Hidetoshi Miyazaki

• PhD
• Professor (Associate) at Nagoya Institute of Technology

We present a comprehensive investigation of chromium-substituted delafossite CuFe₁₋ₓCrₓO₂ using synchrotron X-ray diffraction (SR-XRD), X-ray absorption fine structure (XAFS) spectroscopy, and physical property measurements (10-300 K). The studied pristine CuFeO₂ exhibits a stable dual-phase structure comprising dominant trigonal-rhombohedral (R-3m...

The half-Heusler TiNiSn alloy is a promising candidate for thermoelectric power generation, capable of directly converting waste heat into electric power, due to its high thermoelectric performance over a wide temperature range from 500 to 1000 K. However, the thermoelectric performance of p-type TiNiSn is much lower than that of its n-type counter...

In this study, Cu/AlN composites and functionally graded materials (FGMs) were fabricated with the spark plasma sintering (SPS) method. It was observed that a two-step sintering process, involving sintering under low pressure as the initial stage to remove adsorbed chemicals on the powder, was an effective method for producing sintering objects wit...

The Heusler-type Fe2VAl alloy is a promising candidate for use in fabricating a thermoelectric power generation device because of its large Seebeck coefficient and high electrical conductivity. However, the high thermal conductivity of this alloy, as a thermoelectric material, degrades its power generation capacity. In this study, to reduce its the...

Using our new program code, we have calculated the temperature dependence of the Seebeck coefficient (\(S-T\)) in the linearized Boltzmann transport equation with a constant relaxation time (LBT-CRT) for Fe2VAl (cF16) and its quaternary compounds for the range from − 263 °C (10 K) to 727 °C (1000 K). We revealed that Fe2VAl compound free from any d...

The influence of Mn substitution on the iron lattice sites in LiFeO2 material was investigated with respect to the electronic, crystalline, and electrochemical properties of the material, using the LiFe1−xMnxO2 (x = 0.0, 0.05, and 0.10) series. The electronic structure study was conducted with the acquisition of x-ray absorption fine structure spec...

Advances in many isolation studies have revealed that pure Dehalococcoides grow stably, although the large‐scale pure cultivation of Dehalococcoides has yet to be established. In this study, 7 L‐culturing of Dehalococcoides mccartyi strain NIT01 was first performed using vessels made of glass and stainless alloy SUS304. All batches cultured in the...

We investigated the electronic structure of the Mg99.2Zn0.2Y0.6 alloy using hard and soft X-ray photoemission spectroscopy and electronic band structure calculations to understand the mechanism of the phase stability of this material. Electronic structure of the Mg99.2Zn0.2Y0.6 alloy showed a semi-metallic electronic structure with a pseudo-gap at...

Dilute Mg-Zn-Y alloy with a mille-feuille structure (MFS) exhibits a mechanical strength comparable to Mg-Zn-Y alloy with long period stacking/ordered (LPSO) structure through kink deformation. In order to deepen understanding the thermal stability of the MFS-type Mg alloys, it is required to clarify the solute cluster structures composed of Zn and...

Carbon nanotubes (CNTs) as fillers in ceramic matrix composites have been widely explored to enhance the thermal properties due to its excellent thermal transport mechanism. Zinc silicate (ZS) is a crystalline ceramic with good fluorescence properties but low thermal diffusivity and effusivity. The introduction of CNTs into ZS is a good approach to...

Na 3 OBr is fabricated using purified Na 2 O. The dominant lattice defects are the site mixing of Br ⁻ and O ²⁻ rather than the Schottky pairs. Conductivity of Na 3 OBr increases by doping excess Br ⁻ ions while Ca ²⁺ doping results in the deterioration of the conductivity.

We investigated Heusler-type Ru2VAl, a candidate material for next-generation thermoelectric conversion, by first-principle calculations of its thermoelectric conversion properties and direct experimental observations of its electronic structures, employing photoemission and infrared spectroscopy. Our results show that Ru2VAl has a wider pseudogap...

The effects of ball milling on the ionic conduction properties of LiI are investigated. It is found that ball milling drastically increased the conductivity of LiI to 1 × 10⁻⁵ S/cm at room temperature. The activation energy for ion conduction is not significantly changed. The local structure of ball-milled LiI is investigated by a pair distribution...

