I. V. Ivonin

Tomsk State University · Department of Semiconductor Physics

Using AFM methods in air under normal conditions in a wide range of local force effects ([Formula: see text]< 40 μN) the relief, functional micromechanical properties (elasticity coefficient [Formula: see text], Young's modulus [Formula: see text], elastic [Formula: see text] and plastic [Formula: see text] deformations) and adhesive properties (wo...

The review of literature on AlN doping with nonmagnetic impurities (elements of groups I, II, III, and IV of both subgroups and rare earth elements), providing ferromagnetic properties, is presented. The magnetic and electrical properties of AlN are considered in detail. It follows from theoretical and experimental investigations that AlN doped wit...

We studied morphology, structure and micromechanical properties of the membrane of living human buccal epithelium cells in the presence of protective adsorption layer of ca. 100 nm on their surface by means of atomic force microscopy in contact and semicontact scanning modes in a broad range of force affections (0-40 µN ). Local mapping of micromec...

In this work demostrates a unique method for determining the absolute value of the friction force of a nanoobject on the surface of a cell membrane using atomic force microscopy. The tribological properties of membranes of adult human buccal epithelium cells in the presence of a protective adsorption buffer layer of ~ 100 nm on their surface were s...

The obtained results suggest that 60Co γ-irradiation with small doses (D γ ~140 Gy) has a complex impact on close AuNi/n-n+-GaN{0001} Schottky contacts. Such impact manifests itself in disappearance of current steps in the initial section of the forward current-voltage curve; improvement of average values of ideality factor n and decrease of averag...

A study of the formation of dislocations in the process of impurity diffusion in GaAs has been carried out. The formation of dislocations in GaAs diffusion layers doped with various impurities (elements of II, IV, and VI groups and transition elements) is studied, depending on the conditions of diffusion. It is shown that during the diffusion of im...

In this work the tribological properties of membranes of human buccal epithelium cells of adult in the presence of a protective adsorption buffer layer of ~ 100 nm on their surface were studied using atomic force microscopy in the contact scanning mode. Local mapping of the tribological characteristics of the surface was carried out, viz. friction...

The overview of scientific literature on the electric and magnetic properties of AlN doped with transition metal group atoms is presented. The review is based on the literature sources published mainly in the last 10 years. The doping was carried out by various methods: during the material growth (molecular beam epitaxy, magnetron sputtering, disch...

Investigations of the elemental composition and wettability of polylactic acid obtained by electrospinning and modified by argon and oxygen low-temperature atmospheric pressure barrier discharge plasma are described. X-ray photoelectron spectroscopy analysis indicates that the destruction and oxidation processes of polymer bonds occur simultaneousl...

In this study, the influence of the annealing conditions on the formation of macrosteps on the anthracene single crystal surface is demonstrated. Under normal conditions (room temperature, atmosphere pressure, and ambient light), the anthracene surface etching proceeds in two stages: formation of macrosteps with widths up to 15 μm and heights up to...

A significant effect of the environment (vacuum, air) on the results of measurements of CH 3 NH 3 PbI 3 films conductivity and photoconductivity is shown. It was found that prolonged illumination with white light does not change the value of CH 3 NH 3 PbI 3 interband photoconductivity (hν > 1.6 eV), but leads to a metastable increase in the photoco...

22 марта 2020 г. исполняется 60 лет со дня рождения Игоря Владиленовича Минина и Олега Владиленовича Минина – крупных ученых, профессоров, докторов технических наук. И.В. Минин и О.В. Минин внесли значительный вклад в ряд важных научных направлений в области физики.

Aluminum nitride doped with transition metal group atoms as a material for spintronics The overview of scientific literature on electric and magnetic properties of AlN doped with transition metal group atoms is presented. The review is based on literature sources published mainly in the last 10 years. The doping was carried out by different methods...

In this work, the effect of formation of macrosteps under dissolution of the anthracene single crystal surface is shown for the first time. Under standard conditions (room temperature, atmospheric pressure, natural illumination), the etching process of the anthracene single crystal surface can be divided into two stages: formation of macrosteps up...

Pentacene-based metal-insulator-semiconductor capacitors with SiO2 and SiO2/Ga2O3 insulators were investigated in the temperature range of 9–300 K. The capacitance-voltage curves of the fabricated capacitors had virtually no hysteresis when using SiO2 as an insulator. The hole concentration values, determined using the Mott–Schottky analysis, were...

