Lyly Nyl Ismail

Universiti Teknologi Mara (Pulau Pinang) · Faculty of Electrical Engineering

Moore's Law state that, the number of transistors in silicon chip will be doubled every 2 years. The size of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) will be scaled down. MOSFET is a semiconductor device that used for switching and amplifying. As the MOSFET shrunk down, there will be Short Channel Effect (SCE) occur which can affe...

This research investigates the insulation properties of poly methyl methacrylate with titanium dioxide (PMMA:TiO2) nanodielectric film to be used as insulation layer in high voltage (HV) applications. AC and DC breakdown test has been conducted to investigate the insulation properties of PMMA:TiO2 nanodielectric to be used as solid insulation in HV...

In this study, the characterization of porous Gallium Nitrate (PG) for potential Ultra-violet (UV) light emission was examined by simulation. The simulation was carried out using SILVACO TCAD tools to fabricate the PG. By using DevEdit, the structure was constructed, and the device simulation was carried out using ATLAS provided by the SILVACO TCAD...

This paper report on the fabrication of p-type organic field effects transistor (OFET) using low temperature spin coating deposition technique. The p-type OFETs were fabricated using poly (3-hexylthiophene-2,5-diyl) (P3HT) and poly (methyl methacrylate):titanium dioxide (PMMA:TiO2) nanocomposite material were used as semiconductor and the gate diel...

This paper proposes the modern approach using Particle Swarm Optimization (PSO) algorithm in determining the ideal value of Proportional Integral (PI) gain for current controller of Permanent Magnet Synchronous Motor (PMSM). Controlling the torque of PMSM and optimizing the PI-gain are the main objectives of this project. The PI controller is emplo...

This research work investigates the ferroelectric characteristic of nanostructured ZnO/MgO bilayer based MFIM capacitor. The low leakage current (10−8 A.cm−2) of nanostructured ZnO/MgO bilayer films were observed for all annealed bilayer films. Nanostructured ZnO/MgO bilayer film annealed at 475°C was then utilized as insulator (dielectric) layer i...

This paper investigates the effect of PVDF-TrFE layer to the electrical properties of MIS device. The MIS (Al/PMMA:TiO2/PVDF-TrFE/Si) structures were fabricated on n-type Si substrate. The results indicate that the properties of MIS improved drastically with PVDF-TrFE layer. I-V and C-V characteristics shows that the MIS has a fast operating voltag...

The use of high dielectric material for thin films capacitor has been known since the first ferroelectric materials were introduced. The capability to store large energy density would be the ideal criteria to pursue nanoscaled films capacitor applications. Nowadays, capacitor device becomes complex device rather than just focus at single function w...

This paper investigated the effect of dielectric thickness to the electrical properties metal-insulator-semiconductor (MIS) device. The MIS device were fabricated having PMMA:TiO2 and ZnO as dielectric and semiconductor layer, respectively. The PMMA:TiO2 nancomposite dielectric film were deposited at different deposition speed from 1000, 2000, 3000...

This paper investigates the electrical properties of metal-insulator-semiconductor (MIS) by varying the thickness of the semiconductor layer. The MIS device was fabricated using ZnO and PMMA: TiO2 nanocomposite as semiconductor and dielectric layer, respectively. Different thickness of ZnO films was obtained by varying the deposition speed from 500...

Magnesium oxide, MgO with nanometre dimension particles size (36 to 73 nm) was successfully deposited on cleaned glass substrate. The drying temperatures were varied from 100 to 300°C and the dielectrics behaviour was investigated. From the results, it was revealed that variation of nano-MgO films properties obtained by changing the drying temperat...

Metal-ferroelectric-insulator-semiconductor (MFIS) devices were successfully fabricated using poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) and poly (methyl methacrylate): titanium dioxide (PMMA:TiO2) nanocomposite as ferroelectric and insulator films, respectively on n-type silicon (n-Si) substrate. Both ferroelectric and insulator films...

Nanocomposite poly (methyl methacrylate) :titanium dioxide (PMMA :TiO2) film were deposited on glass substrate. The effect of annealing temperature, especially on electrical, dielectric and the morphological properties of the thin films were investigated by current-voltage (I-V) measurement, impedance spectroscopy, and FESEM. The annealing temperat...

