
Jose Marquez-Prieto- PhD
- PostDoc Position at Helmholtz-Zentrum Berlin für Materialien und Energie
Jose Marquez-Prieto
- PhD
- PostDoc Position at Helmholtz-Zentrum Berlin für Materialien und Energie
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84
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Introduction
Current institution
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October 2016 - present
March 2013 - July 2016
Publications
Publications (84)
The selenization of metallic Cu-Zn-Sn-Ge precursors is a promising route for the fabrication of low-cost and efficient kesterite thin film solar cells. Nowadays, efficiencies of kesterite solar cells are still below 13 %. For Cu(In,Ga)Se2 solar cells, the formation of compositional gradients along the depth of the absorber layer has been demonstrat...
The performance of perovskite solar cells is predominantly limited by non-radiative recombination, either through trap-assisted recombination in the absorber layer or via minority carrier recombination at the perovskite/transport layer interfaces. Here, we use transient and absolute photoluminescence imaging to visualize all non-radiative recombina...
The structural phases and optoelectronic properties of coevaporated CsPbI3 thin films with a wide range of [CsI]/[PbI2] compositional ratios are investigated using high throughput experimentation and gradient samples. It is found that for CsI‐rich growth conditions, CsPbI3 can be synthesized directly at low temperature into the distorted perovskite...
The Shockley-Queisser (SQ) limit provides a convenient metric for predicting light-to-electricity conversion efficiency of a solar cell based on the band gap of the light-absorbing layer. In reality, few materials approach this radiative limit. We develop a formalism and a computational method to predict the maximum photovoltaic efficiency of imper...
The rapid rise of perovskite solar cells (PSCs) is increasingly limited by the available charge-selective contacts. This work introduces two new hole-selective contacts for p–i–n PSCs that outperform all typical p-contacts in versatility, scalability and PSC power-conversion efficiency (PCE). The molecules are based on carbazole bodies with phospho...
The next technological step in the exploration of metal‐halide perovskite solar cells is the demonstration of larger‐area device prototypes under outdoor operating conditions. The authors here demonstrate that when slot‐die coating the halide perovskite layers on large areas, ribbing effects may occur but can be prevented by adjusting the precursor...
Barium zirconium sulfide (BaZrS3) is an earth-abundant and environmentally friendly chalcogenide perovskite with promising properties for various energy conversion applications. Recently, sulfurization of oxide precursors has been suggested as a viable solution for effective synthesis, especially from the perspective of circumventing the difficulty...
Perovskite Solar Cells In article number 2202438, Cong Chen, Dewei Zhao, Fan Fu, and co‐workers report 15.1% flexible near‐infrared transparent wide‐bandgap (1.77 eV) perovskite solar cells with a low open‐circuit voltage–deficit of 480 mV. When paired with flexible, narrow‐bandgap (1.24 eV) perovskite solar cells, they demonstrate a 23.8% flexible...
Among various types of perovskite‐based tandem solar cells (TSCs), all‐perovskite TSCs are of particular attractiveness for building‐ and vehicle‐integrated photovoltaics, or space energy areas as they can be fabricated on flexible and lightweight substrates with a very high power‐to‐weight ratio. However, the efficiency of flexible all‐perovskite...
Barium zirconium sulfide (BaZrS3) is an earth-abundant and environmentally friendly chalcogenide perovskite with promising properties for various energy conversion applications. Recently, sulfurization of oxide precursors has been suggested as a viable solution for effective synthesis, especially from the perspective of circumventing the difficulty...
Wide bandgap halide perovskite materials show promising potential to pair with silicon bottom cells. To date, most efficient wide bandgap perovskites layers are fabricated by spin-coating, which is difficult to scale up. Here, we report on slot-die coating for an efficient, 1.68 eV wide bandgap triple-halide (3halide) perovskite absorber, (Cs0.22FA...
Among various types of perovskite-based tandem solar cells (TSCs), all-perovskite TSCs are of particular attractiveness for building- and vehicle-integrated photovoltaics, or space energy areas as they can be fabricated on flexible and lightweight substrates with a very high power-to-weight ratio. However, the efficiency of flexible all-perovskite...
