Michael Meisser

Kiel University | CAU · Faculty of Engineering, Service Center Education

This paper encompasses the design, manufacture and electrical characterisation of full-SiC half-bridge modules suited for high-frequency operation. The modules consist of stacked AlN DCB substrates equipped with SiC MOSFETs and SiC JFETs. The parasitic inductances of the modules were minimised by the use of a press contact system instead of contact...

This paper encompasses the design, manufacture and electrical characterisation of full-SiC modules optimised for high frequency operation. The parasitic inductances of the module were minimised by abandonment of contact leads while the use of AlN DCB substrates ensures an excellent heat transfer to the heat-sink. The low parasitic inductances of th...

This dissertation presents novel methods of operating dielectric barrier discharge (DBD) excimer lamps with short, high-voltage pulses of favourable wave-shape in order to ensure operation at highest efficiency. Novel and state-of-the-art power electronic pulse inverter topologies are investigated, experimentally validated and classified in terms o...

Plasmas used for the generation of optical radiation as those exited in Dielectric Barrier Discharge (DBD) lamps are beneficially operated in pulsed mode. Because the plasma requires peak voltages of some Kilovolts, conventional topologies are transformer based. In contrast, this paper presents a transformer-less, two-component pulse generator. The...

A dielectric barrier discharge (DBD) light source, characterized as a capacitive load with a poor power factor, is operated with the sinusoidal pulse (SP) topology to obtain high efficiency of the radiation source as well as of the electronic control gear. The topology provides a pulse consisting of three sinusoidal half-waves that causes three alt...

A novel leadframe based power module concept with double sided cooling (DSC) is presented. The DSC module is attached to pin fin coolers using epoxy based insulation sheets. Three different insulation sheets are evaluated. The material analysis of the insulation sheets reveals that alumina particles enhance the thermal performance of the epoxy mate...

Low Temperature Silver Sintering is a suitable process to attach SiC dies used in high temperature power modules. Typically, these modules are operated above 200 °C. This paper investigates the properties of newly proposed electroless Ni/Pd/Ag layers (ENEPEAg) and electroless Pd/Ag layers (EPEAg) as surface finish on copper DCBs for power modules....

The thermal performance of a novel copper leadframe IGBT half-bridge power module with an epoxy based insulation sheet and a second leadframe module with an insulated graphite sheet is compared. Thermal simulation as well as computational fluid dynamic (CFD) simulation with COMSOL Multiphysics are performed in order to determine the thermal resista...

This paper presents the design, manufacture and characterization of connector-less 1200 V SiC MOSFET half-bridge power modules based on AlN DCB substrate. The modules contain four MOSFETs and no external antiparallel diodes. They are rated for a current of 40 A and include a shunt. Static and dynamic measurement results are presented. Multiphysics...

Low-temperature low-pressure silver sintering is a die attachment process for highly reliable power modules. The quality of the sintered interconnection strongly depends on the properties of substrate metal, the die metallization and the sinter paste. This paper investigates the properties of chips sintered at 10 MPa and 250 °C on recently proposed...

Silicon carbide transistors in TO247 packages are widespread despite of their limitations regarding parasitic inductance and power dissipation if an electrically insulated heat-sink attach is required. This paper publishes a comprehensive study on the static performance of commercially available SiC discrete transistors. The devices were characteri...

This paper encompasses the design, manufacture and static electrical characterisation of a full-SiC 1200 V half-bridge module with integrated gate drivers and DC-link capacitors. The module is based on copper thick-film (CTF) on a 850 mm² AL2O3 substrate. At a heat-sink temperature of 80 °C, the module can carry a continuous current of 25 A. CTF su...

The demand for compact and highly integrated power electronic devices is growing continuously. However, the increase in power density leads to higher operation temperatures of the power modules causing premature device failures. One of the major failure sources is the standard SAC solder to attach the die. Novel low temperature silver sinter die at...

Leistungselektronikmodule bilden das Herz der elektronischen Energiewandlung und sind daher essen-tieller Bestandteil von Systemen aus den Bereichen erneuerbare Energien, Energieverteilungsnetze und der Elektromobilität. Im Vergleich zu kommerziell erhältlichen Modulen basiert die hier vorgestellte Modulstruktur nicht auf DCB-Substraten, sondern au...

This paper encompasses the design and the manufacture of a full-SiC module based on copper thick-film. Both DC-link capacitors as well as gate drives are implemented onto the substrate in order to minimise parasitic inductances. Thus, the module is especially suitable for high-frequency operation such as inductive energy transfer and inverter sy...

This paper covers a theoretical approach on understanding the impact of parasitic inductances in power modules. Simulations provide a fundamental insight into the influence of parasitic inductances on the maximum switching speed, i.e. the minimum voltage rise time. Based on this, strategies for parasitic inductance minimization are outlined. The co...

