Farsane Tabataba-Vakili

Farsane Tabataba-Vakili
Ludwig-Maximilians-University of Munich | LMU · Faculty of Physics

Doctor of Philosophy

About

17
Publications
3,655
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147
Citations
Introduction
Postdoctoral Fellow at Ludwig-Maximilians-Universität (LMU) Munich in the Nanophotonics group of Prof. Alex Högele working on cryogenic optical spectroscopy of excitons and polaritons in transition metal dichalcogenides.
Additional affiliations
October 2016 - present
November 2014 - March 2016
Palo Alto Research Center
Position
  • Intern and Master's thesis student
November 2013 - October 2014
Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut
Position
  • Student Research Assistant
Education
October 2013 - May 2016
Technische Universität Berlin
Field of study
  • Experimental Physics
October 2010 - October 2013
Technische Universität Berlin
Field of study
  • Physics

Publications

Publications (17)
Article
III-Nitride semiconductors are promising materials for on-chip integrated photonics. They provide a wide transparency window from the ultra-violet to the infrared that can be exploited for second-order nonlinear conversions. Here we demonstrate a photonics platform based on epitaxial GaN-on-insulator on silicon. The transfer of the epi-material on...
Article
Microdisks fabricated with III-nitride materials grown on GaN substrates are demonstrated, taking advantage of the high material quality of homoepitaxial films and advanced micro-fabrication processes. The epitaxial structure consists of InGaN/GaN multi-quantum wells (MQWs) sandwiched between AlGaN/GaN and InAlN/GaN superlattices as cladding layers...
Thesis
Full-text available
III-nitride semiconductors (AlN, GaN, InN and their alloys) have become an integral part of our daily lives as they are used in white, blue, green, and ultraviolet light emitting diodes, as well as laser diodes and power and high frequency electronics. This material is highly versatile due to its tuneable large direct band gap from the ultraviolet...
Article
Full-text available
Low-threshold lasing under pulsed optical pumping is demonstrated at room temperature for III-nitride microdisks with InGaN/GaN quantum wells on Si in the blue spectral range. Thresholds in the range of 18 kW / cm 2 have been achieved along with narrow linewidths of 0.07 nm and a large peak-to-background dynamic of 300. We compare this threshold ra...
Article
Full-text available
Ultraviolet microdisk lasers are integrated monolithically into photonic circuits using a III-nitride-on-silicon platform with gallium nitride (GaN) as the main waveguide layer. The photonic circuits consist of a microdisk and a pulley waveguide, terminated by out-coupling gratings. In this Letter, we measure quality factors up to 3500 under contin...
Article
Full-text available
On-chip microlaser sources in the blue constitute an important building block for complex integrated photonic circuits on silicon. We have developed photonic circuits operating in the blue spectral range based on microdisks and bus waveguides in III-nitride on silicon. We report on the interplay between microdisk-waveguide coupling and its optical...
Article
Full-text available
Nanophotonic circuits using group III-nitrides on silicon are still lacking one key component: efficient electrical injection. In this paper we demonstrate an electrical injection scheme using a metal microbridge contact in thin III-nitride on silicon mushroom-type microrings that is compatible with integrated nanophotonic circuits with the goal of...
Conference Paper
We present our progresses towards active photonic circuits based on III-nitride semiconductors epitaxially grown on silicon. We study in particular the critical coupling of lasing InGaN/GaN microdisks to adjacent suspended waveguides.
Article
Full-text available
The main interest of group-III nitride nanophotonic circuits is the integration of active structures and laser sources. A photonic platform of group-III nitride microdisk lasers integrated on silicon (Si) and emitting in the blue spectral range is demonstrated. The active microdisks are side-coupled to suspended bus waveguides and the coupled emiss...
Article
Full-text available
III-nitride-on-silicon L3 photonic crystal cavities with resonances down to 315 nm and quality factors (Q) up to 1085 at 337 nm have been demonstrated. The reduction of the quality factor with decreasing wavelength is investigated. Besides the quantum well absorption below 340 nm, a noteworthy contribution is attributed to the residual absorption p...
Article
AlGaN-based multiple-quantum-well (MQW) heterostructures were irradiated with a pulsed electron beam. Excitation with a beam energy of 12 keV and a beam current of 4.4 mA produced cathodoluminescense at λ = 246 nm with a measured peak output power of > 200 mW. The emission is dominated by radiative recombination from the MQW up to the maximum teste...
Article
GaN quantum dots (QDs) are realized on (0001) AlN templates by growing a thin GaN layer on an AlN buffer layer and applying a subsequent desorption step without ammonia present. A growth interruption (GRI), which is commonly applied after the GaN growth allowing for QD formation, is systematically investigated regarding the temperature, duration an...
Thesis
Full-text available
In this bachelor thesis the morphological evolution of GaN quantum dots (QDs) on AlN is studied with the goal to determine the major influences to induce a 2D to 3D transition. We investigate three sample series, which were grown by metal organic vapor phase epitaxy (MOVPE) with atomic force microscopy (AFM). The parameters growth interruption (GRI...

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