Gowrish Rao

Gowrish Rao
Manipal Academy of Higher Education | MAHE · Department of Physics

MSc, PhD

About

37
Publications
16,625
Reads
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314
Citations
Additional affiliations
July 2010 - present
Manipal Academy of Higher Education
Position
  • Professor (Assistant) Selection Grade
July 2008 - March 2010
National Institute of Technology Karnataka
Position
  • Senior Researcher
July 2006 - July 2008
National Institute of Technology Karnataka
Position
  • Researcher
Education
July 2006 - March 2010
National Institute of Technology Karnataka
Field of study
  • Device Suitability of Vacuum Deposited Compound Semiconductor Thin Films
July 2004 - April 2006
Mangalore university
Field of study
  • Physics

Publications

Publications (37)
Article
The wide bandgap of zinc sulfide (ZnS) is optimum for the detection of UV wavelengths. In the research work presented here, thermal evaporated ZnS layer is paired with Si and Au to form heterojunction and Schottky photodiodes. The devices showed UV detection capabilities. The barrier height of the n-ZnS/p-Si heterojunction varied from 0.06 to 0.1 e...
Article
Cost effective SILAR technique was utilized to synthesis uniform ZnS thin films by varying solution molarity. The structural, composition, optical, and transport properties of zinc sulphide films synthesized were explored in detail. The properties of the films with different thickness were studied using, XRD, SEM-EDS, UV–visible spectroscopy, and I...
Article
CdS films were deposited on glass substrates by thermal evaporation method at room temperature. The effect of air annealing on structural, optical, and electrical properties of the films were characterized by XRD, UV–Visible spectroscopy, Hall effect and I-V measurements. The structural parameters crystallite size and residual stress showed an inve...
Article
The well-known SILAR technique has been widely used to fabricate cost effective and durable photodetectors. From the past few decades, tin sulfide is known as a promising material for wide range photodetectors. In the present case tin sulfide films were deposited on borosilicate glass substrates by simplified SILAR technique without any complexing...
Article
Deposition of ZnO thin films using SILAR method is reported. The films exhibited hexagonal wurtzite structure and the lattice parameters well matching with the theoretical values. Annealing increased the crystallite size, reduced the microstrain and dislocation density thereby proving the enhancement in the quality of the films. Morphology of the f...
Article
The deposition temperature and post-deposition heat treatment can be effectively used to fine tune the structure and composition of the films to obtain desired performance. In this paper, we have investigated the effect of elevated substrate temperature and post-deposition annealing (in air and vacuum) on the properties of ZnS films. Both the tools...
Article
The paper reports successful fabrication of CdS/CdTe and ZnS/CdTe heterojunctions by a combination of two different deposition techniques viz. successive ionic layer adsorption and reaction (SILAR) and conventional vacuum deposition. The SILAR deposited CdS and ZnS layers formed well adherent and stable heterojunctions with the vacuum deposited CdT...
Article
Nano crystalline Cd1-xZnxS (x=0.00-1.00 at. %) films were deposited on glass substrates through conventional chemical spray pyrolysis method at different temperatures. The films with x< 0.70 have exhibited hexagonal phase beyond which cubic phase was noticed. The shifting of XRD peaks with higher Zn content, confirmed the formation of Cd1-xZnxS sol...
Article
Full-text available
The SILAR deposited CdS films were incorporated with various concentrations of zinc using zinc acetate and zinc chloride precursors. The presence of zinc was found to alter the crystal structure and energy bandgap of the films. The bandgap increased by nearly 44% with the increase of zinc concentration in the films. The photoluminescence spectra of...
Article
Full-text available
Uniform and well-adherent SnO 2 thin films, with thickness ranging from 60 nm to 6 μ m, were deposited on borosilicate glass substrate by Successive Ionic Layer Adsorption and Reaction (SILAR) technique. A micro-controlled SILAR unit was employed to precisely monitor the deposition conditions. The effect of precursor concentration and post-depositi...
Article
The effect of bismuth nanoparticle incorporation on the characteristics of p-ZnTe/n-CdS light sensors is evaluated in detail. The device was fabricated by vacuum evaporation method. The bismuth nanoparticles were obtained on the substrates kept at 453 K. The electrical conductivity of ZnTe layer was found to increase significantly after the introdu...
Article
Full-text available
In the group of II-VI compound semiconductor, zinc sulphide (ZnS) has numerous potential applications in optoelectronic devices. In this effort, we have prepared ZnS thin films on glass substrates by Successive Ion Layer Adsorption and Reaction (SILAR) method. Zinc acetate and sodium sulphide were used as cationic and anionic precursors for the fil...
Article
Full-text available
Thin films of ZnS have been vacuum coated on glass substrates at room temperature. The crystal structure and optical properties of the films were studied using X-ray diffractometer (XRD and UV visible spectrophotometer, respectively. The X-ray diffraction patterns showed that films were polycrystalline in nature with cubic structure. The optical ba...
Article
The thermal deposited ZnS thin films with thickness ranging from 400 nm to 1000 nm were irradiated with various doses of 8 MeV electrons. The structural, optical and photoluminescence properties of the irradiated films were studied in detail. The films with thickness ranging from 600 nm to 650 nm were found to have highest tolerance to irradiation....
Article
Zinc sulphide (ZnS) thin films were deposited on glass substrate by micro‐controller‐based successive ion layer adsorption and reaction method using ZnCl2 as a precursor. The films were found to be polycrystalline. The crystallite size of the films increased with the increase in both precursor concentration and immersion cycles. The increased cryst...
Article
The TiO2 films were obtained from successive ion layer adsorption and reaction (SILAR) method. A micro-controller based SILAR unit was used to precisely monitor and control the deposition parameters. The films were uniform and free from physical defects such as pores and cracks. A maximum thickness of about 700 nm was achieved. The films were found...
