Kirandeep Singh

Kirandeep Singh
CSIR - National Chemical Laboratory, Pune | NCL · Physical and Materials Chemistry Division (NCL)

Doctor of Philosophy

About

31
Publications
7,181
Reads
How we measure 'reads'
A 'read' is counted each time someone views a publication summary (such as the title, abstract, and list of authors), clicks on a figure, or views or downloads the full-text. Learn more
332
Citations
Additional affiliations
January 2013 - February 2017
Indian Institute of Technology Roorkee
Position
  • Researcher

Publications

Publications (31)
Article
We have prepared two new silylene-phosphine-based hybrid ligands Si{N(R)C6H4(PPh2)}{PhC(NtBu)2} [R = TMS {trimethylsilyl} (1) and TBDMS {tert-butyldimethylsilyl} (2)], which possess two donor sites. Furthermore, the treatment of the bidentate ligand 1 with base metal halides {FeBr2, CoBr2, NiCl2·dme [nickel chloride(II) ethylene glycol dimethyl eth...
Article
Coordination flexibility assisted porosity has been introduced into an Iron-isonicotinate metal organic framework (MOF), (Fe(4-PyC) 2 .(OH). The framework showed CO 2 -specific gate opening behavior, which gets tuned as a function of temperature and pressure. The MOF's physisorptive porosity towards CO 2 , CH 4 , and N 2 was investigated; it adsorb...
Article
Full-text available
2D van der Waals magnetic semiconductors have emerged along with the possibilities of achieving an efficient gate tunability and a proximity effect with a high magnetic anisotropy compared with 3D counterparts. Little explored are multiple magnetic phases with a single crystallographic phase. Herein, the multiple magnetic phases in a Mn‐doped SnS2...
Article
Full-text available
We report the strong ferromagnetic order in van der Waals (vdW) layered SnS2 induced by cobalt substitution. The single-crystal Co-doped SnS2 grown by a self-flux method reveals a relatively high Curie temperature (TC) of ∼131 K with an in-plane magnetic easy axis and a large saturation magnetization of ∼0.65 emu g⁻¹ for the 2 at. % Co concentratio...
Article
Full-text available
Diluted magnetic semiconductors including Mn‐doped GaAs are attractive for gate‐controlled spintronics but Curie transition at room temperature with long‐range ferromagnetic order is still debatable to date. Here, the room‐temperature ferromagnetic domains with long‐range order in semiconducting V‐doped WSe2 monolayer synthesized by chemical vapor...
Article
Full-text available
Here we show fabrication of artificial multiferroic heterostructure by sputter deposited ferromagnetic Ni0.5Mn0.35In0.15 (Ni-Mn-In) layer followed by ferroelectric Pb0.96La0.04(Zr0.52Ti0.48)O3 (PLZT) layer on silicon substrate. Room temperature X-ray diffraction of the heterostructures revealed a polycrystalline austenitic L21 phase formed at the b...
Article
Full-text available
The current study explores the presence of strong magnetoelectric (ME) coupling in a sputtered deposited NiMnIn/aluminum nitride (AlN) heterostructure on an Si substrate. The X-ray diffraction, scanning electron microscopy, and X-ray photoelectron spectroscopy results confirm the formation of a pure AlN wurtzite phase in the ME heterostructure. The...
Article
The present study reports the effect of bottom electrodes (Al, Pt & Ti) on the texture, piezoelectric characteristics, dielectric properties and leakage current behavior of reactive DC magnetron sputtered AlN thin films. X-ray diffraction results revealed that the lattice structure and texture of bottom electrode plays a vital role in c-axis wurtzi...
Preprint
Full-text available
Diluted magnetic semiconductors including Mn-doped GaAs are attractive for gate-controlled spintronics but Curie transition at room-temperature with long-range ferromagnetic order is still debatable to date. Here, we report the room-temperature ferromagnetism with a long-range order in semiconducting V-doped WSe2 monolayer synthesized by chemical v...
Article
The present study represents a systematic temperature dependent charge transport and dielectric properties of nanocrystalline silicon carbide nitride (nc-SiCN) thin films grown on Pt/Ti/SiO2/Si substrate. A large negative temperature coefficient of resistance (TCR) ranging from 6200 to 2300 ppmK⁻¹ in the temperature range 300-773 K, suggests that t...
Chapter
Full-text available
The current study explored the investigation of direct strain and charge co-mediated Magnetoelectric (ME) coupling in magnetron sputtered ultra thin PZT /Ni-Mn-In (80 nm/30 nm) multiferroic heterostructure. The evidence of interfacial charges responsible for interaction between FE and FM layers at low thickness regime was manifested from abnormalit...
Article
Full-text available
This study illustrates the approach to obtain four logic states of ferromagnetic shape memory alloy based multiferroic tunnel junction (MFTJ). In order to achieve giant tunneling electroresistance (TER) and tunneling magnetoresistance (TMR), Ni-Mn-In and Ni-Mn-Sb layers were chosen as electrodes, as well as the concept of the composite barrier was...
Article
The current study reports the strong magnetoelectric coupling (M–E) in silicon (Si)-integrated ferromagnetic shape memory alloy-based PZT/Ni–Mn–In thin-film multiferroic heterostructure. The strain-mediated nature of converse M–E coupling is reflected from the butterfly-shaped normalized magnetization (M/M s) versus electric field plots. The direct...
Article
Full-text available
The present study reports silicon carbide nitride (SiCN) as a new material for resistive switching-based nonvolatile memory device applications. The Cu/SiCN/Pt device exhibit uniform and stable bipolar resistive switching behavior. A thorough current-voltage (I-V) analysis suggests an Ohmic conduction mechanism within the low resistance state (LRS)...