A computer simulation approach to sintering of low-temperature ceramics has been developed within the framework of the micromechanics of heterogeneous media. It is taken into account that the reinforcement of the refractory component can be formed at different structural levels determined by the particle fraction size. The formation of the reinforc...

The solution of the tasks in the field of creating and processing materials for additive technologies requires the development of a single theory of materials for various applications and processes. A separate class of materials that are promising for use in additive technologies includes materials whose consolidation is ensured by the presence of...

Computer simulation methods have been applied to study the processes of low-temperature ceramics synthesis corresponding to technological processes. The simulation is performed for micron- and nanosized powders with different morphology. The synthesized composite medium has the characteristics (microlayer thickness, pore volume fraction, etc.) that...

We report a facile method for fabrication of highly concentrated electrostatically stabilized colloidal solutions containing ultra-small cerium (IV) oxide crystallites having a narrow size distribution (3–5 nm according to X-ray diffraction, and 10–30 nm according to dynamic light scattering). The proposed method comprises hydrothermal treatment of...

On the base of micromechanics of heterogeneous media the approach of computer simulation of the process of low-temperature ceramic sintering being synthesized by additive technologies of layer-by-layer build-up of the original polydisperse mixture and subsequent sintering is offered. The possibility of refractory component skeleton formation at dif...

The results of computer simulation of the structure and physical properties of sintered low-temperature ceramics specimens with different volume fractions of different components of refractory components are presented. Properties of sintered ceramics, residual porosity, and shrinkage anisotropy are determined by features of packing of various fract...

Investigations have shown that in the local approximation (for sizes L < 100 μm), AlGaN/GaN high electron mobility transistor(HEMT)structures satisfy to all properties of chaotic systems and can be described in the language of fractal geometry of fractional dimensions. For such objects, values of their electrophysical characteristics depend on the...

A variety of powdered aluminium and aluminium nitride fractions were obtained by the pneumatic circulation method. The aluminium powders have small particle sizes and low content of Аl2ОЗ·3Н2О. Processing the SHS-К and SHS-N aluminium nitride powders under the same operating conditions revealed significant difference in particles morphology which d...

It is shown that it is necessary to find the scaling function for a more comprehensive analysis of the statistical parameters of the surface morphology of solids and, in particular, GaN epitaxial films. This function accounts for both the experimental parameters and the conditions of study. It is demonstrated by the example of an atomic-force micro...

The results of investigation into forward-bias current-voltage characteristics of InGaN/GaN light-emitting diodes (LEDs) in the static and pulsed modes for current densities up to 1000 A/cm2are reported. It is shown that starting from 5–6 V, the voltage-current characteristics are described by a linear dependence at room temperature. The series res...

The decomposition of a solid solution of iron in gallium arsenide at 900°C has been studied by magnetic force microscopy and transmission electron microscopy. The results demonstrate that annealing of Fe-doped GaAs for 3 h leads to the formation of disk-shaped ferromagnetic inclusions 50–500 nm in diameter and 1.5–50 nm in thickness. The average in...

Lateral epitaxy of semiconducting materials has been developing for the last 15-20 years as a method of fabricating promising structures for micro-and optoelectronics [1, 2]. In particular, it has been used to fabricate permeable-base UHF transistors [4] and low-loss optical waveguides [4] and to reduce the cost of epitaxial layers for solar energy...

It was found that as a result of self-affine (fractal) geometry of GaN / AlGaN hetero-epitaxial layers, electrons in DEG-channel HEMT-structures move not in 2D, but in 3D plane. It leads to additional scattering of electrons and the linear resistance depends on DEG-channel source-drain HEMT-transistor size. Self-affine properties of the DEG-channel...

It was shown that modern AFM methods of controlling geometry and physical parameters of semiconductor InP/InGaAs/InP heterostructures can be successfully applied in manufacturing of modern UHF DHBT-transistors with narrow base (

On account of fractal nature (Df=2.62) of the gate layer of FET, instrumental characteristics, when length and width of the gate are reduced, will change disproportionally to square of change of linear dimensions of the gate (versus two-dimensional case) and noticeably slower - in proportion to changing of linear dimensions to the power of 4-Df, wh...

Using an atomic-force microscope, the decomposition of the supersaturated solid solution of iron-doped GaAs (GaAs:Fe) is studied. GaAs:Fe samples were obtained in the course of high-temperature diffusion of Fe into GaAs and subsequent annealing at a temperature by 200°C below the doping temperature. The measurements are performed for transverse cle...