The electronic structure of single-crystalline EuO (100) ultrathin films, together with their exchange splitting energy (ΔE EX) and ferromagnetic phase transition temperature (T C), was investigated by temperature- and thickness-dependent angle-resolved photoemission spectroscopy. Both ΔE EX and T C decreased monotonically with decreasing film thic...

We investigated the electronic structure of Fe2‐x Re x VAl compounds using bulk‐sensitive hard X‐ray photoelectron spectroscopy (HAXPES) measurements and electronic band calculations to elucidate the origin of the improvement in their thermoelectric properties. The HAXPES results showed that, with the substitution of Re atoms for the Fe site, a new...

We studied TaSb2, a candidate material for the thermoelectric conversion, to establish a method for the synthesis of polycrystalline bulk materials with a diameter greater than 10 mm. Polycrystalline TaSb2 materials with relative densities exceeding 97% were successfully prepared by combining the solid‐state reaction method with the spark plasma si...

In this study, a theoretical approach to the thermoelectric properties of popular thermoelectric materials, Bi2Te3, Bi2Se3, CuAlS2, Cu12Sb4S13 , was made by x-ray absorption fine structure (XAFS) calculations. The traces of thermoelectric properties were studied by means of the electronic scattering mechanisms by the repulsive force of outer-shell...

The local structure around doping Ta atoms in Fe2V1−xTaxAl alloys is investigated using X‐ray absorption fine‐structure (XAFS) and synchrotron radiation X‐ray diffraction (SR‐XRD) measurements to elucidate the origin of the reduction in their thermal conductivity. XAFS and SR‐XRD results show that with the substitution of Ta atoms at the V site, lo...

Heusler-type Fe2V0.90+xTa0.10Al1−x alloys have been processed by high-pressure torsion (HPT) to improve the thermoelectric performance via a significant decrease in thermal conductivity. Before HPT processing, the x = 0.08 alloy (Fe2V0.98Ta0.10Al0.92) has a thermal conductivity of 6.0 W m⁻¹ K⁻¹ at 300 K and a dimensionless figure of merit up to ZT...

Bi2Te3 materials were synthesised by the recently developed flash sintering (FS) method, and the rapid densification effect was studied. Whereas a fully densified sample can be obtained with a feeding current of 1.2 kA for 1 s, the limited heating effect reduces grain growth and atomic diffusion. Interestingly, the significant chemical reaction sup...

X-ray fluorescence holography (XFH) measurements were carried out for multiferroic Pb(Fe1/2Nb1/2)O3 (PFN) single crystal to investigate variations in the local structures around Nb ions with decreasing temperature from 300 to 100 K, in combination with single-crystal x-ray diffraction (XRD) experiments. We find that the Nb–Pb correlation is more si...

Half-Heusler compound has drawn attention in a variety of fields as a candidate material for thermoelectric energy conversion and spintronics technology. When the half-Heusler compound is incorporated into the device, the control of high lattice thermal conductivity owing to high crystal symmetry is a challenge for the thermal manager of the device...

Abstract The half-Heusler NiZrSn (NZS) alloy is particularly interesting owing to its excellent thermoelectric properties, mechanical strength, and oxidation resistance. However, the experimentally investigated thermal conductivity of half-Heusler NZS alloys shows discrepancies when compared to the theoretical predictions. This study investigates t...

The half-Heusler compound has drawn attention in a variety of fields as a candidate material for thermoelectric energy conversion and spintronics technology. This is because it has various electronic structures, such as semi-metals, semiconductors, and a topological insulator. When the half-Heusler compound is incorporated into the device, the cont...

In various kinds of functional material, its properties can be controlled by microstructure refinement in order to optimize its performance. Especially for a thermoelectric material, the reduction of thermal conductivity by the microstructure refinement can enhance its utility for thermoelectric energy conversion devices. For the fabrication of a f...

We have investigated the electronic structure of a potential thermoelectric material, higher manganese silicide, and its solid solutions with supersaturated Re by means of hard x-ray photoemission spectroscopy. The unusual Re substitution dependence of thermoelectric properties in the higher manganese silicide, reducing the electrical resistivity w...

X-ray absorption fine structure (XAFS), x-ray fluorescence holography (XFH), and inelastic x-ray scattering (IXS) techniques were applied to an Fe2(V0.95Ta0.05)Al Heusler-type thermoelectric material to investigate the doping effect of Ta on the local structure and the atomic dynamics. The XAFS and XFH results show that the positional correlation b...

