Mathilde Gobet

Mathilde Gobet
University of Applied Sciences and Arts Western Switzerland · Faculty of Engineering and Architecture

About

6
Publications
4,921
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182
Citations
Citations since 2017
0 Research Items
35 Citations
201720182019202020212022202301234567
201720182019202020212022202301234567
201720182019202020212022202301234567
201720182019202020212022202301234567

Publications

Publications (6)
Article
Full-text available
This paper presents micro-machining results obtained by combining a short-pulse 10 ns green laser with the water jet-guided laser technology. The short pulse duration offers significant advan- tages for a wide range of applications. Experimental results of semiconductor grooving, edge isola- tion and P1 fabrication step of thin film solar cells, as...
Conference Paper
The water jet-guided laser technology has found a broad range of applications in the micromachining field. Its principle is to focus a laser beam into a hair-thin, low-pressure water jet, onto the sample. This hybrid system prevents heat damage to the material by cooling the cutting edges in between the laser pulses; simultaneously the water jet re...
Article
Full-text available
Multiple-wavelength laser arrays at 1.55 µm are key components of wavelength division multiplexing (WDM) systems for increased bandwidth. Vertical cavity surface-emitting lasers (VCSELs) grown on GaAs substrates outperform their InP counterparts in several points. We summarize the current challenges to realize continuous-wave (CW) GaInNAsSb VCSELs...
Article
Quantum cascade lasers based on planar quantum wells have emerged as a leading candidate for infrared laser sources. However, these lasers are ultimately limited by phonon emission, and exhibit useful optical gain only for the tranverse magnetic polarization. Quantum dot (QD) gain material to replace the planar gain regions is very attractive becau...
Article
Full-text available
We have optimized the molecular-beam epitaxy growth conditions of self-organized InAs/GaAs quantum dots (QDs) to achieve a low density of dots emitting at 1300 nm at low temperature. We used an ultralow InAs growth rate, lower than 0.002 ML/s, to reduce the density to 2 dots/mum2 and an InGaAs capping layer to achieve longer emission wavelength. Mi...

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