Mathieu Perrin

Institut National des Sciences Appliquées de Rennes | INSA Rennes · Département de Science et Génie des Matériaux (SGM)

A membrane external-cavity surface-emitting laser (MECSEL) with an InAs/InP quantum dot (QD) based gain region is demonstrated. The pumping scheme employs a 90° off-axis parabolic mirror to focus the diode laser pump beam to a nearly circular pump spot. With this pump arrangement, the QD MECSEL with SiC heat spreaders produced 320 mW output power a...

We present the first demonstration of a vertical cavity surface emitting laser (VCSEL) based on InAs quantum dots (QDs) on InP. A very high density of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/x...

Highly polar materials are usually preferred over weakly polar ones to study strong electron-phonon interactions and its fascinating properties. Here, we report on the achievement of simultaneous confinement of charge carriers and phonons at the vicinity of a 2D vertical homovalent singularity (antiphase boundary, (APB)) in an (In, Ga)P/SiGe/Si sam...

We report high-power second-harmonic generation of 760 nm laser light from optically-pumped vertical-external-cavity surface-emitting laser based on quantum dot active medium. The laser generates ~1.2 W in fundamental transverse mode with fixed linear polarization. The emission wavelength can be continuously tuned from 738 to 778 nm by using an int...

A high-power InAs quantum dot (QD) vertical-external-cavity surface-emitting laser emitting at 1.5 μm is reported. The active region employs 20 layers of high-density Stranski–Krastanow InAs quantum dots on an InP substrate. The QD density and emission wavelength were independently adjusted by employing a double-cap growth sequence. Optimization of...

Spectral dependence of Lamb coupling constant C is experimentally investigated in an InGaAlAs Quantum Wells active medium. An Optically-Pumped Vertical-External-Cavity Surface-Emitting Laser is designed to sustain the oscillation of two orthogonally polarized modes sharing the same active region while separated in the rest of the cavity. This laser...

In 1964, W. E. Lamb introduced a mode-coupling constant C to characterize the stability of a dual-mode laser. Considering quantum-dot semiconductor lasers, we calculate analytically C in the framework of a rate-equation model, which includes both the homogeneous broadening of the quantum-dot emission and the dot-to-dot carrier exchange due to wetti...

Optical absorption and thermal conductivity of GaAsPN absorbers grown on GaP are investigated by optical absorption spectroscopy and photo‐thermal deflection spectroscopy (PDS). First, the strong dependence of optical absorption on As content is shown: with a maximum absorption coefficient of 38,000 cm‐1 below the GaP bandgap. Optical absorption an...

European Materials Research Society - Spring Meeting 2016 (E-MRS 2016 Spring Meeting), May 2016, Lille, France

Structural, electronic properties and carrier dynamics in InGaAs(N)/GaP quantum dots

Carrier injection in GaP-based laser waveguides and dilute nitrides gain medium

Surfactant mediated growth of strained InAs/AlAs0.56 Sb 0.44 quantum wells on InP (001) substrate is investigated. X ray diffraction and transmission electron microscopy analysis reveal that the supply of antimony on InAs surface delays the 2D to 3D growth transition and allows the growth of thick InAs/AlAsSb quantum wells. Quantum well as thick as...

We report on the structural and optical properties of (In,Ga)AsN self-assembled quantum dots grown on GaP (001) substrate. A comparison with nitrogen free (In,Ga)As system is presented, showing a clear modification of growth mechanisms and a significant shift of the photoluminescence spectrum. Low temperature carrier recombination dynamics is studi...

The nature of the ground optical transition in (In, Ga)As/GaP quantum dots is thoroughly investigated through k·p calculations and a supercell tight-binding simulation. Quantum dot morphology is deduced from scanning-tunneling-microscopy images. The strain field has a strong influence on the conduction band states. Indeed, for a pure GaAs QD, the w...

This paper presents the recent advances in device engineering towards the fabrication of an electrically pumped laser on GaP substrate for photonic integration on silicon. The letter first presents the electrical properties of a GaP-based PIN diode, in particular the reduction of the characteristic resistance of the p-contact, thanks to a judicious...

We report an InP based vertical cavity surface emitting laser (VCSEL) achieving a lasing operation between 1529 and 1646 nm. This optically-pumped VCSEL includes a wide-gain bandwidth active region based on InAs quantum dashes and wideband dielectric Bragg mirrors. Based on a wedge microcavity design, we obtain a spatial dependence of the resonant...

We report on the quantitative study of microtwins (MT) defects in the GaP/Si(0 0 1) thin film grown by Molecular Beam Epitaxy and the optical properties of GaAsP(N)/GaP(N) quantum wells grown on top of the GaP/Si pseudo-substrates. A 780 nm photoluminescence at room temperature from the GaAsPN quantum wells is measured on silicon. Time-resolved pho...