Improvement of p-type thermoelectric performance for Heusler-type Fe2V1.08−yTiyAl0.92 alloys with y = 0–0.34 has been investigated, focusing on the valence electron concentration (VEC) effect for tuning the Fermi level across the center of the pseudogap via Ti doping, combined with a constructive modification of the electronic structure around the...

This study examines the near-net-shape fabrication, by flash sintering, of a sintered body for use in a thermoelectric module. Gas-atomized Fe2VAl powder was sintered with a current feed, for a duration on the order of seconds, using an apparatus specially devised for flash sintering. This produced sintered bodies in columnar form, with a diameter...

We have investigated the electronic structure of A-site ordered CaCu3Ti4O12 as a function of temperature by using angle-integrated and -resolved photoemission spectroscopies. Intrinsic changes of the electronic structure have been successfully observed in the valence band region by the careful consideration of charging effects. The obtained photoem...

We have investigated the electronic structure of A-site ordered CaCu$_3$Ti$_4$O$_{12}$ as a function of temperature by using angle-integrated and -resolved photoemission spectroscopies. Intrinsic changes of the electronic structure have been successfully observed in the valence band region by the careful consideration of charging effects. The obtai...

We experimentally find that the substitution of Si for Al in Heusler-type Fe2VAl epilayers contributes to the significant reduction in the thermal conductivity, in which Fe2VAl is one of the next-generation thermoelectric materials without using toxic elements. Because of the low-temperature growth of the epilayers, the Si substitution induces the...

We investigated the electronic structure of a thermoelectric material, Heusler-type Fe2VAl thin film, by hard X-ray photoemission spectroscopy and electronic band structure calculation to understand the improvement process of the thermoelectric properties of this material. Electronic structure of the Fe2VAl thin film showed a semi-metallic electron...

This study set out to examine the flash sintering of thermoelectric materials. A finite element method analysis of electric current activated/assisted sintering with an insulating mold suggested that the use of a sufficiently high Joule-heating rate, such as >10 000 K/s, relative to the thermal diffusion rate of the mold material, can realize unifo...

Heusler-type Fe2VAl thermoelectric materials have been processed by high-pressure torsion (HPT) to improve their thermoelectric performance through a drastic reduction of the thermal conductivity. While the thermal conductivity for Fe2VTa0.05Al0.95 is about 10 W/m K at 300 K, it is reduced to about 5.0 W/m K due to HPT processing. Furthermore, even...

In order to clarify the effect of BH4⁻ anions on the Li⁺ ion doping into the KI-KBH4 solid solvent systems, the concentrations of the Li⁺ and BH4⁻ ions in a solid solvent were separately controlled. The dissolving of LiI into the KI-KBH4 solid solvent was confirmed, while the formation of a solid solution between KI and LiI was not realized without...

Since the discovery of unconventional quantum criticality in the Au–Al–Yb quasicrystal and pressure-induced quantum criticality in its approximant, quasicrystals and approximants with an icosahedral cluster of atoms have attracted much attention. Here we report magnetic, thermodynamic, transport, and hard x-ray photoemission spectroscopy experiment...

CaMgSi intermetallic compound is expected to have high thermoelectric performance from its electronic structure with pseudo-gap, which is predicted by the ab-initio calculation. This study synthesized the bulk-shaped CaMgSi with stoichiometric and off-stoichiometric compositions through mechanical ball milling and subsequent pulse current sintering...

The electronic structures of Heusler-type Fe2V1− x Ta x Al and Fe2VAl1− x Ta x alloys were investigated by electronic band structure calculations and synchrotron radiation photoelectron spectroscopy measurements to elucidate the change in the electronic structure due to the Ta substitution. While V and Ta atoms have the same electron configuration,...

Supplementary Figures 1-3

Centimeter-sized bulk CaMgSi intermetallic compounds are synthesized and its thermoelectric property are reported in this study. The CaMgSi intermetallic compound consists of nontoxic, inexpensive and lightweight elements, and has a pseudogap near the Fermi energy, EF, in the electronic density of states. The bulk Ca33.3+xMg33.3−xSi33.3 (x = −12–3)...

The band structure and electron transport properties of Mn11Si19 higher manganese silicide (HMS), which solely consists of cheap and nontoxic elements and possess high ZT-value exceeding 0.5 at around 1000 K, were calculated to reveal the characteristics in electronic structure and their roles in making the electron transport properties suitable fo...

