Iacopo Mochi

Iacopo Mochi
Paul Scherrer Institut | PSI · Laboratory of Micro and Nanotechnology (LMN)

PhD

About

137
Publications
21,976
Reads
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1,133
Citations
Additional affiliations
April 2016 - present
Paul Scherrer Institut
Position
  • Staff Scientitst
January 2015 - March 2016
imec
Position
  • Engineer
May 2008 - September 2013
Lawrence Berkeley National Laboratory
Position
  • Researcher

Publications

Publications (137)
Conference Paper
Actinic EUV mask metrology is essentially needed for EUV lithography in the semiconductor device manufacturing process. At PSI, we are developing RESCAN, a coherent diffractive imaging (CDI)-based platform that can meet current and future mask inspection resolution requirements. In CDI, the diffraction patterns obtained by illuminating the sample w...
Presentation
Actinic EUV mask metrology is essentially needed for EUV lithography in the semiconductor device manufacturing process. At PSI, we are developing RESCAN, a coherent diffractive imaging (CDI)-based platform that can meet current and future mask inspection resolution requirements. In CDI, the diffraction patterns obtained by illuminating the sample w...
Article
Extreme Ultraviolet lithography (EUVL) is the current technology used in the semiconductor industry for the fabrication of integrated circuits (ICs), since it enables the further miniaturization of their components. For its optimal operation, photoresist materials that can efficiently use EUV photons (92 eV) to yield sub-10 nm patterns are required...
Article
One of the challenges for extreme ultraviolet (EUV) lithography is the mitigation of mask three-dimensional effects arising from the oblique incident angle and the mask topography. As the scanners' numerical aperture and the pattern aspect ratio increase, these effects become more prominent. A potential solution to reduce them consists in replacing...
Conference Paper
Full-text available
Progress in EUV resists towards high-NA EUV lithography Xiaolong Wang1 , Zuhal Tasdemir1, Iacopo Mochi1, Lidia van Lent-Protasova2, Marieke Meeuwissen2, Rolf Custers2, Gijsbert Rispens2, Rik Hoefnagels2, Yasin Ekinci1 1Laboratory for Micro- and Nanotechnology, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland 2ASML Netherlands B.V., De Run...
Article
The purpose of EUV pellicles is to protect the surface of EUV lithography masks from particle contamination. It is important to ensure that the optical characteristics of the pellicle membrane do not critically affect the reticle image quality. Aim: We want to verify the possibility to integrate pellicle inspection and characterization capabilities...
Article
Full-text available
The extension of transient grating spectroscopy to the x-ray regime will create numerous opportunities, ranging from the study of thermal transport in the ballistic regime to charge, spin, and energy transfer processes with atomic spatial and femtosecond temporal resolution. Studies involving complicated split-and-delay lines have not yet been succ...
Article
Full-text available
Extreme ultraviolet interference lithography (EUV-IL) is a relatively simple and inexpensive technique that can pattern high-resolution line/space and has been successfully used for the resist performance testing. While the aerial image in EUV-IL formed by two beams is straightforward to understand and has contrast of 1, the aerial image formed by...
Conference Paper
Full-text available
Abstract. Extreme ultraviolet interference lithography (EUV-IL) is a relatively simple and inexpensive technique that can pattern high-resolution line/space and has been successfully used for the resist performance testing. While the aerial image in EUV-IL formed by two beams is straightforward to understand and has contrast of 1, the aerial image...
Article
Extreme ultraviolet interference lithography (EUV-IL) is used to manufacture topographical guiding patterns to direct the self-assembly of block copolymers. High-accuracy silicon oxide-like patterns with trenches ranging from 68 nm to 117 nm width are fabricated by exposing a hydrogen silsesquioxane (HSQ) resist layer using EUV-IL. We investigate h...
Article
Full-text available
While the industrial implementation of extreme ultraviolet lithography for upcoming technology nodes is becoming ever more realistic, a number of challenges have yet to be overcome. Among them is the need for actinic mask inspection. We report on reflective-mode lensless imaging of a patterned multi-layer mask sample at extreme ultraviolet waveleng...
Article
Full-text available
The paradigm shift of the semiconductor industry moving from deep ultraviolet to extreme ultraviolet lithography (EUVL) brought about new challenges in the fabrication of illumination and projection optics, which constitute one of the core sources of cost of ownership for many of the metrology tools needed in the lithography process. For this reaso...
Article
Pattern transfer by deep anisotropic etch is a well-established technique for fabrication of nanoscale devices and structures. For this technique to be effective, the resist material plays a key role and must have high resolution, reasonable sensitivity and high etch selectivity against the conventional silicon substrate or underlayer film. In this...
Article
Actinic mask defect inspection is an essential process step for the implementation of extreme ultraviolet (EUV) lithography in high-volume manufacturing. The main challenges for any mask defect inspection platform are resolution, sensitivity, and throughput. The reflective-mode EUV mask scanning lensless imaging microscope (RESCAN) is being develop...
Conference Paper
Assist features are commonly used in DUV lithography to improve the lithographic process window of isolated features under illumination conditions that enable the printability of dense features. With the introduction of EUV lithography, the interaction between 13.5 nm light and the mask features generates strong mask 3D effects. On wafer, the mask...
Article
