Miia Mäntymäki

Miia Mäntymäki
University of Helsinki | HY · Department of Chemistry

PhD

About

15
Publications
2,480
Reads
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293
Citations
Additional affiliations
January 2020 - present
University of Helsinki
Position
  • Lecturer
October 2018 - December 2019
Aalto University
Position
  • University teacher
October 2017 - October 2018
Picosun Oy
Picosun Oy
Position
  • Engineer
Education
June 2010 - June 2017
University of Helsinki
Field of study
  • Inorganic chemistry
January 2009 - June 2010
University of Helsinki
Field of study
  • Inorganic Chemistry
September 2005 - December 2008
University of Helsinki
Field of study
  • Chemistry

Publications

Publications (15)
Article
Lithium fluoride (LiF) is an important optical material with a low refractive index and a large band gap. In this study, thin films of LiF are deposited using atomic layer deposition (ALD). Lithd and TiF4 are used as precursors, and they produce crystalline LiF in the temperature range 250–350 °C. The films are studied with UV-Vis spectrometry, fie...
Article
Lithium fluoride is an interesting material because of its low refractive index and large band gap. Previously LiF thin films have been deposited mostly by physical methods. In this study a new way of depositing thin films of LiF using atomic layer deposition (ALD) is presented. Mg(thd)2, TiF4 and Lithd were used as precursors, and they produced cr...
Article
Full-text available
Nickel-rich layered oxides, such as LiNi0.6Co0.2Mn0.2O2 (NMC622), are high-capacity electrode materials for lithium-ion batteries. However, this material faces issues, such as poor durability at high cut-off voltages (>4.4 V vs Li/Li⁺), which mainly originate from an unstable electrode–electrolyte interface. To reduce the side reactions at the inte...
Article
In this paper, results on the solid state reactions of atomic layer deposited Li 2 CO 3 with HfO 2 and ZrO 2 are reported. An Li 2 CO 3 film was deposited on top of hafnia and zirconia, and the stacks were annealed at various temperatures in air to remove the carbonate and facilitate lithium diffusion into the oxides. It was found that Li ⁺ ions ar...
Article
Full-text available
Lithium-ion batteries are the enabling technology for a variety of modern day devices, including cell phones, laptops and electric vehicles. To answer the energy and voltage demands of future applications, further materials engineering of the battery components is necessary. To that end, metal fluorides could provide interesting new conversion cath...
Thesis
Link to full text: http://hdl.handle.net/10138/184135 The increasing interest in both portable electronic devices and electric vehicles has given rise to a new wave of research into lithium-ion batteries. Lithium-ion batteries are the technology of choice for these applications, as they offer both high power and high energy densities. However, muc...
Article
The ternary lithium aluminum fluoride Li3AlF6 is formed from two optically interesting fluorides, LiF and AlF3. It has been reported to have a large electronic bandgap with a reasonable lithium-ion conductivity at room temperature, making it a potential electrolyte material for solid state lithium-ion batteries. Because of complications during atte...
Article
Lithium containing multicomponent oxides are important materials for both lithium-ion batteries and optical applications. In most cases thin films of these materials are desired. Atomic layer deposition (ALD) is a thin film deposition method that is known to deposit high quality films by sequential self-limiting surface reactions. However, the reac...
Article
15N nuclear reaction analysis (NRA) for H is combined with 1.2MeV deuteron (D) NRA which provides a simultaneous analysis for Li, Be, B, C, N, O and F. The energy dependence of the D NRA has been measured and used to correct for the D energy loss in film being analyzed. A 2MeV He RBS measurement is made. Film composition is determined by a self-con...
Article
Aluminum fluoride thin films have potential in both optic and lithium-ion battery applications. AlF3 thin films have mostly been deposited using physical vapor deposition methods. In this study, we present a new atomic layer deposition process for AlF3. Our method makes use of a halide-halide exchange reaction with AlCl3 and TiF4 as the precursors....
Article
Atomic layer deposition (ALD) processes for the growth of ZrO2 and TiO2 were developed using novel precursors. The novel processes were based on cycloheptatrienyl (CHT, -C7H7) - cyclopentadienyl (Cp, -C5H5) compounds of Zr and Ti, offering improved thermal stability and purity of the deposited oxide films. The (CpZrCHT)-Zr-Me/O-3 ALD process yielde...
Article
HfO2 thin films were grown at temperatures between 250 and 400°C by atomic layer deposition using novel cyclopentadienyl–alkylamido precursors, namely CpHf(NMe2)3 and (CpMe)Hf(NMe2)3 (Cp, cyclopentadienyl=C5H5). Ozone was used as the oxygen source. The self-limiting growth mode was verified at 300°C with a growth rate of 0.7–0.8Å/cycle, depending o...

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