Jean-François Millithaler

Jean-François Millithaler
University of Massachusetts Lowell | UML · Department of Electrical & Computer Engineering

PhD Degree

About

70
Publications
3,664
Reads
How we measure 'reads'
A 'read' is counted each time someone views a publication summary (such as the title, abstract, and list of authors), clicks on a figure, or views or downloads the full-text. Learn more
397
Citations
Citations since 2017
10 Research Items
158 Citations
2017201820192020202120222023010203040
2017201820192020202120222023010203040
2017201820192020202120222023010203040
2017201820192020202120222023010203040
Additional affiliations
July 2013 - June 2014
Université de Montpellier
Position
  • Researcher
February 2012 - May 2013
Universidad de Salamanca
Position
  • PostDoc Position

Publications

Publications (70)
Article
In this work, In0.53Ga0.47As planar Gunn diodes specifically designed for providing oscillations at frequencies below 30 GHz have been fabricated and characterized. Different types of measurements were used to define a set of consistent methods for the characterization of the oscillations that can be extended to the sub-THz frequency range. First,...
Article
Aptamers represent a challenging field of research, relevant for diagnosis in macular degeneration, cancer, thrombosis and many inflammatory diseases, and promising in drug discovery and development. Their selection is currently performed by a stable in vitro technology, namely, SELEX. Furthermore, computationalstatistical tools have been developed...
Conference Paper
THz technology is a promising field due to its broad domain of practical applications, from high-speed communications to medical imaging. However, the development of room temperature and low-cost THz devices is still a challenge. The most common solid state THz sources are based on the frequency multiplication of low frequency fundamental oscillato...
Article
In this paper, an innovative Terahertz (THz) Ballistic Deflection Transistor (BDT) Travelling Wave Amplifier (TWA) system is proposed. The BDT is an innovated technology device based on InGaAs/InAlAs/InP, able to operate at THz frequencies. The whole BDT TWA system design is based on a lossless THz transmission line called Parallel Plate Dielectric...
Article
Full-text available
In this paper a new waveguide design is proposed to be implemented as part of Ballistic Deflection Transistor (BDT) Traveling Wave Amplifier Design. The BDT is designed to be operated in the Terahertz regime. Due to its relatively low transconductance (gm=200µA/V), the entire structure will consist of ten stages, with 15 BDTs/stage, to reach a tota...
Article
In this paper, we propose a design of traditional sequential circuits using high performance Ballistic Deflection Transistor (BDT). BDT technology was developed and experimentally proven to operate at Terahertz frequencies. Different structures of BDTs have been developed successfully to realize combinational logic functionality. Monte Carlo (MC) s...
Conference Paper
In this paper, study of different digital logic circuits developed using two-BDT ballistic nanostructure is presented. New D flip-flop (DFF) based on the same nanostructure is also proposed. The logic structure comprises two ballistic deflection transistors (BDTs) that are experimentally proven to operate at Terahertz frequencies. The non-linear be...
Article
Full-text available
This paper presents a comprehensive study of the behavior of surface charges in ballistic deflection transistors, at room temperature, where the in-plane geometry associating two drains with two gates in push-pull modes allows the control of electron path. Monte Carlo simulations were performed and compared with experimental data by using different...
Article
Full-text available
This paper presents an optimization of the current-voltage characteristic of Ballistic Deflection Transistors. The implementation of an adequate surface charge model in a Monte Carlo tool shows a very good agreement with the available experimental data and allows us to predict the influence of different parameters, like temperature, channel and tre...
Conference Paper
In this paper, we explore the feasibility of a digital latch design using ballistic deflection transistors (BDTs). An analytical model, based on Monte Carlo simulations for different sizes of BDTs, has been integrated into a behavioral Verilog A module to facilitate the investigation of digital latch design. The simulation results indicate interest...
Conference Paper
Graphene nanoribbon has altered the perspective of future electronics device industries. Post silicon based technology, Graphene nanoribbon is now considered the most promoting materials for the next generation electronics. Armchair graphene nanoribbon is one of two prototypes of graphene which is widely known for its semiconducting properties limi...
Article
Full-text available
