Jitendra BeheraDalian University of Technology | DUT · School of optoelectronic engineering and instrumentation science
Jitendra Behera
Doctor of Engineering
About
20
Publications
10,296
Reads
How we measure 'reads'
A 'read' is counted each time someone views a publication summary (such as the title, abstract, and list of authors), clicks on a figure, or views or downloads the full-text. Learn more
528
Citations
Citations since 2017
Introduction
Experienced postdoctoral researcher with a demonstrated history of working in the research and industry. 7+ years of experience in the applied research area of Material Science and Nanotechnology. Skilled in Materials' Design and Growth, Thin Film Coating, Materials' Characterisation, Plasmonics, and LabView. Expertise in designing the micro/nano-structure of materials with tuneable properties using statistical DoE methods and used them for data storage and reprogrammable optical filters.
Education
September 2013 - July 2018
Singapore University of Technology and Design
Field of study
- Materials Engineering
August 2008 - June 2010
Publications
Publications (20)
Perfect absorption ranging from visible, infrared, terahertz, to microwave is desirable for solar cell, photodetection, telecommunications, and molecular sensing. Recently, the air/dielectric–metal stacks/substrate‐based asymmetric Fabry–Pérot (FP) cavity has attracted much attention owing to lithography‐free design which is scalable and low cost....
Metamaterial (MM) perfect absorbers are realised over the various spectra from visible to microwave. Recently, different approaches have been explored to integrate tunability into the MM absorbers. Particularly, tuning has been illustrated through electrical-, thermal-, and photo- induced change to the permittivity of an active medium within the MM...
Chalcogenide based phase change random access memory (PCRAM) holds great promise for high speed and large data storage applications. This memory is scalable, requires a low switching energy, has a high endurance, has fast switching speed, and is nonvolatile. However, decreasing the switching time whilst increasing the cycle endurance is a key chall...
Thermal lithography is an alternative technique that can fabricate patterns beyond the diffraction limit. In thermal lithography, it is hard to obtain morphology on demand due to the difficulty in controlling thermal diffusion caused by the long laser pulses. To address this issue, enhanced thermal lithography with multiple femtosecond laser pulse...
![a Schematic of Au/Ge2Sb2Te5\documentclass[12pt]{minimal}...](publication/328704500/figure/fig3/AS:779420054851596@1562839630598/a-Schematic-of-Au-Ge2Sb2Te5documentclass12ptminimal-usepackageamsmath_Q320.jpg)
![XRD patterns from Au/Ge2Sb2Te5\documentclass[12pt]{minimal}...](publication/328704500/figure/fig5/AS:779420054868025@1562839630879/XRD-patterns-from-Au-Ge2Sb2Te5documentclass12ptminimal-usepackageamsmath_Q320.jpg)
This work investigates the diffusion of metal atoms into phase change chalcogenides, which is problematic because it can destroy resonances in photonic devices. Interfaces between \(\hbox {Ge}_2\hbox {Sb}_2\hbox {Te}_5\) and metal layers were studied using X-ray reflectivity and reflectometry of metal–\(\hbox {Ge}_2\hbox {Sb}_2\hbox {Te}_5\) layere...
This work investigates the problematic diffusion of metal atoms into phase change chalcogenides, which can destroy resonances in photonic devices. Interfaces between Ge2Sb2Te5 and metal layers were studied using X-ray reflectivity (XRR) and reflectometry of metal-Ge2Sb2Te5 layered stacks. The diffusion of metal atoms influences the crystallisation...
Light strongly interacts with structures that are of a similar scale to its wavelength; typically nanoscale features for light in the visible spectrum. However, the optical response of these nanostructures is usually fixed during the fabrication. Phase change materials offer a way to tune the properties of these structures in nanoseconds. Until now...
The objective of this work is to design and demonstrate multilevel optical switches by combining different phase change materials. Ge2Sb2Te5 and VO2 nanolayer structures were designed to maximize the optical contrast between four different reflective states. These different optical states arise due to the independent structural phase transitions of...