Substrates for high power electronic systems are dominated by DCB-technology. Recently, new copper thick-film pastes have been proposed for use as high power substrates. They are compatible with Al2O3- and pre-oxised AlN-substrates. This production processes to build up highly reliable power modules and explores basis electrical paper investigates...

Die vorliegende Erfindung stellt eine elektroni-sche Bauteilanordnung mit einem Leistungselektronik-modul (2) und einem übergeordneten Schaltungsträger (3) bereit. Dabei weist das Leistungselektronikmodul zumindest eine elektrisch leitende Lage (4) und der über-geordnete Schaltungsträger zumindest eine weitere elektrisch leitende Lage (5) als Oberf...

https://depatisnet.dpma.de/DepatisNet/depatisnet?action=pdf&docid=EP000002887392A2

This paper presents the results of controlling the switching speed (dv/dt) of an optimized version of the capacitor-clamped normally-on Silicon Carbide (SiC) JFET cascode. The cascode circuit is an easy way to employ the normally-on SiC JFET in a normally-off configuration using a low-voltage Silicon (Si) MOSFET in series connection. The traditiona...

Wide-bandgap semiconductors as Silicon-Carbide (SiC) lead to devices with smaller body capacitances and better figure of merit. Thereby, SiC supports the continuous rise of operating frequency and switching speed of switched mode power supplies. However, parasitic elements coming from the real world setup as packages and conductor layout gain more...

Wide bandgap semiconductors as Silicon Carbide (SiC) lead to devices with smaller body capacitances and thereby support the continuous rise of operating frequency and switching speed of switch mode power supplies. However, parasitic elements coming from the real world setup gain more and more impact on system performance. In order to identify paras...

In this paper the electrical and thermal characteristics of commercially available SiC devices, normally-on and-off JFETs as well as a MOSFET, and of a high-voltage Si-MOSFET are presented. The mentioned characteristics are compared and it is shown which characteristics are the limiting factors when designing power electronics devices based on SiC...

This paper reports about emerging techniques for the efficient drive of Dielectric Barrier Discharge (DBD) plasma light sources in pulsed operation mode. Besides a classification of pulse topologies, the novel Universal Sinusoidal Pulse topology, that provides high voltage amplification and high frequency operation, is presented. Transformer...

Dielectric barrier discharge (DBD) lamps are capacitive loads that require pulsed operation to provide a homogeneous discharge distribution and consequently high lamp efficiency. As DBDs have a low Power Factor (PF) and almost dirac-like power consumption, resonant mode driving circuits are ad- vantageous. In order to avoid restrictions of transf...

This paper presents a new transformer-less topology and switching pattern to drive dielectric barrier discharge (DBD) lamps in pulsed operation mode. Supplied by a 450 V intermediate supply, pulses with peak voltage exceeding 1.5 kV are generated by a resonant principle. Driving a DBD lamp with CDBD = 2.76 nF at a pulse frequency of 1.15 MHz, an el...

Die vorliegende Erfindung betrifft eine Schaltungsanordnung sowie ein Verfahren für den Betrieb einer kapazitiven Last, insbesondere einer dielektrisch behinderten Entladungslampe. Die Schaltungsanordnung setzt sich aus einem Primärkreis und einem Sekundärkreis zusammen, die sich beide einer gemeinsamen Drossel als Speicherelement bedienen. Der Pri...

Dielectric barrier discharges (DBD) are mainly capacitive loads that are to be charged and discharged within periods in the microsecond range to obtain high plasma efficiency. Based on a resonant principle, the presented topology generates a single period sinusoidal HF pulse that leads to two lamp ignitions per pulse. A DBD lamp with C DBD = 2.9...

The UV water disinfection for example needs efficient lamps with high power densities. Xe2^* dielectric barrier discharges (DBDs) with phosphor coating can be used due to plasma efficiencies up to 60 % at pulsed electrical power densities of 0.04 W/cm^2 [1]. The power density can be increased by pressure or (operation) frequency. However, the plasm...

Xenon excimer dielectric barrier discharges are used as VUV sources or as plane light sources with phosphor coating. The plasma efficiency of up to 65% [1] depends on the excitation waveform and rises by pulsed operation compared to sinusoidal excitation. However, loss processes and efficiency gain are not completely known. This is caused by the di...

Die Erfindung betrifft ein Verfahren, das es ermöglicht, die Spannung stromintensiver Gleichstromverbraucher mit minimaler Verlustleistung und somit hohem Wirkungsgrad zu stellen. Durch das Verfahren der Überlagerung einer pulsweitenmodulierten Versorgungsspannung mit einer betragsmäßig niedrigeren Gleichspannung wird ein Lücken des Verbraucherstro...