In this paper, we perform, by means of Monte Carlo simulations and experimental measurements, a geometry optimization of GaN-based nano-diodes for broadband Terahertz direct detection (in terms of responsivity) and mixing (in terms of output power). The capabilities of the so-called self-switching diode (SSD) are analyzed for different dimensions o...
Article
Full-text available
A study of the high-frequency performance of GaN-based asymmetric self-switching diodes (SSDs) designed for a room-temperature sub-THz Gunn emission, and connected to a resonant RLC parallel circuit, is reported. With the aim of facilitating the achievement and control of Gunn oscillations, which can potentially allow the emission of THz radiation...
Conference Paper
Full-text available
In this work we present a theoretical study based on time-domain Monte Carlo (MC) simulations of GaN-based Self-Switching Diodes (SSDs) oriented to the experimental achievement and control of the sub-THz Gunn-oscillations potentially provided by these devices. With this aim, an analysis of the frequency performance of SSDs connected to a resonant R...
Article
Full-text available
In this work, recent advances in the design of GaN planar Gunn diodes with asymmetric shape, so-called self-switching diodes, are presented. A particular geometry for the nanodiode is proposed, referred as V-shape, where the width of the channel is intentionally increased as approaching the anode. This design, which reduces the effect of the surfac...
Conference Paper
We report on the first use of a THz detector based on InAs rectifying nanochannels in a communication system. The transmitter is composed of an electronic multiplication chain, externally amplitude modulated at the input signal. The system has been driven at 200 GHz and up to 500 Mbps data signals have been transmitted in an indoor configuration. I...
Conference Paper
By means of Monte Carlo simulations, we calculate (and compare with experimental results) the Noise Equivalent Power (NEP) in AlGaN/GaN-based submicron self-switching diodes at zero bias and provide guides for detection optimization in terms of number of devices and geometry (width and length of the channel). We also calculate the NEP under biased...
Conference Paper
Full-text available
In this paper we present the advances on the fabrication of THz emitters and detectors obtained within the framework of the European ROOTHz project. Two types of devices are explored, self-switching diodes and slot-diodes, using both narrow bandgap and wide bandgap semiconductors. This broad approach allows us to improve the frequency and power gen...
Conference Paper
Full-text available
An attempt of exploitation of very high frequency Gunn oscillations to generate a TeraHertz radiation is realized with an asymetric planar GaN self-switching diode. In this work we compare the measured static behavior of real devices with calculations performed by means of Monte Carlo simulations. We analyze the influence of the temperature on the...
Article
Full-text available
The potentialities of AlGaN/GaN nanodevices as THz detectors are analyzed. Nanochannels with broken symmetry (so called self switching diodes) have been fabricated for the first time in this material system using both recess-etching and ion implantation technologies. The responsivities of both types of devices have been measured and explained using...
Article
Full-text available
Sensing proteins (receptors) are nano-structures of about 5 nm diameter that exhibit very complex behaviors (they can pump ions, use energy from the environment, change their conformation, catalyze some reactions, etc). They are constituted by a specific sequence of amino acids (primary structure) and in this sequence the space organization (tertia...
Article
Full-text available
We investigate a particular phase transition between two different tunneling regimes, direct and injection (Fowler-Nordheim), experimentally observed in the current-voltage characteristics of the light receptor bacteriorhodopsin (bR). Here, the sharp increase of the current above about 3 V is theoretically interpreted as the cross-over between the...
Article
Full-text available
Increasing attention has been recently devoted to protein-based nanobiosensors. The main reason is the huge number of possible technological applications, going from drug detection to cancer early diagnosis. Their operating model is based on the protein activation and the corresponding conformational change, due to the capture of an external molecu...
Article
Full-text available
We present a joint analytical and numerical study of plasmonic noise in gated semiconductor slabs of arbitrary thickness. Through the analysis of the high-frequency spectral density of voltage fluctuations we show that the positions of the frequency resonances depend on the topology of the slabs. A transition from a 2D to a 3D behavior is revealed...
Article
Full-text available
We present an analytical model suitable for the study of the plasma modes in gated semiconductor slabs of arbitrary thickness. A pseudo-two-dimensional Poisson equation allows us to consider both transverse and longitudinal electric field variations. We calculate the dispersion relation demonstrating the dispersive nature of the slab. We express th...
