Melania Rossi

• University of Campania "Luigi Vanvitelli"

GaN nanowires with diameters ranging between 50 and 500 nm were investigated by electrical and photoinduced current techniques to determine the influence of their size on the opto-electronic behavior of nanodevices. The conductivity, photoconductivity, and persistent photoconductivity behavior of GaN nanowires are observed to strongly depend on the...

Hydrogenated nanocrystalline silicon for photovoltaic applications has been investigated by using scanning force microscopy. Morphological properties as well as electrical properties have been investigated with high spatial resolution by scanning force microscopy analyses. Transmission electron microscopy studies have been also carried out for stru...

Structural analysis of nanocrystalline silicon layers deposited on oxidized and non-oxidized silicon substrates and on glass substrates by low-energy plasma-enhanced chemical vapour deposition was carried out by means of transmission electron microscopy. Low magnification and high resolution observations of specimens performed in plan-view and cros...

Hydrogenated nanocrystalline silicon (nc-Si:H) is a very promising material for photovoltaic applications. Notwithstanding its wide application as instrinsic layer in solar cells, many issues regarding its electronic and optical properties are not completely understood. The influence of crystal defects and impurities on the physical properties of n...

Surface photovoltage spectroscopy and spectral photoconductivity measurements have been carried out in the UV spectral region on GaN nanowires to analyze the near band-edge region. The results reveal the presence of tails in the band−band absorption spectra. Surface Photovoltage spectra performed on the as-grown nanowire ensamble show a long band t...

Presently, there is a high interest in silicon-based optical devices that would render possible the development of fully silicon-based optoelectronics. Being an indirect-gap semiconductor, silicon is poorly efficient as a light emitter since radiative emission is limited by carrier recombination at non-radiative centers. One of the possible approac...

Nanocrystalline silicon (nc-Si) already attracted a considerable attention as a promising material for photovoltaic applications, while its full opto-electronic potentiality is still under investigation, due to the relatively poor knowledge of the correlations between growth conditions, microstructure and physical properties. This paper aims at the...

Scanning Kelvin probe and surface photovoltage methods have been implemented in a single tool to obtain information on surface, as well as on bulk, electronic properties of mono- and multicrystalline Si wafers. The two combined methods allow for the measurement, in a noncontacting and nondestructive way, of three parameters: minority carrier diffus...

It is well known that, as device geometries continue to shrink, contaminants such as micro particles as well as metallic and organic contaminants have an ever-increasing impact on device yields. Therefore their detection and identification are of great importance for the microelectronics industry. In this work, the possibility to detect surface con...

Scanning Kelvin Probe (SKP) and Surface Photovoltage (SPV) methods have been implemented in a single tool in order to get information on surface, as well as on bulk, electronic properties of crystalline Si wafers. The two combined methods allow for the measurements in non contact and non destructive way of three parameters: minority carrier diffusi...

Scanning Kelvin Probe (SKP) and Surface Photovoltage (SPV) methods have been implemented on the same stage in order to get information on surface, as well as on bulk, electronic properties of multi-crystalline Si wafers. The two probes allow for the measurements of three different parameters: the diffusion length, the majority carrier distribution...

The performance of photovoltaic devices is greatly influenced by the surface characteristics such as surface roughness and presence of organic contaminants; therefore, their measurement is of great importance for photovoltaic industry. Moreover, these parameters should be measured by non-contact, fast methods capable of application as in-line techn...

Surface photovoltage (SPV) method for the characterization of multicrystalline silicon material for photovoltaic applications has been investigated, in view of its application as in-line characterization tool in photovoltaic industry. Minority carrier diffusion lengths have been measured by SPV on as-grown multicrystalline Si wafers as well as on e...