J. Grzyb

• University of Wuppertal

This letter presents a 206.5–220.5-GHz fundamental differential Colpitts oscillator in a cascode topology implemented in a 130-nm SiGe HBT technology with f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> t </sub>/ f max of 350/450 GHz. Base inductors at the common-base (CB) stages are used to provide...

This work focuses on a systematic analysis of the potential as well as the limitations of modern SiGe HBT devices for broadband passive room-temperature detection in the lower THz range. Multiple necessary conditions need to be fulfilled to facilitate broadband passive imaging with a sufficiently low in-band NEP, which refer to various technology-d...

A broadband three-stage pseudo-differential SiGe-interconnection bipolar transistor (HBT) power amplifier (PA) for high-speed communication at around 300 GHz is presented. The amplifier is fabricated in an experimental 130-nm SiGe BiCMOS technology with an $f_{t}/f_{\max }$ of 470/650 GHz. The use of asymmetric coupled line transformers is propos...

This article presents a comprehensive analysis of the terahertz (THz) rectification process with modern high-speed silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) devices to enable low-power and close-to-optimum detector sensitivity in a near-THz fractional bandwidth. The influence of all major device internal parasitics on the det...

Due to the wide practical use and its availability worldwide, wireless communication has been one of the main applications driving the development of microelectronic technology. This drive will persist in the future, where wireless networks with data rates of 100 Gb/s are already envisioned by the new IEEE 802.15.3d-2017 standard. Currently, the ma...

A highly integrated fundamentally operated direct-conversion quadrature (IQ) TX/RX chipset with a tunable carrier of 215–240 GHz for high-speed wireless communication is presented. The TX/RX front-ends are fabricated in the 0.13- $\mu \text{m}$ SiGe HBT technology and combined with wire-bonded chip-on-board (COB) packaging for high-speed baseband...

Arrays of terahertz (THz) sources provide a pathway to overcoming the radiation power limitations of single sources. Several independent sources of THz radiation may be implemented in a single integrated circuit, thereby realizing a monolithic THz source array of high output power. Integrated THz sources must generally be backside-coupled to extend...

This article presents the concept of a lens-integrated CMOS camera-type terahertz (THz) compact antenna test range (CATR) to determine the far-field characteristics of transmitters (TX), including the radiation pattern, directivity, half-power beam-width (HPBW), and radiation power. For concept validation, the frequency-dependent far-field radiatio...

In this article, we present a comprehensive study to understand the image formation and associated resolution limitations of hyper-hemispherical high-resistivity floating-zone silicon (HRFZ-Si) lens-integrated terahertz (THz) cameras, and we extend this understanding into THz super-resolution imaging applications. Along these lines, design tradeoff...

This article presents a terahertz (THz) source system-on-a-chip (SoC) specifically designed for computational imaging with a single-pixel camera (SPC). The SoC consists of an $8\times 8$ array of independent, frequency-unlocked THz sources that together radiate maximum 10.3-dBm power at 0.42 THz. Each source pixel is composed of a fundamental Col...

In the above article [1] , errors occurred in [15] and the biographies of Ullrich Pfeiffer and Janusz Grzyb. The correction information is provided as follows.

In this article, a polarization-diversity technique multiple-input multiple-output (MIMO) is demonstrated to double the spectral efficiency of a line-of-sight quadrature phase-shift keying (QPSK) wireless link at 220-255 GHz with a pair of highly integrated single-chip transmitter (TX) and receiver (RX) front-end modules in 0.13-μm SiGe HBT technol...

In this work, a silicon lens-coupled dual-polarization on-chip ring antenna for THz direct detection in 0.13-μm SiGe HBT technology is presented. In particular, various circuit-antenna co-design aspects are addressed, including the detector frequency-dependent driving impedance and responsivity, and the necessity of accommodating multiple DC signal...

This letter presents a 1-m wireless link established with a set of fundamentally operated Tx/Rx direct-conversion in-phase and quadrature (IQ) radio frequency (RF) front-end modules in a 0.13-μm SiGe HBT technology featuring full chip-on-board packaging. Using a 16-quadrature amplitude modulation, data rates from 20 to 100 Gb/s with an error vector...

