Fernando García-Redondo

Fernando García-Redondo
imec

PhD in Electronics

About

40
Publications
4,873
Reads
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181
Citations
Introduction
Hi, I am Fernando García Redondo. As a PhD. & Electronic Systems Engineer, I drive projects, solve problems and widen my knowledge in the field of future electronic technologies, circuits and systems design. My main research lines are: Memristor/RRAM modeling and simulation, novel circuits design and simulation approaches for neuromorphic applications and reliable circuit design including PVT and radiation. https://www.garciaredondo.com/research.html
Additional affiliations
March 2018 - present
ARM
Position
  • Researcher
February 2011 - March 2020
Universidad Politécnica de Madrid
Position
  • PhD Student

Publications

Publications (40)
Article
Always-on TinyML perception tasks in IoT applications require very high energy efficiency. Analog compute-in-memory (CiM) using non-volatile memory (NVM) promises high energy efficiency and self-contained on-chip model storage. However, analog CiM introduces new practical challenges, including conductance drift, read/write noise, fixed analog-to-di...
Preprint
Full-text available
Always-on TinyML perception tasks in IoT applications require very high energy efficiency. Analog compute-in-memory (CiM) using non-volatile memory (NVM) promises high efficiency and also provides self-contained on-chip model storage. However, analog CiM introduces new practical considerations, including conductance drift, read/write noise, fixed a...
Preprint
Full-text available
Magnetic Tunnel Junctions (MTJs) constitute the novel memory element in STT-MRAM, which is ramping to production at major foundries as an eFlash replacement. MTJ switching exhibits a stochastic behavior due to thermal fluctuations, which is modeled by s-LLGS and Fokker-Planck (FP) equations. This work implements and benchmarks Finite Volume Method...
Preprint
Full-text available
This paper presents a physics-based modeling framework for the analysis and transient simulation of circuits containing Spin-Transfer Torque (STT) Magnetic Tunnel Junction (MTJ) devices. The framework provides the tools to analyze the stochastic behavior of MTJs and to generate Verilog-A compact models for their simulation in large VLSI designs, ad...
Preprint
Full-text available
Deep Neural Networks (DNN) applications are increasingly being deployed in always-on IoT devices. However, the limited resources in tiny microcontroller units (MCUs) limit the deployment of the required Machine Learning (ML) models. Therefore alternatives to traditional architectures such as Computation-In-Memory based on resistive nonvolatile memo...
Article
Memristor crossbar arrays naturally accelerate neural networks applications by carrying out parallel multiply-add operations. Due to the abrupt SET operation characterizing most RRAM devices, on-chip training usually requires either from iterative write/read stages, large and variations-sensitive circuitry, or both, to achieve multilevel capabiliti...
Article
Every year, smarter and more complex attacks compromise electronic systems. Unauthorized access to the secure keys stored within nonvolatile memories is a concerning problem affecting secure applications. This paper presents an RRAM architecture secured against firmware and physical attacks. If a hack attempt occurs, and taking advantage of the thr...
Thesis
Full-text available
Resistive switching technologies are regarded as one of the most promising alternatives to future storing and computing systems. Characteristics like nonvolatility, very-high-storage density, low power consumption, as well as the compatibility with traditional CMOS circuits, raise the attention of device manufacturers, circuit designers and system...
Conference Paper
Full-text available
In this work, we propose a physical memristor/resistive switching device SPICE compact model, that is able to accurately fit both unipolar/bipolar devices settling to its current-voltage relationship. The proposed model is capable of reproducing essential device characteristics such as multilevel storage, temperature dependence, cycle/event handlin...
Conference Paper
Full-text available
Resistive switching memories (RRAM) are an attractive alternative to non-volatile storage and non- conventional computing systems, but their behavior strongly depends on the cell features, driver circuit and working conditions. In particular, the circuit temperature and the writing voltage scheme become critical issues, determining resistive switch...
Article
Resistive switching memories (RRAM) are one of the most promising alternatives for non-volatile storage and non-conventional computing systems. However, their behavior, and therefore their reliability is limited by technology intrinsic constraints. Standard CMOS reliability analyses do not take into account RRAM related misbehaviors. Consequently,...
Article
Resistive switching memories [resistive RAM (RRAM)] are an attractive alternative to nonvolatile storage and nonconventional computing systems, but their behavior strongly depends on the cell features, driver circuit, and working conditions. In particular, the circuit temperature and writing voltage schemes become critical issues, determining resis...
Conference Paper
Nowadays the uncertainties produced by the com- bined effect of PVT Variations together with radiation dramati- cally compromises electronic systems behavior. Usually, radiation effects are studied from a digital point of view, analyzing upset error ratios and their consequences. In this work we redefine the analysis methodology of combined effects...
Conference Paper
