) - that can be integrated epitaxially once the geometric interaction between the two oxides' latti...
Article
Tungsten disulfide (WS 2 ) is a semiconducting 2D material, which is gaining increasing attention in the wake of graphene and MoS 2 owing to its exciting properties and promising performance in a multitude of applications. Herein, the authors deposited WS x thin films by atomic layer deposition using W 2 (NMe 2 ) 6 and H 2 S as precursors. The film...
Article
In this paper, results on the solid state reactions of atomic layer deposited Li 2 CO 3 with HfO 2 and ZrO 2 are reported. An Li 2 CO 3 film was deposited on top of hafnia and zirconia, and the stacks were annealed at various temperatures in air to remove the carbonate and facilitate lithium diffusion into the oxides. It was found that Li ⁺ ions ar...
Article
Atomic layer deposition (ALD) enables deposition of numerous materials in thin film form, yet there are no ALD processes for metal iodides. Herein, we demonstrate an ALD process for PbI2, a metal iodide with 2D structure that has applications in areas such as photodetection and photovoltaics. The process uses a lead silylamide Pb(btsa)2 and SnI4 as...
Article
Heteroleptic bis(tert-butylimido)bis(N,N’-diisopropylacetamidinato) compounds of molybdenum and tungsten are introduced as precursors for atomic layer deposition (ALD) of tungsten and molybdenum oxide thin films using ozone as the oxygen source. Both precursors have similar thermal properties, but exhibit different growth behavior. With the molybde...
Article
Intermetallics form a versatile group of materials that possess unique properties ranging from superconductivity to giant magnetoresistance. The intermetallic Co–Sn and Ni–Sn compounds are promising materials for magnetic applications as well as for anodes in lithium‐ and sodium‐ion batteries. Herein, a method is presented for the preparation of Co...
Article
Full-text available
Molybdenum forms a range of oxides with different stoichiometries and crystal structures, which lead to different properties and performance in diverse applications. Herein, crystalline molybdenum oxide thin films with controlled phase composition are deposited by atomic layer deposition. The MoO2(thd)2 and O3 as precursors enable well-controlled g...
Article
Rhenium is both a refractory metal and a noble metal that has attractive properties for various applications. Still, synthesis and applications of rhenium thin films have been limited. We introduce here the growth of both rhenium metal and rhenium nitride thin films by the technologically important atomic layer deposition (ALD) method over a wide d...
Article
Rhenium is both a refractory metal and a noble metal that has attractive properties for various applications. Still, synthesis and applications of rhenium thin films have been limited. We introduce here the growth of both rhenium metal and rhenium nitride thin films by the technologically important atomic layer deposition (ALD) method over a wide d...
Article
La2O3 thin films were deposited by atomic layer deposition from a liquid heteroleptic La precursor, La(ⁱPrCp)2(ⁱPr-amd), with either water, ozone, ethanol, or both water and ozone (separated by a purge) as the oxygen source. The effect of the oxygen source on the film growth rate and properties such as crystallinity and impurities was studied. Satu...
Article
In this paper, we introduce a new Co precursor for the atomic layer deposition (ALD) of Co metal and other Co containing materials. CoCl2(TMEDA) (TMEDA = N,N,N',N'-tetramethylethylenediamine) is a diamine adduct of cobalt(II) chloride that is inexpensive and easy to synthesize making it an industrially viable precursor. Furthermore, CoCl2(TMEDA) sh...
Article
2D materials research is advancing rapidly as various new “beyond graphene” materials are fabricated, their properties studied, and materials tested in various applications. Rhenium disulfide is one of the 2D transition metal dichalcogenides that has recently shown to possess extraordinary properties such as that it is not limited by the strict mon...
Article
Deposition of zinc glutarate thin films by atomic layer deposition is studied at 200–250 °C using zinc acetate and glutaric acid as the precursors. The films are characterized by UV–vis spectrophotometry, X-ray diffraction, Fourier transform infrared spectroscopy, field emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, at...
Article
Tin oxide thin films were grown by atomic layer deposition(ALD) from bis[bis(trimethylsilyl)amino]tin(II) with ozone and water. The ALDgrowth rate of tin oxide films was examined with respect to substrate temperature, precursor doses, and number of ALD cycles. With ozone two ALD windows were observed, between 80 and 100 °C and between 125 and 200 °...
Article
Full-text available
Hybrid halide perovskite thin films are applicable in a wide range of devices such as light-emitting diodes, solar cells, and photodetectors. The optoelectronic properties of perovskites together with their simple and inexpensive film deposition methods make these materials a viable alternative to established materials in these devices. However, th...
Article
Nucleation and conformality are important issues, when depositing thin films for demanding applications. In this study, iridium and iridium dioxide (IrO2) films were deposited by atomic layer deposition (ALD), using five different processes. Different reactants, namely, O2, air, consecutive O2 and H2 (O2 + H2), and consecutive O3 and H2 (O3 + H2) p...
Article
Atomic layer deposition (ALD) is an advanced thin film deposition method based on self-limiting surface reactions, which allow controlled deposition of conformal, high-quality thin films of various materials. In this study we aimed to explore how modifying the deposition chemistry affects the growth and properties of iridium films. We demonstrated...
Article
Copper(II) oxide thin films were grown by atomic layer deposition (ALD) using bis-(dimethylamino-2-propoxide)copper [Cu(dmap)2] and ozone in a temperature window of 80–140 °C. A thorough characterization of the films was performed using x-ray diffraction, x-ray reflectivity, UV‐Vis spectrophotometry, atomic force microscopy, field emission scanning...
Article
Full-text available
A focused ion beam (FIB) is otherwise an efficient tool for nanofabrication of silicon structures but it suffers from the poor thermal stability of the milled surfaces caused by segregation of implanted gallium leading to severe surface roughening upon already slight annealing. In this paper we show that selective etching with KOH:H2O2 solutions re...
Article
Bi2Te3 thin lms were deposited by Atomic Layer Deposition (ALD) from BiCl3 and (Et3Si)2Te at 160-300 C. The process was studied in detail, and growth properties typical to ALD were veried. Films were stoichiometric with low impurity content. Film thickness was easily controlled with the number of deposition cycles. Properties of the ALD Bi2Te3 thin...

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Project (1)
Project
https://app.dimensions.ai/details/grant/grant.7031512, https://cordis.europa.eu/project/id/765378, http://hycoat.eu/. Molecular Layer Deposition