
Deming ZhangBeihang University | BUAA · School of Microelectronics
Deming Zhang
Doctor of Philosophy
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71
Publications
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Introduction
My research interests include spintronics device modeling, MRAM circuit design, hybrid CMOS/spintronics integrated circuits design, MRAM circuit design, and neuromorphic computing with the emerging non-volatile memory devices.
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Publications
Publications (71)
A Probabilistic Bit (P-Bit) device serves as the core hardware for implementing Ising computation. However, the severe intrinsic variations of stochastic P-Bit devices hinder the large-scale expansion of the P-Bit array, significantly limiting the practical usage of Ising computation. In this work, a behavioral model which attributes P-Bit variatio...
Probabilistic Bit (P-Bit) device serves as the core hardware for implementing Ising computation. However, the severe intrinsic variations of stochastic P-Bit devices hinder the large-scale expansion of the P-Bit array, significantly limiting the practical usage of Ising computation. In this work, a behavioral model which attributes P-Bit variations...
In this work, the degradation behaviors for large size amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) under realistic waveforms in active driving circuit are revealed, and the corresponding degradation mechanisms are analyzed. When the back half of the drain pulse overlaps with the first half of the gate pulse (forward overlap), self-heati...
The generation of the minimum values (the first two minima and the index of the minimum) of numerous variable-to-check messages (V2CM) is the major bottleneck in efficient min-sum decoding of low-density parity-check (LDPC) codes. This brief proposed a novel search-based compute-in-memory (CIM) based minimum values generation (MVG) scheme with two...
Magnetic Random Access Memory (MRAM) has enormous application potential in the aerospace field due to its nonvolatile, high speed, low power, and inherent radiation resistance characteristics. Due to its high sensing reliability, pre-charge differential sense amplifier (PCDSA) has been proposed and widely used in MRAM products. However, such PCDSA...
This paper presents a novel compute-in-memory (CIM) macro, which mainly consists of three modules: input generator, 9T1C-SRAM CIM array and charge-integration-count output (CICO) circuit. For the input generator, it can achieve the pulse-width modulation mapping scheme without counts, leading to a small area overhead. For the CIM array, one row-cas...
A charge-domain compute-in-memory (CIM) macro is proposed to implement bit-scalable multiply-and-accumulate (MAC) operation with the cell-embedded digital-to-analog (DA) conversion and two-stage analog-to-digital (AD) conversion. The cell-embedded DA conversion is achieved among the capacitances inside the proposed 12T2C SRAM CIM cell, enabling 1-4...
A magnetic tunneling junction (MTJ) with very low energy barrier, which shows controllable stochastic property, is recently proposed to constitute the probability bit (P-Bit). With the P-Bit, Ising computation, which is a general and powerful computing platform for both conventional and non-conventional problems, is implemented. However, such hardw...
This brief presents a parallel magnetoresistive random access memory (MRAM)-based strong physical unclonable function (MPUF). The proposed MPUF leverages fabrication-induced process variations of magnetic tunnel junction (MTJ) and compares the resistance of MRAM cells to obtain a 1-bit response value. Contrary to arbiter PUF, the proposed MPUF achi...
Mobility enhancement is an important research topic for amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) since it is directly related to the device’s performance. The double-layer a-IGZO channel with quantum well structure was proposed for mobility enhancement. However, the impact of such double layers with the quantum well structure on a-IGZO...
Neuromorphic computing systems have drawn extensive attention due to their massive parallelism, the combination of storage and computation, high energy efficiency, and inherent tolerance to fault and variation. Spintronic devices, which exploit both the charge and spin properties of electrons for information processing and storage, are considered a...
Ising computer is a powerful computation scheme to deal with NP-hard optimization problems that cannot be efficiently addressed by conventional computers. A robust probabilistic bit (P-Bit) which is realized by a hardware entity fluctuating in time between -1 and 1 plays a key role in the success of Ising computer. Spintronics technology, such as s...
In the conventional computing systems, high redundancy in terms of energy consumption, speed and area are usually applied to guarantee accurate operations. However, energy consumption has become a bottleneck for further scaling down of silicon-based devices, which can no longer be increased to ensure accuracy. In order to find a balance between acc...
Content addressable memories (CAMs) are a promising category of computing-in-memory (CiM) elements that can perform highly parallel and efficient search operations for routers, pattern matching, and other data-intensive applications. Various magnetic tunnel junction (MTJ)-based CAM designs have been proposed to realize zero standby power and high-p...
True Random Number Generator(TRNG) is the key component for stochastic computation. It can also act as the Probabilistic Bit(P-Bit) which is the core device for Ising Computer. In previous study, we have proposed a novel programmable TRNG based on Spin Torque Nano-Oscillator(STNO). With this TRNG constructed with STNO, a time division multiplexing...
This article presents an overview of the recent developments in the magnetic random access memory (MRAM) for approximate computing. The key technique of approximate computing is to trade off limited accuracy for improvements in other metrics, such as speed, power, and area. With intrinsic current-induced threshold operation and random process varia...
Physical unclonable function (PUF) is an emerging hardware security primitive which is increasingly used to authenticate and identify Internet of Things (IoT) devices. Spin-transfer torque magnetoresistive random access memory (STT-MRAM) provides new opportunities for novel PUFs due to inherent randomness sources, such as process variations, stocha...
Recently, SnSe has been found to possess a remarkable thermoelectric performance. As an isostructural compound to SnSe, SnS contains a more environmentally compatible and earth abundant element, which enables SnS a promising thermoelectric material for commercial application. In this work, we have performed systematic studies of the crystal structu...
