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Fabrice Iacovella

Fabrice Iacovella
LTM · Division of Materials and Devices

PhD

About

13
Publications
4,764
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179
Citations

Publications

Publications (13)
Article
Ozone (O3) is one of the main indoor as well as environmental air pollutant, thus its detection is of great importance. As a result, plenty of materials have been tested as O3 gas sensing elements, over the last fifty years. In this work, the gas sensing performance of Copper (I) Thiocyanate (CuSCN) powder against O3, is presented. The structure of...
Article
Since the isolation of graphene, layered semiconducting materials, such as graphene oxide and molybdenum disulfide (MoS2), have been used in flexible electronics interfaced with organic semiconductors. The knowledge of their interfacial properties is in progress as it is crucial for device optimization. In this study, we have investigated the elect...
Article
Full-text available
Technological applications involving 2D MoS2 require transfer of CVD grown material from its original substrate and subsequent lithographic processes. Inevitably, those steps contaminate the surface of the 2D material with polymeric residues affecting the electronic and optical properties of the MoS2. Annealing in forming gas is considered an effic...
Article
Full-text available
Gallium nitride (GaN) all-around (wrap) gate vertical nanowire (V-NW) field-effect transistors (FETs) are favorable for enhanced electrostatic control of the gate and selectivity for normally on/off operation. In this work, GaN V-NW FETs with a Schottky barrier gate (V-NW MESFETs), were fabricated for the first time. A nanofabrication process with...
Article
Full-text available
Hydrogels have been extensively used in the field of biomedical applications, offering customizable natural, synthetic or hybrid materials, particularly relevant in the field of tissue engineering. In the bioelectronics discipline, hydrogels are promising mainly as sensing platforms with or without encapsulated cells, showing great potential in hea...
Article
Full-text available
Tuning the band structure and, in particular, gap opening in 1D and 2D materials through their deformation is a promising approach for their application in modern semiconductor devices. However, there is an essential breach between existing laboratory scale methods applied for deformation of low-dimensional materials and the needs of large-scale pr...
Article
Shubnikov-de-Haas oscillations were studied under high magnetic field in Bi$_2$Se$_3$ nanostructures grown by Chemical Vapor Transport, for different bulk carrier densities ranging from $3\times10^{19}\text{cm}^{-3}$ to $6\times10^{17}\text{cm}^{-3}$. The contribution of topological surface states to electrical transport can be identified and separ...
Article
Full-text available
Shubnikov-de-Haas oscillations were studied under high magnetic field in Bi$_2$Se$_3$ nanostructures grown by Chemical Vapor Transport, for different bulk carrier densities ranging from $3\times10^{19}\text{cm}^{-3}$ to $6\times10^{17}\text{cm}^{-3}$. The contribution of topological surface states to electrical transport can be identified and separ...
Conference Paper
Layered materials have emerged in a variety of applications and novel devices. Such materials as graphene, dichalcogenides (MoS2, MoSe2, WS2) and others exhibit entirely new physics, and advantages which we only now begin to comprehend. Besides active devices which have attracted strong attention, such materials are also interesting for radiation d...
Thesis
Full-text available
Cette thèse présente une étude de transport électronique dans des gaz d’électrons bidimensionnels sous champ magnétique intense (60T). La première partie est dédiée au gaz d’électrons formé à l’interface entre deux isolants de bandes LaAlO3/SrTiO3. Sur la plage de champ magnétique exploré, la non-linéarité de la résistance de Hall permet d’établir...
Article
In this study, we address the electronic properties of conducting films constituted of an array of randomly distributed few layer graphene patches and investigate on their most salient galvanometric features in the moderate and extreme disordered limit. We demonstrate that, in annealed devices, the ambipolar behaviour and the onset of Landau level...
Article
During the night of 01-02 September, 2009, seventeen distinct sprite events including 3 halos were observed above a storm in north-western Mediterranean Sea, with a video camera at Pic du Midi (42.93N; 0.14E; 2877 m). The sprites occurred at distances between 280 and 390 km which are estimated based on their parent CG location. The MCS-type storm w...
Article
We present data on the electrical transport properties of highly-doped silicon-on-insulator quantum dots under the effect of pulsed magnetic fields up to 48 T. At low field intensities, B<7 T, we observe a strong modification of the conductance due to the destruction of weak localization whereas at higher fields, where the magnetic field length bec...

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