Federico Panciera

Federico Panciera
French National Centre for Scientific Research | CNRS · Centre for Nanoscience and Nanotechnology

PhD

About

44
Publications
4,234
Reads
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861
Citations
Introduction
Federico Panciera currently works at the Centre for Nanoscience and Nanotechnology (C2N), CNRS/University of Paris-Saclay. Federico does research in Solid-state Physics, Materials Science, Crystal Growth and Nanotechnology.
Additional affiliations
February 2018 - present
French National Centre for Scientific Research
Position
  • Researcher
Description
  • In situ TEM
February 2017 - January 2018
National University of Singapore
Position
  • Research Associate
April 2015 - April 2015
Material Research Society
Position
  • Tutorial Instructor
Description
  • “Structural and Functional Characterization of Nanowires by in-situ TEM” Tutorial at Materials Research Society Spring Meeting April 6-10, 2015, San Francisco, USA

Publications

Publications (44)
Article
Full-text available
Nanowire growth by the vapour-liquid-solid (VLS) process enables a high level of control over nanowire composition, diameter, growth direction, branching and kinking, periodic twinning, and crystal structure. The tremendous impact of VLS-grown nanowires is due to this structural versatility, generating applications ranging from solid-state lighting...
Article
Controlled formation of non-equilibrium crystal structures is one of the most important challenges in crystal growth. Catalytically-grown nanowires provide an ideal system for studying the fundamental physics of phase selection, while also offering the potential for novel electronic applications based on crystal polytype engineering. Here we image...
Article
Full-text available
Semiconductor nanowires with precisely controlled structure, and hence well-defined electronic and optical properties, can be grown by self-assembly using the vapor-liquid-solid process. The structure and chemical composition of the growing nanowire is typically determined by global parameters such as source gas pressure, gas composition and growth...
Article
Full-text available
Crystal phase switching between the zincblende and wurtzite structures in III-V nanowires is crucial from the fundamental viewpoint as well as for electronic and photonic applications of crystal phase heterostructures. Here, the results of in situ monitoring of self-catalysed vapour-liquid-solid growth of GaAs nanowires by molecular beam epitaxy in...
Article
Full-text available
In situ transmission electron microscopy reveals that an atomically thin crystalline phase at the surface of liquid Au–Si is stable over an unexpectedly wide range of conditions. By measuring the surface structure as a function of liquid temperature and composition, a simple thermodynamic model is developed to explain the stability of the ordered p...
Article
In this paper, we followed the formation sequences of the different manganese silicides by performing simple annealing at different temperatures of the deposited manganese (Mn) on silicon (Si) substrate. Phase change and transition temperatures have been reported. In situ x-ray diffraction (XRD) is used in two different chambers and the results obt...
Article
Full-text available
We present a growth process relying on pulsed laser deposition for the elaboration of complex van der Waals heterostructures on large scales, at a 400 °C CMOS-compatible temperature. Illustratively, we define a multilayer quantum well geometry through successive in situ growths, leading to WSe2 being encapsulated into WS2 layers. The structural con...
Article
The droplet contact angle and morphology of the growth interface (vertical, tapered or truncated facets) are known to affect the zincblende (ZB) or wurtzite (WZ) crystal phase of III-V nanowires (NWs) grown by the vapor-liquid-solid method. Here, we present a model which describes the dynamics of the morphological evolution in self-catalyzed III-V...
Article
Correlating the structure and composition of nanowires grown by the vapour-liquid-solid (VLS) mechanism with their electrical properties is essential for designing nanowire devices.In situtransmission electron microscopy (TEM) that can image while simultaneously measuring the current-voltage (I-V) characteristics of individual isolated nanowires is...
Article
Full-text available
The first stages of the growth of the NiSi phase at the expense of θ-Ni2Si have been studied mainly by in-situ XRD measurements and atom probe tomography (APT) analysis. In-situ XRD isothermal annealing at different temperatures were performed on several samples in order to monitor the phase formation sequence, the time at which NiSi phase begin to...
Article
Silicon germanium (Si x Ge1-x or SiGe) is an important semiconductor material for the fabrication of nanowire-based gate-all-around transistors in the next-generation logic and memory devices. During the fabrication process, SiGe can be used either as a sacrificial layer to form suspended horizontal Si nanowires or, because of its higher carrier mo...
Article
The growth of catalytic liquid-metal nanodroplets on flat substrates is essential for many technological applications. However, the detailed nucleation and growth dynamics of these nanodroplets remain unclear. Here, using in situ transmission electron microscopy (TEM) imaging, we track in real time the growth of individual Ga nanodroplets from a be...
Article
Molecular Beam Epitaxy of Germanium in the Atomic-Resolution Transmission Electron Microscope - Volume 25 Issue S1 - Éric Ngo, Federico Panciera, Jean-Christophe Harmand, Weixi Wang, Martin Foldyna, Pere Roca i Cabarrocas, Laurent Travers, Ileana Florea, Jean-Luc Maurice
Article
Crystal growth often proceeds by atomic step flow. When the surface area available for growth is limited, the nucleation and progression of the steps can be affected. This issue is particularly relevant to the formation of nanocrystals. We examine the case of Au-catalyzed GaAs nanowires, which we grow in a transmission electron microscope. Our in s...
Article
Growth Dynamics of Ga Nanodroplets on 2D Substrate - Volume 24 Supplement - Zhaslan Baraissov, Federico Panciera, Jean-Christophe Harmand, Gilles Patriarche, Utkur Mirsaidov
Article