AlGaP alloy and InGaAs/GaP quantum dots are studied toward possible solutions for the cladding layers and the active zone of a pseudomorphic laser structure on silicon. Coherent growth of AlGaP layers on GaP substrate is carefully analysed by X-ray reciprocal space mapping. The influence of Al content on refractive index is studied by spectroscopic...

GaAsPN compounds for Si photonics

Intégration optique par croissance directe de nanostructures III-V sur silicium

We report on an optically excited InAs quantum dash vertical cavity surface emitting lasers (VCSEL) on InP substrate. By introducing a wedge microcavity design, we obtain a spatial dependence of the resonant wavelength along the wafer, enabling us to monitor the gain material bandwidth. In this paper we show a continuously variable VCSEL emission f...

The structural properties of (In,Ga)As/GaP quantum dots (QDs) are studied by plane view and cross scanning tunneling microscopy. Time-resolved and pressure dependent photoluminescence experiments show a ground optical transition of indirect type. Mixed k.p/tight-binding simulations indicate a possible indirect to direct crossover depending on indiu...

We compare the potentiality of bulk InGaPN and GaAsPN materials quasi-lattice-matched to silicon (Si), for multi-junction solar cells application. Bandgaps of both bulk alloys are first studied by a tight-binding model modified for nitrogen incorporation in diluted regimes. The critical thicknesses of those alloys are then calculated for various co...

Lattice-matched GaP-based nanostructures grown on silicon substrates is a highly rewarded route for coherent integration of photonics and high-efficiency photovoltaic devices onto silicon substrates. We report on the structural and optical properties of selected MBE-grown nanostructures on both GaP substrates and GaP/Si pseudo-substrates. As a firs...

L’intégration d’émetteurs ou d’absorbeurs optiques efficaces sur substrat de silicium est un enjeu de taille pour d’une part le développement de la photonique sur silicium (lasers intégrés) et d’autre part les cellules solaires photovoltaïques très haut rendement. Dans cette communication, les derniers résultats sur la croissance cristalline direct...

(In,Ga)As/GaP(001) quantum dots (QDs) are grown by molecular beam epitaxy and studied both theoretically and experimentally. The electronic band structure is simulated using a combination of k.p and tight-binding models. These calculations predict an indirect to direct crossover with the In content and the size of the QDs. The optical properties ar...

We study in detail self-assembled (In,Ga)As quantum dots grown on GaP substrate from the structural, theoretical, and optical points of view. Single quantum dot morphology is first determined at the atomic level using plane-view scanning tunneling microscopy. Unusual C2 symmetry properties with high-index {136} facets are demonstrated for small qua...

We report a structural study of molecular beam epitaxy-grown lattice-matched GaP/Si(0 0 1) thin layers with an emphasis on the interfacial structural properties, and optical studies of GaAsP(N)/GaP(N) quantum wells coherently grown onto the GaP/Si pseudo substrates, through a complementary set of characterization tools. Room temperature photolumine...

We study the effect of Sb mediated growth on InAs layers on AlAsSb on InP substrate. The structural and optical characterisations show that InAs QW of at least 8ML can be grown without elastic relaxation in the presence of Sb on surface. Without Sb, critical thicknesses for Stranski-Krastanov transition thinner than 3ML are usually observed[6]. The...

Polarization controlled quantum dashes (QDHs) Vertical Cavity Surface Emitting Lasers (VCSELs) emitting at 1.6 µm grown on InP(001) are investigated and compared with a quantum well (QW) similar VCSEL. Polarization stability of optically-pumped VCSELs under a low frequency modulation is investigated. While major fluctuations of the polarization-res...

Band structure calculations of strained Ga(NAsP) quantum wells are performed within the framework of the extended-basis sp3d5s* tight-binding model. The nitrogen contribution is taken into account by introducing an additional sN orbital into the tight-binding basis. Biaxial strain effects on the band alignment of bulk Ga(NAsP) is studied for the ul...

Selected results obtained in the framework of MBE grown nanostructure for photonics on silicon are repsented in this paper. We present first a comprehensive study of GaAsPN/GaPN quantum wells (QWs) grown onto GaP substrates, in the light of a comparison with their N-free GaAsP/GaP QWs counterpart system. High density of small InGaAs/GaP Quantum Dot...

Dilute nitride GaNAsP for photonic applications on silicon

We report on the achievement of high density (In,Ga)As self-assembled quantum dots on GaP substrate with a good homogeneity. Good structural and electronic properties have been achieved, as revealed by room temperature photoluminescence measurements and by comparison to both InAs/GaAs and InAs/InP materials reference systems. This is supported by a...