Chalcogenide perovskites have recently emerged into the spotlight as highly robust, earth abundant, and nontoxic candidates for various energy conversion applications, not least photovoltaics (PV). Now, a serious effort is required to determine if they can emulate the PV performance of the better‐known, part‐organic halide perovskites, in applicati...
Perovskite quantum dots (PQDs) have many properties that make them attractive for optoelectronic applications, including expanded compositional tunability and crystallographic stabilization. While they have not achieved the same photovoltaic (PV) efficiencies of top-performing perovskite thin films, they do reproducibly show high open circuit volta...
Ideally, the charge carrier lifetime in a solar cell is limited by the radiative free carrier recombination in the absorber which is a second‐order process. Yet, real‐life cells suffer from severe nonradiative recombination in the bulk of the absorber, at interfaces, or within other functional layers. Here, the dynamics of photogenerated charge car...
It is attractive to alloy Cu(In,Ga)Se2 solar‐cell absorbers with Ag (ACIGSe), since they lead to similar device performances as the Ag‐free absorber layers, while they can be synthesized at much lower deposition temperatures. However, a KF post‐deposition treatment (PDT) of the ACIGSe absorber surface is necessary to achieve higher open‐circuit vol...
The rear interface of kesterite absorbers with Mo back contact represents one of the possible sources of nonradiative voltage losses (ΔVoc,nrad) because of the reported decomposition reactions, an uncontrolled growth of MoSe2, or a nonoptimal electrical contact with high recombination. Several intermediate layers (IL), such as MoO3, TiN, and ZnO, h...
Through the optimization of the perovskite precursor composition and interfaces to selective contacts, we achieved a p-i-n-type perovskite solar cell (PSC) with a 22.3% power conversion efficiency (PCE). This is a new performance record for a PSC with an absorber bandgap of 1.63 eV. We demonstrate that the high device performance originates from a...
The earth-abundant ternary compound BaZrS3, which crystallizes in the perovskite-type structure, has come into view as a promising candidate for photovoltaic applications. We present the synthesis and characterization of polycrystalline perovskite-type BaZrS3 thin films. BaZrO3 precursor layers were deposited by pulsed laser deposition and sulfuriz...
Solar cells with the structure ZnO/CdS/Cu2ZnSnSe4/Mo/glass were studied by photoluminescence (PL) before and after irradiation with a dose of 1.8 × 10¹⁵ cm⁻² and then 5.4 × 10¹⁵ cm⁻² of 10 MeV electrons carried out at 77 K in liquid nitrogen bath. The low temperature PL spectra before irradiation revealed two bands, a broad and asymmetrical dominan...
Efficiency from hole-selective contacts
Perovskite/silicon tandem solar cells must stabilize a perovskite material with a wide bandgap and also maintain efficient charge carrier transport. Al-Ashouri et al. stabilized a perovskite with a 1.68–electron volt bandgap with a self-assembled monolayer that acted as an efficient hole-selective contact tha...
Kesterite‐based solar cells suffer from a large open‐circuit voltage deficit, which largely arises from carrier recombination at the buffer interface. In this study, we compare two strategies to passivate the absorber surface in order to fabricate devices with power conversion efficiency higher than 10% and an open‐circuit voltage deficit as low as...
In this communication, we present the phase diagram of CsPb(BrxI1−x)3 (0 ≤ x ≤ 1, 300–585 K) obtained by high-throughput in situ GIWAXS measurements of a combinatorial thin film library. We find that all compositions convert to the cubic perovskite phase at high temperature and that the presence of bromide in the films stabilizes the metastable per...
Thin-film solar cells based on polycrystalline absorbers have reached very high conversion efficiencies of up to 23-25%. In order to elucidate the limiting factors that need to be overcome for even higher efficiency levels, it is essential to investigate microscopic origins of loss mechanisms in these devices. In the present work, a high efficiency...
To optimize the opto-electronic properties of compound semiconductors, a detailed understanding and control of compositional gradients forming during their synthesis is crucial. A common fabrication process for Cu(In,Ga)Se2 (CIGS) thin-film solar cells uses annealing at high temperatures, which—contrary to what could be expected from simple Fickian...
The phase mixture CsPb2Br5/CsPbBr3 has raised interest as promising material system for light emission, for light detection, and even for photovoltaic devices owing to its high luminescence yield and improved device performance when compared with pure CsPbBr3 devices. Given that CsPb2Br5 and CsPbBr3 exhibit similar formation enthalpies, thermal tre...
