Franz Müller

Franz Müller
Fraunhofer Institute for Photonic Microsystems IPMS | IPMS · Center Nanoelectronic Technologies (IPMS-CNT)

Master of Science

About

36
Publications
5,449
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223
Citations

Publications

Publications (36)
Article
Full-text available
This paper reports 2bits/cell ferroelectric FET (FeFET) devices with 500 ns write pulse of maximum amplitude 4.5V for inference-engine applications. FeFET devices were fabricated using GlobalFoundries 28nm high-k-metal-gate (HKMG) process flow on a 300mm wafer. The devices were characterized, and statistical modeling of variations in the fabricated...
Conference Paper
HfO2-based ferroelectric FETs (FeFETs) offer excellent retention, scalability, and memory window. However, achieving high endurance is still challenging. Here, a fluorination treatment is presented that enables significant endurance and device stability improvement. Noise and charge pumping methods are applied to obtain deeper understanding of the...
Conference Paper
We report ferroelectric (FE) laminate HSO/HZO MFMIS FeFETs. An MFM/MIS area ratio control enables low voltage operation and 10 5 endurance. FE lamination (2 × 10 nm, 4 × 5 nm) and low FE anneal reduce the FeFET variability. Impact of the stack (MFMIS), material type/lamination, and FE anneal are studied for enhanced FeFET reliability and reduced va...
Article
Today, a large number of applications depend on deep neural networks (DNN) to process data and perform complicated tasks at restricted power and latency specifications. Therefore, processing-in-memory (PIM) platforms are actively explored as a promising approach to improve the throughput and the energy efficiency of DNN computing systems. Several P...
Preprint
div>This paper reports high precision, highly linear MAC operation conducted on 28nm ferroelectric (Fe) FET (FeFET) based 4Kb computing-in-memory (CIM) core with 1FeFET-1T structure. The CIM-macro consists of 4 Kbit ultra-high precision FeFET based synaptic core, ADCs, and peripheral components for data processing. The crossbar array in the synapti...
Preprint
Full-text available
Content addressable memory (CAM) is widely used in associative search tasks for its highly parallel pattern matching capability. To accommodate the increasingly complex and data-intensive pattern matching tasks, it is critical to keep improving the CAM density to enhance the performance and area efficiency. In this work, we demonstrate: i) a novel...
Conference Paper
More and more applications use deep neural networks (DNN) to execute complex tasks. Depending on the application, there are high requirements regarding latency and performance parameters, especially for edge devices (edge AI). Due to the increasing challenges regarding Moore's Law, new approaches are required. A promising candidate for this is anal...
Article
Full-text available
This work presents 2 bits/cell operation in deeply scaled ferroelectric finFETs (Fe-finFET) with 1µs write pulse of maximum ±5V amplitude and WRITE endurance above 109 cycles. Fe-finFET devices with single and multiple fins have been fabricated on SOI wafer using a gate first process, with gate lengths down to 70 nm and fin width 20 nm. Extrapolate...
Article
Nearest neighbor (NN) search computations are at the core of many applications such as few-shot learning, classification, and hyperdimensional computing. As such, efficient hardware support for NN search is highly desired. In-memory computing using emerging devices offers attractive solutions for NN search. Solutions based on ternary content-addres...
Article
Nonvolatile memories especially the ferroelectric (FE)-based ones such as ferroelectric tunnel junctions (FTJs) and ferroelectric field-effect transistors (FeFETs) have recently attracted a lot of attention. FTJs have been intensively researched for the last decade and found to be very promising memory devices due to their significant nondestructiv...
Preprint
Full-text available
Deep random forest (DRF), which incorporates the core features of deep learning and random forest (RF), exhibits comparable classification accuracy, interpretability, and low memory and computational overhead when compared with deep neural networks (DNNs) in various information processing tasks for edge intelligence. However, the development of eff...
Conference Paper
This paper investigates reconfigurable physical unclonable function (PUF) design by exploiting the polarization switching variation and stochasticity in ferroelectric field-effect-transistors (FeFETs). The proposed PUFs include 1-transistor/cell (1T/C) and 2T/C designs. The denser 1T/C PUF splits random ‘0’ and ‘1’ states using a tactically pre-def...
Conference Paper
This paper investigates reconfigurable physical unclonable function (PUF) design by exploiting the polarization switching variation and stochasticity in ferroelectric field-effect-transistors (FeFETs). The proposed PUFs include 1-transistor/cell (1T/C) and 2T/C designs. The denser 1T/C PUF splits random ‘0’ and ‘1’ states using a tactically pre-def...
Conference Paper
Hafnium oxide based ferroelectric FETs (FeFETs) are highly suitable for in-memory computing applications like neuromorphic hardware due to their CMOS compatibility, high dynamic range, low power consumption and good linearity. Device-to-device and die-to-die variability play an important role, especially due to the polycrystalline nature of ferroel...
Article
Full-text available
A multi-level cell (MLC) operation as a 1–3 bit/cell of the FeFET emerging memory is reported by utilizing optimized Si doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based on ferroelectric laminates. An alumina interlayer was used to achieve the thickness independent of the HSO and HZO-based stack with optimal ferroelectric properties...
Article
Full-text available