Silicide formation in thin Cu films subjected to thermal annealing has been investigated by atomic force microscopy, scanning electron microscopy, X-ray diffraction, and energy-dispersive X-ray spectroscopy. It is shown that the periodic stress distribution at the film/barrier interface under elevated temperatures can govern the character of copper...

Investigations of the potential of the free surface of gallium arsenide and of the surface coated (locally or entirely) by thin layers of gold or platinum have been carried out using atomic force microscopy in the Kelvin mode. The results obtained show that the potential measured in the metal-probe system corresponds as a whole to its contact poten...

The method of atomic-force microscopy has been used to experimentally study the effect of growth conditions on the structure of the surface of epitaxial GaN layers grown by molecular-beam epitaxy. Quantitative values of the density, height, and width of growth centers in relation to the conditions of epitaxy are obtained; the average length of the...

Atomic-force microscopy studies of epitaxial n-GaAs surfaces prepared to deposit barrier contacts showed that major relief for such surfaces is characterized by a roughness within 3–15 nm, although “surges” up to 30–70 nm are observed. Using three independent methods for determining the spatial dimension of the surface, based on the fractal analysi...

It is shown that relief forms of surface and character of distribution of potential irregularities of epitaxial gallium arsenide and barrier Au-metallization have fractal geometry, which in a local approximation must be defined as geometry and homogeneity of metal -semiconductor contact interfaces with Shottky barrier. This must be considered while...

We have found out that current density distribution areally in a free contact (without a dielectric in circumferential direction) of semiconductor metal (SM) with Schottky barrier (SB) on the submicron level and the nanolevel is very incoherently. In the field of low currents with low tension the shift of the electrical circuit is determined by a n...

Using the method of atomic force microscopy, complex studies of the profile, potential distribution φ(x,y), and distributions of the phase contrast of the surface of n-GaAs subjected to various types of chemical treatment are carried out. The distribution of the potential and phase contrast at a microlevel, in general, correlates with the profile c...

The results of examination of the GaAs-target erosion under irradiation by a high-power pulsed ion beam are reported. In the experiments, use was made of a high-power pulsed ion source with the following parameters: ion energy --- 250 keV, target current density --- 350 A/cm2, pulse duration --- 80 ns, target energy density --- up to 7 J/cm2. The t...

The problem of defect formation in the GaAs and InGaAs layers grown by low-temperature molecular-beam epitaxy is discussed. The effect of growth conditions (temperature and flux ratio between the elements of groups III and V) on the morphology of growth surface, internal structure, type, and concentration of electrically-and optically active defect...

The composition of the adsorption layer formed on the GaAs (001) surface at the initial stages of heteroepitaxial growth of InP in a chloride vapor-transport system is calculated within a thermodynamic approach. The obtained results allow us to understand the reasons for formation of a thin GaInAsP layer of variable composition experimentally obser...

Elementary surface processes occurring during vapor-phase epitaxy of the III–V compounds are studied using experimental and calculation methods. The calculated vapor-phase composition in the reactor and the adsorptionlayer composition on the growth surface were compared with the experimental data on the surface structure and electrophysical propert...

Results are obtained from the experimental studies (atomic force and transmission microscopy) of the influence of III/V flux ratio on the topography and internal structure of LT MBE films of InGaAs and GaAs. The layers are shown to contain both the surface growth defects — the volcano-like pits and microdrops of III group elements, and the bulk def...

The effect of dopant concentration and growth-surface crystallographic orientation on the incorporation of Si into Ga and As sublattices was investigated during GaAs molecular-beam epitaxy. The epitaxial layers (epilayers) were grown on GaAs substrates with (100), 2°(100), 4°(100), and 8°(100) orientations at a temperature of 520°C and with (111)A,...

A review of studies performed at the V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State University and aimed at obtaining detailed information on the elementary growth processes proceeding at the crystallization front during vapor-phase epitaxy of semiconducting III–V compound films is presented in the paper. The general approach...

Surface morphology and structure of thin silicon oxide and boron nitride films as well as of their two-layer composition are studied by atomic force and transmission electron microscopy. The films were prepared by chemical vapor deposition on GaAs substrates. The substrate temperature is shown to effect greatly on surface relief and internal micros...

