Hatice Hilal Kurt

Hatice Hilal Kurt
Gazi University · Department of Physics

Doctor of Philosophy

About

45
Publications
5,232
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227
Citations
Introduction
My research interests have been focused on the plasma-semiconductor systems and Infrared image converters.My studies also include Dc glow and townsend discharges in a microdischarge cell. Theoritical simulations have also used to find density of the electrons and mean electron energies of those electrons in the plasma cell.

Publications

Publications (45)
Poster
Full-text available
TOPICS The activity includes all interdisciplinary fields of engineering and natural sciences including mechanics, computer science and electrics. You can have an idea on the topical fields at http://icmece.org/scope-and-interests
Article
In this study, a zeolite-gas discharge system (ZGDS) with a microporous dielectric cathode was examined according to the physical properties of cold non-equilibrium plasma and discharge mode. The discharge emission intensity (DEI) in the UV, visible and near IR ranges (330–850 nm) generated by a planar Ar-driven ZGDS and the possibility of enhancin...
Chapter
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In this chapter, analytical and numerical techniques for the design and optimization of piezoelectric harvester (PH) systems are handled. In the frame of chapter, initially the approaches on how to start with an initial design will be explained. Then, the techniques to improve the starting design will be described. In the working tasks, especially...
Book
This book focuses on the progress in optoelectronic materials research and technologies, presenting reviews and original works on the theory, fabrication, characterization, and applications of optoelectronic materials. The chapters discuss preparation and properties of several optoelectronic materials, such as ZnO, SnO2, Zn1-XSnXO, BaTiO3, GaAs, Ga...
Article
Full-text available
The electrical characteristics of InP have been investigated experimentally and its electron density and electrical potential evaluated theoretically using the finite element method in a two-dimensional (2D) medium. Higher ionization rates were achieved at 39.99 kPa and 450 V, and the maximum electron density in the cell was found to lie around ~ 8...
Article
Full-text available
A progress update on the development of microporous dielectric materials for gas discharge systems, microelectronics, and energy storage devices is described herein. Experimental results on the dependence of the discharge emission intensity (DEI) on the current in ambient air and argon media for various values of the gas discharge gap dg (45–250 μm...
Conference Paper
Full-text available
In the present work, a new type granular core has been studied and implemented to a mechanically excited electromagnetic harvester. The system mainly consists of a linear fluid core and a surrounding winding. The system entirely depends on the vibration of the fluid core indicating a highly fluid dynamical feature, whereas the winding component of...
Article
Full-text available
In this work, the temperature dependent electret state (ES) effect on the resistivity of microporous clinoptilolite was studied. The current–voltage characteristics with an unusual hysteresis in the clinoptilolite wafers were measured for different temperatures in the range of 30–260°C. After the application of a constant electric field of 2 kV cm⁻...
Article
Full-text available
CdS has a wide range of applications for explorations of its optical and electrical behaviors. A microplasma cell with a CdS electrode has been constructed. The measurements on discharge currents under various gas pressures, interelectrode distances and excitation voltages have been studied theoretically and experimentally. The 2D electron densitie...
Article
Full-text available
Significant improvement has been carried out in the field of the II–VI group semiconductor device technology. Semiconductors based on the II–VI group are attractive due to their alternative uses for thermal imaging systems and photonic applications. This study focuses on experimental work on the optical, electrical and structural characterization o...
Article
Full-text available
This work reports on the electrical and optical characterization of the atmospheric pressure glow discharge regimes for different semiconductor electrodes made of GaAs, GaP and ZnSe. The discharge cell is driven by DC feeding voltages at a wide pressure range of 0.66–120 kPa in argon and air media for different interelectrode gaps. The discharge ph...
Article
The objective of this study is to explore the electrical and optical characterization of zinc selenide (ZnSe) and zinc sulfide (ZnS) semiconductors as cathode materials of an Infrared image converter. The experiments and simulations have been performed for various converter parameters such as pressure, breakdown voltage, interelectrode distance and...
Article
Full-text available
The aim of this study is to examine the electrical and optical comparative analysis of semi-insulating GaAs and GaP photoconductive electrodes in an infrared converter system with a resistivity of >10⁷ Ω cm for the same interelectrode distance d and gas pressure p experimentally and theoretically, when the discharge cell has been filled by argon. T...