The earth-abundant quaternary compound Cu2BaSnS4 is being currently studied as a candidate for photovoltaics and as a photocathode for water splitting. However, the chemical stability of this phase during synthesis is unclear. The synthesis of other quaternary tin–sulphur-based absorbers (e.g., Cu2ZnSnS4) involves an annealing step at high temperat...
The performance of Cu2ZnSnSe4 solar cells is presently limited by low values of open-circuit voltage which are a consequence of strong band tailing and high level of nonradiative recombination. Recently, the partial substitution of Cu, Zn, and Sn by other elements has shown the potential to overcome this limitation. We explored the structural chang...
Photoluminescence spectroscopy is a widely applied characterization technique for semiconductor materials in general and halide perovskite solar cell materials in particular. It can give direct information on the recombination kinetics and processes as well as the internal electrochemical potential of free charge carriers in single semiconductor la...
Selenization of stacked elemental metallic layers (Cu‐Sn‐Zn) is a commonly reported approach in kesterite Cu2ZnSnSe4 (CZTSe) processing. CZTSe formation via this approach usually involves a reaction route containing binary selenides, such as SnSe2‐x. The high volatility of these phases at the necessary annealing temperatures (500 – 550 °C) makes th...
The Shockley-Queisser (SQ) limit provides a convenient metric for predicting light-to-electricity conversion efficiency of a solar cell based on the band gap of the light-absorbing layer. In reality, few materials approach this radiative limit. We develop a formalism and computational method to predict the maximum photovoltaic efficiency of imperfe...
Halide perovskites are a strong candidate for the next generation of photovoltaics. Chemical doping of halide perovskites is an established strategy to prepare the highest efficient and the most stable perovskite-based solar cells. In this study, we unveil the doping mechanism of halide perovskites using the series of alkaline earth metals. We find...
The identification of performance‐limiting factors is a crucial step in the development of solar cell technologies. Cu2ZnSn(S,Se)4‐based solar cells have shown promising power conversion efficiencies in recent years, but their performance remains inferior compared to other thin‐film solar cells. Moreover, the fundamental material characteristics th...
The effect of sodium doping in NiO as a contact layer for perovskite solar cells is investigated. A combined X‐ray diffraction and X‐ray photoelectron spectroscopy analysis reveals that Na+ mostly segregates as NaOx/NaCl species around NiO crystallites, with the effect of reducing interface capacitance as revealed by impedance spectroscopy. Inspire...
Charge transport layers (CTLs) are key components of diffusion controlled perovskite solar cells, however, they can induce additional non-radiative recombination pathways which limit the open circuit voltage (V_OC) of the cell. In order to realize the full thermodynamic potential of the perovskite absorber, both the electron and hole transport laye...
Earth-abundant copper barium thioselenostannate, Cu2BaSn(S,Se)4, absorbers have recently demonstrated promising optoelectronic and defect resistance properties for solar harvesting applications. The highest photovoltaic device efficiencies have been achieved in vacuum-based co-sputter deposited films, yet there is a tendency for a multilayer format...
Lead bromide-based halide perovskites are of interest for wide-band-gap (>1.75 eV) absorbers for low-cost solar spectrum splitting to boost solar-to-electrical energy conversion efficiency/area by adding them to c-Si or Cu(In,Ga)Se2 PV cells and for photoelectrochemical solar fuel synthesis. Deep in-gap electronic states in PV absorbers serve as re...
Understanding the relationship of photoexcited carrier lifetimes, mobilities, and recombination mechanisms to structural properties and processing of photovoltaic (PV) absorber materials is critical to the design of efficient solar cells. Carrier dynamics in PV absorbers have conventionally been characterized by time-resolved photoluminescence (TRP...
The effect of solar cell processing (including etching in KCN along with deposition of CdS and ZnO) on photoluminescence (PL) spectra and bandgap Eg (measured at 4.2 K by photoluminescence excitation) of Cu2ZnSnSe4 films, produced by selenising metallic precursors at 450 °C, 500 °C and 550 °C, was studied. Temperature and excitation intensity analy...
