Evgeny Alexeev

Evgeny Alexeev
University of Cambridge | Cam · Department of Engineering

PhD

About

27
Publications
9,482
Reads
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1,431
Citations
Citations since 2017
24 Research Items
1417 Citations
20172018201920202021202220230100200300
20172018201920202021202220230100200300
20172018201920202021202220230100200300
20172018201920202021202220230100200300
Additional affiliations
October 2019 - present
University of Cambridge
Position
  • Research Associate
October 2019 - present
University of Cambridge
Position
  • Research Associate
June 2015 - September 2019
The University of Sheffield
Position
  • PostDoc Position
Education
November 2011 - June 2015
University of Exeter
Field of study
  • Ultrafast optical spectroscopy of graphene
September 2009 - August 2011
Peter the Great St.Petersburg Polytechnic University
Field of study
  • Physics and Techniques of Semiconductors · MSc
September 2005 - September 2009
Peter the Great St.Petersburg Polytechnic University
Field of study
  • Physics and Techniques of Semiconductors

Publications

Publications (27)
Preprint
Full-text available
Janus transition-metal dichalcogenide monolayers are fully artificial materials, where one plane of chalcogen atoms is replaced by chalcogen atoms of a different type. Theory predicts an in-built out-of-plane electric field, giving rise to long-lived, dipolar excitons, while preserving direct-bandgap optical transitions in a uniform potential lands...
Article
Full-text available
When a twist angle is applied between two layered materials (LMs), the registry of the layers and the associated change in their functional properties are spatially modulated, and a moiré superlattice arises. Several works explored the optical, electric, and electromechanical moiré-dependent properties of such twisted LMs but, to the best of our kn...
Conference Paper
Group-IV colour centres in diamond are a promising light-matter interface for quantum networking devices. We demonstrate multiaxis coherent control of the SnV spin-qubit via an all-optical stimulated Raman drive between the ground and excited states.
Article
Full-text available
Group-IV color centers in diamond are a promising light-matter interface for quantum networking devices. The negatively charged tin-vacancy center (SnV) is particularly interesting, as its large spin-orbit coupling offers strong protection against phonon dephasing and robust cyclicity of its optical transitions toward spin-photon-entanglement schem...
Article
Full-text available
Interlayer excitons in layered materials constitute a novel platform to study many-body phenomena arising from long-range interactions between quantum particles. Long-lived excitons are required to achieve high particle densities, to mediate thermalisation, and to allow for spatially and temporally correlated phases. Additionally, the ability to co...
Preprint
Full-text available
Group-IV color centers in diamond are a promising light-matter interface for quantum networking devices. The negatively charged tin-vacancy center (SnV) is particularly interesting, as its large spin-orbit coupling offers strong protection against phonon dephasing and robust cyclicity of its optical transitions towards spin-photon entanglement sche...
Article
Full-text available
Energy relaxation of photo-excited charge carriers is of significant fundamental interest and crucial for the performance of monolayer transition metal dichalcogenides in optoelectronics. The primary stages of carrier relaxation affect a plethora of subsequent physical mechanisms. Here we measure light scattering and emission in tungsten diselenide...
Conference Paper
While the tin-vacancy center in diamond (SnV) has demonstrated excellent optical properties [1], spin control has remained elusive. We demonstrate multi-axis control of the SnV spin via an all-optical drive, and use this to demonstrate T 2 = 0.30(8) ms.
Article
Van der Waals heterobilayers based on 2D transition metal dichalcogenides have been recently shown to support robust and long-lived valley polarization for potential valleytronic applications. However, the roles of the chemical composition and geometric alignment of the constituent layers in the underlying dynamics remain largely unexplored. Here w...
Article
The availability of accessible fabrication methods based on deterministic transfer of atomically thin crystals has been essential for the rapid expansion of research into van der Waals heterostructures. An inherent issue of these techniques is the deformation of the polymer carrier film during the transfer, which can lead to highly non-uniform stra...
Preprint
Full-text available
Energy relaxation of photo-excited charge carriers is of significant fundamental interest and crucial for the performance of monolayer (1L) transition metal dichaclogenides (TMDs) in optoelectronics. We measure light scattering and emission in 1L-WSe$_2$ close to the laser excitation energy (down to~$\sim$0.6meV). We detect a series of periodic max...
