Emad H. Hussein

Emad H. Hussein
Al-Mustansiriya University · Department of Physics

Dr.rer.nat -Physics / Humboldt-Universität zu Berlin

About

19
Publications
5,943
Reads
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72
Citations
Citations since 2017
11 Research Items
70 Citations
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201720182019202020212022202305101520
201720182019202020212022202305101520
Introduction
Emad H. H. currently works at the Department of Physics, Mustansiriyah University. Emad does research in Materials Science and nanostructures. His most recent publication is Modified Hydrothermal Preparation of ZnO/NiO Nano-Heterojunction for Enhancement of Photocatalytic Activity
Additional affiliations
December 2005 - present
Al-Mustansiriya University
Position
  • Professor (Assistant)

Publications

Publications (19)
Article
This work describes a comparative study on zinc oxide/nickel oxide (ZnO/NiO) nanostructures deposited on glass substrates by chemical bath and modified bath, (CBD), and (M-CBD) techniques. The photoactivity of ZnO/NiO nanostructure films was tested on Rhodamine B (RB) dye under sunlight. The nanostructure films were evaluated using various characte...
Article
Full-text available
Fabrication of zinc oxide/nickel oxide (ZnO/NiO) nano-heterojunction films on glass substrates using hydrothermal and modified hydrothermal techniques was investigated. Various tools were employed for the evaluation of the structural nature and to determine the optical properties of the heterojunction. Besides, the photoactivity of the heterostruct...
Article
Abstract We report on an affordable, simple, and efficient technique to synthesize ZnO/NiO nanoheterostructure films for the photo-decolorization of methylene blue (MB) dye. Two chemical bath deposition (CBD) routes were adopted: traditional CBD and modified CBD (M-CBD). The nanostructure films were evaluated using different tools: x-ray diffractio...
Article
Full-text available
Vertically oriented titanium dioxide nanotube arrays (TNTAs) decorated with NiO nanoparticles (NPs) were successfully fabricated using two-step electrochemical anodization. An ultrasound-assisted deposition method was used to homogeneously loading the NiO NPs into the TNTAs, resulting in a NiO/TNTAs junction electrode. X-ray diffraction reveals tha...
Article
Full-text available
This article reports a new attempt for the bandgap formation of cadmium sulfide nanocrystals (CdS NCs) synthesized on Si(1 1 1) substrates at low temperatures: 50 and 150 °C. The influence of energy gap alteration on the optoelectronic properties was extensively considered with the aid of various tools. A wurtzite-–hexagonal structure in both CdS/S...
Article
The morphologies of different ZnO nanostructures (ZNSs) films (deposited on glass substrates) are investigated using simple and low-cost techniques. Two synthesis techniques, i.e., direct hydrothermal technique and a combination of pulsed-laser ablation under liquid and hydrothermal (PLAL-H) technique, are employed. The first technique (direct hydr...
Article
Full-text available
Pure spherical-like SnO 2 and agglomerated spherical SnO 2 /TiO 2 nanostructures (NS) films were effectively synthesized via hydrothermal route and modest combination of pulse laser ablation besides hydrothermal (PLAL-H) methods, respectively. The as-prepared samples were deposited on glass substrates at growth temperature 100 °C and characterized...
Article
This study describes the hydrothermal synthesis of cupric oxide nanoparticles (CuO NPs) using Mint extract agent. A mixture of 0.1 M copper nitrate and a mint extract was hydrothermally treated at a temperature of 180 °C for two hours. Meanwhile, the Mint leaf extract had reduced the copper ions of the nanoparticles after five minutes, resulting in...
Article
Full-text available
This article demonstrates the effect of substrate temperature on the pulsed-laser deposition of cadmium sulfide nanoparticles (CdS NPs). Synthesis of CdS NPs on silicon substrates was realized at a temperature range of 150–550 �C. The XRD patterns confirm that CdS NPs showed a wurtzite-hexagonal phase with crystallite size changes between 15 and 24...
Article
The nondestructive detection and evaluation of crystallographic properties of nanocrystals is of great significance for both fundamental physics research and further development of high-performance functional devices employing nanostructured materials. Synchrotron radiation-based CXD using a nanoscale x-ray beam is shown to be a powerful tool to ex...
Thesis
In dieser Arbeit wird das epitaktische Wachstum von GaP/Si Heterostrukturen zur Herstellung von rauscharmen GaP/Si Nanodiodenarrays untersucht, wobei eine top-down Ätztechnik zur Herstellung der verwendeten Nanodiodenarrays genutzt wurde. Zur Untersuchung der gewachsenen Schichten wurden Röntgenstreuung (XRD), Rasterelektronenmikroskopie sowie die...
Article
The effect of post-growth annealing of epitaxial gallium phosphide grown on silicon substrates using gas-source molecular-beam epitaxy is described. The epitaxial layers were grown at substrate temperatures ranging from 250 to 550 °C. After optimizing the growth temperature, the prepared films were thermally annealed. Two thermal annealing methods...
Article
The growth of Al0.85Ga0.15P on GaP using gas-source molecular-beam epitaxy is investigated using in-situ high-energy electron diffraction, high-resolution x-ray diffraction, atomic-force microscopy, and scanning electron microscopy. Growth temperature and phosphorus flux were varied. The AlGaP films were grow on a GaP buffer layer and capped with G...
Conference Paper
Gallium phosphide (GaP) layers epitaxially grown on p-type Si (100) using gas-source molecular-beam epitaxy were investigated using low-frequency noise (LFN). The films were grown at temperatures (Tg) of 250 and 400 ºC. Two of them were thermally annealed at 480 ºC for 90 min. The GaP/Si heterostructures were characterized using scanning-electron m...
Conference Paper
Gallium phosphide layers were grown using gas-source molecular-beam epitaxy on p-type silicon substrates of orientation (100). The growth temperature was varied between 250 and 550 �C. Samples grown at 250 and 400 �C were thermally annealed at 500 and 480 �C for 10 and 90 min, respectively. (Subsequent contact alloying was carried out at much lower...
Conference Paper
Gallium phosphide (GaP) was grown epitaxially on silicon (100) substrates using gas-source molecular-beam epitaxy. In this study, two growth methods are compared: one-step and two-step growth. In the case of one-step growth, the GaP was grown directly onto the desorbed Si surface at a single substrate temperature between 250oC to 550 oC, followed b...
Article
The relationship between response speed of a silicon n-well/p substrate photodiode and the depletion layer width has been investigated. Variation of both the junction capacitance and the series resistance of the photodiode with the depletion layer width have been analyzed. It is shown that the contribution of the time constant and the drift time in...

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Projects

Projects (5)
Project
Enhancment of Photocatyltic Activity of Hydrothermal synthesis of NiO/CdS Nanoheterojunction for Water treatment
Project
Renewable energy