Hasan A. Hadi

Hasan A. Hadi
Mustansiriyah University · Physics

Ph.D

About

41
Publications
4,629
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91
Citations
Additional affiliations
September 1995 - December 2004
Yarmouk University
Position
  • Co -Research
October 1992 - February 2017
Al-Mustansiriya University
Position
  • Professor (Assistant)

Publications

Publications (41)
Article
Full-text available
In this paper, formation of a nano-crystaline porous silicon layer on n-type and P-type crystalline Si substrates prepared by the electrochemical etching and photo-electrochemical etching techniques (in order to fabricate heterojunctions photodetector) has been studied. The fabricated Al/PS/n-Si/Al photodetector has responsivity to white light high...
Article
Full-text available
A heterojunction n-Si/PSi/Al was fabricated for use in UV-visible photodetector operating at room temperature. Al/PSi/n-Si heterojunction were made by photo electrochemical etching technique (PECE) layer onto mono crystalline n-Si and using thermal evaporation technique to deposited Al thin film on n-Si substrate and porous silicon layer. The effec...
Article
Full-text available
In this work, nanocrystalline porous silicon (PSi) was prepared by the photo-electrochemical etching (PECE) technique. A comparison study between the optoelectronic properties of double junctions Ni/PSi/c-Si and Cd/PSi/c-Si photodetectors is reported. The Ni and Cd thin films were deposited on the porous silicon layers by the thermal evaporation te...
Article
Full-text available
Abstract: We have proposed for the first time the energy band diagram of fluorine doped tin oxide FTO/ porous silicon PSi/ n-Si heterostructure prepared by spray pyrolysis technique and laser assist-electrochemical etching ECE. The band line-up of the heterojunction was constructed from the electrical and optical properties of FTO and porous silico...
Article
This study focused on the fabrication and characterization of CuS/porous Si heterojunction photodetector prepared by deposition of chemically sprayed CuS film on the porous silicon substrate prepared by anodization method. The optical and structural of CuS film and porous silicon PSi layer were investigated using x-ray diffraction, scanning electro...
Preprint
Full-text available
In this report, laser assisted in electrochemical etching technique PECE to prepare porous silicon layers under the constant conditions was used. To confirm the possibility of using different wavelengths of laser light to control the thickness of structures and porosity of silicon layers, a scanning electron microscope and weight measurements techn...
Article
Full-text available
Copper sulfide C S films were deposited on substrate glass by spray pyrolysis method from mixture of an aqueous solutions of copper chloride dehydrate (CuCl 2 ⋅2H 2 O) and thiourea (CH 4 N 2 S) in proper concentration at temperature of. X-ray diffraction (XRD) analysis of the films shown the films have amorphous structure. In this study, the influe...
Article
Full-text available
Novel doped polystyrene (PS)/porous silicon (PSi) heterojunction photodetector prepared by solution cast and electrochemical techniques is proposed here. The structural and optical properties of polystyrene film and porous silicon surface were investigated using X-ray diffraction (XRD), scanning electron microscope, Fourier transformed infrared (FT...
Article
Full-text available
In this paper, the structural properties of porous silicon layer PSL were reported. Photo-assisted (laser) electrochemical etching PECE technique used to fabrication PSL from n-type wafer silicon as a function of etching time. Optical microscopy OM image is confirmed that the surface topography of porous silicon layer formation was a mud-like struc...
Article
Full-text available
This paper presents the fabrication and characterization of the different types of porous silicon PS (n-type and p-type) were used as a semiconductor to modifying Schottky contacts (Al/p-PS, Al/n-PS) and ohmic contact (Al/p-Si, Al/n-Si) respectively. Porous layer formed by electrochemical and photo-electrochemical etching. Barrier height, ideal fac...
Article
Full-text available
We have studied the dependence of photodetector photocurrent on incident power density of light with anodization current and time. The fabrication of Al/PS/p-Si photodetector heterojunction PDH by electrochemical etching method ECE and semi-transparent Al films in thickness range of 80 nm are deposited by thermal evaporation on porous silicon layer...
Article
Full-text available
In this work, we study the structure, electronic properties and electronic spectra of Coumarin 102 (C102) dissolved in ethanol as an experimental-theoretical investigation. The various properties of the ground and excited electronic states of coumarins 102 using density functional theory (DFT) and time-dependent density functional theory (TDDFT) wa...