The discovery of ferroelectricity in the fluorite structure based hafnium oxide (HfO2) material sparked major efforts for reviving the ferroelectric field effect transistor (FeFET) memory concept. A Novel metal-ferroelectric-metal-ferroelectric-insulator-semiconductor (MFMFIS) FeFET memory is reported based on dual ferroelectric integration as an M...
Conference Paper
Recently, ferroelectric field-effect transistors (Fe-FETs) based on hafnium oxide (HfO 2 ) have been shown to be promising candidates for synaptic devices in neuromorphic applications. The polycrystalline structure of the ferroelectric layer strongly impacts the memory storage as well as the synaptic device performance, especially for highly scaled...
Article
Full-text available
In spite of the increasing use of machine learning techniques, in-memory computing and hardware have increased the interest to accelerate neural network operation. Henceforth, novel embedded nonvolatile memories (eNVMs) for highly scaled technology nodes, like ferroelectric field effect transistors (FeFETs), are heavily studied and very promising....
Conference Paper
Nearest neighbor (NN) search is an essential operation in many applications, such as one/few-shot learning and image classification. As such, fast and low-energy hardwaresupport for accurate NN search is highly desirable. Ternary content-addressable memories (TCAMs) have been proposed to accelerate NN search for few-shot learning tasks by implement...
Article
A novel hybrid antiferroelectric (AFE)-based charge trap (CT) memory is reported focusing on an amplified tunnel oxide field (ETO) via the dynamic of an AFE hysteresis dipole switching. The role of dynamic permittivity increase and the saturated polarization at the instant of the write operation are explored for enhanced ETO. The hybrid CT concept...
Conference Paper
Full-text available
Content addressable memory (CAM) is widely used for data-centric computing for its massive parallelism and pattern matching capability. Though the CAM density has been improved by replacing the area-consuming SRAM with compact emerging nonvolatile memories (NVMs), its implementation has been limited to single level cell. To further boost the CAM de...
Conference Paper
Full-text available
This paper presents an efficient crossbar design and implementation intended for analog compute-in-memory (ACiM) acceleration of artificial neural networks based on ferroelectric FET (FeFET) technology. The novel mixed signal blocks presented in this work reduce the device-to-device variation and are optimized for low area, low power and high throu...
Conference Paper
Full-text available
We report on antiferroelectric (AFE) hybrid charge trap (CT) memory with amplified tunnel oxide field via dynamic AFE hysteresis dipole switching. Memory window (4.5V), switching speed (<1μs), 10 years retention, and 10^5 endurance are reported. The HSO/HZO with tailored (FE,AFE) hysteresis are explored for low power and high-speed-boosted CT memor...
Preprint
Nearest neighbor (NN) search is an essential operation in many applications, such as one/few-shot learning and image classification. As such, fast and low-energy hardware support for accurate NN search is highly desirable. Ternary content-addressable memories (TCAMs) have been proposed to accelerate NN search for few-shot learning tasks by implemen...
Article
Full-text available
Increasing demands for new computer archi-tectures may require embedded non-volatile memories as for example in-memory computing. Ferroelectric field-effect transistors (FeFETs) add further advantages besides their outstanding properties due to the availability of both n-type and p-type transistors. The latter favor a different channel materials, l...
Conference Paper
Full-text available
Hafnium based ferroelectric field effect transistors (FeFETs) are expected to be influenced by a high defect density of thick gate ferroelectric hafnium oxide. In order to quantify this noise source, we optimized noise and defect density investigation methods with respect to stable erase and program states of FeFETs. Understanding defect states and...
Article
Long data retention is a critical requirement for many of the potential applications of HfO₂-based ferroelectric field-effect transistors (FeFETs). However, methods for its rapid assessment are still missing. In this article, we report a detailed investigation of the retention and switching properties of FeFETs fabricated in the 28-nm high-k metal...
Article
We report on the temperature-dependent operation of fluorite-structure-based ferroelectric FET (FeFET) emerging memory. A temperature range (-40 °C to 40 °C) is used to explore the FeFET characteristic relation to operating temperature. The memory window (MW) shows a modulated response that features a reciprocal MW dependence on temperature, such t...
Article
We report on the high-temperature operation and reliability of the Si-doped hafnium oxide (HSO) ferroelectric FET (FeFET) emerging memory. In this study, we explore the role of high-temperature operation of the ferroelectric (FE) material on the FeFET in the temperature range of 40-120 °C. The inverse memory window (MW) dependence on temperature le...
Conference Paper
The impact of the ferroelectric (FE) wakeup phenomenon on the reliability of fluorite structure-based laminated Si-doped hafnium oxide (HSO) FeFET memory cells is reported. The post wakeup cycling shows a strong change in the optimal program/erase (PG/ER) write conditions. A shift towards lower PG/ER switching conditions at a higher memory window (...
Conference Paper
Full-text available
We report 1-3 bit/cell FeFET operation through optimized HSO and HZO ferroelectric laminate layers using alumina interlayers. Memory window up to 3.5V, switching speed of 300ns, 10 years retention, and 10^4 endurance are reported. The gate stack lamination merits are discussed with insight potential of FeFET as an MLC memory.

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