Grzegorz Sęk

Wrocław University of Science and Technology | WUT · Department of Experimental Physics

Electron beam lithography is a standard method for fabricating photonic micro and nanostructures around semiconductor quantum dots (QDs), which are crucial for efficient single and indistinguishable photon sources in quantum information processing. However, this technique is difficult for direct 3D control of the structure shape, complicating the d...

Solid-state quantum light sources based on semiconductor quantum dots (QDs) are increasingly employed in photonic quantum information applications. Especially when moving towards real-world scenarios outside shielded lab environments, the efficient and robust coupling of nanophotonic devices to single-mode optical fibers offers substantial advantag...

The demand for advanced photonics technology is increasing rapidly, fueled by the necessity for high-performance and cost-effective optical information processing systems extending into the quantum domain. Silicon, benefiting from its mature fabrication processes, stands as an ideal platform. However, its inherent indirect bandgap leads to ineffici...

Electron beam lithography is a standard method for fabricating photonic micro and nanostructures around semiconductor quantum dots (QDs), which are crucial for efficient single and indistinguishable photon sources in quantum information processing. However, this technique is difficult for direct 3D control of the structure shape, complicating the d...

Electron beam lithography is a standard method for fabricating photonic micro and nanostructures around semiconductor quantum dots (QDs), which are crucial for efficient single and indistinguishable photon sources in quantum information processing. However, this technique is difficult for direct 3D control of the structure shape, complicating the d...

Electron beam lithography is a standard method for fabricating photonic nanostructures around semiconductor quantum dots (QDs), which are crucial for efficient single and indistinguishable photon sources in quantum information processing. However, this technique lacks direct 3D control over the nanostructure shape, complicating the design and enlar...

InAsxP1–x quantum dots (QDs) in InP nanowires (NWs) have been realized as a platform for emission at telecom wavelengths. These QDs are typically grown in NWs with the wurtzite crystal phase, but in this case, ultrathin diameters are required to achieve defect-free heterostructures, making the structures less robust. In this work, we demonstrate th...

Quantum information processing with photons in small-footprint and highly integrated silicon-based photonic chips requires incorporating non-classical light sources. In this respect, self-assembled III-V semiconductor quantum dots (QDs) are an attractive solution, however, they must be combined with the silicon platform. Here, by utilizing the larg...

We report on the deterministic fabrication of high-performance hybrid circular Bragg gratings (hCBGs) with embedded InAs/GaAs quantum dots and their direct and permanent fiber-pigtailing to single mode fibers. The devices exhibit spontaneous emission lifetimes <50ps resulting in experimental Purcell factor well beyond 15. The fiber-pigtailed device...

Tuning GaAs-based quantum emitters to telecom wavelengths makes it possible to use existing mature technology for applications in, e.g., long-haul ultrasecure communication in fiber networks. A promising method redeveloped recently is to use a metamorphic (In,Ga)As buffer that redshifts the emission by reducing strain. However, the impact of such a...

So far, successful focused ion beam (FIB) based fabrication of photonic structures with quantum dots (QDs) has been limited to cases with above 1 µm thick cap, usually in a form of a distributed Bragg reflector of a vertical cavity, which simultaneously protects the active region from the destructive influence of the ion beam. Here, we propose opti...

The symmetry of nanostructures forming an active part of optoelectronic devices severely impacts their properties. It is crucial for the design of polarization-insensitive semiconductor optical amplifiers or sources of entangled photon pairs. We show how quantum dot symmetry can be measured, including atomic force microscopy and polarization-resolv...

We present an optical spectroscopic study of InGaAs/AlInAs active region of quantum cascade lasers grown by low pressure metal organic vapor phase epitaxy combined with subwavelength gratings fabricated by reactive ion etching. Fourier-transformed photoluminescence measurements were used to compare the emission properties of structures before and a...

We characterized optically In0.37Ga0.63As/GaAs quantum dots and Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflector based cavities. The main mechanisms of quantum dots photoluminescence quenching were identified. We measured reflectivity spectra of the cavity structure which allowed us to verify the proposed layer design and its fabrication by co...

Tuning GaAs-based quantum emitters to telecom wavelengths makes it possible to use the existing mature technology for applications in, e.g., long-haul ultra-secure communication in the fiber networks. A promising method re-developed recently is to use a metamorphic InGaAs buffer that redshifts the emission by reducing strain. However, the impact of...

