
Gurukrishna Kaleyathodi- Ph.D (Electronic materials)
- Postdoctoral Researcher at Indian Institute of Technology Kanpur
Gurukrishna Kaleyathodi
- Ph.D (Electronic materials)
- Postdoctoral Researcher at Indian Institute of Technology Kanpur
Currently working on PVD grown epitaxial metal oxide heterostructures for memory applications
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17
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Introduction
Dr. Gurukrishna is an IPDF of IIT Kanpur. His areas of research include nanofabrication of epitaxial heterostructures, memristor based in – memory computing, ferroic ultrathin films, thermoelectric materials and devices, transport phenomena in crystalline solids and radiation induced electronic property modulation. Currently he is serving as a peer-reviewer in WoS indexed journals from Nature portfolio, Elsevier and Springer Nature.
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Publications
Publications (17)
To investigate the thermoelectric properties, we have attempted to tune selenium content in Cu2SnSe3-δ (−0.04 ≤ δ ≤ 0.1) compounds synthesized via the conventional solid-state reaction. Electrical and thermal properties are presented in the low and near room temperature regime (10–350 K). The lowest electrical resistivity is observed for the compou...
A detailed investigation on the temperature dependent electrical properties of Cu 2 SnSe 3 system, synthesized via conventional solid-state reaction at different sintering temperatures are presented in this communication. All the samples exhibit degenerate semiconducting nature at low temperatures. The existence of small polarons and hence electron...
The work presented in this paper demonstrates an experimental path to improve the performance of a screen-printed flexible thermoelectric generator through optimization of leg materials, geometrical and structural parameters of the leg, and the viscosity of screen-printed ink. A thin and porous screen-printed leg structure improves the Seebeck coef...
The Metal to Insulator Transition (MIT) in materials, particularly Vanadium Dioxide (VO2), has garnered significant research interest due to its potential applications in smart windows, memristors, transistors, sensors, and optical...
VO2 stands out as a unique material manifesting intrinsically coupled electronic and phase transitions. The novel electric field-activated phase transition behaviours, along with the high-resistance change rate, ultrarapid response, and low-power consumption in VO2 memristors, provide a nonlinear dynamical response to input signals, as recommended...
Herein, the impact of exposing the perovskite compound Pr 0.5 Sr 0.5 MnO 3 to oxygen plasma is explored by comparing the structural and transport properties of the exposed samples to those of the unexposed ones. The Pr is oxidized to PrO 2 in the investigated samples due to plasma exposure. The alterations in the transport properties can be linked...
The influence of sintering temperature on the thermoelectric (TE) transport of BiCuSeO is reported in the present work, with an aim to optimize the processing conditions for higher TE transport. BiCuSeO samples were synthesized at four different sintering temperatures, viz., 673 K, 773 K, 873 K, and 973 K. A non-degenerate type of conductivity is o...
To investigate the effect of cation disorders to modulate thermoelectric performance of Cu3SbSe4 system, we attempted to tune copper content in Cu3+xSbSe4 (x = -0.06, -0.04, 0, 0.04, 0.06, and 0.08) system synthesized via solid-state reaction route. Considering the asymmetry in charge and phonon transport properties, intentional deviations from the...
By using the solid-state reaction approach, composite polycrystalline samples of (Bi 0.98 In 0.02 ) 2 Te 2.7 Se 0.3 / x %Bi 2 Se 3 were created with varying amounts of Bi 2 Se 3 , ( x = 5%, 10%, 15%, and 20%). The hexagonal crystal structure of the composite was revealed by x-ray diffraction (XRD) with a space group of R $$\overline{3 }$$ 3 ¯ m . T...
We herein report on compositing highly conductive GdH2 with BiCuSeO, with an aim to modulate the electronic transport and the nature of conductivity in the high-temperature regime. The incorporation of GdH2 as a minor matrix in BiCuSeO, as confirmed by structural studies, has considerably enhanced electrical conductivity in the system, thereby demo...
The modification in the Cu 2 Se thermoelectric system by electron beam irradiation has been carried out in this work. Samples were prepared using the solid-state reaction technique. The prepared samples were irradiated with various energy dosages viz. 50, 100, and 150 kGy. XRD studies reveal that the synthesized samples crystallized in a monoclinic...
We investigated the synthesis protocols of the pure and Pb-doped bulk polycrystalline Cu3Sb1-xPbxSe4 (0 ≤ x ≤ 0.04) system and studied their crystallographic and thermoelectric properties intending to reach a high figure of merit (ZT). The solid-state reaction method under a 10−5 Torr vacuum was employed to synthesize the pristine and doped samples...
Polycrystalline composite samples of (Bi0.98In0.02)2Se2.7Te0.3/Bi2Te3 with different concentrations of Bi2Te3 such as 5%,10%,15% and 20% were prepared by the solid-state reaction technique. The X-Ray diffraction analysis has shown the hexagonal composite crystal structure with space group of R3¯\documentclass[12pt]{minimal} \usepackage{amsmath} \us...
We present report on modulating thermoelectric transport in Cu2SnSe3 system via irradiating high-energy electrons of energy of about 8 MeV. Electrical transport is investigated at near room to mid-temperature regime (300–700 K). A smooth transition from degenerate to non-degenerate type of conductivity is observed in all the samples, which indicate...
The substitution of Cu by Mn in the Cu2-xMnxSnSe3 (0 ≤ x ≤ 0.20) system is presented with an objective to optimize the thermal transport and analyse thermoelectric behaviour in the low and near room temperature regime (10–350 K). The existence of hole-like small polarons as thermally activated carriers, mediating the p-type electrical transport at...