Nanometer technologies are exposed to several sources of variability, among these, Power Supply Noise (PSN) has become a mayor challenge. This paper provides a broad perspective of the causes and effects of PSN along with the evolution of techniques that have been proposed to deal with it, which heavily rely on the information that can be gathered...
Conference Paper
The effects caused by variability, temperature, radiation or aging may compromise the reliability of electronic circuits. Circuits designers must consider their combined effects early during the design cycle, even though it is a time and effort demanding task. In this work we present a methodology and simulation framework for the reliable design of...
Article
In this work we propose a physical memristor/resistive switching device SPICE compact model, that is able to accurately fit both unipolar/bipolar devices settling to its current-voltage relationship. The proposed model is capable of reproducing essential device characteristics such as multilevel storage, temperature dependence, cycle/event handling...
Conference Paper
New CMOS technologies such as SOI or FinFET are expected to enhance SRAM radiation-induced soft error rates thanks to a reduction on the charge collected as the devices get smaller. In this work we analyze how the radiation hardening capabilities of SRAMs are affected when process variations are considered by simulating cells using a predictive Fin...
Article
Since the memristor was first built in 2008 at HP Labs, no end of devices and models have been presented. Also, new applications appear frequently. However, the integration of the device at the circuit level is not straightforward, because available models are still immature and/or suppose high computational loads, making their simulation long and...
Conference Paper
Nowadays integrated circuit reliability is challenged by both variability and working conditions. Environmental radi- ation has become a major issue when ensuring the circuit correct behavior. The required radiation and later analysis performed to the circuit boards is both fund and time expensive. The lack of tools which support pre-manufacturing...
Conference Paper
The usual way of modeling variability using threshold voltage shift and drain current amplification is becoming inaccurate as new sources of variability appear in sub-22nm devices. In this work we apply the four-injector approach for variability modeling to the simulation of SRAMs with predictive technology models from 20nm down to 7nm nodes. We sh...
Conference Paper
Full-text available
The implementation of a radar system is complex and expensive. It is then desirable to incorparate new capabilities through the lifetime of this kind of systems without modifying their underlying hardware. In this work we have taken advantage of the reconfigurability of FPGAs to incorporate pulse compression techniques in an already implemented sys...
Conference Paper
Full-text available
A common task in electronic design is the mod-eling and simulation of new devices. Sometimes the variety of models, the mathematical complexity of these or the existence of convergence problems during their simulation makes a difficult labor the development of software simulation tools. Moreover, the impact that PVT variations have in current nanom...
Article
The memory-resistor or memristor is a new electrical element characterized by a nonlinear charge-flux relation. This device poses many challenging problems, in particular from the circuit modeling point of view. In this paper, we address the index analysis of certain differential-algebraic models of memristive circuits; specifically, our attention...
Conference Paper
In the recent years the missing fourth component, the memristor, was successfully synthesized. However, the mathematical complexity and variety of the models behind this component, in addition to the existence of convergence problems in the simulations, make the design of memristor-based applications long and difficult. In this work we present a me...
Conference Paper
Dynamic thermal management techniques require a collection of on-chip thermal sensors that imply a significant area and power overhead. Finding the optimum number of temperature monitors and their location on the chip surface to optimize accuracy is an NP-hard problem. In this work we improve the modeling of the problem by including area, power and...

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Projects

Projects (3)
Project
The main goal of the project is two-fold: 1) To provide tools and methodologies for the analysis of RRAM-CMOS hybrid circuits, regarding their reliability and performance. 2) To provide system-level designs addressing the challenges imposed by resistive switching technologies: variability, temperature dependence, degradation, etc.
Project
Physical memristor/RRAM/resistive switching device SPICE compact model, that is able to accurately fit both unipolar/bipolar devices settling to its current-voltage relationship. Project page: http://vlsi.die.upm.es/memristor_spice_model GitHub: https://github.com/fgr1986/vlsi_memristor_compact_model Main capabilities: Accurate modeling of dynamic resistance, mimicking physical device response. Modeling switching behavior for bipolar/unipolar devices. Cycle and switching event count. Modular and extensible: Temperature aware case of study. Variability aware: voltage/cycle dependent RTN, cycle to cycle conduction changes. Provision of variability dynamics and resistive state retention handling, defining how the device degrades through time/cycle stress. Explicit support for multi-level storage, allowing the modeling of Pristine State -the initial High Resistive State (HRS) prior any electroforming-. Project page: http://vlsi.die.upm.es/memristor Both LT-Spice and Cadence Spectre compact models/test benches are provided.