Girish Wadhwa

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• Research Associate
• Researcher at University of Ferrara

In this article, a charge plasma (CP) based doping‐less (DL) nanowire junctionless field effect transistor (NW JLFET) has been investigated for better immunity against geometrical dimension variation from a low power application perspective. SiGe source/drain and Si/SiGe/Si heterostructure channel have been used to improve the electrostatics in the...

In this article, an electrolyte-gated aluminum oxide thin film transistor with a pentacene structure has been developed as an effective pH sensor. It has a high sensitivity, low power consumption, and low pH resolution. Electrolyte-gated organic semiconductor materials improve the performance of pentacene-based pH sensors. Aluminum oxide is an insu...

This paper presents a novel label-free biosensing method for the detection of cancer biomarkers using a T-shape channel and L-shape nano-cavity in a Si:HfO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> based ferroelectric Dielectrically modulated Junctionless Tunnel Field Effect Transistor (FE...

In this study, the impact of the diffusion mechanism of a biomolecule in the nanocavity ( Tbio ) region on the electrical characteristics of a split-gate, step-channel electrolyte-insulated semiconductor vertical TFET (SGSC-EIS-VTFET) pH biosensor was investigated. The impact of the transport sensing mechanism, that is, diffusion-limited process an...

In this article, we present and simulate a very sensitive label-free biosensor that uses Si:HfO2 ferroelectric (FE) junction less tunnel field-effect transistor (FE-JL-TFET) charge/dielectric modulation. For the first time negative capacitance (NC) behavior is made possible by the FE gate stacking of Si-doped HfO2 in the dual inverted-T cavity with...

This paper presents a compact design for a four-element multiple-input multiple-output (MIMO) antenna for millimeter-wave (mmWave) communications covering the bands of n257/n258/n261. The MIMO design covers the frequency range of 24.25–29.5 GHz, with a wide bandwidth of 5.25 GHz. The element of the MIMO antenna structure uses a single circular patc...

The electrical characteristics of the ferroelectric field-effect transistors (FeFETs) are analyzed numerically and presented in this paper. The metal–ferroelectric–insulator–semiconductor field-effect transistor (MFISFET), among the primary structures, is taken into consideration. The nonsaturated hysteresis loop of the ferroelectric material is de...

This study investigates symmetrical/asymmetrical vertical electrolyte‐insulated semiconductor Tunnel field effect transistors (TFETs) (SV‐EIS‐TFET/ASV‐EIS‐TFET) for their application as pH biosensors. On the basis of device‐level simulations, the underlying physics of all architectures is explored and the comparative biosensing abilities of pH bios...

This work presents a collapsed supply and boosted bit-line swing (CSBBS) write driver circuit, with the specific goal of enhancing write performance. The write ability of SRAM cells is gravely affected by device parameter variations in deep sub-threshold region of operations. The collapsed supply and boosted bit-line swing are key features aimed at...

Silicon carbide (SiC) nanowire (NW) junctionless field-effect transistors (JLFETs) offer a promising solution due to SiC's superior material properties and the JLFET's inherent advantages in sub 5 nm regime. These transistors can be used to create integrated circuits (ICs) that are smaller and more energy efficient. This study investigates SiC NW J...

In the present work, we investigate the impact of structure dimensional parameters on the short channel effects which occurs especially below 20 nm regime particularly gate induced drain leakage (GIDL) current. Using technology computer aided design simulation (TCAD), we have examined the GIDL for SiGe as source/drain in NTJLFET. The structural dim...

This work is based on the analysis and designing of Gate All Around N⁺ doped layer Nanowire Tunnel Field Effect Transistors (NTFET) without junctions for application in biosensor by considering the various bio molecules like uricase, proteins, biotin, streptavidin, Aminopropyl-triethoxy-silane (ATS) and many more with dielectric modulation techniqu...

In the present paper, a biosensor is proposed with a split gate dielectric modulated bottom gate top contact organic thin‐film transistor. A cavity is marked below gate metal for enhancing sensitivity in biomedical applications. The organic thin‐film transistors‐based biosensors have shown applications over advanced biosensing platforms due to thei...

In this twenty-first century, world’s ecosystem has been heavily contaminated with various hazardous gas molecules via anthropogenic activities and naturally occurring unbalanced processes. Therefore, it is quite crucial to develop sensors for the detection of harmful gas molecules, for which various gas sensors have been utilized to monitor the en...