Tunable and reconfigurable functionalities are crucial for advanced photonic devices. In this study, CSb2Te3 is proposed as a new optical tuning material. Single‐shot picosecond laser pulses are used to transform the CSb2Te3 into six different optical states; each optical state can be achieved from any other state. The dielectric function for each...
The objective of this paper is to demonstrate that Ag readily diffuses into Sb 2 S 3 and that electric fields can control the diffusion. Ag diffusion influences the crystallization temperature and electrical properties of Sb 2 S 3 . We studied the interface between Ag and Sb 2 S 3 using X-ray reflectivity and show that the Ag cations can be control...
The objective of this work is to demonstrate the usefulness of fractional factorial design for optimising the crystal quality of chalcogenide van der Waals (vdW) crystals. We statistically analyse the growth parameters of highly c-axis oriented Sb2Te3 crystals and Sb2Te3-GeTe phase change vdW heterostructure superlattices. The statistical significa...
The objective of this paper is to review the characterisation methods and procedures used to laser switch phase change materials, and then assess their applicability for characterising phase change materials for active photonics devices. Specifically we characterise the performance of our pump-probe laser system and compare it with other ‘static’ a...
By confining phase transitions to the nanoscale interface between two different crystals, interfacial phase change memory heterostructures represent the state of the art for energy efficient data storage. We present the effect of strain engineering on the electrical switching performance of the –GeTe superlattice van der Waals devices. Multiple Ge...
We use an evolutionary algorithm to explore the design space of hexagonal Ge2Sb2Te5; a van der Waals layered two dimensional crystal heterostructure. The Ge2Sb2Te5 structure is more complicated than previously thought. Predominant features include layers of Ge3Sb2Te6 and Ge1Sb2Te4 two dimensional crystals that interact through Te-Te van der Waals b...
Studies in design are often done using novice design engineers such as students as test subjects. In this paper, we attempt to determine differences in cognition skills between novice and expert design engineers, in order to determine the utility and validity of using students as experimental test subjects in design science research. An epistemolog...
Questions
Questions (6)
- Ge-Sb-Te-based chalcogenide materials change their phase from crystalline to amorphous when exposed to ultrashort heat pulse. What happens to the atomic state level that these materials show such properties? In other words, how can I explain this mechanism simple and lucid way to a person from a different field of research?
- Why is this switching not happening in other covalent bonded materials like Silicon?
- If we consider its resonant bonding as an explanation, many carbon compounds are covalently bonded and have resonant bonding, then why are they not showing such properties?
- If we consider the delocalization of charge carriers in the crystalline state, which ultimately enhances the optical properties, then how does this theory explain the significant contrast in electrical resistance
- The no of charge carriers (order) in the amorphous and crystalline states are quite similar, and the bandgap is very close to each other. What is the real origin of such a considerable change in resistance upon structural change?
I just want to know how the no of periods are related to the HMM properties. According to EMA approximation, the no of periods does not have any effect on it.
Dear all Resercher,
I am using a Q-switching laser (Quintel-850) operating at 532 nm, 5ns pulse duration with a 10 kHz repetation rate by using the double harmonic generation. The out put laser pulse is about 430 mJ. We found that the laser beam has some circular fringe patterns. Could any one kindly suggest how we can remove the fringes which are coming from the laser itself? I have attached a pdf copy in which the beam profiles are shown ?
I just want to know the static dielectric constant of the Ge2Sb2Te5 Phase change materials in its crystalline state
HI,
I am completely new to the LabView. I want to control an X-Y linear stage by the ZOLIX stepper motion controller.
I don't have a driver for this particular device.
I want to use VISA to do this.
But I don't know how doing this.
Any body can help me out.
Anybody has some VI, so that. It can greatly help me to learn, how making this program.
Thank you in advance.
I want to control my Agilent 33250A arbitrary function generator to produce single and multiple pulse of different width (in order of nanosecond). Can somebody help me regarding this or the VI file if any body have it.
I want to have an interface with GPIB.
Projects
Projects (2)