We demonstrate monolithic high contrast gratings (MHCG) based on GaSb/AlAs0.08Sb0.92 epitaxial structures with sub-wavelength gratings enabling high reflection of unpolarized mid-infrared radiation at the wavelength range from 2.5 to 5 µm. We study the reflectivity wavelength dependence of MHCGs with ridge widths ranging from 220 to 984 nm and fixe...

Herein, it is demonstrated that optical excitation of InAs quantum dots (QDs) embedded directly in an InP matrix can be mediated via states in a quaternary compound constituting an InP/InGaAlAs bottom distributed Bragg reflector (DBR) and native defects in the InP matrix. It does not only change the carrier relaxation in the structure but could als...

We demonstrate comprehensive numerical studies on a hybrid III-V/Si-based waveguide system, serving as a platform for efficient light coupling between an integrated III-V quantum dot emitter to an on-chip quantum photonic integrated circuit defined on a silicon substrate. We propose a platform consisting of a hybrid InP/Si waveguide and an InP-embe...

In the present work, we focus on the development and optimization of the photonic structures fabrication with (In, Ga)As/GaAs quantum dots as an active part. Such structures offer the emission in the application-relevant range of the 2nd telecommunication window in view of obtaining efficient light collection, which is a critical requirement of pra...

Semiconductor nanostructures of various material systems are heavily researched for information processing applications as single-photon sources for communication and as a spin memory for storage. Here, exciton, electron, and hole properties in single InAs/InP asymmetric quantum dots (quantum dashes) emitting in a broad spectral range from 0.8 to a...

We demonstrate comprehensive numerical studies on a hybrid III-V/Si-based waveguide system, serving as a platform for efficient light coupling between an integrated III-V quantum dot emitter to an on-chip quantum photonic integrated circuit defined on a silicon substrate. We propose a platform consisting of a hybrid InP/Si waveguide and an InP-embe...

Lasers, light-emitting diodes, and other optoelectronic devices employing InAs/InP quantum dots (QDs) instead of quantum wells (QWs) as their active parts benefit from the quasi-zero-dimensional (0D) density of states while maintaining the emission at the communication-relevant range of 1.55μm. However, for certain application purposes, the substit...

Optical trapping has been proven to be an effective method of separating exciton-polariton condensates from the incoherent high-energy excitonic reservoir located at the pumping laser position. This technique has significantly improved the coherent properties of exciton-polariton condensates, when compared to a quasi-homogeneous spot excitation sch...

We present the optical characterization of GaAs-based InAs quantum dots (QDs) grown by molecular beam epitaxy on a digitally alloyed InGaAs metamorphic buffer layer (MBL) with gradual composition ensuring a redshift of the QD emission up to the second telecom window. Based on the photoluminescence (PL) measurements and numerical calculations, we an...

Deterministic solid state quantum light sources are considered key building blocks for future communication networks. While several proof-of-principle experiments of quantum communication using such sources have been realized, most of them required large setups—often involving liquid helium infrastructure or bulky closed-cycle cryotechnology. In th...

Deterministic solid-state quantum light sources are key building blocks in photonic quantum technologies. While several proof-of-principle experiments of quantum communication using such sources have been realized, all of them required bulky setups. Here, we evaluate for the first time the performance of a compact and stand-alone fiber-coupled sing...

We report on BB84 quantum key distribution tests employing a benchtop plug&play quantum-dot based single-photon source operating at O-band wavelengths. We perform a detailed characterization and exploit optimized temporal filters to maximize the tolerable losses.

In this study, we propose designs of an interband cascade laser (ICL) active region able to emit in the application-relevant mid infrared (MIR) spectral range and to be grown on an InP substrate. This is a long-sought solution as it promises a combination of ICL advantages with mature and cost-effective epitaxial technology of fabricating materials...

Optical trapping has been proven to be an effective method of separating exciton-polariton condensates from the incoherent high-energy excitonic reservoir located at the pumping laser position. This technique has significantly improved the coherent properties of exciton-polariton condensates, when compared to a quasi-homogeneous spot excitation sch...

This erratum corrects the value of the wetting layer thickness provided in our Article [Opt. Express 29, 34024 (2021)10.1364/OE.438708]. This misprint does not influence the results and conclusions presented in the original Article.