Traditional THz equipment faces major obstacles in providing the system cost and compactness necessary for widespread deployment of THz applications. Because of this, the field of THz integrated circuit (THz IC) design in CMOS and SiGe HBT technologies has surged in the last decade. An interplay of advances in silicon process technology, design tec...

This paper presents a fully integrated system-on-a-chip for real-time terahertz super-resolution near-field imaging. The chip consists of 128 sensing pixels with individual cross-bridged double 3-D split-ring resonators arranged in a 3.2 mm long $2\times 64$ 1-D array. It is implemented in 0.13- $\mu \text{m}$ SiGe bipolar complementary metal–oxi...

The failure to accurately define tumor margins during breast conserving surgery (BCS) results in a 20% re-excision rate. The present paper reports the investigation to evaluate the potential of terahertz imaging for breast tissue recognition within the under-explored 300 – 600 GHz range. Such a frequency window matches new BiCMOS technology capabil...

This paper presents a fully-integrated direct-conversion fundamentally-operated mixer-first quadrature receiver module with a tunable LO in the 219–266 GHz band. It has been implemented in a 0.13-μm SiGe heterojunction bipolar transistor technology. It includes an on-chip LO path driven externally from the printed circuit board (PCB) connector leve...

Breast Cancer is one of the most frequently diagnosed cancer diseases worldwide, and the most common invasive tumour for women. As with all cancers, early detection plays a major role in reducing the mortality and morbidity rate. Currently, most breast cancers are detected due to clinical symptoms, or by screening mammography. The limitations of th...

This paper presents a fully-integrated direct-conversion quadrature transmitter and receiver implemented in a SiGe HBT technology with fT/fmax=350/550 GHz working at a carrier frequency of 240 GHz. The transmitter has a 3-dB RF/LO bandwidth of 35 GHz with a peak output power of 8.5 dBm, while the receiver presents 22 GHz of RF/LO 3-dB bandwidth wit...

Terahertz (THz) imaging and tomography are modern imaging techniques allowing 2D and 3D inspection of objects over a broadband frequency range. However, the transfer of this technique to medical applications is limited to surface or subsurface inspection due to the large concentration of water molecules which are an intrinsic characteristic of biol...

Breaking through diffraction limit at terahertz frequencies is currently performed with the near-field scanning optical microscopy, which suffers from low integration and sensitivity limitations. In this paper, a solid-state superresolution imaging device in 130-nm SiGe BiCMOS technology operating around 534-562 GHz is presented. The device exhibit...

This paper reports on the research activities during the first phase of the project Real100G.RF, which is part of the German Research Foundation (DFG) priority programm SPP1655. The project’s main objective is to research silicon-based wireless communication above 200 GHz to enable data rates in excess of 100 gigabit per second (Gbps). To that end,...

This paper presents a room-temperature operating superresolution terahertz (THz) planar near-field solid-state sensor breaking the diffraction limit. Contrary to classical superresolution imagers implemented in the optical domain, the sensor features inbuilt illumination, evanescent-field sensing, and detection on a single chip, eliminating the nee...

A complete circularly polarized 210–270-GHz frequency-modulated continuous-wave radar with a monostatic homodyne architecture is presented. It consists of a highly integrated radio-frequency transceiver module, an in-house developed linear-frequency chirp generator, and a data acquisition chain. The radar front end featuring a fundamentally operate...

A 3-D high-resolution imaging with a highly-integrated FMCW circularly-polarized monostatic homodyne radar implemented in 0.1μm SiGe HBT technology and operating in the 240GHz transmission window is presented. To address high packaging costs of THz imagers, the radar frontend is realized as a single chip with a silicon lens-integrated on-chip anten...

We demonstrate a 0.55 THz near-field sensor implemented in 0.13 μm SiGe HBT technology from IHP Microelectronics. The sensor utilizes a differential split-ring resonator for evanescent field sensing and on-chip illumination and detection circuitry to enable future large scale sensor array implementations. It provides a dielectric permitivity depend...

Light-field imaging is a highly versatile computational method that has been traditionally limited to the visible frequency range of the electromagnetic spectrum. This paper presents an implementation of the light-field technique in terahertz (THz) radiation for the first time. A silicon hyper-hemispherical lens-integrated 32 ×32 pixel CMOS camera...