During the fabrication of a double gate TFET structure, there is a high chance of gate misalignment which may affect the sensitivity of the sensors. In this paper, we investigated various effects of gate misalignment and switching characteristics of charge plasma-based triple metal double gate vertical TFET on electrical characteristics. We observe...

The present paper analyzes the 2-dimensional surface potential model designed using Double Gate Vertical TFET (DGV-TFET). The proposed model using the Matlab tool possesses an inherited trait of TFET, namely the dual modulation effect. The dual modulation effect describes a control over the surface potential of biasing voltages utilized to compute...

In this article, an analytical model for dielectric modulated heterojunction (GaSb/Si) vertical tunnel field-feect transistor (DMH-VTFET) based biosensor has been developed and investigated for its biological applications. The presented analytical model incorporates important parameters of biological molecules i.e. dielectric permittivity which pro...

This work addresses a novel biosensor design and its surface potential sensitivity analysis to identify various biomolecules. The designed structure integrates the attributes of linear graded work function gate electrode of binary metal alloy and N + pocket of low bandgap SiGe material in double gate-gate stack charge plasma vertical TFET with a si...

In this paper, Partially Depleted Silicon on Insulator (PDSOI) MOSFET and Fully Depleted Silicon on Insulator (FDSOI) MOSFET are designed, and the impact of n-type doping concentration, work function variation, gate oxide, and silicon layer thickness on the performance of the device is studied and analyzed. The floating body and associated kink eff...

In this paper, a novel n + SiGe pocket layer gate stacked VTFET doping less charge plasma is proposed and analyzed using Silvaco TCAD simulation software. The proposed device will be worked as a transducer sensor which is based upon the principle of the electrostatic charge plasma. The inclusion of doping less charge plasma will ease the device in...

This work reports a biosensor based on the dual cavity dielectric modulated ferroelectric charge plasma Tunnel FET (FE-CP-TFET) with enhanced sensitivity. By incorporating underlap and dielectric modulation phenomena, ultra sensitive, and label-free detection of biomolecules is achieved. The cavity is carved underneath the source-gate dielectric fo...

The present paper has proposed a dielectric modulated gate underlap dopingless tunnel field effect transistor (DM-GUD-TFET). In the proposed device, a cavity is introduced on side of the gate metal to attain high sensitivity for biomedical applications. The immobilization of biomolecules within the cavity induces the variation in surface potential....

In this paper, a linear graded double gate made of binary metal alloy PαQ1-α TFET (LDG-TFET) is proposed and then it is used to implement distinct logic functions. To realize OR logic functions n-type LDG-TFET is used whereas to realize NAND logic functions implementations, a p-type LDG-TFET is used by individually biasing the two linearly graded g...

This review describes an emerging field of electronics devices; electron spin exploitation use for a further degree of freedom incorporation to charge state, with the significant feature like non-volatility, processing speed, reduction in power consumption, escalation in integration densities, data storage, and data transfer as compared to conventi...

In the present paper, design and performance assessment of hetero gate dielectric tunnel field effect transistor (TFET) with pocket doping at the source-channel interface is proposed for improving the switching characteristics of the device. This paper demonstrates an approach to suppress the ambipolarity and to improve the ION/IOFF ratio by invest...

The present paper proposes a dielectric modulation based Triple Gate Doping Less Tunnel Field Effect Transistor (TG-DLTFET) biosensor with a cavity introduced underneath the gate and source metal for symmetrical and asymmetrical device to recognize very small size biomolecules such as Amino Acids (AAs). The proposed n + pocket doped vertical device...

This paper proposes a novel linear graded binary metal alloy PαQ1-α gate electrode and middle N+ pocket of Si0.5Ge0.5 Vertical-TFET (LGN-VTFET) device structure. The device is gradually developed by considering initially the impact of middle N+ pocket of low band Si0.5Ge0.5 material at the channel side and then utilizing the linear graded electrode...

A Triple-Metal-Gate Vertical Tunnel FET (TMG-VTFET) on the doped silicon body is proposed in this paper. The metal gate is partitioned into three sections in the designed structure, and the work function of the middle section is kept higher as compare to the two other metal gate sections. The difference of the work function and the band gaps betwee...