Article
Full-text available
Current-voltage (I-V) characteristics in proteins are sensitive to conformational changes induced by an external stimulus (photons, chemical, etc.). This sensitivity can be used in medical and industrial applications as well as shedding new light on the microscopic structure of biological materials. Here, we show that a sequential tunneling model o...
Article
Full-text available
In this paper we explore relevant electrical properties of two olfactory receptors (ORs), one from rat OR I7 and the other from human OR 17-40, which are of interest for the realization of smell nanobiosensors. The investigation compares existing experiments, coming from electrochemical impedance spectroscopy, with the theoretical expectations obta...
Article
Full-text available
We report on charge transport and current fluctuations in a single bacteriorhodpsin protein in a wide range of applied voltages covering direct and injection tunnelling regimes. The satisfactory agreement between theory and available experiments validates the physical plausibility of the model developed here. In particular, we predict a rather abru...
Article
By Monte Carlo simulations we investigate the plasma spectrum in n-type InGaAs field effect transistors at 300 K in the whole region of operating conditions from ohmic to saturation regime of the transconductance characteristics. The presence of a two dimensional (2D) plasma peak predicted within the gradual channel approximation is confirmed by th...
Article
We propose a nanosensor with a biological active part able to identify specific odorants. The biological part should be constituted by olfactory receptors pertaining to the G protein-coupled receptors, the most efficient natural sensors for odorant discrimination. Modeling, design, and experiments performed for proving the concept are reported and...
Article
Full-text available
We report a microscopic investigation of the spectrum of voltage fluctuations in nanometric n-Si layers. Theory makes use of a Monte Carlo simulator self-consistently coupled with a two-dimensional Poisson solver. We consider layers of variable thickness W in the range of 2 – 100 nm and variable length L in the range of 10– 1000 nm embedded in an e...
Article
Full-text available
By Monte Carlo simulations we investigate the spectrum of voltage fluctuations of Si layers of variable thickness W in the range 2 ÷ 100 nm and variable length L in the range 10÷1000 nm embedded in an external dielectric medium. Calculations are performed at T = 300 K for different doping levels and in the presence of an external bias of increasing...
Article
Full-text available
By numerical simulations we investigate the dispersion of the plasma frequency in a gated channel of n-type InGaAs layer of thickness W and submicron length L at T = 300 K. In the presence of a source-drain voltage and for a carrier concentrations of 1018 cm?3 the spectra evidences a peaked shape with two main bumps, the former at high frequency co...
Article
Full-text available
We propose an electronic nose of new generation, i.e. a nanosensor based on the use of large biomolecules, olfactory receptors, as sensing material. Modelling, design and experiments performed for proving the concept are reported and discussed.
Conference Paper
Full-text available
Modern technology allows the downsizing of electronic devices deeply into the nano-metric scale thus reducing the electrons transit time between contacts. By means of Monte Carlo simulations coupled with a two-dimensional Poisson solver, we have analysed the transition from diffusive to ballistic transport in InAs channels of differents lengths. Th...
Article
We investigate plasmonic noise in ungated and gated n-In0.53Ga0.47As nanochannels at room-temperature, in the absence and in the presence of an external bias by Monte Carlo simulations. The results are in agreement with analytical models but exhibit new behaviours associated with the realistic microscopic models of the system under interest. Genera...
Article
Full-text available
By means of numerical simulations we investigate voltage and current fluctuation spectra of an n-type In0.53Ga0.47As layer of thickness W and submicron length L at T = 300 K. In agreement with theoretical expectations, for a plasma time longer than the dielectric relaxation time, the spectral density of the voltage fluctuations is found to peak at...
Article
Full-text available
By means of numerical simulations we investigate the plasma frequency associated with voltage fluctuations in an n-type In0.53Ga0.47As layer of thickness W and submicron length L embedded in a dielectric medium at T = 300 K. For W = 100 nm and carrier concentrations of 1016-1018 cm3 the results are in good agreement with the standard three-dimensio...
Article
Full-text available