The effect of MgO nano-filler loading to the dielectric layer properties of nano-Mgo films has been studied. By using FESEM, the particle size of nano-MgO dielectrics was found in nanometer dimension with the range of 42 to 92 nm. The addition of MgO nano-filler resulted in surface modification in which it lead to the changes in dielectrics propert...

Magnesium oxide thin films have been deposited on glass substrate using simple chemical solution technique. Film thickness was varied (171; 238, and 506nm) by controlling the deposition time. The electrical behaviour of MgO films showed leakage current density below 10(-7) A/cm(2) for voltage range from -10V to 10V. Resistivity value of the film wa...

Bilayer ZnO/MgO dielectrics for metal–insulator–metal (MIM) capacitor application were successfully deposited using simple chemical technique which is sol–gel spin coating method with different annealing temperatures. Important criteria in determining good dielectric layer have been investigated which include structural, electrical and dielectric p...

In this study, we investigated the effect of MgO nanofiller content to the dielectric layer properties of nano-MgO film. Nano-MgO film was successfully deposited with particle size in the range of 42 to 92 nm by simple chemical solution technique. The film produced shows some surface modification as the nanofiller content increased. With the nanofi...

This research work focuses on the synthesis and deposition of nanostructured ZnO/MgO using immersion method where the influence of deposition time had been investigated. The deposition time was varied by controlling the immersion time at 2, 4, 6 and 8 hrs respectively. Electrical properties obtained revealed that the resistivity values varied from...

We report on the influence of the low deposition temperature of ZnO as semiconductor layer on the electrical characteristics of metal-insulator-semiconductor (MIS) structures. The ZnO films were deposited by radio frequency (RF) magnetron sputtering with variation of temperature from 40°C, 60°C, 80°C, 100°C and 120°C. PMMA were used as insulator la...

We have successfully deposit the a-C and nitrogen doped a-C (a-C:N) using the custom-made Aerosol-assisted CVD (AACVD). Natural precursor, camphor oil (C10H16O) was selected as the carbon source. The electrical and optical properties were characterized by BUKOH KEIKI CEP2000 solar simulator system and Perkin Elmer LAMBDA 750 UV-vis-NIR spectroscope...

Magnesium oxide and bilayer ZnO/MgO dielectrics film were successfully deposited using spin coating technique. The effect of MgO layer thickness towards prepared dielectric films behaviour was determined by controlling the deposition time. The comparison of the MgO and ZnO/MgO dielectrics film properties shows that the bilayer ZnO/MgO with 238nm Mg...

In this paper we study the hysteresis in metal-insulator-semiconductor (MIS) devices fabricated with nanocomposite poly (methyl methacrylate): titanium dioxide (PMMA:TiO2) on n-tyse Si as dielectric and semiconductor layers, respectively. The capacitance-voltage (C-V) and current-voltage (I-V) characteristic of MIS were studied as a function of dif...

A thermally stable multilayered transparent conducting oxide utilizing nanocomposite ZnO:TiO2 antireflection thin film (arc-ZnO:TiO2) on an indium–tin oxide (ITO) substrate has been prepared by radio frequency-magnetron sputtering. The effects of post-deposition annealing on the morphological, structural, optical and electrical properties were inve...

Nano-magnesium oxide (Nano-MgO) had successfully deposited on glass substrate using sol-gel spin coating technique at different drying temperature (100, 200 and 300°C). The dielectric layer properties of deposited nano-MgO films were investigated in terms of its resistivity, leakage current density, relative permittivity, topology and morphology re...

The electrical characteristics of metal–insulator–semiconductor (MIS) capacitor employing nanocomposite poly(methyl methacrylate):titanium dioxide (PMMA:TiO2) as insulator and zinc oxide (ZnO) as the semiconductor were discussed. The capacitance of the MIS devices was found to be 0.42 and 0.29 nF at frequency of 1 kHz and 1MHz respectively. Meanwhi...

Nano-magnesium oxide, MgO film was successfully prepared at various annealing temperatures (400, 450, 500 and 550°C) by using sol-gel method. The behaviour of the MgO as a dielectric layer was investigated in term of its electrical behaviour, relative permittivity and structural properties. The leakage current density obtained was below 10-9 A/cm2...

This paper reported the effect of silane on the electrical properties of the nanocomposite poly(methyl methacrylate): titanium dioxide (PMMA:TiO2) films. Different types of silane were added directly into the nanocomposite PMMA:TiO2 solution. Electrical properties result shows that when different silane were use in the nanocomposite solution give d...