The dimensionless figure of merit, ZT, of Al-Mn-Si based C54 phase was effectively increased using the precipitation of a small amount of Al-Mn-Si based C40 phase, which possesses slightly smaller magnitude of both electrical resistivity and Seebeck coefficient than those of C54 phase. We prepared a series of samples by simply alloying Al37(Mn26Ru3...

A synergistic effect between strong electron correlation and spin-orbit interaction (SOI) has been theoretically predicted to result in a new topological state of quantum matter on Kondo insulators (KIs), so-called topological Kondo insulators (TKIs). One TKI candidate has been experimentally observed on the KI SmB6(001), and the origin of the surf...

A synergistic effect between strong electron correlation and spin-orbit interaction (SOI) has been theoretically predicted to result in a new topological state of quantum matter on Kondo insulators (KIs), so-called topological Kondo insulators (TKIs). One TKI candidate has been experimentally observed on the KI SmB6(001), and the origin of the surf...

In this study, we developed a higher manganese silicide (HMS) that possesses a high dimensionless figure of merit ZT exceeding unity. HMSs containing a larger amount of Re than its solubility limit were prepared by the liquid quenching technique, and the obtained metastable HMSs showed good thermal stability to enable pulse current sintering at 124...

Heusler-type Fe2V1−xAl1+x alloys having off-stoichiometric composition were fabricated by the powder metallurgical process using mechanical alloying and pulsed current sintering. Depending on the valence electron concentration, a positive (x>0) or negative (x<0) Seebeck coefficient was obtained resulting from a Fermi level shift. The electrical res...

We report the thermoelectric properties of the off-stoichiometric Fe2−yV1+x+yAl1−x alloys in the temperature range from 300 to 750 K. Fe2−yV1+x+yAl1−x alloys with V-rich (1+x+y>1−x, i.e., y>−2x) and Al-rich (y<−2x) composition show the negative and positive sign of Seebeck coefficient, respectively, and the peak temperature of Seebeck coefficient s...

In this study, we intended to increase the dimensionless figure of merit, ZT, of Al-Mn-Si based C54-phase using the precipitation of a small amount of Al-Mn-Si based C40-phase that possesses slightly smaller magnitude of both electrical resistivity and Seebeck coefficient. By knowing that both C54-phase and C40-phase in Al-Mn-Si alloy system are li...

Heusler-type Fe2V1−x Al1+x sintered alloys with micrometer-sized grains were fabricated by the powder metallurgical process using mechanical alloying and pulse-current sintering. Both positive (∼90 μV/K) and negative (∼−140 μV/K) Seebeck coefficients were obtained for the composition ranges of x > 0 and x < 0, respectively, resulting from a Fermi l...

The lattice thermal conductivity of the Al-Mn-Si C40 phase was effectively reduced by substituting a small amount of W for Mn while maintaining a large Seebeck coefficient |S| > 100 µV/K and a low electrical resistivity ρ < 1.7 mΩ cm. The Al-Mn-Si-based C40 phase containing a small amount of W showed essentially the same behaviors of both Seebeck c...

This study investigates the electronic and local crystal structures of the hole-doped Zr1�xYxNiSn and electron-doped Zr1�xNbxNiSn alloys using synchrotron radiation photoemission spectroscopy (SR-PES) and synchrotron radiation X-ray powder diffraction (SR-XRD) measurements, thereby clarifying the mechanisms underlying the thermoelectric performance...

Ce 3d-4f resonant angle-resolved photoemission measurements on CeCoGe$_{1.2}$Si$_{0.8}$ and CeCoSi$_{2}$ have been performed to understand the Fermi surface topology as a function of hybridization strength between Ce 4$f$- and conduction electrons in heavy-fermion systems. We directly observe that the hole-like Ce 4$f$-Fermi surfaces of CeCoSi$_{2}...

We report the thermoelectric properties of Heusler-type off-stoichiometric Fe 2 V 1+x Al 1−x alloys. Due to the off-stoichiometric effect, which is the substitution of V/Al atoms with Al/V atoms, semiconductor-like electric resistivity behavior in Fe 2 VAl is changed to metallic behavior in Fe 2 V 1+x Al 1−x alloys and both positive and negative ab...

We investigated the electronic and local crystal structures of the sintered half-Heusler ZrNiSn alloy by synchrotron radiation photoemission spectroscopy (SR-PES), synchrotron radiation X-ray powder diffraction (SR-XRD) measurements, and electronic band structure calculations to clarify mechanisms leading to improvements in the thermoelectric prope...