The main scope of this paper is to address various implementation aspects of THz detector arrays in the nanoscale silicon technologies operating at room temperatures. This includes the operation of single detectors, detectors operated in parallel (arrays), and arrays of detectors operated in a video-camera mode with an internal reset to support con...

In this paper, we present a comprehensive study on the operation of an antenna-coupled THz bolometer based on a micro-machined SOI-CMOS thermal sensor. The pixels are designed to operate at room temperature in vacuum. We focus on a new planar skirt antenna, which combines high sensitivity within a 0.6–1.2 THz band and 30 ° HPBW. We present an overv...

This paper reports on the design of a broadband lensintegrated differentially-driven circular slot on-chip antenna for a 240 GHz power source implemented in a SiGe HBT technology. The circular slot is excited by 2 sectorial patch probes located in the antenna aperture, whereby the mutual coupling between them is exploited to extend the antenna oper...

A 240-GHz monostatic circular polarized SiGe frequency-modulated continuous wave radar system based on a transceiver chip with a single on-chip antenna is presented. The radar transceiver front-end is implemented in a low-cost 0.13 µm SiGe HBT technology version with cut-off frequencies fT/fmax of 300/450 GHz. The transmit block comprises a wideban...

This paper presents the concept and implementation of an active all-electronic terahertz multi-color imager with the functionality demonstrated in the frequency range of 160 GHz-1 THz. The proposed terahertz system is realized in the form of two independent highly integrated low-cost transmitter (Tx) and receiver (Rx) modules. Each module consists...

This paper presents a fully integrated direct-conversion quadrature transmitter and receiver chipset at 240 GHz. It is implemented in a 0.13- μm SiGe bipolar-CMOS technology. A wideband frequency multiplier (×16) based local-oscillator (LO) signal source and a wideband on-chip antenna designed to be used with an external replaceable silicon lens ma...

This paper presents a high-power 0.53 THz source module with programmable diversity to adjust the brightness and the direction of light to obtain the desired diffuse lighting conditions in THz imaging applications. The source module consists of a single SiGe BiCMOS chip which operates an array of 16 source-pixel incoherently. Each source pixel cons...

Two different types of innovative all-silicon integrated THz harmonic source and receiver components potentially enabling new THz active imaging modalities are introduced. The first consists of a multiplier-chain based power source and a harmonic heterodyne 2×2 receiver array; both operating simultaneously at multiple harmonics in the 160-1000 GHz...

This paper presents recent developments on transmitter and receiver circuit in advanced SiGe technologies for emerging applications in the sub-millimeter wave region of the electromagnetic spectrum. This includes high-power harmonic oscillators, multiplier chains, and heterodyne I/Q transmitters for terahertz signal generation, as well as direct de...

This paper summarizes state-of-the-art terahertz detectors and sources in silicon technologies for terahertz imaging applications beyond 0.3 THz. It reviews ongoing research on a compact solution for handheld terahertz imaging applications.

This paper reports on the design of a compact wire ring on-chip antenna system for a spatial power combining single-chip transmitter at 820 GHz implemented in 0.25μm SiGe HBT technology. The array with a 2×2 arrangement illuminating a hyper-hemispherical silicon lens through the chip backside is driven by 4 parallel on-chip multiplier chains and is...

Todays terahertz instrumentation lacks cost-effective sources and detectors compatible with standard microelectronics to drive down the system cost. This paper presents recent developments based on silicon process technologies and discusses the challenges in implementing source and detectors. It presents a 530GHz source array with up to 1mW radiate...

This paper reports on design of differentially driven lens-integrated on-chip ring antennas with harmonic filtering for both CMOS and SiGe HBT highly integrated mm-wave and THz N-push oscillators. Two state-of-the-art circuit/ antenna co-design examples of high-power sources are presented: at 288 GHz in 65nm CMOS technology and at 530 GHz in 0.13μm...

n° de priorité : FR20120058572 20120912 ; également publié en tant que : US2014070893 (A1) 2014-03-13

n° de priorité : FR20120058573 20120912 ; également publié en tant que : US2014070103 (A1) 2014-03-13