This paper report the effect of milling time on the structural properties of TiO2 nanopowder prepared from sol-gel milling process. The synthesized TiO2 nanopowders have been characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and Fourier transform infrared (FTIR). XRD result reveals that the TiO2 nanopowde...

This paper reports on the dielectric properties of multilayer PVDF-TrFE/PMMA:TiO2 thin film. Two samples were fabricated on ITO substrates; one with PVDF-TrFE only and another PMMA:TiO2 on PVDF-TrFE on (PVDF-TrFE/PMMA:TiO2). Both samples were produced by spin coating method. Dielectric properties were characterized using impedance spectroscopic. Di...

Multilayer ZnO/MgO was successfully deposited using sol-gel spin coating method at different MgO molar concentration. The electrical and dielectric properties of deposited multilayer films were investigated using two point probes I-V measurement and impedance spectroscopy respectively. The resistivity was calculated based on I-V curve obtained and...

In this study, PMMA/TiO2 nanocomposite thin films were prepared by using sonication spin coating technique. The PMMA and TiO2 solution were mixed together and sonicated for 1h to confirm the homogeneity of the sample. The thin films obtained were then measured using field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM)...

TiO2 nanopowder (0-20 w%) has been introduced in the PMMA matrix using the single step of sonication method to produce the PMMA/TiO2 nanocomposite films in the free standing form. The PMMA and TiO2 solution were mixed in the sonication bath. The effects on Tg, thermal degradation and also modulus of the PMMA/TiO2 nanocomposites films were investiga...

PMMA/TiO2 nanocomposite films in free standing form were prepared at different amount of TiO2 nanoparticles by using sonication method. The PMMA powder and TiO2 nanopowder were dissolved into the toluene solution and sonicated for 1 h to confirm the homogeneity of the mixture. The FESEM micrographs reveal that PMMA/TiO2 nanocomposite contain 4 wt%...

This study investigates the effect of varying loading percentage of MgO on the dielectric constant of Poly (vinylideneflouride)/Magnesium Oxide (PVDF/MgO) nanocomposite thin films. PVDF/MgO nanocomposite spin coated thin films were successfully fabricated and characterized. PVDF and nanocomposites solutions with loading percentage of MgO at 3, 5, 7...

This paper reports the behavior of poly (methyl methacrylate) (PMMA) as insulator films. The PMMA concentrations were from 0.3, 0.6, 0.9 to 1.2 g. The electrical and dielectric properties results showed that PMMA concentration influenced the insulator behavior in the capacitor. The resistivity increased and the leakage current reduced from 10-2 A/c...

This work present the synthesis of ZnO/MgO multilayer films using spin coating technique with different MgO layer thickness which are 171nm, 238nm and 506nm. The influence of MgO thickness on the insulating layer properties was investigated. The best prepared insulating layer to be used as dielectrics was found to be ZnO/MgO film deposited using 23...

A poly(methyl methacrylate)-doped titanium dioxide (PMMA:TiO2) nanocomposite film was obtained by spin coating the nanocomposite solution onto a silicon substrate. The nanocomposite solutions were prepared by dissolving the PMMA and TiO2 nanopowder in three different types of organic solvent, namely, toluene, tetrahydrofuran (THF), and acetone. We...

This research is to investigate the dielectric properties of PMMA: TiO2 nanocomposite thin films. The experiments are conducted by varying the TiO2 concentration from 0wt%, 1wt%, 2wt%, 3wt%. The results indicate that dielectric properties of PMMA: TiO2 nanocomposite thin film is affected by the amount of TiO2 concentration added into PMMA solution....

The morphology of PVDF-TrFE (70/30) thin film at various annealing temperature were investigated using non-contact mode Atomic Force Microscopy (AFM). Differential Scanning Calorimetry (DSC) technique was used to obtain TC, Tm, and TCrys of PVDF-TrFE. The prepared spin coated PVDF-TrFE (70/30) thin films were annealed at TC (113°C), Tm (154°C), TCr...

The electrical, dielectric and structural properties of multilayer ZnO/MgO films prepared by simple chemical deposition technique were investigated using I-V measurement, impedance spectroscopy analyzer and field emission scanning electron microscope (FESEM). From the observation, it shows that the annealing temperature influence the electrical, di...

