Marcel Andree

• University of Wuppertal

This letter presents a 206.5–220.5-GHz fundamental differential Colpitts oscillator in a cascode topology implemented in a 130-nm SiGe HBT technology with f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> t </sub>/ f max of 350/450 GHz. Base inductors at the common-base (CB) stages are used to provide...

This work focuses on a systematic analysis of the potential as well as the limitations of modern SiGe HBT devices for broadband passive room-temperature detection in the lower THz range. Multiple necessary conditions need to be fulfilled to facilitate broadband passive imaging with a sufficiently low in-band NEP, which refer to various technology-d...

Terahertz (THz) light-field imaging offers a solution for material identification and imaging of opaque objects. This paper explores THz techniques, including coherence-based approaches and light-field methods, showcasing experimental setups and results.

This article presents a comprehensive analysis of the terahertz (THz) rectification process with modern high-speed silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) devices to enable low-power and close-to-optimum detector sensitivity in a near-THz fractional bandwidth. The influence of all major device internal parasitics on the det...

A highly integrated fundamentally operated direct-conversion quadrature (IQ) TX/RX chipset with a tunable carrier of 215–240 GHz for high-speed wireless communication is presented. The TX/RX front-ends are fabricated in the 0.13- $\mu \text{m}$ SiGe HBT technology and combined with wire-bonded chip-on-board (COB) packaging for high-speed baseband...

Flexible energy harvesting devices fabricated in scalable thin-film processes are crucial for wearable electronics and the Internet of Things. We present a flexible rectenna based on a one-dimensional junction metal–insulator–graphene diode, offering low-noise power detection at terahertz (THz) frequencies. The rectennas are fabricated on a flexibl...

Flexible energy harvesting devices fabricated in scalable thin-film processes are important components in the field of wearable electronics and the Internet of Things. We present a flexible rectenna based on a one-dimensional junction metal-insulator-graphene diode, which offers low-noise power detection at terahertz (THz) frequencies. The rectenna...

This paper discusses advances related to the integration of future mobile electronic THz systems. Without claiming to provide a comprehensive review of this surg- ing research area, the authors gathered research on selected topics that are expected to be of relevance for the future exploration of components for practical mobile THz imaging and sens...

In this work, a silicon lens-coupled dual-polarization on-chip ring antenna for THz direct detection in 0.13-μm SiGe HBT technology is presented. In particular, various circuit-antenna co-design aspects are addressed, including the detector frequency-dependent driving impedance and responsivity, and the necessity of accommodating multiple DC signal...