D.Nirmal Ph.D

D.Nirmal Ph.D
Karunya University | KITS · Department of Electronics & Communication Engineering

M.E.,Ph.D.,SMIEEE.,LMIETE.,MISTE.,

About

156
Publications
40,339
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Introduction
D.Nirmal Ph.D currently works at the Department of Electronics & Communication Engineering, Karunya Intitute of Technology and sciences . D.Nirmal does research in Communication Engineering, Optical Engineering and Electronic Engineering. Their current project is 'Modeling and Simulation Based Investigation of Field-Effect Transistors for Sensor Application.'
Additional affiliations
July 2013 - present
Karunya University
Position
  • Professor (Associate)
July 2013 - present
Karunya University
Position
  • Professor (Associate)
June 2009 - June 2013
Karunya University
Position
  • Professor (Assistant)
Education
June 2001 - June 2005
Anna University, Chennai
Field of study
  • Electrical and Electronics

Publications

Publications (156)
Article
In order to handle high power with good thermal stability at RF & microwave frequencies wider bandgap semiconductor based transistors are highly desirable and GaN & AlGaN channel HEMTs (High electron mobility transistors) have become most promising devices for RF power and switching electronic applications due to their unique features such as high...
Article
The DC and RF capability of GaN high electron mobility transistor (HEMT) was enhanced by incoorporating BGaN back barrier (BB). Different types of back barriers like AlGaN, BGaN, AlN, AlInN, InGaN and p-diamond was used and the small and large signal RF characteristics were simulated and compared at gate length of 0.8 µm. The AlGaN/GaN HEMT with BG...
Article
Full-text available
During the outbreak of the COVID-19 illness, mRNA (messenger RNA) injections proved to be effective vaccination. Among the presently available analytical techniques, UV/VIS spectrophotometry is a trustworthy and practical instrument that may provide information on the chemical components of the vaccine at the molecular level. In this paper, we will...
Article
Objective Reflectance Spectroscopy is a helpful device to evaluate the seriousness of hyperpigmentation and erythema in Local scleroderma lesions. This article highlight the design of one dimensional regular grating comprised of TiO2 for the detection of skin lesions in localized scleroderma. The grating structure establishes the wavelength-depende...
Article
Full-text available
The influence of double deck T-gate on LG = 0.2 μm AlN/GaN/AlGaN HEMT is analysed in this paper. The T-gate supported with Silicon Nitride provides a tremendous mechanical reliability. It drops off the crest electric-field at gate edges and postponing the breakdown voltage of a device. A 0.2-μm double deck T-gate HEMT on Silicon Carbide substrate o...
Article
Full-text available
In this paper, the use of hetero-dielectric in quadruple gate Tunnel Field Effect Transistor (QG-TFET) is proposed to simultaneously improve the ON current and the ON-OFF ratio. The analytical models for the surface potential and the electric field for the QG-TFET are obtained by solving 2D-Poisson equations with appropriate boundary conditions. Th...
Article
A new airborne transmittable disease, coronavirus (COVID-19), was discovered by China in late December 2019. The virus is spread by direct contact with infected people's respiratory droplets (from coughing and sneezing) and virus-infected surfaces. COVID-19 can survive for hours on surfaces, but disinfectants can kill it. Pathogens have evolved and...
Conference Paper
Full-text available
There are various types of semiconductor materials such as Germanium (Ge), Silicon (S), Gallium Arsenide (GaAs), Silicon Carbide (SiC), Gallium Nitride (GaN) and Gallium Phosphide (GaP). In recent years, the GaN has gained a popularity amongst the other semiconductor materials, which is widely used in the fabrication of advanced electronic and powe...
Article
Full-text available
In this article, we report the RF/DC performance of 250 nm gate length AlGaN/GaN High Electron Mobility Transistor (HEMT) on a Silicon wafer. The GaN HEMT on Si wafer is designed and simulated using the Synopsys TCAD tool. A comprehensive analysis of the impact of field plate lengths on the RF/DC performance of 250 nm gate AlGaN/GaN HEMT on Si wafe...