Article
Full-text available
The energy distributions and electromagnetic emissions of deuterium ions and electrons in an inertial electrostatic confinement (IEC) unit are reported for low and moderate magnetic field cases. The IEC device has a central wire system inside the grid system of the chamber for the production of the azimuthal magnetic field. The real-time simulation...
Article
Full-text available
We present gas discharge phenomena in argon and air media using a gallium phosphide (GaP) semiconductor and metal electrodes. The system has a large-diameter (D) semiconductor and a microscaled adjustable interelectrode gap (d). Both theoretical and experimental findings are discussed for a direct-current (dc) electric field (E) applied to this str...
Article
Full-text available
A plasma device with large diameter and short interelectrode distance has been designed and implemented. Theoretical modeling and simulations have been carried out for different interelectrode distances, and experimental results obtained under different pressures p, both with argon atmosphere. The device produces direct-current (dc) discharges in t...
Article
Full-text available
This paper explores the relation of the nonlinearities of displacement and velocity dynamics with the power of a piezoelectric pendulum under a periodic magnetic excitation. Initially, the theoretical formulation including the mechanical, magnetic and electrical terms is realized. Then a simulation study has been done by using the theoretical formu...
Article
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In this paper experimental and analytical explorations of an R-2L-2D circuit were carried out. The responses from the ordinary em RL-Diode and R-2L-2D circuits were characterized and compared for a wide parameter region. As a new circuit, R-2L-2D has an additional inductor and a diode. The circuit had diierent attractors compared with the ordinary...
Article
The complicated structure of photodetectors, which enable to convert IR radiation to the VIS one has not been clarified with all aspects; in fact, the use of different semiconductors and the effects of different plasma parameters to the IR enhancement and hysteresis phenomena has not been understood, yet. Within this context, the optoelectronic pro...
Article
The hysteresis and corresponding memory effect were reported in an IR image converter from a modified configuration with contact-free photodetector under various operating conditions for the first time to our knowledge. It was considered that the memory effect based on hysteresis plot in the modified configuration was apparently due to charge trapp...
Article
Full-text available
The explorations on the surface qualities of these materials become very important for the preparation of solar cells in PVs. Therefore a nondestructive optical testing method is proposed in this paper by using GaAs PV materials. The proposed method uses a gas ionization system (IS) together with an optical measurement tool powered by the fractal d...
Article
The Townsend discharge mechanism has been explored in a planar microelectronic gas discharge device (MGDD) with different applied voltages U and interelectrode distance d under various pressures in air. The anode and the cathode of the MGDD are formed by a transparent SnO2 covered glass and a GaAs semiconductor, respectively. In the experiments, th...
Article
In this paper we experimentally discuss the nitrogen and air plasma effect on the transport properties of semi-insulating (SI) GaAs photocathode in the semiconductor gas discharge structure. Discharge gap is filled with various pressures of air and nitrogen at different gap spacing d and cathode diameter D. Under the same discharge conditions, whil...
Article
Full-text available
Townsend-type discharge in a modified gas discharge cell with coupled narrow gaps between a high-resistivity semiconductor plate and two planar electrodes is experimentally studied in the range of gas pressure 28-352 torr for various interelectrode distances (d<sub>1</sub> = 50 μm, d<sub>2</sub> = 50 - 320 μm). The effect of various diameters on th...
Article
Current and discharge light emission (DLE) behaviors are studied experimentally in neon as a function of pressure p (30- 760 Torr), interelectrode distances d(330 μm-530 μm) and diameter D (9 mm -18 mm) of the cathode in a semiconductor gas discharge electronic device (SGDED) with GaAs cathode. The discharge features of neon are investigated under...
Article
Full-text available
Nonlinear electrical transport of semi-insulating (SI) GaAs detector in semiconductor-gas discharge IR image converter (SGDIC) are studied experimentally for a wide range of the gas pressures (p = 28–55 Torr), interelectrode distances (d = 445–525 μm) and inner electrode diameters (D = 12–22 mm) of photocathode. The destabilization of homogeneous s...
Article
Electrical instability in semi-insulating (SI) GaAs plates of the semiconductor gas-discharge structure (SGDS) is studied experimentally in air and neon as a function of pressure, interelectrode distance, and cathode area diameter. While being driven with a stationary voltage, it generates current and discharge light-emission instabilities with dif...
Article
Full-text available