Preprint
Van der Waals heterobilayers based on 2D transition metal dichalcogenides have been recently shown to support robust and long-lived valley polarization for potential valleytronic applications. However, the role of the band structure and alignment of the constituent layers on the underlying dynamics remains largely unexplored. Here we study spin-val...
Preprint
Full-text available
Interlayer excitons in layered materials constitute a novel platform to study many-body phenomena arising from long-range interactions between quantum particles. The ability to localise individual interlayer excitons in potential energy traps is a key step towards simulating Hubbard physics in artificial lattices. Here, we demonstrate spatial local...
Article
Full-text available
Chemical vapour deposition (CVD) growth is capable of producing multiple single-crystal islands of atomically thin transition metal dichalcogenides (TMDs) over large areas. Subsequent merging of perfectly epitaxial domains can lead to single-crystal monolayer sheets, a step towards scalable production of high quality TMDs. For CVD growth to be effe...
Preprint
Full-text available
The availability of accessible fabrication methods based on deterministic transfer of atomically thin crystals has been essential for the rapid expansion of research into van der Waals heterostructures. An inherent issue of these techniques is the deformation of the polymer carrier film during the transfer, which can lead to highly non-uniform stra...
Preprint
Full-text available
CVD growth is capable of producing multiple single crystal islands of atomically thin TMDs over large area substrates, with potential control of their morphology, lateral size, and epitaxial alignment to substrates with hexagonal symmetry. Subsequent merging of epitaxial domains can lead to single-crystal monolayer sheets - a step towards scalable...
Article
Full-text available
An Amendment to this paper has been published and can be accessed via a link at the top of the paper.
Article
Full-text available
Atomically thin layers of two-dimensional materials can be assembled in vertical stacks that are held together by relatively weak van der Waals forces, enabling coupling between monolayer crystals with incommensurate lattices and arbitrary mutual rotation. Consequently, an overarching periodicity emerges in the local atomic registry of the constitu...
Article
Full-text available
For many of the envisioned optoelectronic applications of graphene it is crucial to understand the sub-picosecond carrier dynamics immediately following photoexcitation, as well as the effect on the electrical conductivity - the photoconductivity. Whereas these topics have been studied using various ultrafast experiments and theoretical approaches,...
Article
Full-text available
Strong-coupling of monolayer metal dichalcogenide semiconductors with light offers encouraging prospects for realistic exciton devices at room temperature. However, the nature of this coupling depends extremely sensitively on the optical confinement and the orientation of electronic dipoles and fields. Here, we show how plasmon strong coupling can...
Article
Strong-coupling of monolayer metal dichalcogenide semiconductors with light offers encouraging prospects for realistic exciton devices at room temperature. However, the nature of this coupling depends extremely sensitively on the optical confinement and the orientation of electronic dipoles and fields. Here, we show how plasmon strong coupling can...
Article
We report on the exciton and trion density dynamics in a single layer of MoSe$_2$, resonantly excited and probed using three-pulse four-wave mixing (FWM), at temperatures from 300K to 77K . A multi-exponential third-order response function for amplitude and phase of the heterodyne-detected FWM signal including four decay processes is used to model...
Article
By vertically stacking monolayer crystals of transition metal dichalcogenides (TMD) and other layered materials, a new type of heterostructures can be achieved, exhibiting novel opto-electronic properties. Such van der Waals heterostructures offer a platform for developing a new generation of atomically thin, transparent and flexible devices. The p...
Article
We present a detailed investigation of the exciton and trion dynamics in naturally doped MoSe2 and WSe2 single atomic layers as a function of temperature in the range 10-300K under above band-gap laser excitation. By combining time-integrated and time-resolved photoluminescence (PL) spectroscopy we show the importance of exciton and trion localizat...
Article
Full-text available
The modification of single layer graphene due to intense, picoseconds near-infrared laser pulses is investigated. We monitor the stable changes introduced to graphene upon photoexcitation using Raman spectroscopy. We find that photoexcitation leads to both a local increase in hole doping and a reduction in compressive strain. Possible explanations...

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