The effect of the arsenic concentration in the vapor phase on the growth step distribution over the surface of GaAs epitaxial layers grown in a chlorine-hydride vapor-transport system on substrates with 4° (111)A and (113)A orientations is studied. It is demonstrated that the average distance between steps in the echelon depends on the arsenic conc...

It was found that the atomic-hydrogen treatment of n-GaAs epitaxial samples having initially high-quality surfaces both with a SiO2 protective film on the n-layer surface and without it can lead to the amorphization of these surfaces and a thin (≈7 nm) surface layer, which is accompanied by the formation of a hydride phase. The lack of a hydrogen s...

The influence of concentrations of vapor-phase growth components on the structure of singular, vicinal, and nonsingular growth surfaces of InAs epitaxial layers grown in the In–AsCl3–H2 system is investigated by the methods of electron microscopy. It is established that the average distance ? between steps in the echelon increases as the input pres...

Experimental proofs of asymmetric trapping of atoms at the growth step in vapor-phase epitaxy of gallium arsenide in the GaAs–AsCl3–H2 system are given. The data obtained confirm the important role of the surface diffusion mass transfer in the growth of epitaxial GaAs layers on vicinals in the neighborhood of (111)A. The effective diffusion length...

The influence of crystallographic orientation of the growth surface near (100) and (111)A GaAs singular faces on the silicon capture into A- and B-sublattices of gallium arsenide in molecular beam epitaxy is investigated by the electrophysical and photoluminescence methods. It is demonstrated that the silicon dopand is incorporated into GaAs layers...

InGaAs layers grown by low-temperature molecular-beam epitaxy on InP substrates at variable flow ratios between elements of groups III and V are investigated. Layers with a defect structure and low electrophysical parameters are shown to grow with an excess of the components of group III. Growth with high As flows gives rise to trapping of excess a...

This paper describes studies of InGaAs layers grown by molecular-beam epitaxy on InP (100) substrates at temperatures of 150–480 °C using various arsenic fluxes. It was found that lowering the epitaxy temperature leads to changes in the growth surface, trapping of excess arsenic, and an increased lattice parameter of the epitaxial layer. When these...

It is known that during gas-phase epitaxy of InP and GaAs the region of the film close to the heteroboundary is formed with altered phase, structural, and electrophysical properties. The main cause for this is formation of a transition layer due to a change in the growth mechanism (transition from nucleational to layer-step growth) and the structur...

We study epitaxial GaAs and InGaAs films produced by molecular-beam epitaxy in the temperature range 150–480C and with various arsenic partial pressures. We determine the structural and electrophysical characteristics of the film (the excess arsenic, the crystal lattice parameter, and the carrier concentration and mobility) as a function of the gro...

We review the results obtained in recent years by various authors with regard to the physics of complex semiconductor crystals, superlattices, and structures with quantum wells and barriers. We discuss the production processes for nonlinear optic crystals which produce high quality materials, and the changes in the electrophysical properties of a l...

We studied the formation of nano-scale clusters in GaAs films grown by chemical vapor deposition in a Ga/AsCl3/H-2 system. Two alternative approaches were analyzed. The one of them is realized via introduction of S, Te, and Sn in the gas phase. in this case, the cluster formation was accompanied by strong increase in deep level concentration. In th...

The superconductive behavior of spherical In-Ga clusters of diameter ∼1 μm formed on the surface of a GaAs host crystal is investigated. Specific attributes of the magnetic field-dependent microwave absorption are observed under conditions when the penetration depth of the external static magnetic field is comparable with the size of the supercondu...

Crystallization kinetics of lateral epitaxy of GaAs on (001) and (011) GaAs substrates in a Ga/AsCl 3/H 2 system is studied by the methods of optical and scanning electron microscopy. It is shown that the dependence of the lateral growth rate V L on the azimuthal angle α lying in the substrate plane is substantially anisotropic. The directions of f...

The initial stages in the growth of indium phosphide films on gallium arsenide substrates in a chloride gastransport system are investigated by transmission electron microscopy and electron-diffraction and secondaryion mass spectrometry techniques. It is shown that decomposition and/or etching of the surface oxide film and formation of a chemically...

This report presents the investigation results of spectral composition of ion beams generated by magneto-insulated ion diode of «MUK-M» and «TEMP» accelerators 1,2. Energetical and mass characteristics of the accelerated ion beam were determinated by Thomson spectrometer with CR-39 plate detector (MOM-Atomki Nuclear Track Detector, Type MA-ND/p). A...

