Md. Soyaeb Hasan

Military Institute of Science & Technology, Dhaka, Bangladesh · EECE

In recent years, silicon‐based room temperature Terahertz (THz) detectors have become the most optimistic research area because of their high speed, low cost, and unimpeded compatibility with mainstream complementary metal‐oxide‐semiconductor (CMOS) device technologies. However, Silicon (Si) suffers from low responsivity and high noise at THz frequ...

Molecular perovskites are a class of materials that have attracted considerable attention in recent years due to their unique physical characteristics, structural properties, and diverse applications. These materials are also known as Hybrid Organic-Inorganic Perovskite (HOIP) and are denoted by the general formula ABX3. HOIP materials feature a...

Recently, inorganic perovskite materials have been achieved with broad consideration in photovoltaic technology owing to their exceptional structural, electronic, and optical properties. This work comprehensively studied the impact of the biaxial compressive and tensile strain on the structural, electronic, and optical properties of the inorganic h...

In this paper, the performance of GaAs and GaSb based sub-10 nm double-gate junctionless metal-oxide-semiconductor field-effect transistors (DG-JLMOSFETs) have been studied for high-performance switching applications. The quantum transmitting boundary method (QTBM) has been considered for electron transport, and the band structures are accounted fo...

In this paper, the performance of GaAs and GaSb based sub-10 nm double-gate junctionless metal-oxide-semiconductor field-effect transistors (DG-JLMOSFETs) have been studied for highperformance switching applications. The quantum transmitting boundary method (QTBM) has been considered for electron transport, and the band structures are accounted for...

This paper has studied the metal–insulator-semiconductor (MIS) contact for both p- and n-InGaN. We found that the insulator layer thickness has a remarkable effect on the Fermi level pinning and barrier height reduction in MIS contacts. Schottky’s formation with doped InGaN is explained by extending the MIS contacts’ using the metal-induced gap sta...

An analytical model has been developed to investigate the activation energy profile in Mg-doped p-AlxGa1−xN alloy for the entire range of Al composition. For any Al content, the calculated activation energy quantitatively shows a good agreement with experimental result which has also been confirmed by both Hydrogen atom model and effective Bohr rad...

This paper explicates the temperature induced localization dynamics of exciton in Mg0.14Zn0.86O alloyed semiconductor. The photoluminescence (PL) spectroscopy measurement has been performed at the temperatures ranging from 16 K to 180 K. The linewidths of the PL bands reveal the W-shaped behavior with temperature. We also observe the temperature in...

The formation of ohmic contact to p-InGaN has been analyzed here using the Metal induced Gap States (MIGS) model with an ultrathin interfacial layer of insulator. The position of Fermi level and barrier height modulation has been investigated for two different combinations of Metal-Insulator with p-InGaN. In case of p-InGaN with 2nm layer of NiO, A...

The temperature-dependent anomalous optical properties of AlInGaN quaternary alloys have been studied using Monte Carlo simulation of phonon-assisted exciton hopping. The simulation results agreed well with the experimental photoluminescence linewidths and the peak energy positions while considering the additional inhomogeneous broadening with band...

This paper elucidates the details of exciton localization dynamics in InGaN/GaN and GaN/AlInN quantum wells (QWs) using Monte Carlo simulation for a wide range of temperatures (10–300 K). We find that the phonon-induced variation of exciton lifetimes has remarkable effects on the photoluminescence (PL) peak position and the line-width. The red-shif...

The optical properties of one dimensional (1D) structures are dominated by the excitonic behaviour which are formed by optical absorption. The excitonic properties in III-nitride based cylindrical quantum wires (QWRs) have been investigated theoretically. The confinement of the electron and the hole is subjected for the peculiarities of the exciton...

The models for investigating the phase diagram of InGaN thin films have been anticipated by considering the effects of strain energy, the self-energy of misfit dislocations and surface energy to Gibbs free energy. Total Gibb's free energy varies with Indium composition and thickness of the epitaxial thin film. The calculated results indicate that o...

In this study the effect of dislocation density on the performance of InGaN based multi junction solar cell has been calculated analytically. It is found that dislocation density adversely affects the open circuit voltage, short circuit current density and conversion efficiency of a solar cell. Efficiency is found to be improved with the increase i...

The parameters that influence the performance of solar cell, minority carrier lifetime is a crucial one. The increase of minority carrier lifetime results in higher conversion efficiency. Minority carrier lifetime is determined and analyzed for InGaN single junction solar cell at different excess carrier concentrations by considering the effect of...

Performance of InxGa1-xN-based Multi-Junction Solar Cell (MJSC) having up to 8-junction is analyzed in this paper. An equivalent circuit based model has been developed using MATLAB/Simulink for InxGa1-xN-based MJSC considering the effect of tunnel junction. By using this model it is possible to analyze the behavior and characteristics of single jun...

In this paper the barrier height control of n-type InGaN has been demonstrated by a simple physics based unified model. Metal induced gap states (MIGS) model for metal-semi-conductor contact has been extended to metal-insulatorsemiconductor (MIS) contact for unpinning of Fermi level and low contact resistivity formation. Metal/n-In 0.2 Ga 0.8 N con...

Due to providing a wide direct-band gap, the III-nitride material system has become crucial for high-efficiency photovoltaic. But phase separation, great challenge for the growth of InxGa1−xN epitaxy, tends to reduce the short circuit current as well as pin down the open circuit voltage. On the basis of this obligation, a mathematical modelling of...

It is imperative to determine the dependence of the quality and characteristics of the epitaxial film on different growth parameters. A mathematical model has been developed showing the effect of different growth parameters e.g. temperature, TMI and TEG flow rate, molar ratio on epitaxial film. This model is considered for InGaN film on GaN templat...

It is imperative to determine the dependence of the quality and characteristics of the epitaxial film on different growth parameters. A mathematical model has been developed showing the effect of different growth parameters e.g. temperature, TMI and TEG flow rate, molar ratio on epitaxial film. This model is considered for InGaN film on GaN templat...