Several wavefront sensing techniques provide direct or indirect measurements of the wavefront error gradient, for example the Shack–Hartmann sensor, the Foucault knife-edge test, shearing interferometry, and many others. We developed and tested a noniterative method to reconstruct the wavefront error from its gradient. The method is based on the pr...
Article
Full-text available
Since completely defect-free masks will be hard to achieve, it is essential to have a good understanding of the printability of the native extreme ultraviolet (EUV) mask defects. In this work, we performed a systematic study of native mask defects to understand the defect printability they cause. The multilayer growth over native substrate mask bla...
Article
Full-text available
The availability of defect-free masks is considered to be a critical issue for enabling extreme ultraviolet lithography (EUVL) as the next generation technology. Since completely defect-free masks will be hard to achieve, it is essential to have a good understanding of the printability of EUV mask defects. In this work, two native mask blank defect...
Article
The wavefront retrieval by gradient descent algorithm that is typically applied to coherent or incoherent imaging is extended to retrieve a wavefront from a series of through-focus images by partially coherent illumination. For accurate retrieval, we modeled partial coherence as well as object transmittance into the gradient descent algorithm. Howe...
Conference Paper
Full-text available
The SEMATECH High Numerical Aperture Actinic Reticle Review Project (SHARP) is a synchrotron-based extreme ultraviolet (EUV) microscope dedicated to photomask research. SHARP has been operational and serving users since June, 2013, and in eight months, SHARP has recorded over 71,000 high-resolution images. Exposure times are 5 to 8 seconds, and 8 o...
Article
Full-text available
The inner disk of the Galaxy has a number of young star clusters dominated by red supergiants that are heavily obscured by dust extinction and observable only at infrared wavelengths. These clusters are important tracers of the recent star formation and chemical enrichment history in the inner Galaxy. During the technical commissioning and as a fir...
Conference Paper
Roughness in EUV masks can be induced at the substrate or during the deposition process in the multilayer, and this roughness causes speckle when the mask is used for imaging. The 13.5-nm wavelength light penetrates into the multilayer and interacts mostly with the roughness that is replicated through the multilayer. AFM measurements of the substra...
Conference Paper
The SEMATECH High Numerical Aperture Actinic Reticle Review Project (SHARP) is a newly commissioned, synchrotron-based extreme ultraviolet (EUV) microscope dedicated to photomask research. SHARP offers several major advances including objective lenses with 4xNA values from 0.25 to 0.625, flexible, lossless coherence control through a Fourier-synthe...
Conference Paper
The authors are extending the capabilities of the SHARP microscope (SEMATECH High-NA Actinic Reticle review Project) by implementing wave front coding as a complementary imaging mode. SHARP, using a single off-axis lens has a tilted focal plane, reducing the instrument’s field of view to a few micrometers. Wave-front coding increases the depth of f...
Conference Paper
We are investigating the effect of pupil-fill patterns and partial coherence settings on EUV reticle images on the new SEMATECH High-NA Actinic Reticle review Project (SHARP), to deepen our understanding of its performance, and improve the emulation of image formation in arbitrary printing tools. SHARP is an EUV mask microscope developed as the suc...
Article
Full-text available
The tables lists the OH airglow line wavelengths and relative photon fluxes (Table 1) and the wavelengths and relative photon fluxes of other airglow lines (Table 3), measured in the Near-Infrared with the echelle spectrometer GIANO at the Telescopio Nazionale Galileo. The intensities of the lines (flux) are expressed in units of photons/cm2/s, nor...
Article
Full-text available
A flux-calibrated high resolution spectrum of the airglow emission is a practical lambda-calibration reference for astronomical spectral observations. It is also useful for constraining the molecular parameters of the OH molecule and the physical conditions in the upper mesosphere. methods: We use the data collected during the first technical commi...
Article
Broadly applicable, in situ at-wavelength metrology methods for x-ray optics are currently under development at the Advanced Light Source. We demonstrate the use of quantitative wavefront feedback from a lateral shearing interferometer for the suppression of aberrations. With the high sensitivity provided by the interferometer we were able to optim...
Conference Paper
Full-text available
Both 90.9° and 180° phase shifts have been achieved using a new Phase Shift Mask (PSM) structure. This PSM is intended for use as a focus monitor. Both the EUV images of the focus monitor patterns on the new EUV PSM test mask, obtained from the SEMATECH/Berkeley Actinic Inspection Microscope (AIT), and the SEMATECH EUV Micro Exposure Tool (MET), sh...
Conference Paper
The SEMATECH High-NA Actinic Reticle review Project (SHARP) is a synchrotron-based, EUV-wavelength microscope, dedicated to photomask imaging, now being commissioned at Lawrence Berkeley National Laboratory. In terms of throughput, resolution, coherence control, stability and ease of use, SHARP represents a significant advance over its predecessor,...
Article
Full-text available
GIANO is a high resolution (R50,000) IR spectrograph which provides a quasi-complete coverage of the 0.95- 2.5μm wavelengths range in a single exposure. The instrument was integrated and tested in Arcetri-INAF (Florence, Italy) and will be commisioned at the 3.58m TNG Italian telescope in La Palma. The major scientific goals include the search for...
Article
Extreme Ultraviolet Lithography (EUVL) embedded phase shift mask (EPSM) can further extend lithography resolution limit and provide better pattern fidelity as compared to that of EUVL binary mask for 16nm node technology and beyond generations. In our previous study, we have demonstrated in wafer printing that EUVL EPSM can provide improved process...