Article
Full-text available
This work presents a low-power 10-bit 40 MSPS Pipelined ADC with 1.8V supply voltage in a 180nm silicon-based CMOS process. Simultaneous capacitor sharing and op-amp sharing technique is used between two successive stages of a Sample-and-Hold Amplifier (SHA) to reduce the power consumption. The memory effect in the proposed ADC is eliminated by a l...
Article
This article critically reviews the architectural novelties, emerging materials (substrate, buffer, barrier & contact materials), technological advancements, processing techniques adopted, geometrical influences & challenges during fabrication, and driving reliability aspects of AlGaN/GaN high electron mobility transistors (AG-HEMTs) that are gaini...
Article
Full-text available
In this article, the analog/RF performance of n-channel vertically stacked gate all around (GAA) silicon nanosheet field effect transistors (Si-NSFETs) are investigated using 3-D TCAD simulations. The influence of gate length (LG) scaling, nanosheet width (WNS) and spacing between the nanosheets on the analog/RF performance of vertically stacked GA...
Article
Full-text available
The impact of mini-field plated tapered T-Gate and conventional gate on LG = 50 nm AlGaN/GaN on - Silicon High Electron Mobility Transistor (HEMT) is analyzed and its DC/RF performance is reported in this work. The AlGaN/GaN HEMT supported with mini-filed plated tapered T- gate structure provides a maximum drain current of 1.53 A/mm when compared t...
Article
Full-text available
This paper presents the effect of quantum confinement on the potential of short channel mono-layer molybdenum disulfide (MoS2) based transistor using Ritz Galerkin finite element technique. Unlike earlier models, only two iterations are used to obtain the potential. This model makes use of the coupled Poisson-Schrödinger equation by considering qua...
Article
Full-text available
This work investigates the multiple quantum well ultraviolet light emitting diode (LED) with AlGaN/BGaN/AlGaN active stack layers. The thickness and the boron concentration of BGaN quantum well are fixed as 3 nm and 10% respectively. The performance of this BGaN based UV LED is analyzed and benchmarked with GaN well LED. In the simulation, various...
Article
Full-text available
This research article reports the operational characteristics of gate field plate double heterojunction (DH) high electron mobility transistors (HEMTs) using SiN (SiO2) passivation techniques. The proposed HEMT exhibits 496 (292) V breakdown voltage (VBR) for LG (gate-length) = 0.25 μm, LGD (drain-gate distance) = 3.2 μm and 1 μm field plate length...
Article
The efficiency and switching performance of a LG = 0.25 μm GaN-HEMT with an aluminium gallium nitride back barrier (BB) and discrete field plate is examined in this article. The discrete-field plate minimizes the gate capacitance, such as drain gate capacitance and source gate capacitance, owing to its minimal FP area. Moreover, the AlGaN BB suppre...
Article
Sensing COVID-19, GOx (glucose oxidase enzyme) in exhaled breath condensate/saliva, bio-molecules like KIM (Kidney Injury Molecule) in human body and pH value in human body fluids have gained huge attention in the present scenario as well as in the past decade. Hence, for the first time, double channel technique in AlGaN/GaN High Electron Mobility...
Article
In this paper, the investigation of dual metal double gate (DMG) hetero-dielectric TFET with drain-gate underlap for nanoscale digital applications is analyzed. Drain-gate underlap TFET is used to achieve lower ambipolar current (Iambi) and low leakage current (Ioff) than a conventional hetero-dielectric TFET. The performance analysis has been done...
Article
A Virtual Gate model with surface traps at gate edge of drain side is modelled for AlGaN/GaN High Electron Mobility Transistor (HEMT). This model confirms the utility of a Field Plate (FP) enhances sheet carrier density and suppress current collapse. At the gate-edge of drain side, the channel electron density with Field Plate are 2.1 × 10⁹ cm⁻³, 4....
Article
This work describes the self-heating effects on the behavior of AlGaN/GaN-based high-electron Mobility Transistors (HEMTs), which are grownon Sapphire substrate, using electro-thermal TCAD simulations. The proposed device, passivated with AlN/SiN, demonstrates more excellent thermal performance than the conventional one with SiN passivation due to...
