Ian Stobert

Ian Stobert
GlobalFoundries Inc.

About

30
Publications
9,048
Reads
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318
Citations
Citations since 2016
4 Research Items
182 Citations
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201620172018201920202021202201020304050
201620172018201920202021202201020304050
201620172018201920202021202201020304050

Publications

Publications (30)
Conference Paper
We review recent progress in loss reduction of Si and SiN waveguides in GLOBALFOUNDRIES 300mm monolithic Si photonics platform. Primary challenges to creating low-loss CMOS integrated photonic components are highlighted and potential solutions are outlined.
Article
A competitive 300mm silicon photonics foundry technology has been developed by GLOBALFOUNDRIES for general availability which takes advantage of advanced CMOS process technology and provides manufacturing scale. A state-of-art process design kit offers a co-design environment with access to a comprehensive photonics device library along with a mono...
Conference Paper
Full-text available
Extreme ultraviolet lithography (EUV) advances printability of small size features for both memory and logic semiconductor devices. It promises to bring relief to the semiconductor manufacturing industry, removing the need for multiple masks in rendering a single design layer on wafer. However, EUV also brings new challenges, one of which is of mas...
Patent
Full-text available
In various embodiments, a method of designing an integrated circuit (IC) layout for a multiple patterning layout fill process includes: providing a pre-characterized mask tile library including a plurality of distinct mask tiles each having a distinct mask density on a plurality of distinct exposures each associated with a patterning process in the...
Conference Paper
Full-text available
To prevent catastrophic failures during wafer manufacturing, mask manufacturers employ sophisticated reticle inspection systems to examine every image on every reticle to identify defects. These advanced systems inspect at resolutions typically 3x higher at the reticle-plane than advanced wafer scanners; thus enabling them to detect the small defec...
Conference Paper
Various forms of Optical Proximity Correction (OPC) have been employed for over twenty years to address local lithographic printing effects. As lithography modeling capabilities have improved, so too have the sophistication and complexity of OPC solutions. In the same time frame, there have been advances in etch modeling capabilities, but the compl...
Article
As 193 nm immersion lithography is extended indefinitely to sustain technology roadmaps, there is increasing pressure to contain escalating lithography costs by identifying patterning solutions that can minimize the use of multiple-pass processes. Contact patterning for the 32/28 nm technology nodes has been greatly facilitated by just-in-time intr...
Article
As 193 nm immersion lithography is extended indefinitely to sustain technology roadmaps, there is increasing pressure to contain escalating lithography costs by identifying patterning solutions that can minimize the use of multiple-pass processes. Contact patterning for the 32/28 nm technology nodes has been greatly facilitated by just-in-time intr...
Article
Implant level photolithography processes are becoming more challenging each node due to everdecreasing CD and resist edge placement requirements, and the technical challenge is exacerbated by the business need to develop and maintain low-cost processes. Optical Proximity Correction (OPC) using models created based on data from plain silicon substra...
Article
The ever shrinking lithography process window requires us to maximize our process window and minimize tool-induced process variation, and also to quantify the disturbances to an imaging process caused upstream of the imaging step. Relevant factors include across-wafer and wafer-to-wafer film thickness variation, wafer flatness, wafer edge effects,...
Article
Full-text available
As the industry progresses toward more challenging patterning nodes with tighter error budgets and weaker process windows, it is becoming clear that current single process condition Optical Proximity Corrections (OPC) as well as OPC verification methods such as Optical Rules Checking (ORC) performed at a single process point fail to provide robust...
Article
We present an etch-aware optical proximity correction (OPC) flow that is intended to optimize post-etch patterns on wafer. We take advantage of resource efficient empirical etch models and a model based retargeting scheme to determine post-develop in-plane resist targets required to achieve post-etch critical dimensions. The goal of this flow is to...
Article
Full-text available
Cost and complexity associated with OPC and masks are rapidly increasing to the point that they could limit technology scaling in the future. This paper focuses on demonstrating the advantages of regular design fabrics for OPC simplification to enable scaling and minimize costs for technologies currently in volume production. The application of suc...
Article
Models Based Optical Proximity Correction (MBOPC) is used extensively in the semiconductor industry to achieve robust pattern fidelity in modern lithographic processes. Much of the complexity in OPC algorithms is handled by advanced commercial software packages. These packages give users the ability to set many parameters in the OPC code decks whic...
Article
Photomask pattern sizes are usually defined by a one-dimensional Critical Dimension (CD). As mask pattern shapes become more complex, a single CD no longer provides sufficient information to characterize the mask feature. For simple square contacts, an area measurement is generally accepted as a better choice for determining contact uniformity. How...
Article
When you are using optical proximity correction (OPC) to optimize contacts and vias, the obvious solution is not always the correct solution.
Article
Full-text available
The lithographic processes and resolution enhancement techniques (RET) needed to achieve pattern fidelity are becoming more complicated as the required critical dimensions (CDs) shrink. For technology nodes with smaller devices and tolerances, more complex models and proximity corrections are needed and these significantly increase the computationa...
Article
In the course of using Optical Proximity Correction (OPC) to optimize contact printing, the obvious solution is not always the correct solution. This paper will explore two different types of contact layers, with two different sets of objectives. In the first type of contact layer, the primary objective is to achieve consistent area uniformity. For...
Article
Model based optical proximity correction (MB-OPC) is essential for the production of advanced integrated circuits (ICs). As the speed and functionality requirements of IC production necessitate continual reduction of the critical dimension (CD), there is a heightened demand for more accurate and sophisticated OPC models. The OPC is applied to the d...
Article
Optical Proximity Correction (OPC) relies on predictive modeling to achieve consistent wafer results. To that end, understanding all sources of variation is essential to the successful implementation of OPC. This paper focuses on challenging SRAM layouts of contacts to study the sources of wafer variation. A range of shape geometries and contact co...
Article
Full-text available
The application of aggressive optical proximity correction (OPC) has permitted the extension of advanced lithographic technologies. OPC is also the source of challenges for the mask-maker. Sub-resolution features, small shapes between features and highly-fragmented edges in the design data are difficult to reproduce on masks and even more difficult...
Article
One of the challenges associated with shrinking design dimensions is finding photomask inspection settings which achieve sufficient defect detection capabilities while supporting aggressive Optical Proximity Correction (OPC). The most recent technology nodes require very aggressive and advanced Resolution Enhancement Techniques (RETs) which involve...
Article
The transition to the 65nm technology node requires improved methodologies for model based optical proximity correction. The approaches used for previous generations might not be able to deliver the high accuracy which is necessary for gate patterning on high performance or low leakage circuits. A new categorization scheme for OPC fragments will be...
Article
Current state-of-the-art OPC (optical proximity correction) for 2-dimensional features consists of optimized fragmentation followed by site simulation and subsequent iterations to adjust fragment locations and minimize edge placement error (EPE). Internal and external constraints have historically been available in production quality code to limit...
Article
A surface is a compact, connected, Hausdorff space that is locally homeomorphic to IR 2 . A spine is a topological-minimal embedding of a graph in a surface Sigma with exactly one face which is an open two-cell. This face can be thought of as a polygon which represents Sigma as an identification map. In this thesis, we give a method for finding all...
Article
Thesis (M.S.)--University of Vermont, 1997. Includes bibliographical references (leaf 50).
Article
We prove that the crossing number of C5 × Cn is 3n, which is consistent with the general conjecture that the crossing number of Cm × Cn is (m − 2)n, for 3 ≤ m ≤ n. © 1996 John Wiley & Sons, Inc.

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