Lukas Wind

TU Wien | TU Wien · Institute of Solid State Electronics

In this work, bottom-up and top-down structured Al-Si-Al heterostructure devices are integrated in a three top-gate architecture enabling reconfigurable transistors. Therefore, VLS grown Si nanowires (NWs) and nanosheets structured from silicon-on-insulator substrates are used as starting material. Utilizing TEM and EDX, the Al-Si interface was ana...

Si1-xGex is a key material in modern complementary metal-oxide-semiconductor and bipolar devices. Importantly SiGe and Ge are promising materials to enable higher drive currents, reduced power consumption and enhanced switching speeds. However, despite considerable efforts in metal-silicide and-germanide compound material systems, reliability conce...

Reconfigurable field-effect transistors, capable of being dynamically programmed during run-time, overcome the static nature of conventional complementary metal-oxide semiconductors by reducing the transistor count and the circuit path delay. Thereby, SiGe and Ge are predicted to boost drive currents, switching speed and to reduce power consumption...

High-quality electrical contacts are of utmost importance for nanoscale devices as they have a large impact on their electrical performance, reliability and reproducibility. Furthermore, as the CMOS scaling is about to approach fundamental physical limits, new device concepts are needed to further increase the functionality of electronic systems....

SiGe is a key material in modern complementary metal-oxide-semiconductor and bipolar devices. However, despite considerable efforts in metal-silicide and -germanide compound material systems, reliability concerns have so far hindered the implementation of metal-SiGe junctions that are vital for diverse emerging “More than Moore” and quantum computi...

High-quality electrical contacts are of utmost importance for nanoscale Si devices as they have a large impact on their electrical performance, reliability and reproducibility. Furthermore, as the CMOS scaling is about to approach fundamental physical limits, new device concepts are needed to further increase the functionality of electronic systems...

Overcoming the difficulty in reproducibility and deterministically defining the metal phase of metal-Si heterostructures is among the key prerequisites to enable next-generation nanoelectronic devices. Here, the formation of monolithic Al-Si-Al heterostructures obtained from Si nanowires and Al contacts is presented. Transmission electron microscop...

Supporting Information of the paper "Reconfigurable Complementary and Combinational Logic Based on Monolithic and Single‐Crystalline Al‐Si Heterostructures".

Metal-semiconductor heterostructures providing geometrically reproducible and abrupt Schottky nanojunctions are highly anticipated for the realization of emerging electronic technologies. This specifically holds for reconfigurable field-effect transistors, capable of dynamically altering the operation mode between n- or p-type even during run-time....

Metal-semiconductor nanojunctions providing geometrically reproducible and abrupt Schottky junctions are highly anticipated for the realization of several emerging electronic technologies. This specifically holds for reconfigurable field-effect transistors (RFET) that are capable of dynamically altering the operation mode between n- or p-type even...

Supporting Information of our paper "Monolithic and Single-Crystalline Aluminum-Silicon Heterostructures".

Overcoming the difficulty in the precise definition of the metal phase of metal−Si heterostructures is among the key prerequisites to enable reproducible next-generation nanoelectronic, optoelectronic, and quantum devices. Here, we report on the formation of monolithic Al−Si heterostructures obtained from both bottom-up and top-down fabricated Si n...

High-quality electrical contacts are of utmost importance for nanoscale devices as they have a large impact on their electrical performance, reliability and reproducibility. Nanowires (NWs) are of particular interest to ultra-scaled transistors because of their enhanced suppression of short channel effects. Especially, a deterministic top-down NW p...

To establish high-bandwidth chip-to-chip interconnects in optoelectronic integrated circuits (OEICs), it requires high-performance photon emitters and signal receiving components. Regarding the photodetector fast device concepts like Schottky junction devices, large carrier mobility materials and shrinking the channel length will enable higher oper...

Since MOS scaling, metallic interconnect causes limitations of data rate and ultrahigh power dissipation. Compared with electrical interconnects, optical interconnects allow higher operation speed and lower power consumption for high-bandwidth-density chip-to-chip interconnects. However, for important components of optoelectronic integration circui...

The ability to stack nanosheet transistors is an important prerequisite for the realization of vertically monolithic 3D integrated circuits enabling higher integration densities of functions and novel circuit topologies that relax miniaturization constrains. In this respect, we present a wafer-scale platform embedding high-quality nanoscale polycry...

Supporting Information regarding our publication "Polycrystalline Ge Nanosheets Embedded in Metal-Semiconductor Heterostructures Enabling Wafer-Scale 3D Integration of Ge Nanodevices with Self-Aligned Al Contacts".

Supporting information regarding our paper "Monolithic Metal-Semiconductor-Metal Heterostructures Enabling Next-Generation Germanium Nanodevices".

Low-dimensional Ge is perceived as a promising building block for emerging optoelectronic devices. Here, we present a wafer-scale platform technology enabling monolithic Al-Ge-Al nanostructures fabricated by a thermally induced Al-Ge exchange reaction. Transmission electron microscopy confirmed the purity and crystallinity of the formed Al segments...