Kiryl A. Niherysh

Kiryl A. Niherysh
University of Latvia | LU · Institute of Chemical Physics

Master of Science

About

6
Publications
405
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20
Citations

Publications

Publications (6)
Article
In this work, simple and cost‐effective phyiscal vapor deposition method is applied for deposition of single Bi2Se3, Bi1.925Sn0.075Se3, Bi2Se2.975Te0.025 ultrathin films of average thickness 10–12 nm, and for the fabrication of n‐type 5‐layer nanolaminates. The nanolaminates are composed from alternating doped and undoped ultrathin films. Electrica...
Article
Full-text available
The majority of proposed exotic applications employing 3D topological insulators require high-quality materials with reduced dimensions. Catalyst-free, PVD-grown Bi2Se3 nanoribbons are particularly promising for these applications due to the extraordinarily high mobility of their surface Dirac states, and low bulk carrier densities. However, these...
Article
Full-text available
In this work, the Raman spectroscopy mapping technique is used for the analysis of mechanical strain in Bi2Se3thin films of various (3-400 nm) thicknesses synthesized by physical vapour deposition on amorphous quartz and single-layer graphene substrates. The evaluation of strain effects is based on the correlation analysis of in-plane (E2g) and out...
Article
In this work simple cost-effective physical vapor deposition method for obtaining high-quality Bi2Se3 and Sb2Te3 ultrathin films with thicknesses down to 5 nm on mica, fused quartz and monolayer graphene substrates is reported. Physical vapor deposition of continuous Sb2Te3 ultrathin films with thicknesses 10 nm and below is demonstrated for the fi...
Article
Full-text available
Raman spectroscopy was used to study the structure of graphene synthesized from methane by chemical vapor deposition at atmospheric pressure and transferred to a SiO 2 /Si substrate using various transfer and polymer-removal methods. It was found that the dependences of the 2D peak positions on the G peak positions of the studied samples were well-...

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