In the present paper, symmetrical configuration of dual material double gate dielectric modulated junctionless TFET (DM DG JLTFET) for biosensor applications is explored. The JLTFET consists of Si material with an intensely doped n-type substrate. In this work, the JLTFET utilizes the dielectric modulation method which aids the bio-transistor to re...

This submitted work presents the 2-dimensional analytical modeling of Tunnel FET’s in consideration with the inherent properties of dual modulation effect. This effect explains the concept of regulating both gate and also the drain terminal biasing voltage on device surface potential and hence on the tunneling drain current model, which uses the de...

An analytical model of dual material single gate doping-less Tunnel FET (DM-GU-TFET) with gate underlap regions has been proposed. The potential of gate underlap area with channel area has been examined using modeling and the results are validated using TCAD simulation at boundary conditions. The proposed structure has been divided into ten distinc...

In this present study, junctionless vertical tunnel field-effect transistor (JL-VTFET) with catalytic metals as gate contacts is proposed for gas sensing applications. The vertical double-sided gate architecture provides better gate controllability over conventional TFETs for band-to-band tunneling (BTBT). An architecture for n-channel JL-VTFET wit...

In this investigated work, we have analysed the miscellaneous figure of merit for Double metal Triple gate TFET. Various techniques have been utilized to improve the ON-state driven current in the drain by doing a comprehensive analysis. Different techniques are examined and correlated by using the TCAD Silvaco tool to get excellent ON current. Fur...

In this era of technology, biosensors play an essential role in living life. Today’s research and investigation revolved around its higher responsiveness and speed of detection. Normal TFET has many disadvantages like fabrication complexity, random dopant fluctuation, and the lower ON-State current. We are introducing a device that is a Dual-Cavity...

In this work, the characteristics of linearly graded work function (LGW) by utilizing the composition of binary metal alloy AσB1−σ gate electrode and the characteristics of Si-Si0.55Ge0.45 middle N+ pocket heterojunction at the interface of source and channel is explored in the high-k gate stack vertical-TFET (GS-VTFET). The proposed novel structur...

This work utilizes the dielectric modulated detection technique within a junctionless tunnel field-effect transistor (JLTFET) to detect various charged and neutral biomolecules. The electrostatic properties of the proposed dielectric modulated junctionless double gate JLTFET (DM-JL DGTFET) are observed and analyzed to determine the biomolecules lik...

In this Paper, Dielectric Modulated Dopingless Double Gate Transistor (DM-DLDGTFET) device is proposed for the free label detection of the charged and neutral biomolecules. A charge-plasma principle is used for label-free detection of biosensors to reduce the processing complexity and cost of nanoscale products. Firstly, the simulations for the pro...

In this manuscript, a compact model of source depletion, drain depletion and channel potential in the charge plasma based Tunnel Field Effect Transistor (U-CPBTFET) with two underlap regions (source-gate and gate-drain) is proposed and developed. The shift in potential due to variation in length of gate underlap regions has been studied and authent...

An optimally designed Dual Source Vertical Tunnel Field Effect Transistors is proposed and investigated using technology computer aided design simulation. The vertical tunnel FET have dispersal of source channel drain in the vertical direction which will enhance the scalability of the simulated device. The benefit of the TFET is switching mechanism...

The vital utilization of biosensors in different domains has led to the design of much more precise and powerful biosensors, since they have the potential to attain information in a fast and simple manner compared to conventional assays. The present review describes the basic concepts, operation, and construction of biosensors and presented an ideo...

The given paper proposes the 2D analytical modeling of surface potential and electric field for a Dual Source Vertical Tunnel Field Effect Transistor (DSV-TFET). The 2-D Poisson equations are solved by parabolic approximation method, with the help of suitable boundary conditions and analytical expressions for surface potential and electric field di...

Nanoscale devices have great potential for providing a platform for detecting biomolecules. There are a number of difficulties observed during the fabrication process of these devices, such as random dopant fluctuation, thermal budget, and so on. To cut down these problems, charge-plasma-based concept is introduced. This paper proposes the implemen...

Nanoscale devices are emerging as a platform for detecting biomolecules. Various issues were observed during the fabrication process such as random dopant fluctuation and thermal budget. To reduce these issues charge-plasma-based concept is introduced. This paper proposes the implementation of charge-plasma-based gate underlap dielectric modulated...