Konstantinos Rogdakis

Konstantinos Rogdakis
Hellenic Mediterranean University · Department of Electrical Engineering

PhD in Nanoelectronics

About

67
Publications
7,415
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948
Citations
Introduction
He has more than 15 years research experience in the academic sector working on nanoelectronics, spintronics and optoelectronics. He possesses extensive hands-on experience on emerging low dimensional electronic systems. He is currently a Researcher in the i-EMERGE Research Institute of the Hellenic Mediterranean University and the Team Leader of Innovative Printed Electronics working on 2D materials engineering in various printed devices concepts .
Additional affiliations
June 2018 - present
Hellenic Mediterranean University
Position
  • Researcher
March 2017 - June 2018
London Centre for Nanotechnology
London Centre for Nanotechnology
Position
  • Research Associate
July 2016 - February 2017
Foundation for Research and Technology Hellas
Position
  • Research Associate

Publications

Publications (67)
Article
Full-text available
Resistive switching (RS) memories are novel devices that have attracted significant attention recently in view of their potential integration in deep neural networks for intense big data processing within the explosive artificial intelligence era. While oxide- or silicon-based memristive devices have been thoroughly studied and analyzed, there are...
Article
The ever-increasing number of Internet of Thing devices requires the development of edge-computing platforms to address at low power consumption the associated demand for big data processing while minimizing cloud communication latency. Neuromorphic computation is a viable solution to avoid an unsustainable energy cost, however, achieving stable me...
Article
The complex ionic-electronic conduction in mixed halide perovskites enables their use beyond von Neumann architectures implemented in resistive switching memory devices. Although device fabrication based on perovskite compounds involves solution-processing at low temperatures, reducing further fabrication costs by eliminating expensive materials ca...
Article
Full-text available
Hybrid halide perovskites are attractive candidates for resistive switching memories in neuromorphic computing applications due to their mixed ionic-electronic conductivity. Moreover, their exceptional optoelectronic characteristics make them effective as semiconductors in photovoltaics, opening perspectives for self-powered memory elements. These...
Article
Full-text available
Polypropylene (PP) composites reinforced with hexagonal boron carbide (B 4 C) nanoparticles were constructed using a Material Extrusion (MEX) 3D printing method. The goal was to provide nanocomposites for MEX 3D printing with enhanced mechanical properties by exploiting the superior properties of the B 4 C additive. The fabricated 3D-printed specim...
Article
Full-text available
Deep neural networks have achieved considerable success over the past ten years in a variety of fields. However, current state-of-the-art artificial intelligence (AI) systems require large computing hardware infrastructure and high power consumption. To overcome these hurdles, it is required to adopt new strategies such as designing novel computati...
Article
Full-text available
A new technological approach is needed for the development of emerging electronic components and systems within the Internet of Things (IoT) era. New advancements and innovations are required in architectural design and hybrid systems heterogeneous integration to address the challenge of widespread IoT deployment, its power demands and sustainabili...
Article
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Layered two-dimensional (2D) transition-metal chalcogenides (TMCs) attract substantial interest across multiple disciplines due to their unique properties. In perovskite solar cells (PSCs), researchers have extensively explored the integration of 2D...
Article
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Crossbar circuits based on two terminal (2T) memristors typically require an additional unit such as a transistor for individual node selection. A memristive device with gate‐tunable synaptic functionalities will not only integrate selection functionality at the cell level but can also lead to enriched on‐demand learning schemes. Here, a three‐term...
Poster
Graphene is a two-dimensional carbon-based nanomaterial that displays exceptionally high electrical and thermal conductivity, enhanced tensile strength, as well as high flexibility, and transparency, making it a material suitable for electronics, energy devices, and biomedical applications. However, the intrinsic hydrophobicity of graphene has long...
Poster
Smart generators that convert untapped ambient energy into electrical power are an innovative approach toward developing wearable, self-powering technologies, such as sensors and IoT devices, that do not require batteries, and therefore reduce the inevitable battery waste. Clean energy can be generated through the spontaneous absorption and evapora...
Article
Full-text available