The nucleation and lateral growth are more and more important steps for the thin film growth of a phase (silicide, intermetallic…) when the thin film thickness is in the range or below 10 nm. It might become crucial for contact in microelectronics that are in this range of thickness for actual devices and affect the properties of contacts in differ...
Chapter
Control of the electrical properties of Si nanowires, and in particular their connection to the macroscale environment, is important when developing nanowire applications. We therefore use in situ TEM to create suspended Si nanowire devices so that we can correlate the structure and transport properties of the nanowires and their contacts. In an ul...
Article
div class="title">In-Situ TEM Investigation of Controlled VLS Silicon Nanowire Device Formation and Characterization - Volume 22 Issue S5 - S.B. Alam, F. Panciera, M.M Norton, O. Hansen, F.M. Ross, K. Mølhave
Article
We visualize atomic level dynamics during Si nanowire growth using aberration corrected environmental transmission electron microscopy, and compare with lower pressure results from ultra-high vacuum microscopy. We discuss the importance of higher pressure observations for understanding growth mechanisms and describe protocols to minimize effects of...
Article
The formation of self-assembled contacts between vapor-liquid-solid grown silicon nanowires and flat silicon surfaces was imaged in situ using electron microscopy. By measuring the structural evolution of the contact formation process, we demonstrate how different contact geometries are created by adjusting the balance between silicon deposition an...
Article
Full-text available
div class="title">Building and Imaging Silicide Nanostructures in Nanowires - Volume 21 Issue S3 - F. Panciera, Y.-C. Chou, M. C. Reuter, D. Zakharov, E. A. Stach, E. Jensen, K. Mtolhave, S. Hofmann, F. M. Ross
Data
Incorporation of a NiSi2 nanocrystal into a Si nanowire, recorded at 400 frames per second in the ETEM at 550°C in 5×10-5 Torr Si2H6. Real time.
Data
A voltage between +80 and -100 V was applied between a 50 nm diameter nanowire at 500ºC and the counter electrode (CE), 170 nm away. At Si2H6 pressure of 1.3 × 10-7 Torr the wire does not noticeably grow. The graphs synchronized with the images show the applied voltage as function of time and the droplet aspect ratio as function of voltage. The vid...
Data
-52 V was applied between the CE and a nanowire growing in a <111> direction that was not perpendicular to the CE. Growth conditions are 510ºC and ~1.6 × 10-5 Torr of Si2H6 . The asymmetric droplet deformation and subsequent kinking are visible. The video is recorded at 1 frame / s and played at 12 frames / s (Speed 36×).
Article
The reaction between an 11 nm Ni(10 at.% Pt) film on a Si substrate has been examined by in situ X-ray diffraction (XRD), atom probe tomography (APT) and transmission electron microscopy (TEM). In situ XRD experiments show the unusual formation of a phase without an XRD peak through consumption of the metal. According to APT, this phase has an Si c...
Article
In microelectronics, the increase in complexity and the reduction of devices dimensions make essential the development of new characterization tools and methodologies. Indeed advanced characterization methods with very high spatial resolution are needed to analyze the redistribution at the nanoscale in devices and interconnections. The atom probe t...
Article
The Ni suicide formed at low temperature on Si nanowire has been analyzed by atom probe tomography (APT) thanks to a special technique for sample preparation. A method of preparation has been developed using the focused ion beam (FIB) for the APT analysis of nanowires (NWs). This method allow for the measurement of the radial distribution when a NW...
Article
Metallic silicides have been used as contact materials on source/drain and gate in metal‐oxide semiconductor (MOS) structure for 40 years. Since the 65 nm technology node, NiSi is the preferred material for contact in microelectronic due to low resistivity, low thermal budget, and low Si consumption. Ni(Pt)Si with 10 at.% Pt is currently employed i...
Article
In this study, TiN/La2O3/HfSiON/SiO2/Si gate stacks with thick high-k (HK) and thick pedestal oxide were used. Samples were annealed at different temperatures and times in order to characterize in detail the interaction mechanisms between La and the gate stack layers. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) measurements performed...
Article
Full-text available
The fluorine redistribution during partial solid-phase-epitaxial-regrowth at 650 °C of a preamorphized Si substrate implanted by F was investigated by atom probe tomography (APT), transmission electron microscopy, and secondary ions mass spectrometry. Three-dimensional spatial distribution of F obtained by APT provides a direct observation of F-ric...
Article
Full-text available
The three-dimensional spatial distribution of Al in the high-k metal gates of metal-oxide-semiconductor field-effect-transistors is measured by atom probe tomography. Chemical distribution is correlated with the transistor voltage threshold (VTH) shift generated by the introduction of a metallic Al layer in the metal gate. After a 1050 °C annealing...
Article
Full-text available
Atom probe tomography was used to study the redistribution of platinum and arsenic atoms after Ni(Pt) silicidation of As-doped polycrystalline Si. These measurements were performed on a field-effect transistor and compared with those obtained in unpatterned region submitted to the same process. These results suggest that Pt and As redistribution du...
Article
Full-text available
The redistribution of fluorine during solid phase epitaxial regrowth (SPER) of preamorphized Si has been experimentally investigated, explained, and simulated, for different F concentrations and temperatures. We demonstrate, by a detailed analysis and modeling of F secondary ion mass spectrometry chemical-concentration profiles, that F segregates i...
Article
Full-text available
We investigated the thermal evolution of end-of-range (EOR) defects in germanium and their impact on junction thermal stability. After solid-phase epitaxial regrowth of a preamorphized germanium layer, EOR defects exhibiting dislocation loop-like contrast behavior are present. These defects disappear during thermal annealing at 400 °C, while boron...

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