The low-temperature electrical resistivity of off-stoichiometric Heusler-type alloys Fe2−xVAl1+x shows semiconducting–metallic–semiconducting temperature-dependences as the excess Al content x is increased. To clarify the origin of their transport properties, in particular, semiconducting temperature-dependence of the electrical conductivity observ...

SiC crystal is a wide band gap material of high hardness and chemical inertness. Graphene is nowadays a ubiquitous 2D material that would revolutionize many applications. Combining the characteristics of SiC and graphene higher performance and efficiency are expected, e.g. for high frequency electronic devices. The obtaining of graphene directly on...

This study focuses on the thermoelectric properties of the Heusler-type Fe2VTa x Al 1− x alloys (0≤x≤0.12) . By means of Rietveld analyses on synchrotron X-ray diffraction patterns, it is shown that the Ta atoms enter sites occupied by V atoms in the stoichiometric Fe2VAl alloy, while the ejected V atoms are transferred to the vacant Al sites. This...

The lattice thermal conductivity of the Al-Mn-Si C54-phase, which possesses a large magnitude of the Seebeck coefficient and metallic electrical conduction, was greatly reduced by partial substitution of the heavy elements Ru and Re for Mn; these were selected by first principles calculations so as not to produce impurity states near the chemical p...

We report the electronic structure of EuO thin films not only parallel to but also perpendicular to the (001) plane using synchrotron radiation angle-resolved photoemission spectroscopy. As a result, the electronic structure perpendicular to the (001) plane is consistent with in-plane electronic structure in spite of the thin films. This result imp...

Topological insulators are insulating materials but have metallic edge states with peculiar properties. They are considered to be promising for the development of future low energy consumption nano-electronic devices. However, there is a major problem: Naturally grown materials are not truly insulating owing to defects in their crystal structure. I...

DOI:https://doi.org/10.1103/PhysRevLett.110.149901

We report angle-resolved photoemission spectroscopy (ARPES) results of A-site ordered perovskite CaCu$_3$Ti$_4$O$_{12}$. We have observed the clear band dispersions, which are shifted to the higher energy by 1.7 eV and show the band narrowing around 2 eV in comparison with the local density approximation calculations. In addition, the high energy m...

We report the thermoelectric properties of Heusler-type off-stoichiometric Fe2V1+xAl1?x alloys. Due to the off-stoichiometric effect, which is the substitution of V/Al atoms with Al/V atoms, semiconductor-like electric resistivity behavior in Fe2VAl is changed to metallic behavior in Fe2V1+xAl1?x alloys and both positive and negative absolute Seebe...

We report the new fabrication method of single crystalline EuO thin film along the (100) plane and its crystal structure and magnetic property. EuO thin film was fabricated on SrO buffer layer created on SrTiO3 substrate. The obtained EuO thin film was formed a single phase of the rock-salt structure with the lattice constant of 0.516 nm and showed...

We studied the atomic and electronic structures of ultrathin Bi(111) films grown on Bi_{2}Te_{3} by means of angle-resolved photoemission, first-principles calculations, and low-energy electron diffraction. These Bi films were found to be strained due to the influence of the substrate. Accordingly, the band structure is affected and Bi undergoes a...

We report the electronic structure of a prototypical valence fluctuation system, YbAl2, using angle-resolved photoemission spectroscopy. The observed band dispersions and Fermi surfaces are well described in terms of band structure calculations based on local density approximation. Strong hybridization between the conduction and 4f bands is identif...

We report the formation of a bilayer Bi(111) ultrathin film, which is theoretically predicted to be in a two-dimensional quantum spin Hall state, on a Bi(2)Te(3) substrate. From angle-resolved photoemission spectroscopy measurements and ab initio calculations, the electronic structure of the system can be understood as an overlap of the band disper...

The anisotropic electronic structure responsible for the antiferromagnetic transition in CeRu$_2$Al$_{10}$ at the unusually high temperature of $T_0$ = 28 K was studied using optical conductivity spectra, Ce 3d X-ray photoemission spectra, and band calculation. It was found that the electronic structure in the $ac$ plane is that of a Kondo semicond...

We report the temperature-dependent three-dimensional angle-resolved photoemission spectra of the Kondo semiconductor SmB$_6$. We found a difference in the temperature dependence of the peaks at the X and $\Gamma$ points, due to hybridization between the Sm 5d conduction band and the nearly localized Sm 4f state. The peak intensity at the X point h...

