E. Acurio

E. Acurio
Escuela Politécnica Nacional | EPN · Departamento de Física

Doctor of Philosophy student

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17
Publications
3,657
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74
Citations

Publications

Publications (17)
Article
This experimental study focuses on the positive bias temperature instability (PBTI) in a fully recessed-gate AlGaN/GaN MOS-HEMT. A positive stress voltage to the gate results in positive threshold voltage shift (ΔVth), which is attributed to the trapping of electrons from the GaN layer into the pre-existing oxide traps. The trapping rate exhibits a...
Article
Este trabajo tiene como objetivo estudiar la degradación de los diodos de barrera Schottky (SBD) con una terminación de borde cerrado (GET) bajo condiciones de estrés en estado de encendido en tecnologías de 200V y 650V. Después de todos los experimentos de estrés, se observa un comportamiento recuperable, que indica el atrapamiento de cargas en de...
Conference Paper
Full-text available
This work presents the control design of a domestic refrigeration system by using a variable speed compressor (inverter technology) with the main purpose of reducing energy consumption and complying with Ecuadorian standards for this type of household appliances. A study on refrigeration systems is carried out, its operating principles are discusse...
Article
Full-text available
This work focuses on the positive bias temperature instability of SiC-based MOSFETs under different stress voltages and temperatures. Stress experiments demonstrate that the threshold voltage shift (∆Vth) does not follow a conventional power law for long stress time, but exhibits a saturating log- time dependence attributed to the charge trapping i...
Conference Paper
This work focuses on the positive bias temperature instability of SiC-based MOSFETs under different stress voltages and temperatures. Stress experiments demonstrate that the threshold voltage shift (∆Vth)does not follow a conventional power law for long stress time, but exhibits a saturating log-time dependence attributed to the charge trapping in...
Article
This article aims to study the degradation of Schottky Barrier Diodes (SBDs) with a Gated Edge Termination (GET) under ON-state stress conditions. After all the stress experiments a recoverable behavior is observed, which indicates charge trapping in pre-existing defects and no creation of new traps. A broad statistical analysis demonstrates better...
Article
This paper analyses the influence of the GaN and Si₃N₄ passivation (or "cap") layer on the top of the AlGaN barrier layer on the performance and reliability of Schottky barrier diodes with a gated edge termination (GET-SBDs). Both GaN cap and Si₃N₄ cap devices show similar dc characteristics but a higher density of traps at the SiO₂/GaN interface o...
Conference Paper
This paper presents the full-custom design of a 45 nm microprocessor using the electronic design automation (EDA) software, Microwind. The design consists of fundamental modules: the arithmetic logic unit (ALU), memory, counter and an integrated Bluetooth (BT) port working at the 2.4 GHz. This design is validated by simulation under a process, volt...
Article
This paper focuses on the time-dependent breakdown of the AlGaN/GaN Schottky barrier diodes with a gated edge termination (GET) submitted to high-voltage stress. The impact of the GET structure, the passivation layer thickness, and a preclean process (sulfuric acid and hydrogen peroxide mixture + ammonia and hydrogen peroxide mixture) before the GE...
Article
This work compares the performance and the reliability of recessed-gate AlGaN/GaN MOS-HEMTs with two different gate dielectrics: a single layer of Al2O3 and a bilayer of AlN/Al2O3. Although the normally-OFF operation is well observed in the AlN/Al2O3 device, the other characteristics are remarkable poor and directly prejudice the performance of the...
Article
Full-text available
The interest in studying the different techniques of control and its real-time responses has made of the system of inverted pendulum a classic control problem. This system is highly nonlinear, with multiple inputs and a single output and belongs to a special class of mechanical systems called underactuated, in which there are fewer control inputs t...

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