Mariko Suzuki

• PhD
• Investigadora/PDI Beatriz Galindo at Universidad de Cádiz

This article has been rejected as stated by this retraction note: The corresponding author submitted the article without the approval or consent of the rest of the co-authors involved in the performed research work. The findings presented in the article are unreliable, either as a result of major error (e.g., miscalculation or experimental error),...

Progress in power electronic devices is currently accepted through the use of wide bandgap materials (WBG). Among them, diamond is the material with the most promising characteristics in terms of breakdown voltage, on-resistance, thermal conductance, or carrier mobility. However, it is also the one with the greatest difficulties in carrying out the...

Progress in power electronic devices is currently accepted through the use of wide bandgap materials (WBG). Among them, diamond is the material with the most promising characteristics in terms of breakdown voltage, on-resistance, thermal conductance, or carrier mobility. However, it is also the one with the greatest difficulties in carrying out the...

Total photoyield spectroscopy (TPYS) measurement is applied to boron (B)-doped polycrystalline diamond, which shows an extremely low cathode fall voltage (Vc) in glow discharge operation. The B-doped diamond film grown on a molybdenum (Mo) substrate shows Vc of about 43 V after hydrogenation with a small amount of hydrogen added to argon (Ar + 0.03...

In the growth of carbon nanotubes, the aggregation of catalytic fine particles therefor is a problem. In order to realize the growth of carbon nanotubes into a high density, the carbon nanotube growing process includes a first plasma treatment step of treating a surface having catalytic fine particles with a plasma species generated from a gas whic...

For the next generation power devices, we have developed several types of unique diamond power devices. By these device performances, we conclude that by using the unique properties of diamond in addition to the superior structural FOM (figure of merit) the diamond power devices have high potential for the power devices. We discuss the potential of...

A structure includes a conductive film (12) provided in an underlying layer (10); and a carbon nanotube bundle (20) including a plurality of carbon nanotubes each having one end connected to the conductive film (12), wherein, at other end side of the carbon nanotube bundle (20), at least carbon nanotubes allocated at outer side of the carbon nanotu...

We fabricate planarized carbon nanotube (CNT) via interconnects using chemical mechanical polishing (CMP). The selective growth of CNT bundles in via holes and the filling of spin-on-glass into the space among the CNTs are performed, followed by a CMP process. The via resistance is reduced by post-CMP treatment and post-annealing due to the improve...

We fabricate planarized carbon nanotube (CNT) via interconnects using chemical mechanical polishing (CMP). The selective growth of CNT bundles in via holes and the filling of spin-on-glass into the space among the CNTs are performed, followed by a CMP process. The via resistance is reduced by post-CMP treatment and post-annealing due to the improve...

We explored the characteristic behavior of low-temperature graphene growth on catalytic metal films. The results suggested that graphene growth originates from the crystalline facets with specific angles with respect to the crystalline orientation of the catalytic metals at low temperatures, which is different from the conventional growth models. T...

We report on the electrical properties of carbon nanotube (CNT) via interconnects with improvement in contact formations between the CNT via and metal electrodes. For the improvement of the bottom contact formation, a TiN/TaN multilayer on a Cu bottom wiring layer is applied to suppress formation of a highly resistive oxide layer on the TaN barrier...

We report on the electrical properties of carbon nanotube (CNT) via interconnects with improvement in contact formations between the CNT via and metal electrodes. For the improvement of the bottom contact formation, a TiN/TaN multilayer on a Cu bottom wiring layer is applied to suppress formation of a highly resistive oxide layer on the TaN barrier...

n-Type diamond formation is one of the most important issues for the electronic application of diamond. Phosphorus is the best n-type dopant candidate at the moment. We have succeeded in growing high-quality phosphorus-doped diamond thin films on {111} diamond substrates. Although the ionization energy of the phosphorus donor is large (0.57 eV), th...

We report a synthesis of a closely packed multi-walled carbon nanotube (MWCNT) forest by a multi-step growth method, including a new approach to immobilize catalytic nanoparticles, using plasma-based chemical vapor deposition. The CNT packing density reaches one-half of the theoretical value, where the space of 30--40% is filled with MWCNTs. This v...

Temperature-dependent emission current–voltage measurements were carried out for nitrogen (N)-doped nanocrystalline diamond (NCD) films grown on n-type Si substrates by microwave plasma-assisted chemical vapor deposition (MP-CVD). Low threshold temperature (~ 260 °C) and low threshold electric field (~ 5 × 10− 5 V/µm) were observed. Both the temper...