Single InP-based quantum dots emitting in the third telecom window are probed quasi-resonantly in polarization-resolved microphotoluminescence experiments. For charged quantum dots we observe negative circular polarization being a fingerprint of the optical spin writing of the carriers within the quantum dots. The investigated quantum dots have a v...

We demonstrate single-photon emission with a low probability of multiphoton events of 5% in the C-band of telecommunication spectral range of standard silica fibers from molecular beam epitaxy grown (100)-GaAs-based structure with InAs quantum dots (QDs) on a metamorphic buffer layer. For this purpose, we propose and implement graded In content dig...

We investigate strongly asymmetric self-assembled nanostructures with one of dimensions reaching hundreds of nanometers. Close to the nanowire-like type of confinement, such objects are sometimes assigned as one-dimensional in nature. Here, we directly observe the spectrum of exciton excited states corresponding to longitudinal quantization. This i...

In this work, we demonstrate a triggered single-photon source operating at the telecom C-band with photon extraction efficiency exceeding any reported values in this range. The non-classical light emission with low probability of the multiphoton events is realized with single InAs quantum dots (QDs) grown by molecular beam epitaxy and embedded dire...

The optical gain spectrum has been investigated theoretically for various designs of active region based on InAs/GaInSb quantum wells—i.e., a type II material system employable in interband cascade lasers (ICLs) or optical amplifiers operating in the mid-infrared spectral range. The electronic properties and optical responses have been calculated u...

We investigated emission properties of photonic structures with InAs/InGaAlAs/InP quantum dashes grown by molecular beam epitaxy on a distributed Bragg reflector. In high-spatial-resolution photoluminescence experiment, well-resolved sharp spectral lines are observed and single-photon emission is detected in the third telecommunication window chara...

In this work we demonstrate a triggered single-photon source operating at the telecom C-band with photon extraction efficiency exceeding any reported values in this range. The non-classical light emission with low probability of the multiphoton events is realized with single InAs quantum dots (QDs) grown by molecular beam epitaxy and embedded direc...

We present comprehensive investigation of the optical properties of hybrid-barrier GaSb-based resonant tunneling structures, containing a bulk-like GaInAsSb absorption layer and two asymmetric type II GaSb/InAs/AlSb quantum wells. Methods of optical spectroscopy by means of Fourier-transformed photoluminescence and photoreflectance are employed to...

We report on BB84 quantum key distribution tests employing a benchtop plug&play quantum-dot based single-photon source operating at O-band wavelengths. We perform a detailed characterization and exploit optimized temporal filters to maximize the tolerable losses.

We present a detailed experimental optical study supported by theoretical modeling of InAs quantum dots (QDs) embedded in an (In,Al,Ga)As barrier lattice matched to InP(001) grown with the use of a ripening step in molecular beam epitaxy. The method leads to the growth of in-plane symmetric QDs of low surface density, characterized by a multimodal...

Single-photon sources are key building blocks in most of the emerging secure telecommunication and quantum information processing schemes. Semiconductor quantum dots (QD) have been proven to be the most prospective candidates. However, their practical use in fiber-based quantum communication depends heavily on the possibility of operation in the te...

We present a detailed experimental optical study supported by theoretical modeling of InAs quantum dots (QDs) embedded in an InAlGaAs barrier lattice-matched to InP(001) grown with the use of a ripening step in molecular beam epitaxy. The method leads to the growth of in-plane symmetric QDs of low surface density, characterized by a multimodal size...

Single-photon sources are key building blocks in most of the emerging secure telecommunication and quantum information processing schemes. Semiconductor quantum dots (QD) have been proven to be the most prospective candidates. However, their practical use in fiber-based quantum communication depends heavily on the possibility of operation in the te...

We demonstrate an experimental approach for creating spatially localized states in a semiconductor microcavity laser. In particular, we shape the spatial gain profile of a quasi-one-dimensional microcavity laser with a nonresonant, pulsed optical pump to create spatially localized structures, known as gain-pinned dissipative solitons, that exist du...

The precise determination of carrier concentration in doped semiconductor materials and nanostructures is of high importance. Many parameters of an operational device are dependent on the proper carrier concentration or its distribution in both the active area as well as in the passive parts as the waveguide claddings. Determining those in a nondes...