The conditions for THz radiation generation caused by electron transit-time resonance in momentum and real spaces under optical phonon emission are analyzed for nitride-based materials and their structures. It is shown that such a mechanism provides a unique possibility to realize sub-THz and THz radiation generation at the border between the elect...
Article
Full-text available
Using a self-consistent Monte Carlo simulator we investigate the spectrum of voltage fluctuations of an n-type InGaAs two-terminal layer of variable thickness W in the range 1-100 nm and variable length L in the range 0.01-10 µm embedded in an external dielectric medium. Calculations are performed at T = 300 K for different dopings and in the prese...
Article
By numerical simulations we investigate the dispersion of the plasma frequency in a n-type In0.53Ga0.47As layer of thickness W and submicron length at T = 300 K. For W = 100 nm and carrier concentrations of 1016–1018 cm−3 the results are in good agreement with the standard three-dimensional (3D) expression of the plasma frequency. For W ⩽ 10 nm the...
Article
We investigate the dispersion of the plasma frequency associated with the free carriers in a InGaAs layer of length L in the range 0.1-1 μm as a function of the thickness W and carrier concentration at thermal equilibrium T = 300 K. To this purpose we use a Monte Carlo simulator coupled with a two dimensional Poisson solver. To take into account th...
Article
Full-text available
We develop an analytical model based on a few generalized parameters of bulk materials and two-dimensional (2D) structures which enables us to analyze the main features of terahertz (THz) radiation generation caused by optical-phonon transit-time resonance. In the framework of such a model and direct Monte Carlo simulations it is shown that for the...
Article
To analyze the main features of THz radiation generation caused by optical-phonon transit-time resonance a simplified analytical model is developed in terms of some generalized parameters of bulk materials and 2D structures. In the framework of such a model and direct Monte Carlo simulations an increase up to 5 times of the cutoff frequency for THz...
Conference Paper
Nanometric InGaAs-based High Electron Mobility Transistors (HEMTs) have been shown experimentally to generate and detect THz radiation. The observed phenomena can be attributed to the presence of plasma waves inside the transistor channel. To investigate these oscillations we have performed Monte Carlo simulations of InGaAs homogeneous channels of...
Article
Full-text available
We extend the iterative matrix method for the solution of the Boltzmann transport equation in multi-band semiconductors to the calculation of second order parameters such as correlation functions and the noise temperature. The method allows also the extraction of the diffusion coefficient in each valley. The results for the case of GaAs with two va...
Article
We investigate by means of Monte Carlo simulations the physical processes associated with the emission of TeraHertz radiation in different electronic devices. We analyze four alternative and complementary strategies which seem to be promising candidates to obtain the TeraHertz emission: (1) a nitride maser based on the optical-phonon transit-time r...
Conference Paper
TeraHertz emission from High Electron Mobility Transistors has been recently measured from experiments. The experiments show emission spectra with two peaks in the TeraHertz range: one around 1 THz is sensitive to drain and gate voltages, and another one around 5 THz which is fixed. In order to get physical insight into the microscopic mechanism at...
Article
In this work we investigate, by means of Monte Carlo simulations, the physics of the recently observed emission of THz radiation at low temperature (4.2 K) from InGaAs/InAlAs lattice‐matched high electron mobility transistors, HEMTs. The spectrum of the emitted signal consists of two maxima; the one at lower frequency (around 1 THz) is sensitive to...
Article
We investigate the possibility to suppress the diffusion noise in semiconductor bulk materials by adding to the constant electric field a fluctuating contribution characterized by a gaussian distribution and a characteristic time. The general theory is applied to the specific cases of Si and GaAs and investigated by Monte Carlo simulations. Numeric...
Article
Full-text available
Noise in optoelectronic devices is a critical parameter since it can affect dramatically the quality of target discrimination. In the domain of LWIR atmospherical window photodetection, used in the framework of night-vision applications, mercury-cadmium-telluride is a widely used material. We propose the first kinetic calculation of Hg0.8Cd0.2Te no...
Article
In order to evaluate the capabilities of nanometric Schottky-barrier diodes to generate radiations within the TeraHertz spectrum, we present a Monte Carlo study of current response and noise in such structures under large-signal cyclostationary conditions.

Network

Cited By