Jagannath Panda

Jagannath Panda
Indian Institute of Technology Kharagpur | IIT KGP · Department of Physics & Meteorology

Ph.D

About

36
Publications
5,972
Reads
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212
Citations
Citations since 2017
12 Research Items
192 Citations
201720182019202020212022202301020304050
201720182019202020212022202301020304050
201720182019202020212022202301020304050
201720182019202020212022202301020304050
Additional affiliations
June 2011 - present
Indian Institute of Technology Kharagpur
Position
  • Researcher

Publications

Publications (36)
Article
Full-text available
Understanding the stability and current-carrying capacity of graphene spintronic devices is key to their applications in graphene channel-based spin current sensors, spin-torque oscillators, and potential spin-integrated circuits. However, despite the demonstrated high current densities in exfoliated graphene, the current-carrying capacity of large...
Article
Full-text available
Despite structural and processing-induced imperfections, wafer-scale chemical vapor deposited (CVD) graphene today is commercially available and has emerged as a versatile form that can be readily transferred to desired substrates for various nanoelectronic and spintronic applications. In particular, over the past decade, significant advancements i...
Article
Full-text available
The injection of spin-polarized electrons from a magnetic material into semiconductor is currently one of the foremost challenges in semiconductor spin electronics. Here, we have studied the efficient electrical spin injection and detection from nickel doped Fe 3 O 4 (NFO) into the p-Si having (100) crystal orientation via MgO thin insulating tunne...
Article
Full-text available
Establishing ultimate spin current efficiency in graphene over industry-standard substrates can facilitate research and development exploration of spin current functions and spin sensing. At the same time, it can resolve core issues in spin relaxation physics while addressing the skepticism of graphene's practicality for planar spintronic applicati...
Article
Silicon, a candidate as an abundant-element thermoelectric material for low-temperature thermal energy scavenging applications, generally suffers from rather low thermoelectric efficiency. One viable solution to enhancing the efficiency is to boost the power factor (PF) of amorphous silicon (a-Si) while keeping the thermal conductivity sufficiently...
Article
Full-text available
Graphene, with its excellent electrical, mechanical, and optical properties, has emerged as an exceptional material for flexible and transparent nanoelectronics. Such versatility makes it compelling to find new pathways to lay graphene sheets onto smooth, flexible substrates to create large-scale flexible transparent graphene conductors. Here, we r...
Article
Owing to their unprecedented electronic properties, graphene and two-dimensional (2D) crystals have brought fresh opportunities for advances in planar spintronic devices. Graphene is an ideal medium for spin transport while being an exceptionally resilient material for flexible nanoelectronics. However, these extraordinary traits have never been co...
Preprint
Owing to their unprecedented electronic properties, graphene and two-dimensional (2D) crystals have brought fresh opportunities for advances in planar spintronic devices. Graphene is an ideal medium for spin transport while also being an exceptionally resilient material for flexible electronics. However, these extraordinary traits have never been c...
Article
The low temperature spin accumulation in p-Si using Co2CrAl/SiO2 tunnel junction has been investigated in detail. The heterojunction has been fabricated using electron beam evaporation (EBE) technique. The 3-terminal contacts in Hanle geometry has been made for spin transport measurements. The electrical transport properties have been investigated...
Article
Room temperature spin injection and detection in non-magnetic p-Si semiconductor have been studied in details in our Co2CrAl (CCA)/MgO/p-Si heterojunction. The electrical transport properties have been investigated at different isothermal conditions in the temperature range of 30–300 K. We have found a giant spin accumulation in p-Si semiconductor...