Carbon nanotubes (CNTs) have been grown by surface-wave plasma-enhanced chemical vapor deposition (CVD) using size-classified Co nanoparticles at low temperatures. A mesh grid is used in the remote plasma-enhanced CVD system for the suppression of ion bombardment damage from plasma. The control of the electric field distribution using a mesh grid w...

We have succeeded in fabricating ultrafine carbon nanotube (CNT) via interconnects with SiOC interlayer dielectrics. High-quality multiwalled CNTs are grown in via holes with a diameter of 70 nm using pulse-excited remote plasma-enhanced chemical vapor deposition at 450degC. The resistance of a 70-nm-diameter CNT via is 52 Omega, which is the lowes...

IntroductionHigh Mobility n-Type DiamondElectrical Properties of n-Type Diamond – Schottky DiodeSummaryReferences

Multiwalled carbon nanotubes (CNTs) have been grown by remote plasma-enhanced chemical vapor deposition at temperatures as low as 400 °C. In via formation, the selective growth of CNT bundles in via holes at 430 °C and chemical mechanical polishing for planarization have been performed. The electrical evaluation of CNT single vias with various diam...

Carbon nanotube (CNT) growth at temperatures below 400 ℃ by pulse-excited remote plasma chemical vapor deposition was demonstrated. Reduction of plasma power was carried out in order to decrease the amount of all particles, ions, electrons, and radicals. In addition, a biased plate-type screening electrode was introduced to removal of charged parti...

B-doped polycrystalline diamond has been investigated as a cold-discharge cathode material for cold-cathode fluorescent lamps (CCFLs). The diamond film was synthesized by microwave plasma chemical vapor deposition (CVD) and basic cold-discharge characteristics were evaluated by open-cell measurement. The diamond showed a more than 35% smaller catho...

A cold cathode fluorescent lamp (CCFL) is a gas discharge light source widely used for liquid crystal display (LCD) backlighting. We proposed applying diamond as a new cathode material to reduce the power consumption of the CCFL. In this work, we show stable and low (less than 50% of metal) cathode-fall voltage for a glass discharge tube.

Electrical characteristics of n-type diamond Schottky diodes and metal/diamond interfaces have been systematically investigated for phosphorus (P)-doped homoepitaxial diamond layers. The current–voltage (I–V) characteristics of the Ni/n-type diamond Schottky diode show excellent rectification properties from 297 K to 773 K. The ideality factor and...

Generation and recombination processes of electrons through phosphorus (P) donor are analyzed by admittance spectroscopy for a Ni/Au Schottky contact on an n-diamond epilayer. The dependence of capacitance and conductance frequency on temperature is interpreted by Shockley–Read–Hall statistics. The thermal ionization energy and capture cross-sectio...

Capture and emission processes of electron at phosphorus (P) donor in a n-diamond epilayer are analyzed by admittance spectroscopy. Dependence of temperatures on capacitance and conductance-frequency curves is well explained by Shockley-Read-Hall statistics. Thermal ionization energy and capture cross section of P donor are evaluated to be 0.54±0.0...

Electrical properties of phosphorus (P)-related donors have been investigated for P-doped homoepitaxial diamond layers grown by microwave plasma CVD. Temperature-dependent current–voltage (I–V), capacitance–voltage (C–V) measurements and frequency-dependent C–V measurements have been carried out with lateral dot-and-plane (with ring-shaped gap) Sch...

Temperature-dependent current–voltage (I–V), capacitance–voltage (C–V) measurements, and frequency-dependent C–V measurements have been carried out to investigate electrical properties of phosphorus (P)-doped n-type homoepitaxial diamond layers. We have fabricated lateral dot-and-plane (with ring-shaped-gap) Schottky barrier diodes. Frequency-depen...

Electrical properties of B-related acceptor associated with B doping have been studied by current–voltage (I–V) measurements, frequency-dependent capacitance–voltage (C–V) measurements, Hall effect measurements and secondary ion mass spectroscopy measurements in B-doped homoepitaxial diamond layers grown by microwave plasma CVD. Lateral dot-and-pla...

The analysis of the perpendicular far field patterns of nitride-based laser diodes with various types of AlGaN cladding layers is demonstrated. Other results obtained with our nitride-based laser diodes are also demonstrated and discussed

The characteristics of Mg-doped GaN and AlGaN grown by H2-ambient and N2-ambient metalorganic chemical vapor deposition are compared and discussed. While as-grown Mg-doped GaN and AlGaN grown under H2-ambient show high resistivity, p-type GaN and AlGaN with high acceptor concentration were obtained by N2-ambient growth without any post-treatment. T...