Article
Full-text available
In This paper, electrochemical etching teqniques was using to formation of nano crystalline porous silicon layer on p-type Si substrates. Measurement of capacitance – voltage characteristics at various etching time and current densities were used for calculated built in voltage and type of heterojunction. The built in voltage values were decreased...
Article
Full-text available
In this work, porous silicon layers PS were fabricated on p-type crystalline silicon wafers using electrochemical etching ECE process. Al films were deposited onto porous layer /Si wafers by thermal evaporation to form rectifying junction. An investigation of the dependence on applied etching time to formed PS layer was studied. Effect etching time...
Article
Full-text available
An experimental-theoretical investigation have been presented to exploring phenomena of mirror effect. The Polyethylene Terephthalate (PET) material is chosen to be a case study throughout this work. Where the scanning electron microscope (SEM) is used for executing the experiments. Attention has been focused on determination of the number of elect...
Article
Full-text available
In the present work, we have measured specific activity concentrations in ten tap water samples for selected regions in Thi-Qar governorate by using high purity germanium (HPGe) detector. The results have shown that, the specific activity, for 238 U was ranged from (0.65±0.8 Bq/kg) in AL-Nasir region to (1.32±0.7.8 Bq/kg) in AL-Refai region, for 23...
Presentation
Full-text available
Our objective is overview about the fabrication process of porous silicon and the special emphasis on the use of porous silicon in the applications of optoelectronic devices such as photo-detectors light-emitting diode and the gas sensors.
Conference Paper
Full-text available
Al/PS/p-Si/Al photodetector PD was fabricated and based on porous silicon PS layer prepared by electrochemical-etching technique ECE. The effect of increasing etching current density on the figure of merit of Al/PS/p-Si was discussed. The spectral responsivity Rλ of PD was more than 0.60A/W at 50mA/cm2 etching current density in near visible wavele...
Article
Full-text available
In this paper porous silicon layer was papered by photo electrochemical etching PECE with laser assisted and the FTO thin film deposited on porous silicon layer substrates by spray pyrolysis technique. To study the effect of gamma radiation on electrical and photocurrent characteristics of fluoride tin oxides/porous silicon/monocrystalline silicon...
Article
Full-text available
We report on the fabrication and characterization of MSM photodetector. We investigated the surface morphological and the structural properties of the porous silicon by optical microscopy, atomic force microscope (AFM) and X-ray diffraction. The metal–semiconductor–metal photodetector were fabricated by using Sb as Schottky contact metal.The juncti...
Article
In this paper, we present the fabrication of Schottky devices by the photo electrochemical etching of nano crystalline silicon layer on single-crystal silicon substrates. Porous silicon layers have been prepared from n-type silicon wafers of (111) orientation. XRD results revealed that the porous layer was nanocrystalline in nature. We have estimat...
Article
Full-text available
This paper presents a study of a double junction Sn/PS/p-Si/Al heterojunction device which was fabricated by growing using thermal evaporation deposition of Sn and Al thin films onto porous silicon PS and p-Si substrate. PS layer is prepared by electrochemical etching ECE using different etching current densities. The morphology of the porous silic...
Article
Full-text available
In this paper, investigations of structure and morphology properties of n and p-type porous silicon layer prepared by Photo-electrochemical etching (PECE) and electrochemical etching (ECE) were demonstrated respectively. The atomic force microscopy (AFM), x-ray diffraction (XRD) and optical microscopy investigations showed the influence of the subs...
Article
Full-text available
Porous silicon layers were fabricated on p-type crystalline silicon wafers using electrochemical etching ECE process. An investigation of the dependence on applied current density to formed PS layer was made. Porosity of the porous silicon layer and thickness were determined gravimetrically. Increasing the etching current density led to increase th...
Article
Full-text available
In this paper, formation of a nanostructure semi transparence fluoride tin oxides (FTO) by spray pyrolysis technique on porous silicon PS layer. Porous silicon PS layer was prepared by anodization of p-type silicon wafers to fabricate of the UV- Visible Fluoride-doped tin oxide /Porous silicon /p-Si heterojunction photodetector. Optical properties...