Conference Paper
Spin injection and detection in non magnetic p-Si semiconductor have been studied in details in Co45Ni5Cr25Al25(CNCA)/MgO/p-Si heterojunctionfabricated using Electron Beam Evaporation (EBE) technique. The 3-terminal tunnel contacts in Hanle geometry have been made on the device for transport measurements. The current-voltage characteristics of the...
Conference Paper
The room temperature spin injection and detection in non magnetic p-Si semiconductor have been studied in details in our CoFe2O4 (CFO)/MgO/p-Si heterojunction. The 3-terminal tunnel contacts have been made on the device for transport measurements. The electrical transport properties have been investigated at different isothermal conditions in the t...
Article
Full-text available
In this paper we have reported the synthesis of high quality vertically aligned undoped and Mn-doped ZnO single crystalline nanorods arrays on Si (100) substrates using two steps process, namely, initial slow seed layer formation followed by solution growth employing wet chemical hydrothermal method. The shapes of the as grown single crystalline na...
Article
Full-text available
The observation of giant positive junction magnetoresistance (JMR) in our cobalt ferrite (CFO)/p-Si heterojunction has been reported here. The pulsed laser deposition technique has been used for fabrication of the heterojunction. The junction confirms a very good rectifying magnetic diode like behavior at low temperature, whereas at high temperatur...
Article
The magnetic heterojunction diode has been fabricated by growing Co0.65Zn0.35Fe2O4 (CZFO) on well cleaned p-Si substrate using pulsed laser deposition technique, and its behavior under magnetic field is experimentally studied in details. The magnetic field dependent current-voltage characteristics (I-V) have been studied at different isothermal con...
Article
This work reports the investigation of critical behavior of Co50-xNixCr25Al25 (x = 0 and 5) and magneto caloric effect (MCE) of bulk Co2CrAl full Heusler alloy system. The alloy series of Co50-xNixCr25Al25 (x = 0, 1, 2, 3, 4 and 5) have been prepared using arc melting technique. The magnetic properties of all the samples have been studied in the te...
Article
Full-text available
An experimental study of p-La0.7Ca0.3MnO3/ SrTiO3/n-Si heterostructure in which the LCMO and Si are separated by a thin interfacial SrTiO3 (STO) layer with typical thickness of about 15 nm, has been in situ fabricated with the Pulsed laser deposition technique. The La0.7Ca0.3MnO3 (LCMO) film of about 70 nm has been grown on STO at substrate (n-Si)...
Article
Full-text available
Grain size effect on electronic- and magnto-transport properties of hole doped manganite Pr0.7Sr0.3MnO3 (PSMO) in nanometric dimension has been thoroughly investigated under external magnetic field range from zero to ± 8 Tesla down to 4 K. Metal-insulator transition temperature (Tp) which is observed for all the PSMO nanometric samples, differs fro...
Article
Full-text available
10 at.% Fe doped In2O3 dilute magnetic semiconducting (DMS) nanoparticles are synthesized using low temperature ‘pyrophoric reaction processes’. X-ray diffraction studies at room temperature have revealed single-phase cubic bixbyite structure of the sample. Nano size grain distribution has been observed by FESEM. The recorded temperature dependent...
Article
Full-text available
We have demonstrated here the electrical spin extraction and origin of giant positive junction magnetoresistance (JMR) in our Fe3O4/MgO/n-Si (0 0 1) heterostucture. The heterostructure has been fabricated using pulsed laser deposition technique. The electrical transport properties of this heterostructure have been investigated in the temperature ra...
Article
Full-text available
An experimental study of p-La0.7Ca0.3MnO3/SrTiO3/n-Si heterostructure in which La0.7Ca0.3MnO3 (LCMO) and Si are separated by a thin interfacial SrTiO3 (STO) layer with typical thickness ̃ 15 nm, has been in situ fabricated with the pulsed laser deposition technique. The junction exhibits good rectifying diode like behavior over the temperature rang...
Article