Effective passivation of defects is an important step toward achieving highly efficient and stable Perovskite Solar Cells (PSCs). In this work, we introduce the incorporation of two different octylammonium based spacer cations as 2D perovskite passivation layers, namely Octylammonium Bromide (OABr) and octylammonium iodide. PSCs with OABr as a 2D p...
Article
Full-text available
A facile, ultralow‐cost, and up‐scalable printable manufacturing process of flexible, multifunctional sensors that respond to more than one external stimulus could have a pivotal role in low‐cost wearables and portable systems for Industry 4.0. Herein, using a low capex, in‐house spray coating system, the fabrication of a low‐cost photodetector tha...
Article
Full-text available
In this work, we formulate water-based graphene oxide (GO) inks to fabricate moisture energy generators (MEGs) while a two-fold geometric tuning is proposed to encourage enhanced performance. Two GO-based structures with distinctly different thicknesses were prepared as the moisture absorbing layer: a GO-pellet (GOP) and a thinner GO-film (GOF). Th...
Article
Full-text available
We investigate experimentally the capacitive coupling between a two-electron singlet-triplet spin qubit and flying electrons propagating in quantum Hall edge channels. After calibration of the spin qubit detector, we assess its charge sensibility and demonstrate experimentally the detection of less than five flying electrons with average measuremen...
Article
Full-text available
Organic–Inorganic Halide Perovskites (OIHP) have attracted tremendous research interest due to their exceptional semiconducting properties in combination with their facile, solution-based manufacturing performed at low temperatures. Their device applications cover a wide range of domains, while amongst them, photovoltaics is one of the most promisi...
Article
Full-text available
Hybrid organic-inorganic perovskite solar cells (PSCs) are attractive printable, flexible, and cost-effective optoelectronic devices constituting an alternative technology to conventional Si-based ones. The incorporation of low-dimensional materials, such as two-dimensional (2D) materials, into the PSC structure is a promising route for interfacial...
Preprint
Full-text available
We investigate experimentally the capacitive coupling between a two-electron singlet-triplet spin qubit and flying electrons propagating in quantum Hall edge channels. After calibration of the spin qubit detector, we assess its charge sensibility and demonstrate experimentally the detection of less than five flying electrons with average measuremen...
Article
Full-text available
The peculiar ions and carriers heterogeneity observed in hybrid organic / inorganic materials is the source of their emergent cross-coupled light and electric field tuneable functions with potential utility in...
Article
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As a vital step towards the industrialization of perovskite solar cells, outdoor field tests of large-scale perovskite modules and panels represent a mandatory step to be accomplished. Here we demonstrate the manufacturing of large-area (0.5 m²) perovskite solar panels, each containing 40 modules whose interfaces are engineered with two-dimensional...
Article
The advantageous physical properties of bulk Silicon Carbide (SiC) in association with the anticipated enhancement of specific physical properties along one-dimensional (1D) nanostructures have inspired a series of studies focused to the nanowire (NW) fabrication and characterization as well as to their application in devices. SiC Νanowire Field Ef...
Article
Full-text available
The high‐power conversion efficiency of flexible perovskite photovoltaics (PPV) at low light environment and their low‐cost manufacturing processes, render PPV superior to conventional rigid photovoltaics targeting indoor applications. However, various parameters related to materials, architecture, processing, and indoor characterization need to be...
Article
Full-text available
Perovskite solar cells (PSCs) have proved their potential for delivering high power conversion efficiencies (PCE) alongside low fabrication cost and high versatility. The stability and the PCE of PSCs can readily be improved by implementing engineering approaches that entail the incorporation of two-dimensional (2D) materials across the device's la...
Article
Full-text available
Breakthrough discoveries in high-throughput formulation of abundant materials and advanced engineering approaches are both in utter need as prerequisites for developing novel large-scale energy conversion technologies required to address our...
Article
We report current-induced spin torques in epitaxial NiMnSb films on a commercially available epiready GaAs substrate. The NiMnSb was grown by cosputtering from three targets using optimized parameters. The films were processed into microscale bars to perform current-induced spin-torque measurements. Magnetic dynamics were excited by microwave curre...
Article
Full-text available
Correction for ‘Up-scalable emerging energy conversion technologies enabled by 2D materials: from miniature power harvesters towards grid-connected energy systems’ by Konstantinos Rogdakis et al. , Energy Environ. Sci. , 2021, DOI: 10.1039/d0ee04013d.
