Guilherme Torelly

Guilherme Torelly
Pontifícia Universidade Católica do Rio de Janeiro · Department of Electrical Engineering (ELE)

Doctor of Engineering

About

14
Publications
1,326
Reads
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29
Citations
Introduction
Professor at the Pontifical Catholic University of Rio de Janeiro (PUC-Rio) since 2023, working at the Semiconductor's Laboratory (LabSem) of the Center of Telecommunication Studies (CETUC).
Additional affiliations
September 2020 - present
Instituto Militar de Engenharia (IME)
Position
  • PostDoc Position
Description
  • Researcher at the Biomaterials Laboratory, working on the development of new technology to aid health professionals working on the front line of the COVID-19 pandemic and future pandemics.
March 2018 - August 2019
Atomic Energy and Alternative Energies Commission
Position
  • PhD Student
Description
  • Optical semiconductor characterization using a streak-camera to measure the time-resolved photoluminescence in the ps time scale.
July 2012 - December 2012
Fives Cinetic Automation
Position
  • Software Engineer
Description
  • Development and debug of PLC software for controlling automotive industry production lines.
Education
March 2016 - January 2020
Pontifícia Universidade Católica do Rio de Janeiro
Field of study
  • Electrical Engineering with emphasis in Nanotechnology
July 2014 - February 2016
Pontifícia Universidade Católica do Rio de Janeiro
Field of study
  • Master of Science in Electrical Engineering with emphasis in Nanotechnology
March 2008 - June 2014
Pontifícia Universidade Católica do Rio de Janeiro
Field of study
  • Electrical Engineering with emphasis in Electronics and Computers

Publications

Publications (14)
Article
Full-text available
Introduction The consensus among researchers is that early failure of dental implants is due to the lack of primary stability and compressive stress on the peri-implant bone that exceeds the physiological tolerance. Objective The objective of this work is to propose a new methodology to quantify bone stress during dental implant insertion and to c...
Article
Full-text available
We review recent studies of cavity switching induced by the optical injection of free carriers in micropillar cavities containing quantum dots. Using the quantum dots as a broadband internal light source and a streak camera as detector, we track the resonance frequencies for a large set of modes with picosecond time resolution. We report a record-f...
Article
Full-text available
We report on ultrafast all-optical switching experiments performed on pillar micro-cavities containing a collection of quantum dots (QDs). Using QDs as a broadband internal light source and a detection setup based on a streak camera, we track in parallel the frequencies of a large set (>10) of resonant modes of an isolated mi-cropillar, during the...
Preprint
Full-text available
We report on the generation of few-ps long spontaneous emission pulses by quantum dots (QDs) in a switched optical microcavity. We use a pulsed optical injection of free charge carriers to induce a large frequency shift of the fundamental mode of a GaAs/AlAs micropillar. We track in real time by time-resolved photoluminescence its fundamental mode...
Preprint
Full-text available
We report on the generation of few-ps long spontaneous emission pulses by quantum dots (QDs) in a switched optical microcavity. We use a pulsed optical injection of free charge carriers to induce a large frequency shift of the fundamental mode of a GaAs/AlAs micropillar. We track in real time by time-resolved photoluminescence its fundamental mode...
Article
InAs QDs embedded in an AlGaAs matrix have been produced by MOVPE with a partial capping and annealing technique to achieve controllable QD energy levels that could be useful for solar cell applications. The resulted spool-shaped QDs are around 5 nm in height and have a log-normal diameter distribution, which is observed by TEM to range from 5 to 1...
Article
Full-text available
An investigation of ultra-thin InAs layers deposited on GaAs is carried out combining theoretical calculations with results of high-resolution transmission electron microscopy, atomic force microscopy and photoluminescence. Five period InAs/GaAs epilayers were grown by metalorganic vapor phase epitaxy at a very low growth rate, with different InAs...
Conference Paper
Full-text available
The formation of self-assembled InAs quantum dots is investigated as the growth time increases from 3.6 to 12 seconds at a low growth rate. The morphological evolution from a rough surface at a short length scale to an extended 2D InAs flat area, and finally to the 3D InAs islands is followed using atomic force microscopy, photoluminescence and tra...
Article
Full-text available
Apresentamos técnicas de imageamento no infravermelho, que possibilitam ver no escuro e medir as temperaturas de um corpo ou de um ambiente. Alguns experimentos são propostos com o objetivo de auxiliar a visualização desse tipo de radiação, que está fora da faixa que conseguimos enxergar, e, por isso, dizemos invisível. O grande diferencial desses...

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