Doped Spiro-OMeTAD at present is the most commonly used hole transport material (HTM) in n-i-p type perovskite solar cells, enabling high efficiencies around 22%. However, the required dopants were shown to induce non-radiative recombination of charge carriers and foster degradation of the solar cell. Here, in a novel approach, highly conductive an...
Perovskite-based tandem solar cells can increase the power conversion efficiency (PCE) of conventional single-junction photovoltaic devices. Here, we present monolithic perovskite/CIGSe tandem solar cells with a perovskite top cell fabricated directly on an as-grown, rough CIGSe bottom cell. To prevent potential shunting due to the rough CIGSe surf...
The incorporation of even small amounts of strontium (Sr) into lead-based quadruple cation hybrid perovskite solar cells results in a systematic increase of the open circuit voltage (Voc) in pin-type perovskite solar cells. We demonstrate via absolute and transient photoluminescence (PL) experiments how the incorporation of Sr significantly reduces...
We demonstrate open-circuit voltages exceeding
1.26 V for inverted planar CH3NH3PbI3 solar cells fabricated
using a combination of lead acetate and PbCl2 precursors
leading to smooth films and large grain sizes. Surface
recombination is suppressed by careful optimization of the
PTAA hole transport and PCBM electron transport layers. Suppression of...
Cu2ZnSnSe4 (CZTSe) is one of the leading candidates for the absorber layer in sustainable solar cells. Thin films of CZTSe with a near stoichiometric [Cu]/[Zn + Sn] were used to produce solar cells with conversion efficiency η = 6.4% by a standard solar cell processing including KCN etching and the deposition of CdS and ZnO. Both CZTSe films and so...
Cu2ZnSnSe4 (CZTSe) is a semiconductor used as the absorber layer in highly promising sustainable thin film solar cells. The authors study the effect of Ar⁺ etching of copper deficient and zinc excess CZTSe thin films deposited on Mo/glass substrates on the surface elemental composition, measured by x-ray photoelectron spectroscopy, and photolumines...
The incorporation of even small amounts of strontium (Sr) into lead-based quadruple cation hybrid perovskite solar cells results in a systematic increase of the open circuit voltage (Voc) in pin-type perovskite solar cells. We demonstrate via transient and absolute photoluminescence (PL) experiments how the incorporation of Sr significantly reduces...
The performance‐boosting effect of alkali treatments is well known for chalcogenide thin‐film solar cells based on Cu(In,Ga)Se2 (CIGS) and Cu2ZnSn(S,Se)4 (CZTSSe–kesterite) absorbers. In contrast to heavier alkali elements, lithium is expected to alloy with the kesterite phase leading to the solid solution (LixCu1−x)2ZnSn(S,Se)4 (LCZTSSe), which of...
Charge transport layers (CTLs) are key components of diffusion controlled perovskite solar cells, however, they can induce additional non-radiative recombination pathways which limit the open circuit voltage (V_OC) of the cell. In order to realize the full thermodynamic potential of the perovskite absorber, both the electron and hole transport laye...
The performance of many emerging compound semiconductors for thin‐film solar cells is considerably lower than the Shockley–Queisser limit, and one of the main reasons for this is the presence of various deleterious defects. A partial or complete substitution of the cations presents a viable strategy to alter the characteristics of the detrimental d...
A variety of approaches is being used to fabricate kesterite absorbers, such as sputtering, co-evaporation and solution based techniques. Annealing at high temperatures is a common processing step to stimulate elemental mixing and grain growth. This study investigates the effect of pre-annealing of metal stack precursors at 150 °C, 200 °C, 300 °C a...
Metal halide perovskite solar cells are now effectively competing with their inorganic counterparts in terms of power conversion efficiencies. However, state of the art perovskite solar cells still suffer from limited fill factor (FF) and open circuit voltage (Voc), which has been related to non-geminate losses mostly happening at the surface of th...
The continuous improvement of Cu(In,Ga)Se2 (CIGSe) solar cells relies considerably on advanced characterization
of individual layers in the solar-cell stacks as well as of completed CIGSe devices. The present contribution
provides an overview of corresponding efforts performed by various research groups at Helmholtz-
Zentrum Berlin für Materialien...