The half metallic ferromagnet Co2CrAl full Huesler alloy was successfully prepared by arc melting process. The electrical and magnetic properties of Co2CrAl alloy have been studied in the temperature range of 5 - 300 K. The ferromagnetic Curie temperature Tc of the same alloy has been observed at 329.8 K. The alloy shows semiconducting like electro...
Article
The zinc doped cobalt ferrite (Co0.65Zn0.35Fe2O4) thin film has been fabricated on n-Si substrate (100) using pulsed laser deposition technique. In this paper, we report the current–voltage characteristics without and with external 6 T magnetic field measured at different temperatures in the range of 10–300 K across the heterojunction (CZFO/n-Si)....
Article
Electronic-and magnetic-transport properties of NiFe 2 O 4 (NFO)–SiO 2 –Si heterojunction fabricated by depositing NFO thin films on silicon substrates with the intermediate native oxide (SiO 2) layer have been investigated in details. The current–voltage (I–V) characteristics across the junction have been recorded in the temperature range of 10–30...
Article
Full-text available
This work presents the junction capacitance–voltage characteristics of highly textured/epitaxial Ni nanoparticle embedded in TiN matrix (TiN(Ni)) metal-insulator-semiconductor TiN(Ni)/SiO2/p-Si (100) heterojunction in the temperature range of 10–300 K. This heterojunction behaves as metal-semiconductor junction with unavoidable leakage through nati...
Article
Full-text available
Metal-semiconductor type junction based on p-type La0.7Sr0.3MnO3 and n-type ZnO, Zn(Fe)O or Zn(Fe,Al)O with different Fe concentrations have been fabricated on (0001) sapphire substrate using pulsed laser deposition technique. While the metal-semiconductor type junction with La0.7Sr0.3MnO3 (LSMO) and ZnO or Zn(Fe)O show very good rectifying behavio...
Article
We investigated the electronic transport, magnetic, and magneto-transport properties of perovskite Pr0.6Sr0.4MnO3 (PSMO) manganite in nanometric grain size modulations in the range of 32-50 nm. Structural property confirms all samples are in single phase well crystallined with Pbnm space group. In the electronic transport nanometric sample shows a...
Article
Highly textured Nanocrystilline nickel dots were embedded in crystalline TiN matrix using pulsed laser deposition technique. The crystalline quality and magnetic properties of these highly textured Ni nanodots were investigated in details. The blocking temperature of the Ni particles are found to be ~190 K. The electrical resistivity (ρ) of these s...
Article
The epitaxial Ni nanoparticles embedded in metallic TiN matrix [TiN(Ni)] on p-type (001) Si heterojunction [TiN(Ni)/(001)p-Si] has been fabricated using pulsed laser deposition technique. The I-V characteriatics of TiN(Ni)/p-Si heterojunction have been studied at different temperatures in the range of 100-300 K. The heterojunction shows reasonabl...
Article
The zinc doped cobalt ferrite (Co0.65Zn0.35Fe2O4) thin film has been fabricated on p-Si substrate (100) using pulsed laser deposition technique. The Current-Voltage characteristics without and with external 6 T magnetic field have been measured at different temperatures in the range of 5-300 K across the junction (CZFO/p-Si). The junction shows goo...
Article
The heterojunction of nanocrystalline Ni nanoparticles embedded in crystalline TiN matrix grown on p-Si substrate exhibits diode like excellent rectifying behavior in the temperature range of 100-300 K. The I-V characteristics with and without external magnetic field have been studied in the temperature range of 100-300 K. The negative junction mag...
Article
Full-text available
The effect of doping of rare earth Pr3+ ion replacing Sm3+ in Sm0.5Sr0.5MnO3 is investigated in details. Measurements of linear and non linear ac magnetic susceptibility, resistivity, magnetoresistance on chemically synthesized (Sm0.5-xPrx)Sr0.5MnO3 shows various interesting features with doping level x=0.15. Here we observe the frequency indepe...
Article
We have fabricated a p‐n junction, consisting of p‐type manganite (LSMO) and n‐type ZnO doped with 5% Fe and 1% Al grown on a sapphire substrate using Pulsed Laser Deposition technique. This heterojunction exhibits diode like behavior in the temperature range of 77‐300 K. The I–V measurements with and without external magnetic field of 0.7 T show r...

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