Ihor Zadorozhnyi

Ihor Zadorozhnyi
Forschungszentrum Jülich · Peter Grünberg Institute (PGI)

Doctor of Philosophy

About

24
Publications
3,689
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197
Citations
Citations since 2016
22 Research Items
197 Citations
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201620172018201920202021202201020304050
201620172018201920202021202201020304050

Publications

Publications (24)
Preprint
Full-text available
The combination of graphene with silicon in hybrid devices has attracted attention extensively over the last decade. Most of such devices were proposed for photonics and radiofrequency applications. In this work, we present a unique technology of graphene-on-silicon heterostructures and their properties as solution-gated transistors. The graphene-o...
Article
Full-text available
In small‐area transistors, the trapping/detrapping of charge carriers to/from a single trap located in the gate oxide near the Si/SiO2 interface leads to the discrete switching of the transistor drain current, known as single‐trap phenomena (STP), resulting in random telegraph signals. Utilizing the STP‐approach, liquid‐gated (LG) nanowire (NW) fie...
Article
Full-text available
Transistor biosensors are mass-fabrication-compatible devices of interest for point of care diagnosis as well as molecular interaction studies. While the actual transistor gates in processors reach the sub-10 nm range for optimum integration and power consumption, studies on design rules for the signal-to-noise ratio (S/N) optimization in transisto...
Article
Full-text available
Numerous sensitive nanobiosensors are reported for various bioassay applications as a result of the development of materials science and nanotechnology. Among these sensors, nanowire (NW) field‐effect transistors (FETs) represent one of the most promising practical biosensors for ultrasensitive clinical diagnostic tools. Most studies mainly focus o...
Article
C-reactive protein (CRP) and cardiac troponin I (cTnI) biomolecules represent the earliest enzymes that appear in the blood when a cardiac injury occurs. Real-time and selective detection of these biomarkers is essential for the prediction and detection of cardiovascular diseases at an early stage. Here we report on the label-free specific detectio...
Article
Silicon nanowires (Si NWs) represent the most promising candidates for recording biological signals due to improved interfacing properties with cells and the possibility of high-speed transduction of biochemical signals into detectable electrical responses. The recording of extracellular action potentials (APs) from cardiac cells is important for f...
Article
Full-text available
InAs nanowires (NWs) are recognized as a key material due to their unique transport properties. Despite remarkable progress in designing InAs NW device structures, there are still open questions on device variability. Here, we demonstrate that noise spectroscopy allows us to study not only the parameters of traps, but also to shed light on quantum...
Article
Silicon two‐layer (TL) nanowire (NW) field‐effect transistors (FETs) are fabricated by applying a CMOS‐compatible top‐down approach to silicon on insulator (SOI) wafers with additionally epitaxially grown silicon layers. Transport and noise properties of fabricated structures with p‐type conductivity are studied in a wide temperature range (100–300...
Article
We fabricate two-layer (TL) silicon nanowires (NW) field-effect transistors (FETs) with a liquid gate. The NW devices show advanced characteristics, which reflect reliable single-electron phenomena. A strong modulation effect of channel conductivity with effectively tuned parameters is revealed. The effect opens up prospects for applications in sev...
Conference Paper
We fabricated new types of nanowires that consist of two silicon layers with different doping concentrations. Fabricated structures demonstrate pronounced random telegraph signal fluctuations as a result of single electron dynamic processes. Liquid-gated nanowire transistor devices show advanced characteristics favorable for a new sensing approach...
Article
Full-text available
Silicon nanowire (NW) field-effect transistor (FET) sensors of various lengths were fabricated. Transport properties of Si NW FET sensors were investigated involving noise spectroscopy and current-voltage (I-V) characterization. The static I-V dependencies demonstrate the high quality of fabricated silicon FETs without leakage current. Transport an...
Article
Liquid-gated Si nanowire (NW) field-effect transistor (FET) biosensors are fabricated using a CMOS-compatible top-down approach. The transport and noise properties of the devices reflect the high performance of the FET structures, which allows label-free detection of cardiac troponin I (cTnI) molecules. Moreover, after removing the troponin antigen...
Article
Full-text available
In the present study, transport properties and single trap phenomena in silicon nanowire (NW) field-effect transistors (FETs) are reported. The dynamic behavior of drain current in NW FETs studied before and after gamma radiation treatment deviates from the predictions of the Shockley–Read–Hall model and is explained by the concept taking into acco...
Conference Paper
Full-text available
unctionless p+-p-p+ silicon nanowire (NW) field-effect transistors with various geometries were fabricated. Noise measurements were performed for the samples with different widths and in different operation modes. Results demonstrate significant changes in noise and Hooge parameter when the NW geometry is changed. The dependences obtained can be ex...
Article
We studied space charge distribution phenomena in planar GaN nanowires and nanoribbons (NRs). The results obtained at low voltages demonstrate that the electron concentration changes not only at the edges of the nanoribbon, but also in the middle part of the nanoribbon. The effect is stronger with decreasing nanoribbon width. Moreover, the spatial...
Article
Nanowires (NWs) have recently emerged as a new class of materials demonstrating unique properties which may completely differ from their bulk counterparts. The main aim of this work is to give an overview of results on noise and fluctuation phenomena in NW-based structures. We emphasize that noise is one of the main parameters, which determines the...
Article
Full-text available
Recording extracellular potentials from electrogenic cells (especially neurons) is the hallmark destination of modern bioelectronics. While fabrication of flexible and biocompatible in vivo devices via silicon technology is complicated and time-consuming, graphene field-effect transistors (GFETs), instead, can easily be fabricated on flexible and b...
Article
A pH sensor with a double-gate silicon nanowire field-effect transistor Appl. Phys. Lett. 102, 083701 (2013); 10.1063/1.4793655 Theory of signal and noise in double-gated nanoscale electronic pH sensors The transport, noise, and photosensitivity properties of an array of silicon nanowire (NW) p þ-p-p þ field-effect transistors (FETs) are investigat...
Article
Here we report on the effect of gamma radiation treatment on transport properties and single-trap kinetics in Si nanowire (NW) field effect transistor (FET) structures. We used noise spectroscopy as a powerful method for advanced physical characterization of nanoscale devices. Our results demonstrate that transport properties of NW FETs can be chan...
Conference Paper
We present results of a comprehensive study of the liquid-back gate coupling effect in our Si nanowire (NW) field-effect transistor (FET) structures using noise spectroscopy in different operation modes, including variable back-gate voltage. The constant channel resistance regime was used for measurements of the transport and noise properties of th...
Article
Full-text available
The basic reason for enhanced electron capture time, τ c , of the oxide single trap dependence on drain current in the linear operation regime of p+-p-p+ silicon field effect transistors (FETs) was established, using a quantum-mechanical approach. A strong increase of τ c slope dependence on channel current is explained using quantization a...

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