Article
Full-text available
The current study delivers the first assessment of well-separated cone shaped n-type epitaxial BiFe0.9Mn0.1O3 (n-BFMO) shells integrated on LaNiO3 (LNO) buffered vertical arrays of p-type nanoporous Si nanowire cores as an absorber for high efficiency and sustainable all- oxide photovoltaic devices. The photovoltaic effect of the LNO/n-BFMO/Au radi...
Article
Full-text available
The manipulation of magnetic states and materials’ spin degree-of-freedom via a control of an electric (E-) field has been recently pursued to develop magnetoelectric (ME) couplingdriven electronic data storage devices with high read/write endurance, fast dynamic response, and low energy dissipation. One major hurdle for this approach is to develop...
Article
Full-text available
In this study, we have reported the influence of growth temperature on perovskite phase evolution in sputtered deposited high quality Pb1-x Lax (Zr0.9 Ti0.1 )O3 (PLZT) thin films on Pt/Ti/SiO2/Si substrate. PLZT thin films were fabricated at substrate temperature ranging from 400 to 700 oC. We have investigated the structural, dielectric, ferroelec...
Article
Full-text available
In this study, the bipolar resistive switching behavior of Pulsed Laser Deposited Zn1-xMgxO (x= 0, 0.1) thin films in Ag/Zn1-XMgxO/Cu structure has been investigated. The XRD pattern of Zn1-XMgxO exhibits the presence of (002) and (103) reflection. The cross sectional field emission scanning electron microscopy (FE-SEM) studies were further carrie...
Article
The current study explored the influence of Mn substitution on the electrical and magnetic properties of BiFeO3 (BFO) thin films synthesized using low cost chemical solution deposition technique. X-ray diffraction analysis revealed that pure rhombohedral phase of BiFeO3 was transformed to the tetragonal structure with P4mm symmetry on Mn substituti...
Conference Paper
Full-text available
Silicon integrated vertically aligned Ni-Mn-In nanorod arrays having ~100 nm length were investigated for shape memory behavior and magnetocaloric effect. The room temperature X-ray diffraction (XRD) patterns revealed the (220) oriented pure austenitic cubic phase growth of Ni–Mn–In nanorods. The systematic thermo-magnetic (M-T) plots, resistance v...
Article
Full-text available
The ferromagnetic shape memory driven alterations in strain mediated direct and converse magnetoelectric coupling (DME & CME) was realized in sputtered deposited PZT/Ni-Mn-In multiferroic hetero-junctions. The ferroelectric (P-E loops), dielectric (ε vs frequency, ε-E), and voltage modulated magnetic anisotropy measurements (M-E curves) were execut...
Conference Paper
Full-text available
The current study explored the investigation of direct strain and charge co-mediated Magnetoelectric (ME) coupling in magnetron sputtered ultra thin PZT/Ni-Mn-In (80nm/30 nm) multiferroic heterostructure. The evidence of interfacial charges responsible for interaction between FE and FM layers at low thickness regime was manifested from abnormalitie...
Article
Full-text available
Thickness modulated direct, local measurement of magnetoelectric (ME) coupling was executed in a high quality sputter deposited PZT/Ni-Mn-In bilayer system grown on Si(100) substrate. The additive temperature and magnetic-field-driven shape-memory behavior of bottom ferromagnetic (FM) Ni-Mn-In layer, which vanish at ultra-low regime (8 nm), induce...
Article
Thickness modulated direct, local measurement of magnetoelectric (ME) coupling was executed in a high quality sputter deposited PZT/Ni-Mn-In bilayer system grown on Si(1 0 0) substrate. The additive temperature and magnetic-field-driven shape-memory behavior of bottom ferromagnetic (FM) Ni-Mn-In layer, which vanish at ultra-low regime (8 nm), induc...
Article
Full-text available
High quality nanocrystalline silicon carbide (nc-SiC) thin films sputtered deposited on Pt/Ti/SiO 2 /Si substrate were investigated for its crystallinity dependent dielectric properties (ε r-f, ε rE) and J–E characteristics. The gain in intensity of highly oriented (105) X-ray reflection evident the improvement in crystallinity of nc-SiC thin films...
Article
Full-text available
In this study, the authors report on the structural and optical properties of vanadium pentoxide (V 2 O 5) nanocrystalline thin films at different substrate temperatures ranging from room temperature to 450°C on glass substrates using vacuum evaporation technique. The deposition temperature was found to have significant effect on the structural, mo...
Article
Full-text available
The strain mediated electrical and magnetic properties were investigated in PZT/Ni-Mn-In heterostructure deposited on Si (100) by dc/rf magnetron sputtering. X-ray diffraction pattern revealed that (220) orientation of Ni-Mn-In facilitate the (110) oriented tertragonal phase growth of PZT layer in PZT/Ni-Mn-In heterostructure. A distinctive peak in...
Article
The current study explores the dielectric and ferroelectric properties of pulsed laser deposited (Ba1-x ,Srx )TiO3 , Ba(Zrx,Ti1-x )O3 and [(Ba1-x,Srx ), (Zry,Ti1-y )] O3 thin films deposited on LaNiO3 bottom electrode. The crystallographic study of these films done using XRD reveals that these films were crystalline in nature having (110) preferred...
Article
Full-text available
Nd-doped BiFeO3 thin films were grown by pulsed laser deposition on quartz substrate and their structural, optical and magnetic properties have been studied. X-ray diffraction analysis revealed that Nd addition caused structural distortion even with 5% of Nd concentration, additional secondary phase appeared in all samples but its intensity was gre...

Network

Cited By