The cover image presents the first stand‐alone telecom quantum light source launching single photons directly into a single‐mode optical fiber. It includes a semiconductor quantum dot (QD) which is excited by an integrated laser and cooled by compact Stirling cooler at 40 K. The advanced quantum device includes all filter elements to suppress inten...

A user‐friendly, fiber‐coupled, single‐photon source operating at telecom wavelengths is a key component of photonic quantum networks providing long‐haul, ultra‐secure data exchange. To take full advantage of quantum‐mechanical data protection and to maximize the transmission rate and distance, a true quantum source providing single photons on dema...

We demonstrate an experimental approach to create dissipative solitons in a microcavity laser. In particular, we shape the spatial gain profile of a quasi-one-dimensional microcavity laser with a nonresonant, pulsed optical pump to create spatially localised structures, called gain-pinned dissipative solitons that exist due to the balance of gain a...

The electronic structure of strain-engineered single InGaAs/GaAs quantum dots emitting in the telecommunication O band is probed experimentally by photoluminescence excitation spectroscopy. The observed resonances can be attributed to p-shell states of individual quantum dots. The determined energy difference between the s-shell and the p-shell sho...

We investigate strongly asymmetric self-assembled nanostructures with one of the dimensions reaching hundreds of nanometers. Close to the nanowirelike type of confinement, such objects are sometimes assigned as one dimensional in nature. Here, we directly observe the spectrum of exciton excited states corresponding to longitudinal quantization. Thi...

A user-friendly fibre-coupled single-photon source operating at telecom wavelengths is a key component of photonic quantum networks providing long-haul ultra-secure data exchange. To take full advantage of quantum-mechanical data protection and to maximize the transmission rate and distance, a true quantum source providing single-photons on demand...

The authors demonstrate pure triggered single‐photon emission from quantum dots (QDs) around the telecommunication C‐band window, with characteristics preserved under non‐resonant excitation at saturation, that is, the highest possible, lifetime‐limited emission rates. The direct measurement of emission dynamics reveals photoluminescence decay time...

Hereby, we present a comprehensive experimental and theoretical study of the electronic structure and optical properties of excitonic complexes in strain-engineered InGaAs/GaAs quantum dots (QDs) grown by metalorganic chemical vapor deposition and emitting at the 1.3-µm telecommunication window. Single QD properties have been determined experimenta...

We present an effective method for direct fiber coupling of a quantum dot (QD) that is deterministically incorporated into a cylindrical mesa. For precise positioning of the fiber with respect to the QD-mesa, we use a scanning procedure relying on interference of light reflected back from the fiber end-face and the top surface of the mesa, applicab...

The electronic structure of strain-engineered In$_{0.75}$Ga$_{0.25}$As/GaAs quantum dots emitting in the telecommunication O band is probed experimentally by photoluminescence excitation spectroscopy on the single-dot level. The observed resonances are attributed to p-shell states of individual quantum dots. The determined energy difference between...

Solitons are localised, stable waves created when the effects of dispersion or diffraction are compensated by nonlinearity. In the presence of gain and loss in the system, a balance between them has to be achieved to sustain a localised dissipative mode. Dissipative solitons can be generated in semiconductor microcavity lasers that can be used as b...

Single dot photoluminescence excitation spectroscopy provides an insight into energy structure of individual quantum dots, energy transfer processes within and between the dots and their surroundings. The access to single dot energy structure is vital for further development of telecom-based quantum emitters, like single photon sources or entangled...

Single dot photoluminescence excitation spectroscopy provides an insight into energy structure of individual quantum dots, energy transfer processes within and between the dots and their surroundings. The access to single dot energy structure is vital for further development of telecom-based quantum emitters, like single photon sources or entangled...

Hereby, we present results of finite-difference time-domain simulations of technologically undemanding photonic structures offering a significant improvement in the spectrally broad extraction efficiency of emission from a quantum emitter at the third telecommunication window. The modelling is performed for cylindrical and cuboidal mesa structures...

This work proposes an M-shaped design of quantum wells (QWs) based on a combination of InAs and GaInSb materials forming a broken gap type II system, which can be used as an active region of interband cascade lasers emitting in the mid infrared. Results of band structure modelling revealed that compared to more common W-shaped QWs, the M-design can...