Md Maruf Hossain- Shahjalal University of Science and Technology
Md Maruf Hossain
- Shahjalal University of Science and Technology
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3
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Publications (3)
In this paper, Performances are analyzed of an AlGaN/GaN-based High Electron Mobility Transistor for different device structures. As the 2DEG well forms in the interface of two different bad gap material in HEMT is not infinite energy potential well. Thus there will be a probability of electron carriers appearing outside of the 2DEG well in the bar...
In this paper, Performances are analyzed of an AlGaN/GaN-based High Electron Mobility Transistor for different device structures. Structural Change is based upon a new undoped AlGaN layer between channel and barrier layer in conventional HEMT. The impact of this structural change on AlGaN/GaN HEMT performance is compared with respect to the perform...