Conference Paper
In the group of II-VI compound semiconductor, cadmium zinc sulphide (CdxZn1-xS) thin films have broad application in photovoltaic, optoelectronic devices etc. For heterojunction aspects, CdxZn1-xS thin film can be used as heterojunction partner for CdTe as the absorber layer. In this work, CdZnS thin films prepared on glass substrates by Successive...
Article
The ZnO thin films were prepared by successive ionic layer adsorption and reaction (SILAR) method at elevated precursor temperature. The films were later subjected to post-deposition annealing at different temperatures. This annealing process was found to be beneficial as it improved the structural and optical properties of the films. The ZnO films...
Article
The paper compares structural, optical and electrical properties of ZnS thin films prepared by thermal evaporation and SILAR techniques. Both techniques produced well-adherent films with uniform substrate coverage. Films were found to be polycrystalline in both the cases. Crystallite size of the films was found to improve with thickness. Thermal ev...
Article
Full-text available
The paper reports fabrication and characterization of Bi:ZnTe/Al:ZnSe and Si/Al:ZnSe thin film photodiodes. The characteristics of the devices were studied under dark and illuminated conditions. The normalized spectral response, speed of photoresponse and variation of photocurrent with power density were studied in detail. Many vital parameters, su...
Article
The paper reports tailoring of the optical bandgap in SILAR deposited CdxZn1-xS alloy films. Acetates and chlorides of zinc and cadmium were used to obtain the films. Two separate routes were employed to achieve desired alloy composition in the films. In the first route, the molar concentration of the precursors was varied. In the second route; var...
Article
The paper compares the properties of bismuth doped ZnS and ZnSe films obtained by two different doping techniques: (i) The sandwiching technique, in which two layers of dopant material are sandwiched between chalcogenide material and (ii) nano-particle incorporation technique in which chalcogenide layer is deposited on top of a layer of bismuth nan...
Article
The effects of substrate temperature and post deposition annealing on the structural, optical and electrical properties of vacuum deposited ZnSe thin films are presented here. The chemical composition of the films varied drastically with substrate temperature which in turn caused changes in various properties of the films. The grain size of the fil...
Article
The paper reports the fabrication and detailed electrical characterization of thermal evaporated n-Si/p-ZnTe thin film heterojunction diodes. The heterojunction diodes were prepared by depositing ZnTe films on n-Si substrates. The conduction mechanism, barrier height, space charge density and width of the depletion region were determined by I–V and...
Article
The paper reports the detailed analysis of photoconductivity and photo-detecting properties of vacuum deposited zinc selenide (ZnSe) thin films. The vacuum deposited ZnSe films were found to have high absorption coefficient and showed peak photo-response at 460 nm. The photocurrent and photo-response time of the films were measured as a function of...
Article
p‐ZnTe/n‐Si heterojunction diodes were prepared by vacuum depositing ZnTe films on n‐Si substrates. Detailed electrical characterization was performed to determine the conduction mechanisms operating in the diode. Important parameters such as ideality factor and barrier height were also determined.
Article
The study of n‐CdTe/p‐ZnTe heterojunctions is of vital importance for the fabrication of single junction and tandem solar cells. In the present research work n‐CdTe/p‐ZnTe heterojunction diodes were prepared by high vacuum deposition technique. The growth conditions required for obtaining desired quality n‐CdTe and p‐ZnTe films were optimized by pe...
Article
The present paper reports the fabrication and detailed electrical characterization of p-ZnTe/n-CdTe heterojunction diodes prepared by vacuum deposition method. The possible conduction mechanisms of the heterojunction diode were determined by analyzing the I–V characteristics. The C–V characteristics of the heterojunction diodes were studied to dete...
Conference Paper
The study of n-CdTe/p-ZnTe heterojunctions is of vital importance for the fabrication of single junction and tandem solar cells. In the present research work n-CdTe/p-ZnTe heterojunction diodes were prepared by high vacuum deposition technique. The growth conditions required for obtaining desired quality n-CdTe and p-ZnTe films were optimized by pe...
Article
The present paper reports the successful doping of vacuum evaporated zinc telluride (ZnTe) thin films with bismuth by a new technique of using nano-spheres. The discontinuous films of bismuth (the dopant material), containing bismuth in the form of nano-spheres, were prepared by vacuum evaporation and the ZnTe films were then deposited on top of th...
Article
The present paper reports the analysis of photoconductivity of vacuum deposited zinc telluride (ZnTe) thin films as a function of substrate temperature and post-deposition annealing. Detailed analyses were first carried out to understand the effect of substrate temperature and annealing on the structure, composition, optical and electrical properti...
Article
p-ZnTe/n-ZnSe heterojunction diodes were prepared by vacuum deposition and a detailed electrical characterization of the heterojunction was performed. The I–V and C–V characteristics of the heterojunction diodes were studied to determine the conduction mechanism, barrier height, space charge density and thickness of the depletion region in the hete...
Article
The present paper reports the effect of substrate temperature on the structural, optical and electrical properties of vacuum deposited zinc telluride (ZnTe) thin films. X-ray diffraction (XRD) analysis of the films, deposited on glass substrates, revealed that they have cubic structure with strong (111) texture. Room temperature deposits are tellur...

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Projects

Project (1)
Project
DAE-BRNS (Govt. of India) funded research project Study of high-energy electron irradiation effects on ZnS based UV photo-detectors