A poly(methyl methacrylate)-doped titanium dioxide (PMMA:TiO2) nanocomposite film was obtained by spin coating the nanocomposite solution onto a silicon substrate. The nanocomposite solutions were prepared by dissolving the PMMA and TiO2 nanopowder in three different types of organic solvent, namely, toluene, tetrahydrofuran (THF), and acetone. We...

High density of carbon nanotubes (CNTs) has been synthesized from agricultural hydrocarbon: camphor oil using a one-hour synthesis time and a titanium dioxide sol gel catalyst. The pyrolysis temperature is studied in the range of 700–900 ° C at increments of 50 ° C. The synthesis process is done using a custom-made two-stage catalytic chemical vapo...

PMMA thin films were deposited by sol gel spin coating method on ITO substrates. Toluene was used as the solvent to dissolve the PMMA powder. The PMMA concentration was varied from 30 ~ 120 mg. The dielectric properties were measured at frequency of 0 ~ 100 kHz. The dielectric permittivity was in the range of 7.3 to 7.5 which decreased as the PMMA...

High dielectric constant, low porosity and nano-dimension particle of single layer magnesium oxide, MgO and multilayer ZnO/MgO were synthesized at different MgO solution molar concentration by the simple chemical solution technique. The MgO molar concentration was found to alter the properties of both single and multilayer films. Observation reveal...

This paper presents the results of structural properties of titanium dioxide (TiO2) in nanopowder form synthesized using sol gel milling method. In the milling process, the amount of milling or the ball-to-powder weight ratio were varies from 1 to 6 gram. The FESEM micrographs show that the roughness and aggregates of TiO2 nanopowder increases when...

Nano-MgO films were successfully prepared using sol-gel spin coating method and annealed at annealing temperature in a range of 400 - 500°C. It is proven that altering the annealing temperature produced a dense, non-porous and large grain size MgO film. It was also found that film annealed at higher temperature lead to the formation of flower-like...

Physical properties such as high melting point, low heat capacity and high bonding strength of magnesium oxide, MgO could be get give an advantage to MgO to be used as the dielectric layer. Besides that, MgO also has large band gap (7.8 eV) and high dielectric constant (9.8) could be potentially used as a buffer layer for ferroelectric material. In...

Nano-MgO thin films were grown on the cleaned glass substrate via sol-gel spin coating techniques using magnesium acetate tetrahydrate, ethanol and nitric acid. For the thin films deposition, the solutions were prepared at six different molar concentrations (0.1M, 0.2M, 0.4M, 0.6M, 0.8M and 1M). The thickness and roughness of nano-MgO films was fou...

Sol-gel spin coated PMMA:TiO2 nanocomposite thin films on glass substrates were studied by comparing two types of the sol-gel solutions. Two types of PMMA:TiO2 nanocomposite sol-gel solutions were prepared; one using Degusa (P25), and the other one is using self-prepared TiO2 powder. The self-prepared nanosized TiO2 powder is obtained by drying the...

Magnesium Oxide, MgO is inorganic material with wide band gap (7.8eV) and suitable to be used as dielectric layer. Due to its chemical and structural properties, MgO also can be used as template to prepare ferroelectric thin film [1-3]. In this work, MgO thin films with different molar concentration from 0.1M to 1M were prepared using sol-gel spin...

Nanocry stalline anatase Ti02 photoanode have been prepared by mixing the commercial titania powder P-25 with a titanium alkoxide sol. The paste was further sonicated as to improve the mixing condition. It was then deposited on ITO-coated glass substrate having 10Q/sq by means of doctor blade technique. Two monolayer photoanodes with sonicated and...

In this work, we report on the effects of drying temperature on the electrical and structural properties of MgO thin films. The MgO thin films have been prepared on glass substrates using sol-gel spin coating method. The thin films dried at four different temperatures were then subjected to electrical and structural characterizations using two poin...

Poly (methy-methacrylate) (PMMA) thin films were deposited by sol-gel spin coating method on glass substrates. PMMA powder was dissolved in 60ml Toluene with the concentration of the PMMA in the solution was varied from 30 ~ 120 mg. Besides the PMMA concentration, we also studied the effect of the thin films thickness on the electrical properties....

This research was conducted to study the effect of strain silicon on 90nm PMOS using graded silicon germanium (SiGe). By introducing graded silicon germanium layer under the gate oxide, the performance of conventional 90nm PMOS and 90nm PMOS with silicon germanium layer was compared. The analysis focused on Id-Vg, Id-Vd characteristic, and hole mob...