Kaushalya JhuriaLawrence Berkeley National Laboratory | LBL
Kaushalya Jhuria
PhD
About
25
Publications
3,791
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Introduction
Kaushalya is currently working as a postdoc at Lawrence Berkeley National Laboratory, USA. Kaushalya worked in the field of picosecond electric pulse driven ultrafast magnetization dynamics for Spintronic Applications (demonstrated picosecond spin orbit torque driven magnetization reversal using single digit THz e-field pulses).
Currently Kaushalya is working on Superconductivity and quantum information science related projects at Berkeley lab.
Additional affiliations
October 2018 - present
Education
July 2016 - July 2018
Publications
Publications (25)
Silicon-based quantum emitters are candidates for large-scale qubit integration due to their single-photon emission properties and potential for spin-photon interfaces with long spin coherence times. Here, we demonstrate local writing and erasing of selected light-emitting defects using femtosecond laser pulses in combination with hydrogen-based de...
Electrically controllable nonvolatile magnetic memories show great potential for the replacement of conventional semiconductor-based memory technologies. Here, we experimentally demonstrate ultrafast spin-orbit torque (SOT)-induced coherent magnetization switching dynamics in a ferromagnet. We use an ultrafast photoconducting switch and a coplanar...
Near-infrared color centers in silicon are emerging candidates for on-chip integrated quantum emitters, optical-access quantum memories, and sensing. We access ensemble G-color-center formation dynamics and radiation-induced atomic disorder in silicon for a series of megaelectronvolt proton-flux conditions. The photoluminescence results reveal that...
Silicon-based quantum emitters are candidates for large-scale qubit integration due to their single-photon emission properties and potential for spin-photon interfaces with long spin coherence times. Here, we demonstrate local writing and erasing of selected light-emitting defects using fs laser pulses in combination with hydrogen-based defect acti...
Silicon is the most scalable optoelectronic material but has suffered from its inability to generate directly and efficiently classical or quantum light on-chip. Scaling and integration are the most fundamental challenges facing quantum science and technology. We report an all-silicon quantum light source based on a single atomic emissive center em...
A common technique for color center creation in wideband gap semiconductors employs ion implantation and a subsequent thermal annealing. In general, this annealing process is conducted in an vacuum oven. Here, we exploit the annealing based on femtosecond laser pulses. For that purpose, we implant fluorine ions at 54 keV and chlorine ions at 74 keV...
Quantum light sources play a fundamental role in quantum technologies ranging from quantum networking to quantum sensing and computation. The development of these technologies requires scalable platforms, and the recent discovery of quantum light sources in silicon represents an exciting and promising prospect for scalability. The usual process for...
Near infrared color centers in silicon are emerging candidates for on-chip integrated quantum emit-ters, optical access quantum memories and sensing. We access ensemble G color center formation dynamics and radiation-induced atomic disorder in silicon for a series of MeV proton flux conditions. Photoluminescence results reveal that the G-centers ar...
Silicon is the most scalable optoelectronic material, and it has revolutionized our lives in many ways. The prospect of quantum optics in silicon is an exciting avenue because it has the potential to address the scaling and integration challenges, the most pressing questions facing quantum science and technology. We report the first all-silicon qua...
Quantum optics in silicon is promising. We report the first all-silicon quantum light source, with a single atomic center embedded in a nanophotonic cavity, resulting in enhanced light-matter interaction.
We demonstrate the first all-silicon quantum light source, by embedding a single silicon-based defect within a silicon nanophotonic cavity, resulting in a 30-fold enhancement of luminescence and an 8-fold acceleration of the emission.
Electrically controllable non-volatile magnetic memories show great potential for the replacement of semiconductor-based technologies. Recently there has been strong interest in spin-orbit torque (SOT) induced magnetization reversal due to the device's increased lifetime and speed of operation. However, recent SOT switching studies reveal an incuba...
The study of defect centers in silicon has been recently reinvigorated by their potential applications in optical quantum information processing. A number of silicon defect centers emit single photons in the telecommunication O-band, making them promising building blocks for quantum networks between computing nodes. The two-carbon G-center, self-in...
The study of defect centers in silicon has been recently reinvigorated by their potential applications in optical quantum information processing. A number of silicon defect centers emit single photons in the telecommunication $O$-band, making them promising building blocks for quantum networks between computing nodes. The two-carbon G-center, self-...
We offer a perspective on the prospects of ultrafast spintronics and opto-magnetism as a pathway to high-performance, energy-efficient, and non-volatile embedded memory in digital integrated circuit applications. Conventional spintronic devices, such as spin-transfer-torque magnetic-resistive random-access memory (STT-MRAM) and spin–orbit torque MR...
Reducing energy dissipation while increasing speed in computation and memory is a long-standing challenge for spintronics research. In the last 20 years, femtosecond lasers have emerged as a tool to control the magnetization in specific magnetic materials at the picosecond timescale. However, the use of ultrafast optics in integrated circuits and m...
The polycrystalline thin film solar cells often possess problem of grain boundaries which lower the efficiency of device, but several mechanisms/treatments are available to passivate these grain boundaries and enhance the performance of device concerned. In cadmium-based devices, the passivation could be undertaken by chloride activation where grai...
Effect of substrate rotation on the structural, magneto-optic and magneto-transport properties of DC magnetron
sputtered Co60Fe40 thin films is investigated. Two thin film samples (each of 20 nm thickness) were prepared by
rotating (S-WR) and without rotating (S-WOR) the substrate during deposition. X-ray diffraction (XRD) patterns
reveal that the...