Article
Full-text available
This paper reports the influence of the etching time on structural characteristics of porous silicon manufactured by electrochemical etching (ECE) anodization p-type silicon wafers. Micro and nano-structural features of the samples are mainly investigated by XRD and AFM techniques. The morphological properties of PS layer such as nano-crystalline s...
Article
Full-text available
This paper presents a study of Sn/PS/p-Si heterojunction device which is fabricated by growing Sn thin film onto p-type porous Si substrate by using thermal evaporation deposition and electrochemical etching (ECE) in crystalline p-Si method. Effect etching current density on the morphology of the porous silicon surface is checked using atomic force...
Article
In this paper, formation of microstructures porous silicon layer (PS) on c-Si substrate p-type with resistivity’s10 Ω.cm which was prepared by the electrochemical etching (ECE) is presented. The etching current densities (40 and 50 mA.cm-2) were used in the electrochemical etching procedure leading to the formation of 1.08 µm and 1.34µm thick porou...
Presentation
Full-text available
An Influence of Etching Current Density of Porous Silicon on Optoelectronic Properties of PS/p-Si/Al Heterojunction as Visible Photodetector Prepared by ECE
Article
Full-text available
Porous silicon (PS) has been fabricated by Photo-electrochemical etching. Porous silicon was anodized on n-type Si in light using a current density of 20mA/cm2 for 10 min. The porous structure formation was confirmed using XRD and AFM studies. The root mean square (RMS) roughness of the Porous silicon layer is found to be around 47.5 nm and the ten...
Conference Paper
Full-text available
Photodetector Sn/PS/p-Si was fabricated based on porous silicon PS layer prepared by electrochemical-etching technique ECE of p-type silicon wafers. The porous layer formation was confirmed by AFM and SEM studies. Surface analysis by atomic force microscopy AFM showed that the morphology of the porous layer is nanostructures. The photodetector has...
Article
Full-text available
Porous silicon (PS) has been fabricated by Photo-electrochemical etching. Porous silicon was anodized on n-type Si in light using a current density of 20mA/cm2 for 10 min. The porous structure formation was confirmed using XRD and AFM studies. The root mean square (RMS) roughness of the Porous silicon layer is found to be around 47.5 nm and the ten...
Article
Full-text available
In this theoretical research investigation compares has been carry out for objective and projector optical properties for asymmetrical double polepiece magnetic lenses under magnetic unsaturated condition which whose axial magnetic field distribution representing well known models in electron optics have same pole shaped such as Glaser’s Bell-s...
Article
Full-text available
In this study, investigations of structural properties of n-type porous silicon prepared by laser assisted-electrochemical etching were demonstrated. The Photo- electrochemical Etching technique, (PEC) was used to produce porous silicon for n-type with orientation of (111). X-ray diffraction studies showed distinct variations between the fresh sili...
Article
Full-text available
In this work, Electrochemical Etching, (ECE) and Photo Electrochemical Etching, (PECE) were used to produce porous silicon for p-type and n-type (111) orientation. The Root-mean-square (RMS) surface roughness is a commonly accepted parameter to describe surface by imaging techniquesAtomic Force Microscopic (AFM) was used to analyse the surface samp...
Conference Paper
Full-text available
Abstract: In this paper Al/PS/n-Si/ Al photodetector has been fabricated from porous silicon (PS) on n-type (111 ). Porous silicon (PS) layer was made on mono-crystalline n-type Si using anodic etching in aqueous HF. DC electrical properties of porous silicon structures, formed with electrochemical anodisation assisted with laser light in HF acid s...
Research
CW Nd:YAG Laser heating of silicon are modeled theoretically and the heat diffusion equations solved numerically for estimation of the temperature rise induced during these processes. The thermal properties of the substrate silicon is assumed variations in the case of CW Laser heating. Our results at estimation are agreement with experimental value...
Article
Full-text available
CW Nd:YAG Laser heating of silicon are modeled theoretically and the heat diffusion equations solved numerically for estimation of the temperature rise induced during these processes. The thermal properties of the substrate silicon is assumed variations in the case of CW Laser heating . Our results at estimation are agreement with experimental...

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Project (1)
Project
1. x-ray 2. Dark (i-v) and (c.v) 3. Responsivity 4. quantum efficiency