Article
Full-text available
In this paper, AlGaN/GaN High Electron Mobility Transistor (HEMT) with stacked passivation (Diamond/SiN) is proposed and investigated. The implementation of stacked passivation in HEMT has been shown to be effective in suppressing self-heating effect. Under the gate-terminal, the peak channel temperature of HEMT with stacked passivation is 384 K, w...
Article
Hydrogen (H2) has been widely used in H2 fuelled vehicles, semiconductor fabrication, medical treatments, chemical industry and industrial aerospace applications. However, H2 is a highly explosive gas (if H2 concentration exceeds 4.65 vol% in air) and therefore, the risk is very high when it is used in applications. This increases the demand for th...
Preprint
Full-text available
The influence of double deck T-gate on L G =0.2 μm AlN/GaN/AlGaN HEMT is analysed in this paper. The T-gate supported with Silicon Nitride provides a tremendous mechanical reliability. It drops off the crest electric-field at gate edges and postponing the breakdown voltage of a device. A 0.2-μm double deck T-gate HEMT on Silicon Carbide substrate o...
Article
This article critically reviews the materials, processing and reliability of InP high electron mobility transistors (InP HEMTs) for future terahertz wave applications. The factors such as drain current (ID) over 1200 mA/mm, transconductance (gm) over 3000 mS/mm, cut off frequency (fT) over 700 GHz and maximum oscillation frequency (fmax) over 1300...
Article
Incessant downscaling of feature size of multi-gate devices such as FinFETs and gate-all-around (GAA) nanowire (NW)-FETs leads to unadorned effects like short channel effects (SCEs) and self-heating effects (SHEs) which limits their performance and causes reliability issues. FinFET technology has resulted in a remarkable performance up to a feature...
Article
The dc and high frequency performances of Al composition Graded Channel AlGaN/GaN high electron mobility transistor on GaN substrate was investigated and compared with Conventional AlGaN/GaN HEMT. The high frequency characteristics were measured on both the AlGaN/GaN HEMTs scaling the gate length from 800 nm to 50 nm. The 50 nm gate length Graded C...
Article
Full-text available
The performance comparison and the temperature profile of AlGaN/GaN HEMT on different substrates are investigated. It results the maximum drain-source current (IDS) of 1.08 A/mm, 1.04 A/mm, 0.81 A/mm and 0.669 A/mm for AlGaN/GaN HEMT on Diamond, Sapphire, Silicon Carbide and Silicon substrates respectively. In addition, it contributes the breakdown...
Preprint
This work presents a low power 10-bit 40 MSPS Pipelined ADC with 1.8V supply voltage in a 180nm silicon based CMOS process. Simultaneous capacitor sharing and op-amp sharing technique is used between two successive stages of a Sample-and Hold Ampifier (SHA) to reduce the power consumption.The memory effect in the proposed ADC is eliminated by a low...
Article
The ambipolar conduction which is one of the serious obstacles in the development of the graphene nanoribbon field-effect transistors (GNR-FETs) has been successfully controlled by the electrostatic modulation of the energy bands in this work. With targeted redistribution of the doping profile on the graphene surface inside the channel region near...
Article
Full-text available
AlGaN/GaN-HEMT with Single to Multi-step gate field plate is proposed in this work. The proposed device enhanced Drain current, breakdown voltage and shift in threshold voltage. The performance of proposed device is analyzed and compared with experimental step device with and without Field Plate (FP). Reduction of current collapse effects is proved...
Article
Full-text available
Currently, the GaN-on-silicon high electron mobility transistor (HEMT) is a promising candidate to replace the Si Metal Oxide Semiconductor Field Effect Transistor (MOSFET) for high power electronics circuits. However, self-heating is still a challenging issue to be addressed, especially for high-current applications. In this paper, a GaN-on-Si HEM...
Preprint
Full-text available
We present the stable transconductance operation of InGaN/GaN composite channel based HEMTs. L G = 55 nm AlGaN/InGaN/GaN (Device A) and InAlN/InGaN/GaN (Device B) HEMTs were proposed and investigated its operational characteristics using numerical simulation. Existence of deeper potential well, the proposed HEMTs possesses high 2DEG (two-dimensiona...
Chapter
The semiconductor industry is always looking for technology clarification that helps in fabrication of devices to be used in integrated circuits with improved performance per cost and demand for reduced energy consumption. The pace was maintained by exponentially scaling down device dimensions, introducing new materials or geometries to improve CMO...
