Geoffrey Dawe

• Head of Department at RaGE Systems

A multi-band, multi-standard programmable power amplifier having tunable impedance matching input and output networks and programmable device characteristics. The impedance of either or both of the impedance matching input and output networks is tunable responsive to one or more control signals. In one example, the programmable power amplifier inco...

A flexible ADC for a multi-band and multi-mode transceiver is presented. It can be reconfigured between pipeline and DeltaSigma architectures for power optimum operation in WLAN/WiMAX and GSM/CDMA2000/WCDMA, respectively. A maximum dynamic range of 76 dB with less than 1 mW at 1.2 V supply was achieved using voltage scaling and closed-loop opamp de...

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A transmitter integrating a passive FET Quad up-conversion mixer, a power amplifier with output P_1dB of 23 dBm, a transmit/receive (T/R) switch with an insertion loss of 1.1 dB and output P_1dB of 21 dBm has been implemented in a 0.25-μm foundry CMOS process. The transmitter at the output power level of 16.5 dBm is compliant to...

Market requirements and implementation of the first broadband tuner on a chip are described. This IC is built in a 0.8-μm BICMOS process and includes the entire signal path as well as integrated PLLs. The architecture and design are discussed at the block and transistor levels. Measured results are shown

An ISM-band transceiver chip includes an LNA, image-reject up- and down-converters, a VCO, a /64/65 dual-modulus prescaler, an IF Limiting amplifier/RSSI strip, and a voltage regulator. The IC operates from a single-supply down to 3.0 V and is optimized for a 10.7 MHz IF frequency to allow use of very low-cost ceramic filters. The 6.8 mm<sup>2</sup...

RFIC Technology is still in the infancy phase. The requirement for extremely low-cost, high-performance RF transceivers will drive dramatic changes in system architecture, semiconductor technology, and circuit implementation in the next few years. This paper addresses some of these issues and presents results that illustrate new directions in RFIC...

Digitally-enhanced cordless telephone (DECT) is a standard for residential cordless telephony and wireless local loop. Components for this market must be low-cost and highly-integrated. This paper presents a DECT radio frequency integrated circuit (RFIC). This IC, combined with an IFIC, baseband converter, low-noise amplifier, and power amplifier f...

A silicon bipolar process for RF and microwave applications, which features 25-GHz double-polysilicon self-aligned npn bipolar transistors with 5.5-V BV_CEO, optional 0.7-μm (L_eff) NMOS transistors with p⁺ polysilicon gates for switch applications, lateral pnp transistors, high and low valued resistors, p⁺...

A 0.6-μm 3.5-V silicon bipolar process is developed for low power and high speed operation in wireless applications. The process features 35-GHz f_T bipolar transistors with a 0.3-μm electrical emitter width, lateral pnp transistors, polysilicon-to-n⁺ plug capacitors, NMOS transistors with a 10-nm gate oxide layer for low on-re...

A 0.6-μm 3.5-V silicon bipolar process is developed for low power and high speed operation in wireless applications. The process features 35-GHz f_T bipolar transistors with a 0.3-μm electrical emitter width, lateral pnp transistors, polysilicon-to-n⁺ plug capacitors, NMOS transistors with a 10-nm gate oxide layer for low on-re...

Microwave and dc characteristics, and wireless applications of a low cost and low power silicon bipolar process with NMOS transistors are described. The process features 25-GHz double-polysilicon self-aligned npn bipolar transistors with 5.5-V BV_CEO, optional 0.7-μm NMOS transistors with p⁺ polysilicon gate for switch applicat...

Silicon germanium heterojunction bipolar transistors (SiGe HBTs) offer significant performance and cost advantages over conventional technologies in the production of integrated circuits for communications, computer and transportation applications. This paper reviews the status of SiGe development, compares SiGe with existing Si and GaAs technologi...