This report presents the investigation results of spectral composition of ion bemas generated by magneto-insulated ion diode of “MAC-M” accelerator. Energetical and mass characteristics of the accelerated ion beam were determined by Thomson spectrometer with CR-39 plate detector. Accelerated ion energy was from 40 up to 240 keV. Mass composition co...

The structure and properties of GaAs layers grown by molecular-beam epitaxy at low temperature (150-250 °C) have been studied. The samples were found to contain up to 1.5 at.% extra As, which formed nano-scale clusters under annealing. The dependences of the excessive As concentration and As-cluster size and density on the growth and annealing cond...

A direct experimental proof was obtained (in the specific case of GaAs) of the dominant role of the substrate surface in the formation of defects representing step retardation sites during vapor phase epitaxy of III V compounds.

In this paper we demonstrate the possibility of using Abrahams-Buiocchi etchant, widely used for revealing the dislocation structure of GaAs monocrystals, for studying submicroscopic impurity micro-inhomogeneities in epitaxial layers of GaAs. The required information is achieved by using etching patterns of electron microscopy replicas for the stud...

Electron microscopy, reflection electron diffraction, and x-ray diffraction analysis are used to investigate solid-state recrystallization processes in the Ni-GaAs and Pd-GaAs structures at room temperature and during heat treatment in a hydrogen atmosphere. Contacts were produced by electrodeposition of the metal (Ni, Pd) onto the (111) A surface...

A study has been made of the influence of the inlet pressure of arsine on the growth rate and structure of the growth surface of epitaxial GaAs layers in the GaCl-AsH3-H2 system. We show that at low arsenic concentrations in the vapor phase the polarity of the ends of the steps has an effect on the growth of GaAs layers, changing the shape of V( ph...

Electron-microscope studies have been carried out on the relief of the growth surface of epitaxial gallium arsenide layers in the vicinity of the (111)A face and the quantitative characteristics of the elements of the relief have been determined: the density of growth centers on a singular face, the height of the steps, and the distances between st...

The study presented shows that the growth rate in chemical vapor deposition of gallium arsenide is determined, under a wide range of conditions, by the rate of the surface processes. The quantitatively varying anisotropy of growth rate retains the basic features which can be interpreted qualitatively in the framework of a simple model based on the...

The methods of Rutherford back scattering of helium ions and x-ray diffraction and electron microscope analysis are used to study phase interaction in GaAs contacts with layers of group I metals (Cu, Ag, Au) with annealings in a hydrogen atmosphere. The nature of the interaction and the mechanisms of degradation of the volt-ampere characteristics o...

Thus, consideration of the temperature dependences of the growth rate of singular and vicinal GaAs faces made it possible to determine the activation energy of the growth process in the kinetic region, to demonstrate the changes in the activation energy on passing from singular to vicinal faces, to estimate the magnitude of these changes, and also...

Thus, joint analysis of data on the growth rate and the structure of the growth surface of epitaxial GaAs layers made it possible to obtain quantitative characteristics of the surface processes (tangential velocity of steps, average diffusion length of adsorbed particles, reaction time at a kink, density and average height of growth steps) and thei...

The electrophysical properties and the growth rates of InAs layers are considered as a function of the substrate orientation in the crystallographic range (111)A-(001)-(111)B. A comparison is made with similar dependences for GaAs.

An experimental investigation was made into the growth kinetics and relief of the growth surface for the (111)A, (111)B, (110), and (001) planes of gallium arsenide for different degrees of supersaturation determined by the difference between the temperatures of the source and the substrate. The obtained dependences are interpreted on the basis of...

Kinetic (growth rate), optical, and electron-microscopic (surface relief) studies were made of the process of formation of homoepitaxial films of InAs in a chloride gas-transport system. It was found that the (111)A and B surfaces of indium arsenide and their vicinals grew by the step-layer mechanism, whereas the (001) surfaces and those inclined f...

In electron microscopy investigation of the growth surfaces of GaAs films deposited in CVD systems specific growth defects were detected. The form of the defects resembled that of “the pinning sites” observed earlier on silicon films deposited in ultra-high vacuum (ABBINK et al.; PCHELYAKOV et al.). However, it turned out that the particles which c...

Electron-microscope investigations show that in the SiCl4,-H2 system at sufficiently high purity of the substrate surface and the gas-phase mixture in a low-temperature process, morphologically perfect epitaxial layers of silicon grow by a step-layer mechanism. Estimates are given for a number of parameters of the silicon-layer growth surface.