This letter deals with the electroluminescence emission at room temperature of two light-emitting diodes on GaP substrate, based on ternary GaAsP/GaP and quaternary GaAsPN/GaPN multiple quantum wells. In agreement with tight-binding calculations, an indirect band gap is demonstrated from the temperature-dependent photoluminescence for the first str...

We report efficient carrier injection in GaAsPN/GaPN quantum wells grown on Si. Electroluminescence of GaAsPN/GaPN and GaAsP/GaP quantum wells is first presented. Nitrogen is found to induce large bandgap bowing in the bandstructure as well as spectacular enhancement of radiative quantum efficiency. Tight-binding bandstructure calculations are then...

Ultrafast relaxation dynamics of photogenerated carriers in nanostructure based saturable absorber (SA) are investigated using a degenerate cross-polarized pump–probe experiment at 1.55 µm operating wavelength. Single-walled carbon nanotubes (SWNT) encased in micelles are studied and compared to bundled ones as well as to iron doped InGaAs/InP mult...

Nous proposons ici l'étude des propriétés dynamiques de la polarisation d'un VCSEL (Laser vertical à émission par la surface) à fils quantiques (FQs) InAs/InP, émettant à 1,6 µm. La stabilité de la polarisation en régime dynamique est analysée et comparée à celle des VCSELs à base de puits quantiques (PQs). Tandis qu'on observe de fortes fluctuatio...

We have measured the carrier recombination dynamics in InGaN/GaN multiple quantum wells over an unprecedented range in intensity and time by means of time-resolved photoluminescence spectroscopy. We find that, at times shorter than 30 ns, they follow an exponential form and a power law at times longer than 1mus . To explain these biphasic dynamics,...

Les performances dynamiques des lasers à émission verticale (VCSELs) émettant aux longueurs d'ondes des télécommunications optiques (1.55 µm), et constitués de puits quantiques (PQs) ou de fils quantiques (FQs) sont analysées et comparées. La polarisation optique des VCSELs à PQs apparaît très instable, et peu prédictible. A l'inverse, les VCSELs à...

Single-walled carbon nanotubes (SWNT) based saturable absorber (SA) are investigated by pump-probe experiments at 10GHz repetition rate within the telecom wavelength range 1.51-1.55µm. Results show that SWNT exhibit a great potential for high-bit-rate optical regeneration.

Polarization controlled quantum dashes (QDHs) VCSEL grown on InP are investigated. Using optimized growth conditions, QDHs are obtained, presenting a polarized photoluminescence at 1.55 µm at room temperature, following the [1-10] direction according to QDH length. VCSEL polarized output laser emission is demonstrated at room temperature. Output VC...

Subpicosecond optical transmission experiments are used to compare saturable absorber (SA) based on bundled single-walled carbon nanotubes (SWNT) and iron-doped InGaAs/InP epitaxial multiple quantum wells (MQW) at 1.55 μm telecom wavelength. The SA key parameters (contrast ratio, saturation fluence, and recovery time) relevant for high speed all op...

Time-resolved and temperature-dependent photoluminescence measurements on one-dimensional sexithiophene lattices reveal intrinsic branching of photoexcitations to two distinct species: self-trapped excitons and dark charge-transfer excitons (CTX; > 5% yield), with radii spanning 2-3 sites. The significant CTX yield results from the strong charge-tr...

We report on the controlled transfer of very low electron densities in a single GaAs quantum well from electron hole pairs photoexcited in neighboring narrow quantum wells. Single particle excitation Raman scattering line shapes are in perfect agreement with the Lindhard dielectric function for electron densities well below 1010 cm-2, a density whe...

The dynamics of excitons in a GaAs quantum well in the presence of an electron gas is investigated by time resolved photoluminescence (PL). We prove that the emission at the exciton energy originates from a real exciton population for all time delays. Moreover we show that injecting a low density electron gas strongly accelerates the exciton dynami...

We have studied the relaxation of polaritons in a microcavity containing an electron gas of tunable density. The electron density, which has been directly measured, can be varied between 0 and 10^11 cm-2, independently of the polariton density. We were thus able to study a new relaxation mechanism: relaxation by polariton-electron collisions, which...

The dynamics of microcavity polaritons in the presence of an electron gas is experimentally studied through time-resolved photoluminescence under nonresonant excitation. Electrons are shown to accelerate the emission dynamics of the whole system, both in the polariton trap close to the center of the Brillouin zone (k=0) and in the reservoir of larg...

We report on the experimental study of polariton relaxation in the presence of a photo-injected electron gas. The occupation factor along the polariton branches is probed through angle resolved photoluminescence. The electron gas is shown to induce a redistribution of the population along the lower polariton branch with a strong population increase...

We report on the experimental study of polariton relaxation in the presence of a photo-injected electron gas. The population along the polariton branches is measured for various excitation conditions through angle resolved photoluminescence. The electron gas is shown to induce a redistribution of the population along the lower polariton branch with...