Heterojunction bipolar technology using SiGe epitaxial base grown by ultra high vacuum/chemical vapor deposition (UHV/CVD) offers very high performance and very low cost for the production of wireless communication high frequency ICs. This paper reports on the status of SiGe HBT development and compares it with existing Si and GaAs technologies

A high performance MMIC transceiver chip-set has been developed for the 2.4 GHz to 2.5 GHz ISM band. The chip set consumes low power, making it ideal for battery powered FSK systems such as portable powered computer WLAN and portable data collection terminals. The die sizes are also very small, making them cost effective for high volume commercial...

The arrival of commercial silicon-germanium heterojunction bipolar devices (SiGe HBTs), tailored for low voltage and low power consumption, will allow for the development and production of low cost, high volume integrated circuits at frequencies in the microwave and mm-wave regime. SiGe HBTs exhibit superior performance relative to existing silicon...

This paper will present a generic digital transceiver system and discuss factors involved in the partition and development of an ASIC solution. The results of such a development will be discussed. Included is an ultra-low power consumption LNA (1.7 dB NF @ 3 V, 2 mA), a high power added efficiency PA chain (44% @ 0.25 W), a low distortion T/R switc...

Two technologies are demonstrated whereby high- Q , vertical-structure, abrupt-junction varactor diodes are monolithically integrated with 0.25-μm GaAs MESFETs on semi-insulating GaAs substrates for multifunction millimeter-wave monolithic circuit applications. Diodes with various anode sizes have been realized with measured capacitance swings of >...

High- Q GaAs abrupt varactor diodes and 0.25-μm GaAs MESFETs have been combined on a semiinsulating GaAs substrate for millimeter-wave monolithic IC applications. Based on the measured series resistance and capacitance, the diodes have a calculated Q at -4 V, 50 MHz of approximately 19000. The MESFETs have a measured gain of >6 dB at 35 GHz, with e...

High-Q GaAs abrupt varactor diodes and 0.25- mu m GaAs MESFETs have been combined on a semi-insulating GaAs substrate for millimeter-wave MMIC (monolithic microwave integrated circuit) applications. Based on the measured series resistance and capacitance, the diodes have a calculated Q at -4 V, 50 MHz of approximately 19000. The MESFETs have a meas...

A technique for modeling active and passive monolithic elements in a microstrip environment at millimeter-wave frequencies using on-wafer probing is developed. This procedure involves accurately characterizing the coplanar waveguide to microstrip transition used in making on-wafer measurements. Once the transition is characterized, the models for v...

The authors describe the design, fabrication and performance of high isolation broadband MMIC switches based on MESFET and PIN diode devices. The PIN based MMIC rivals state of the art hybrid switches which require tuning. These monolithic units are easily inserted into existing applications with advantages of size, speed, reliability and cost with...

One of the many GaAs MMIC products released over the last few years is the monolithic FET switch. These switches have numerous applications in EW, radar and communications systems. They offer faster switching speed, lower cost, smaller size and lower power consumption than hybrid PIN switches. The products described in this paper are broadband (DC...

The design and fabrication of a state-of-the-art 35-GHz monolithic amplifier is briefly described. The amplifier with 6.5-dB gain, 4-dB noise figure, and 10-dBm power output at 1-dB gain compression is based on a 0.25×200-μm molecular-beam-epitaxy (MBE)-grown MESFET. Device, circuit design, fabrication details, and test results are presented

The design and fabrication of a state-of-the-art 35-GHz monolithic low-noise amplifier (LNA) is briefly described. The amplifier, with 6.5-dB gain, 4-dB noise figure, and 10-dBm power output at 1-dB gain compression, is based on a 0.25-μm×200-μm molecular-beam epitaxy (MBE)-grown MESFET. Device, circuit design, fabrication details, and test results...

Two distinct monolithic GaAs voltage-controlled oscillators (VCOs) are reported: a Gunn diode-based circuit and a FET-based circuit. The Gunn VCO design incorporates 14 Gunn diodes, a varactor diode, power combiner, matching network and bias on a single integrated chip. The Gunn oscillator has delivered 125 mW at 32 GHz and 70 mW at 40 GHz with up...