Article
Full-text available
A drain current model for an AlGaN/GaN high-electron-mobility transistor (HEMT) with variable thermal resistance is developed. For the first time, a variable thermal resistance in terms of the substrate thickness \((t_{\text{SiC}} )\) is included rather than a constant thermal resistance. One of the distinguishing features of this model is that it...
Article
Full-text available
The impact of trapping on the optical properties of Gallium Nitride (GaN) Light Emitting Diodes (LED) has been analyzed in this work. The analysis is carried out by using Technology Computer Aided Design (TCAD) physical simulator. GaN LED with four quantum Wells have been considered with donor trap density ranging from 5 × 10¹⁵ cm⁻³ to 1 × 10¹⁹ cm⁻...
Article
This paper examined the innovations of the spectrometers for the measurement of consistency based parameters of the handheld Micro Electronic Mechanical System (MEMS) Spectrometer. Fast, highly sensitive, miniature spectroscopy techniques empowered quick, savvy and effective measures for various applications. In the light spectroscopy-based identif...
Patent
A composition for preparing composite material for carbon electrode supercapacitor from waste paper cup and the method involved thereof relates to synthesis of carbon (P-carbon) from the waste paper cups. Fluorescein molecules were immobilized on this carbon surface. The composite P-carbon/ Fluorescein were used for fabricating the supercapacitor e...
Chapter
The III-V compound semiconductor-based quantum-well field-effect transistor (QWFET) is one of the most promising solid-state transistor technologies for future high-speed, low-power logic integrated circuit applications due to their high speed and low-voltage operation. This excellent speed and low voltage operation mainly comes from the unique pro...
Article
Full-text available
A Dual Material Double Gate Tunnel Field Effect Transistor (DMDGTFET) with reduced high-K dielectric length (LK = 15 nm) and drain electrode thickness (6 nm) is proposed and performed a TCAD simulation. The simulation result of proposed device exhibits suppression in gate-to-drain capacitance (CGD). The (CGD) is proportional to dielectric constant...
Article
Full-text available
This paper proposes a 2-D analytical model developed for Double Gate Junctionless Transistor with a SiO2/HfO2 stacked oxide structure. The model is solved by Poisson’s equation using the variable separation method. The proposed model gives analytical expressions for electrostatic potential distribution, threshold voltage and drain current with the...
Article
Full-text available
This paper presents the design and simulation of Silicon Carbide (SiC) based technology, Indium Gallium Nitride (InGaN) Multiple Quantum Well (MQW) Light-Emitting Diode (LED) with a Compositionally Step Graded (CSG) InGaN barrier and V-Shaped well in the active region. The simulations are obtained in Silvaco Computer Aided Design simulator and para...
Patent
A Triboelectric Nano Generator (TENG) device which convert the human applied force to electric energy. The invention mainly focus on bio-materials as carbon electrode and paper from pine tree as tribo-electric material are used in the preparation of nanogenerator device. This can replace electronic devices from non-degradable plastic e-waste to deg...
Conference Paper
Full-text available
For the first time, AlGaN/GaN HEMT is demonstrated for bio-sensing application using transconductance analysis. A lot of HEMT based biosensors were developed experimentally but very few reported on sensing applications. These devices are ideal for sensing or tracking biomolecule because of the spontaneous and piezoelectric polarization properties....
Article
Full-text available
There is an advent need in health industry, for an Implantable Medical Device (IMD) withlower power consumption, noise and area as much as possible, which aims at extending the life-span of the device by enhancing the performance of battery to avoid additional surgery and does not affect the tissue cells. The existing IMD detects a single disorder...
Article
Full-text available
In this article, threading dislocations and its impact on the electrical and thermal performance of GaN‐on‐Diamond (Dia), ‐SiC, and ‐Si high electron mobility transistor (HEMT) has been investigated. TCAD simulation of GaN‐HEMT is performed with various buffer traps to mimic the lattice mismatch/dislocation density at GaN/Si, GaN/SiC, and GaN/Dia i...