Preprint
Full-text available
We report current-induced spin torques in epitaxial NiMnSb films on a commercially available epi-ready GaAs substrate. The NiMnSb was grown by co-sputtering from three targets using optimised parameter. The films were processed into micro-scale bars to perform current-induced spin-torque measurements. Magnetic dynamics were excited by microwave cur...
Article
Full-text available
Perovskite solar cells (PSCs) are currently the leading thin-film photovoltaic technology owing to their high power conversion efficiency (PCE), as well as their low-cost and facile manufacturing process. Two-dimensional (2D) materials have been reported to improve both the PCE and the stability of the PSCs when incorporated across the device’s lay...
Article
Full-text available
Organometallic lead-halide solar cells exhibited immense potential over the past years and reached the transition point from lab to industry-scale fabrication. However, bridging this gap and establishing perovskites as a viable competitor to conventional Si-based photovoltaics, hinges on the success of cost-effective upscaling process. The key fact...
Article
We report on current-induced ferromagnetic resonance techniques to characterise spin-Hall effect at high temperatures. A microwave current was injected into a patterned CoFeB/Pt bi-layer grown on a glass substrate, simultaneously exerting spin-transfer torques through the spin-Hall effect and also causing Joule heating enabling the control of the d...
Preprint
We present measurements of ferromagnetic-resonance - driven spin pumping and inverse spin-Hall effect in NbN/Y3Fe5O12 (YIG) bilayers. A clear enhancement of the (effective) Gilbert damping constant of the thin-film YIG was observed due to the presence of the NbN spin sink. By varying the NbN thickness and employing spin-diffusion theory, we have es...
Article
We present measurements of ferromagnetic resonance driven spin pumping and inverse spin Hall effect in NbN/Y3Fe5O12 (YIG) bilayers. A clear enhancement of the (effective) Gilbert damping constant of the thin-film YIG was observed due to the presence of the NbN spin sink. By varying the NbN thickness and employing spin-diffusion theory, we have esti...
Article
Full-text available
Spin pumping has become an established method for generating voltages using magnetic dynamics. The standard detection method of spin pumping is based on open-circuit voltage measurement. In this study, we demonstrate that it is also possible to measure the associated electric current by using macroscopic closed circuitry. Using variable load resist...
Article
Full-text available
Spin pumping is an established method to generate spin currents through magnetic dynamics. The standard detection method of spin pumping is a voltage measurement across spin pumping devices where the inverse spin-Hall effect can convert spin currents into charge currents, or charge accumulation when the circuit is open. We here show that it is poss...
Preprint
Spin pumping is becoming an established method to generate voltages from magnetic dynamics. The standard detection method of spin pumping is based on open circuit voltage measurement across ferromagnetic (FM) and non-magnetic (NM) bi-layers, where the inverse spin-Hall effect (ISHE) can convert spin currents into electrical charge accumulation. In...
Article
Full-text available
We report a modulation of the in-plane magnetotransport in artificial manganite superlattice [(NdMnO3) n /(SrMnO3) n /(LaMnO3) n ] m by varying the layer thickness n while keeping the total thickness of the structure constant. Charge transport in these heterostructures is confined to the interfaces and occurs via variable range hopping. Upon increa...
Article
Complex oxide heterostructures present a promising avenue for the design of multifunctional properties which may find application in a variety of technological systems. In heterostructures composed of transition metal oxides the disruption introduced by an interface can affect the balance of the competing interactions among spins, charges and orbit...
Preprint
Heterostructured material systems devoid of ferroic components are presumed not to display ordering associated with ferroelectricity. In heterostructures composed of transition metal oxides, however, the disruption introduced by an interface can affect the balance of the competing interactions among electronic spins, charges and orbitals. This has...
Article
Full-text available
Heterostructured material systems devoid of ferroic components are presumed not to display ordering associated with ferroelectricity. In heterostructures composed of transition metal oxides, however, the disruption introduced by an interface can affect the balance of the competing interactions among electronic spins, charges and orbitals. This has...
Article
Full-text available
Back-gated field effect transistors (FETs) based on 3C-SiC nanowire (NW) were fabricated and the electrical characterization revealed devices with either ohmic or rectifying contacts leading to two different operation modes. The transistors with ohmic-like contacts manifest very weak gating effect and the device switching off is not achievable even...
Article
Full-text available