The valence-band and core-level photoemission spectra of n-type thermoelectric Heusler(L21)-type alloys Fe2 − x − yIryV1 + xAl and p-type ones Fe2 − xV1 + x − yTiyAl have been studied to clarify the origin of the enhancement of their thermoelectric power. It is found that the excess V content x (V-rich for x > 0 and Fe-rich for x < 0) causes the dr...

We report the anisotropic changes in the electronic structure of a Kondo semiconductor CeOs$_2$Al$_{10}$ across an anomalous antiferromagnetic ordering temperature ($T_0$) of 29 K, using optical conductivity spectra. The spectra along the $a$- and $c$-axes indicate that a $c$-$f$ hybridization gap emerges from a higher temperature continuously acro...

We have performed in situ spin- and angle-resolved photoemission and ex situ magnetotransport measurements on ultrathin topological insulator Bi2Se3 films. The surface states deviate from a simple isotropic Dirac fermion due to hexagonal warping effects and their spin helical nature has been verified. In addition, the bulk states also cross the Fer...

We report the fabrication of single-crystalline La-doped EuO thin films with a Curie temperature (T_C) of about 200 K, the highest among rare-earth compounds without transition metals. From first-principle band calculation and x-ray diffraction measurement, the observed increase in T_C cannot be explained only by the increas...

We have studied the growth and electronic/transport properties of ultrathin Bi1−xSbx alloy films, which the bulk is reported to be a topological insulator for 0.07<x<0.22. We found that single crystal epitaxial films as thin as ∼30 Å could be grown on silicon for 0≤x<0.32. The Z2 topological number of the films was shown to be nontrivial from the s...

We have measured the band dispersion of ultrathin Bi2Se3 films formed on a silicon substrate using angle-resolved photoemission spectroscopy. An energy gap opening in the topological surface-state bands of the three-dimensional topological insulator Bi2Se3 is observed due to the hybridization of the top and bottom surfaces. The drastic change in th...

The valence-band and core-level electronic structures of Heusler-type alloys Fe2-x-y).Iry,V1+xAl have been investigated by soft X-ray photoelectron spectroscopy, which shows that the valence-band structure near the Fermi level Ef is drastically altered by the off-stoichiometric concentration change x, while the position of Ef is moderately tuned by...

We have measured the temperature-dependent X-ray diffraction pattern of a single-crystalline EuO (100) thin film to investigate the change of the lattice constant due to the ferromagnetic phase transition. No structural transition was observed and the contracting rate of the lattice constant was dramatically increases below the ferromagnetic phase...

We grew the single crystal of stoichiometric Tm5Si2.0Ge2.0 using a Bridgeman method and performed XRD, EDS, magnetization, ac and dc magnetic susceptibilities, specific heat, electrical resistivity and XPS experiments. It crystallizes in orthorhombic Sm5Ge4-type structure. The mean valence of Tm ions in Tm5Si2.0Ge2.0 is almost trivalent. The 4f sta...

The thermoelectric properties of Ba3Co2O6(CO3)0.7 have been investigated using prismatic single crystals elongated along the c axis. Ba3Co2O6(CO3)0.7 has a pseudo-one-dimensional structure similar to that of 2H perovskite-type BaCoO3 and contains CoO6 octahedral columns running parallel to the c axis. The prismatic crystals are grown by a flux meth...

We measured the temperature-dependent three-dimensional angle-resolved photoemission spectra of EuO (100) thin film, a typical Heisenberg ferromagnetic semiconductor, to investigate the essential origin of the ferromagnetic transition. We observed sizable energy dispersion and large binding-energy shift of the Eu 4f state below the Curie temperatur...

We report on the single-crystal growth of EuO thin films [fcc 1× 1 (100)] and their magnetic, optical, and photoelectrical properties to examine the consistency with the bulk materials. EuO thin films were fabricated on a BaO buffer layer created on a SrTiO3 substrate. The obtained EuO thin film was found to be a ferromagnetic semiconductor with a...

The electronic structures of Heusler-type Fe2VAl-based alloys, n-type thermoelectric alloys Fe2VAl1-zXz(X = Si, Ge) and p-type one Fe2(V1-yTiy)Al, have been investigated by photoelectron spectroscopy with use of synchrotron radiation as an excitation photon source. Observed valence-band spectra of Fe2VAl agree quite well with the predicted density...