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Overcoming the difficulty in reproducibility and deterministically defining the metal phase of metal-Si heterostructures is among the key prerequisites to enable next-generation nanoelectronic devices. Here, the formation of monolithic Al-Si-Al heterostructures obtained from Si nanowires and Al contacts is presented. Transmission electron microscop...
Supporting Information of the paper "Reconfigurable Complementary and Combinational Logic Based on Monolithic and Single‐Crystalline Al‐Si Heterostructures".
Metal-semiconductor heterostructures providing geometrically reproducible and abrupt Schottky nanojunctions are highly anticipated for the realization of emerging electronic technologies. This specifically holds for reconfigurable field-effect transistors, capable of dynamically altering the operation mode between n- or p-type even during run-time....
Metal-semiconductor nanojunctions providing geometrically reproducible and abrupt Schottky junctions are highly anticipated for the realization of several emerging electronic technologies. This specifically holds for reconfigurable field-effect transistors (RFET) that are capable of dynamically altering the operation mode between n- or p-type even...