Kesterite (CZTSe) is a promising thin film photovoltaic absorber material due to its composition of more earth abundant materials compared to mature thin film photovoltaic technologies. Up to now, power conversion efficiencies are still lower and its main problem is the low open circuit voltage (Voc). Recently, a novel sintering approach using a na...
By extracting profiles perpendicular to the substrate from images obtained by electron-beam-induced current measurements on Cu(In,Ga)Se2 (CIGS) solar cells, fluctuations in the width of the space-charge region as well as in the diffusion length in the quasi-neutral region were studied. Devices with various solution-grown buffer layers as well as di...
As the open-circuit voltage in CZTSSe devices is believed to be limited by absorber band tailing caused by the exceptionally high density of Cu/Zn disorder, replacing of Cu with Ag this density is predicted to drop. In this study, neutron diffraction and diffuse reflectance were applied to evaluate the crystal structure and optoelectronic propertie...
The substitution of Ge⁴⁺ for Sn⁴⁺ in Cu2ZnSn(S,Se)4 (CZTSSe) kesterite-type absorber layers for thin film solar cells has proven to enhance the opto-electronic properties of the material. By cationic substitution, in general, the optical bandgap can be more readily designed for the purpose of bandgap engineering, and the substitution of Sn⁴⁺ by Ge⁴...
Inhomogeneities in Cu(In,Ga)Se2 thin films have been reported to lead to band-gap or electrostatic potential fluctuations, which may reduce the photovoltaic performance of the corresponding solar cells via enhanced recombination. The issue of where these inhomogeneities occur in the Cu(In,Ga)Se2 absorber has so far not been discussed in detail in l...
We present an optical spectroscopy study of Cu2ZnSnSe4 (CZTSe) thin films deposited on Mo/glass substrates. The [Cu]/[Zn+Sn] ratio in these films varies from nearly stoichiometric to strongly Cu deficient and Zn rich. Increasing Cu deficiency and Zn excess widens the bandgap Eg, determined using photoluminescence excitation (PLE) at 4.2 K, from 0.9...
We present structural and optical spectroscopy studies of thin films of Cu2ZnSnSe4 (CZTSe) with strong copper deficiency deposited on Mo/Glass substrates and selenised at 450, 500 or 550 °C. Solar cells fabricated from these films demonstrated efficiencies up to 7.4% for selenisation at 500 °C. Structural analysis based on X-ray diffraction and Ram...
Cu2SnS3 (CTS) is starting to gain interest in the PV research community as an alternative earth abundant absorber for thin film photovoltaics. In this work, the structure, morphology and the composition of the CTS absorbers as well as their influence on the optoelectronic properties of the solar cells are analysed. The synthesis of Cu-Sn-S thin fil...
Cu2ZnSnSe4 (CZTSe) is a promising thin film photovoltaic absorber material. However, up to
now its main problem is the low open circuit voltage (Voc) compared to more mature thin film
photovoltaic technologies. Most kesterite synthesis routes employ a two-step approach consisting
of precursor deposition followed by a crystallization step. In this s...
High-performance kesterite- (CZTSe-)based solar cell devices usually employ an absorber/buffer heterostructure using toxic CdS deposited by chemical bath deposition (CBD) as a buffer layer. This is due to the favourable spike-like conduction band alignment of the CdS buffer and CZTSe absorber. ZnS(O,OH) buffer layers provide a promising nontoxic al...
Kesterite thin films solar cells have been studied in recent years as a potential earth abundant alternative to other thin film technologies such as the ones based on the chalcopyrite Cu(In,Ga)Se2 (CIGS). However, the efficiency of the kesterite devices is still low and needs further development. In order to increase the performance of the kesterit...
Thin films of Cu2ZnSnSe4 (CZTSe) with copper deficiency and zinc excess were fabricated at Northumbria University by the selenisation of metallic precursors deposited on Mo/glass and bare glass substrates. Absorption and photoluminescence (PL) measurements were used to examine the film on glass whereas films on Mo/glass were used to produce a solar...
Kesterite thin films solar cells have been studied in recent years as a potential earth abundant alternative to other thin film technologies such as the ones based on the chalcopyrite Cu(In,Ga)Se2 (CIGS). However, the efficiency of the kesterite devices is still low and needs further development. In order to increase the performance of the kesterit...