A 2-D computer simulation of a coaxial plasma device depending on the conservation equations of electrons, ions and excited atoms together with the Poisson equation for a plasma gun is carried out. Some characteristics of the plasma focus device (PF) such as critical wave numbers a c and voltages U c in the cases of various pressures Pare estimated...
Article
The memory effect in the planar semiconductor gas discharge system at different pressures (15–760 Torr) and interelectrode distances (60–445 µm) was experimentally studied. The study was performed on the basis of current–voltage characteristic (CVC) measurements with a time lag of several hours of afterglow periods. The influence of the active spac...
Article
In a semiconductor gas discharge structure with diameters much larger than an inter-electrode distance, the effects of different parameters (i.e. electrode separation, gas pressure, diameter of the GaAs photodetector, etc.) on electrical breakdown and current oscillations were studied. Non-stationary and non-homogeneous states are generated in the...
Article
Full-text available
Nonlinear electrical transport processes in a semiconductor-gas discharge structure with semi-insulating GaAs are studied for a wide range of gas pressures, interelectrode distances and different diameters of the photocathode areas. A primary destabilization of homogeneous state observed in a planar dc-driven structure is due to nonlinear transport...
Article
Nonlinear transport of a semi-insulating (SI) GaAs photodetector in a semiconductor gas discharge structure (SGDS) is studied experimentally for a wide range of gas pressures p, interelectrode distances d and different diameters D of the detector areas. While being driven with a stationary voltage, the system generates current and discharge light e...
Article
A planar ionization system for rapid visualization and recording the resistance inhomogeneity and photoconductivity distribution in a chalcopyrite-type semiconductor (CuInSe2) copper-indium-diselenide film is studied. A part of the discharge energy is transferred to the electrodes of the system by the bombardment of the electrode surface due to an...
Article
The electrical conductivity of a thin gas discharge gap (d = 60 µm) filled with atmospheric air at 60 Torr pressure and room temperature was investigated. Current–voltage characteristics of the device when both the electrodes are metals and when one of the electrodes is a high resistivity GaAs semiconductor were measured. It is shown that in the de...
Article
Electrical instability in a SI GaAs plates of the semiconductor gas discharge gap system (SGDGS) is studied experimentally in a wide range of the gas pressures, interelectrode distances and different diameters of the cathode areas. While being driven with a stationary voltage, it generates current and discharge light emission (DLE) instabilities wi...
Article
The current instability in a planar gas discharge system is studied experimentally in a wide range of the gas pressure, p (44–550 Torr), interelectrode distance, d (45–330 µm), and diameter, D (5, 9, 12, 18, 22 mm), of the electrode areas of the semiconductor cathodes. While being driven with a stationary voltage, it generates current instabilities...
Article
Full-text available
A nondestructive method is suggested for the analysis of the quality and resistivity inhomogeneity of semiconductor plates in an ionization system with a SI GaAs semiconductor plate. At the same time, a device for rapid visualization and recording the resistance inhomogeneity and photoconductivity distribution throughout the bulk material in high-r...
Article
Gas breakdown in air in a planar gas discharge system was studied experimentally at various distances L between the electrodes and different diameters R of the electrode areas of the semiconductor cathodes. The cathode was irradiated on the back-side with light in a particular wavelength range that was used to control the photoconductivity of the m...
Article
This paper analyses the spatial homogeneity of a large-diameter (100mm) photodetector surface realized by recording the spatial distribution of the gas discharge light emission (OLE) in an ionization-type infrared image converter (ITIIC) with a GaAs photodetector. Analysis of the surface homogeneity is determined by the fractal dimension of the gas...
Article
This work studies the light emission patterns associated with the spatial modulation of the transversal distribution of the current density in a converter cell with a GaAs semiconductor cathode. Such light emission exhibits spatial structures of current filaments depending on the feeding voltage, illumination intensity, gas pressure and the surface...
Article
Full-text available
This paper analyses the image homogeneity realized by recording the spatial distribution of the gas discharge light emission in an ionization-type infrared (IR) image converter with a gallium arsenide semiconductor photodetector. The image of the photodetector material which contains the internal inhomogeneities is studied thoroughly at the optimum...

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Project
Conference will be organized in Sarajevo, Bosnia-Hersegovina on 27-30 August 2017. The ISBN registered Proceedings will be published electronically. In addition, many SCI- and SCOPUS indexed journals will publish the selected papers. It is open to special session proposals. See the details at www.ewres.info