Back-gated field effect transistors (FETs) based on catalyst-free grown 3C-SiC nanowires (NWs) were fabricated and the electrical characterization revealed electron conduction through the NWs. Devices with either ohmic or rectifying contacts have been observed leading to two different operation modes. The transistors with ohmic-like contacts manife...
Article
Full-text available
Silicon microwires (MWs) previously synthesized using the VLS method with gold catalyst are being carburized at 1100 degrees C under methane aiming to their conversion to SiC. SEM, TEM as well as XPS and Raman spectroscopy were used for structural and morphological characterization. After carburization achievement, SiC is found to be polycrystallin...
Article
Full-text available
Back-gated field effect transistors (FETs) based on catalyst-free grown 3C-SiC nanowire (NW) were fabricated. Devices with rectifying Source (S) and Drain (D) contacts have been observed. In contrast with the ohmic-like devices reported in the literature, the Schottky contact barrier (SB) at S/ D regions acts beneficially for the FET performance by...
Article
Full-text available
SiC nanowires are of high interest since they combine the physical properties of SiC with those induced by their low dimensionality. For this reason, a large number of scientific studies have been dedicated to their fabrication and characterization as well as to their application in devices. SiC nanowires' growth involving different growth mechanis...
Article
Full-text available
Back-gated field effect transistors (FETs) based on catalyst-free grown 3C-SiC nanowires (NWs) were fabricated and electrical characterization is presented. Silvaco simulation was used to fit the I-V characteristics and to extract information about the carrier (electrons) concentration and the oxide/NW interface quality. The high trap density and f...
Article
We present numerical simulations of gate-all-around (GAA) 3C-SiC and Si nanowire (NW) field effect transistors (FETs) using a full quantum self-consistent Poisson-Schrödinger algorithm within the non-equilibrium Green's function (NEGF) formalism. A direct comparison between Si and 3C-SiC device performances sheds some light on the different transpo...
Article
Full-text available
In this work, SiC nanowire (NW) FETs are prepared and their electrical measurements are presented. From the samples fabricated on the same substrate, various I-Vs shapes are obtained (linear, non linear symmetric, and asymmetric). With the assistance of simulation, we show that this is a result of different values of Schottky Barrier Heights (SBH)...
Article
We report on the electrical characteristics and the effects of source/drain Schottky barrier heights (SBHs) in a lightly implanted silicon nanowire field-effect transistor (SiNW FET). We prepared the SiNW FETs by boron implantation with a dose of 1×1012 ions/cm2 and an energy of 10 keV. Our results indicated that the nature of the metal-contacts on...
Article
Numerical simulations of gate-all-around (GAA) 3C-SiC nanowire (NW) field effect transistors (FETs) are presented using a full quantum self-consistent Poisson-Schrodinger algorithm within the non-equilibrium Green's function (NEGF) formalism. 3C-SiC device performance is benchmarked by a direct comparison with corresponding Si NWFETs. A full quantu...
Article
Full-text available
3C-SiC is a promising material for high power and high-speed electronic devices as well as in sensors operating at high temperatures or hostile environments. For these reasons, we solved self-consistently the Poisson equation within the quantum Non Equilibrium Green Function Formalism (NEGF) in order to model and compare 3C-SiC and Si nanowire (NW)...
Article
Full-text available
Experimental and simulated I-V characteristics of silicon carbide (SiC) nanowire-based field-effect transistors (NWFETs) are presented. SiC NWs were fabricated by using the vapor-liquid-solid mechanism in a chemical vapor deposition system. The diameter of fabricated SiC NWs varied from 60 up to 100 nm while they were some micrometers long. Their I...
Article
We have successfully demonstrated p-type silicon nanowire field-effect transistors (Si NW p-FETs) prepared using B-ion implantation with a dose of 1 × 1013 ions/cm2 and an energy of 10 keV. The experimental ID−VDS characteristics for B-implanted Si NW FETs revealed a clear p-channel FET behavior with a hole mobility of 6.9 cm2/(V·s), a hole concent...
Article
Full-text available
Silicon carbide (SiC) nanowires (NWs) could combine the properties of one-dimensional (1D) structures with those of a wide band gap semiconductor. For this reason, we solved self-consistently the Poisson equation with both the quantum Non-Equilibrium Green Function Formalism (NEGF) and the classical drift–diffusion model in order to model and compa...
Article
Recently, the growth and characterization of one-dimensional (1D) nanostructures (nanowires, nanorods, nanotubes) of wide-band-gap semiconductors have been extensively studied due to their potential for applications in nanoelectronics, sensors, batteries, and field emission displays (FEDs). The nanowire (NW) approach allows for a coaxial gate-diele...

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