Jianxin Shen

Jianxin Shen
Chinese Academy of Sciences | CAS · Institute of Physics

PhD Student

About

15
Publications
2,372
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238
Citations

Publications

Publications (15)
Article
Full-text available
Memtranstor that correlates charge and magnetic flux via nonlinear magnetoelectric effects has a great potential in developing next-generation nonvolatile devices. In addition to multi-level nonvolatile memory, we demonstrate here that nonvolatile logic gates such as NOR and NAND can be implemented in a single memtranstor made of the Ni/PMN-PT/Ni h...
Article
Full-text available
The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric memories have been proposed and explored in the past decade. Here we propose a new principle to realize a multil...
Article
Memtranstor that correlates charge and magnetic flux via nonlinear magnetoelectric effects has a great potential in developing next-generation nonvolatile devices. In addition to multilevel nonvolatile memory, we demonstrate here that nonvolatile logic gates such as NOR and NAND can be implemented in a single memtranstor made of the Ni=PMN-PT=Ni he...
Article
Transtance change random access memory (TCRAM) is a type of nonvolatile memory based on the nonlinear magnetoelectric coupling effects of multiferroics. In this work, ferroelectric P(VDF-TrFE) thin films was prepared on Metglas foil substrates by sol-gel technique to form multiferroic heterostructures. The magnetoelectric voltage coefficient of the...
Article
We have developed a sensitive technique to probe the magnetic skyrmion phases and dynamics by employing the interfacial coupling effect in a magnetoelectric composite configuration. The study on a MnSi single crystal sample using this technique provides clear evidence for the skyrmion lattice phase and coexistence of skyrmion and conical phase. Abo...
Article
A memtranstor that directly correlates charge (q) and magnetic flux (φ) via the nonlinear magnetoelectric effects is considered as the fourth memelement in addition to the memristor, memcapacitor, and meminductor. Just like the well-known memristor, the memtranstor also holds a great potential for developing advanced electronic devices such as nonv...
Preprint
A wide class of condensed matter systems can be effectively described as a collection of interacting quasi-particles, like the vortices in type-II superconductors, charge density waves, Wigner crystals of electrons, and Skyrmion phase in chiral magnets, by forming a hexagonal lattice of particles. For weak disorder, the close-packed assembly genera...
Article
The magnetoelectric coupling effect in materials provides an additional degree of freedom of physical states for information storage and shows great potential in developing a new generation of memory devices. We use an alternative concept of nonvolatile memory based on a type of nonlinear magnetoelectric effects showing a butterfly-shaped hysteresi...
Article
The magnetoelectric effects in multiferroics have a great potential in creating next-generation memory devices. We conceive a new concept of non-volatile memories based on a type of nonlinear magnetoelectric effects showing a butterfly-shaped hysteresis loop. The principle is to utilize the states of the magnetoelectric coefficient, instead of magn...

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