Doping characteristics and electrical properties have been studied for Mg-doped AlxGa1−xN grown by atmospheric pressure MOCVD, using Cp2Mg. The net acceptor concentration increased with increasing [Cp2Mg]/[III] and saturated at about 7×1018 cm−3 for x=0.15, while the Mg concentration did not saturate up to 5×1019 cm−3. Both of them were rather smal...

We have clarified the effect of H2 and NH3 on the passivation of Mg acceptor in p-type GaN films grown by metalorganic chemical vapor deposition. It has been found that the small amount of H2 carrier gas strongly influences the electrical property of the Mg-doped GaN films. Low-resistivity p-type GaN has been obtained by H2-free growth without any...

Dry etching and overgrowth process techniques have been developed for the fabrication of InGaN inner stripe laser diodes. The dry etch damage at the etched surface and the overgrown interface was estimated using X-ray photoelectron spectroscopy (XPS) and Rutherford backscattering spectrometry (RBS). As a result, the etch damage at the overgrown int...

We demonstrate room temperature pulsed operation of nitride based multi-quantum-well (MQW) laser diodes with cleaved mirror facets grown on a conventional C-face sapphire substrate. Cleavage was performed along the (1120) direction of the sapphire substrate, and the resultant facet was analyzed using an atomic force microscope (AFM) and theoretical...

High-concentration, low-resistivity p-type Zn-doped InAlP alloy layers were achieved using metalorganic chemical vapor deposition (MOCVD) and off-axis substrates. The highest net acceptor concentration (N A-N D=1.3×1018 cm-3), obtained using an off-axis substrate, is one order of magnitude higher than the previously reported maximum value. Substrat...

Effects of substrate misorientation on deep levels and on oxygen incorporation have been investigated in undoped In0.5(Ga1−xAlx)0.5P(x = 0.0−1.0) grown be metalorganic chemical vapor deposition (MOCVD). Deep-level transient spectroscopy (DLTS) measurements have revealed three deep levels (EDLTS = 0.42 eV, 0.64 eV and ≈ 1.0 eV). The concentrations o...

Oxygen incorporation into In0.5(Ga1-xAlx)0.5P grown by metalorganic chemical vapor deposition has been quantitatively investigated as a function of growth parameters. The oxygen concentration (NO) increased with increasing Al composition (x). Marked decreases in NO for x{=}0.7 and 1.0 were observed as the V/III ratio (molar flow rate ratio of group...

The effects of residual impurities, such as hydrogen and oxygen, on Zn electrical activity have been studied for Zn-doped In0.5(Ga1−xAlx)0.5P grown by low-pressure metalorganic chemical vapor deposition. Zn electrical activity with a p-type cap l ayer grown on Zn-doped InGaAlP was found to be quite low and a high concentration of hydrogen was detec...

Donor-related shallow and deep states in Si-doped In0.5(Ga1−xAlx)0.5P (x = 0.0–1.0), grown by MOCVD, have been systematically investigated. DLTS measurements have revealed deep levels, with a constant thermal emission energy value (EDLTS = 0.42 eV), for x0.3. The concentration of these levels increased linearly with net donor concentration and reac...

Effects of substrate misorientation on Zn and Si doping characteristics and band gap energy have been investigated for InGaAlP grown by low-pressure metalorganic chemical vapor deposition. The Zn concentration and the net acceptor concentration for In0.5(Ga0.3Al0.7)0.5P monotonically increased with increasing tilt angle, using (100) substrates tilt...

Ethyldimethylindium (EDMI) has been investigated as a new metalorganic In source for the MOCVD growth of InGaAlP, and it was compared with trimethylindium (TMI). Good compositional control for InGaAlP was possible using EDMI. The indium incorporation efficiency from EDMI is higher than that from TMI. Undoped InGaP and InAlP layers grown using EDMI...

C3H6 was reacted over metallic K0.3MoO3 and insulating K0.33MoO3 to see if there is a correlation between the selectivity of the chemical reaction and the conductivity of the catalyst. In contrast to NaxWO3, there seems to be no correlation between the two. The disappearance of the correlation was discussed based on the electronic property of K0.33...

Graphene has various superior properties over Cu such as high current tolerance, ballistic transport and high thermal conductivity, and therefore, is one of the most promising material for interconnect like carbon nantube (CNT). According to theoretical study[1], graphene shows lower resistivity compared with Cu in the form of ultrafine, less than...