Patent
The invention relates to the field of Very Large Scale Integrated Circuits involving high density of MOSFET in a package without compromising the performance of the MOSFET. More particularly, the scalability of the IC package is increased by the 5 reduction in channel length by reducing the short channel effect(SCE) in the MOSFET.
Article
Full-text available
In this work, the effectiveness of various dielectric passivation materials such as SiO2, Si3N4, Al2O3 and Si3N4/Al2O3 on the DC & RF behaviour of InP-HEMT (High Electron Mobility Transistor) was analyzed using TCAD (Sentaurus) tool. The InP HEMT structure used in this work features a novel T-Gate structure with Pt sinking technology to alleviate s...
Article
Solar cells are emerging as serious contenders to rival leading energy sources to generate electricity for environment friendly renewable and sustainable energy technologies. Earth is receiving an incredible amount of solar energy which can be converted into electricity by means of high-performance solar cells for meeting the future global energy n...
Article
The unique material properties of GaN, wide bandgap, high thermal conductivity, high breakdown voltage, high electron mobility and the device properties of GaN HEMT (High Electron Mobility Transistor) namely low parasitic capacitance, low turn on resistance and high cut off frequencies make it a good choice to use in a power amplifier. During this...
Article
Full-text available
The performance of AlGaN/GaN HEMT is enhanced by using discrete field plate (DFP) and AlGaN blocking layer. The AlGaN blocking layer provides an excellent confinement of electrons toward the GaN channel, resulting very low subthreshold drain current of 10−8 A/mm. It reveals very high off state breakdown voltage (BV) of 342 V for 250 nm gate technol...
Conference Paper
Model of self-heating for AlGaN/GaN High Electron Mobility Transistor (HEMT) is proposed. In the model, degradation of thermal conductivity effect is included. Model data of the device is obtained using MATLAB. Physical simulation of GaN-HEMT is carried out using Technology Computer Aided Design (TCAD). The model data is compared with the simulatio...
Conference Paper
AlGaN/GaN HEMT with AlN passivation is proposed and investigated. Effectiveness of AlN passivation is analyzed and compared with SiN, SiO2, Al2O3, and HfO2 passivation materials. The performance of these passivation materials are analyzed using Technological Computer Aided Design (TCAD) simulation. The potential, polarization charge, energy band di...
Article
Harvesting mechanical energy into electrical energy is initially derived through Zinc Oxide (ZnO) and Gallium Nitride (GaN) nanorods by its piezoelectric nature. This paper reports on the fabricated Zinc phthalocyanine (ZnPc) nanorods on flexible Aluminum foil (Al) based nanogenerators for the first time. Aluminum foil (Al) acts as a bottom electro...
Article
The influence of gate overlap and underlap on the DC/RF behavior of a composite channel based double gate MOSFET (DG MOSFET) that can be used for RF/analog applications is investigated using the 2D Sentaurus TCAD tool in this work. An InAs-inserted In07Ga0.3As composite channel, double silicon delta doping technology, n⁺-In0.53Ga0.47As source and d...
Article
https://www.sciencedirect.com/science/article/pii/S2589208819300201 In this paper, we proposed a 2 dimensional model of tripple material double gate Tunnel Field Effect Transistor (TM-DG TFET) with hetero-junction formed by germanium and silicon materials in the source-channel junction and heterodielectric gate stack is used with Silicon Dioxide (...
Article
This paper reviews the rapid progress being made in the developments of organic/inorganic blue light emitting diodes (LEDs). Blue LEDs exhibits outstanding electrical and optical properties such as low forward driving voltage, high light output power, high brightness and high internal quantum efficiency (IQE). This article highlights the rapid adva...
Article
Much research efforts have been undertaken with the aim to develop a transparent flexible energy storage device to utilize materials that are mechanically deformable, light in weight and worn on human body with ease using Graphene Oxide (GO) and Magnesium Oxide (MgO) materials. The structure of the device, the manufacturing procedure, and its perfo...
Article
Following the introduction of metamorphic high electron mobility transistors (MHEMTs) 30 years back, there has been a rapid growth in their use in advanced MMIC (monolithic microwave integrated circuit) and TMIC (Terahertz monolithic integrated circuit) applications in sub-millimetre wave (S-MMW) and terahertz (THz) frequency regime. Undoubtedly, t...