With the rapid development of the Internet of Things (IoT) infrastructure, electronic devices are becoming ubiquitous, in which authentication and secure communication are required. As a result, novel hardware security primitives have been developed to overcome the deficiencies of conventional security methods and address the growing security issue...
Continued scaling of Complementary Metal Oxide Semiconductor (CMOS) integrated circuit technology is slowing down due to physical limitations, while the static power of CMOS based memory is increasing as the transistors shrink. As an alternative memory technology, the Spin Transfer Torque Magnetic RAM (STT-MRAM) remains limited to low-level, high-c...
The pragmatic use of Spin Torque Nano-Oscillators (STNOs) in real electronic systems is severely hindered due to their low output power and poor noise figure. The most accepted and promising way to increase the output power and decrease the signal noise of STNOs is through their mutual synchronization. However, it is confused that the mutual synchr...
The noise of a spin torque oscillator (STO) is 4–6 orders higher than that of a traditional CMOS Voltage Controlled Oscillator (VCO). This is the biggest obstacle hindering the STO to replace the VCO in pragmatic usage since a high quality RF signal is essential to the modern telecommunication system. The phase-locked loop (PLL) is widely used in R...
Spin Torque Nano-Oscillator (STNO) is a very promising candidate for the next generation telecommunication system since its small size ∼ 100 nm and high output frequency range. However, it still suffers low output power usually smaller than μW and very high phase noise. Besides, the modulation method for STNO should be further developed. The freque...
This article proposes two different magnetic nonvolatile-static random access memory (MNV-SRAM) cell circuits for low-power, high-speed, and high-reliable backup operation with a compact cell area. They employ perpendicular magnetic tunnel junctions (p-MTJs) as nonvolatile backup storage elements and explore the spin-orbit torque (SOT) with the ass...
Recently, experimental results have demonstrated that perpendicular magnetic tunnel junction (p-MTJ) with the antiferromagnetic(AFM)/ferromagnetic (FM)/oxide structure can achieve field-free spin-orbit torque (SOT) switching since the AFM metal strip can not only generate the SOT, but also provide an exchange bias (HEX), making it suitable for prac...
Recently, various magnetic non-volatile ternary content-addressable memory (MNV-TCAM) cells that use magnetic tunnel junctions (MTJs) as storage units have been proposed to realize zero standby power. However, they still suffer from low reliability and high power consumption for search operation. In addition, the restrictions on the ordering of the...
The oscillating frequency of typical Spin Torque Nano Oscillators (STNOs) can be modulated by injected DC current or bias magnetic field. And phase locking of STNOs to an external Radio Frequency (RF) signal can be imposed by AC current or RF bias magnetic field. However, in this study, we have proposed a Voltage Controlled Spin Oscillators (VCSOs)...
Although spin transfer torque (STT)-based magnetic tunneling junction (MTJ) owns advantages of nonvolatility, nonlimited endurance, and fast write/read, its demand for high current density significantly casts a shadow over its future prospects. Recently, a novel three-terminal MTJ cell that combines voltage-controlled magnetic anisotropy (VCMA) eff...
Novel skyrmion-magnetic tunnel junction (SK-MTJ) devices were investigated for the first time to implement the ternary neural networks (TNN). In the SK-MTJ, an extra magnetoresistance state beyond binary parallel and anti-parallel MTJ states was achieved by forming a skyrmion vortex structure in the free layer. Based on the SK-MTJ, we propose a syn...
In this paper, we explore the possibility of hardware acceleration implementation of sparse coding algorithm with spintronic devices by a series of design optimizations across the architecture, circuit and device. Firstly, a domain wall motion (DWM) based compound spintronic device (CSD) is engineered and modelled, which is envisioned to achieve mu...
Since Internet of Things (IoT) devices should ideally be self-powered, there is great demand for devices with ultra-low operating voltages that can run on energy harvested from a noisy environment. In this work, a novel all spin logic (ASL) device with voltage controlled magnetic anisotropy (VCMA) effect amplified by negative capacitance (NC) is pr...
The high current density required by magnetic tunneling junction (MTJ) switching driven by the spin transfer torque (STT) effect leads to large power consumption and severe reliability issues, hindering the timetable for STT magnetic random access memory to mass market. By utilizing the voltage-controlled magnetic anisotropy (VCMA) effect, the MTJ...
Emerging, fast-speed, high-capacity and low-power non-volatile memories (NVMs) are becoming crucial enablers of current information communication technologies. However, they all suffer from intrinsic limitations, which restrict the range of their applications. Here, we report a nanoscale logic-in-memory device that combines the advantages of Magnet...
The making use of 2-D material as transistor channel is a rapid growth field since it can provide enough gate controllability for transistors at scaling limit. Among all kinds of 2-D materials, monolayer MoS
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stands out because of its large intrins...
The high current density required by Magnetic Tunneling Junction (MTJ) switching driven by Spin Transfer Torque (STT) effect leads to large power consumption and severe reliability issues therefore hinder the timetable for STT Magnetic Random Access Memory (STT-MRAM) to mass market. By utilizing Voltage Controlled Magnetic Anisotropy (VCMA) effect,...
In this work, we proposed all spin logic device with voltage controlled magnetic anisotropy (VCMA-ASL). Simulation results by spin circuit method reveal that both switching time and energy consumption can be improved. It is shown that by increasing oxide thickness and VCMA coefficient, ultra-low power ASL device can be achieved.
Benefiting from its simple switching scheme (only a bidirectional current source), high-speed and low-power spin-transfer torque (STT) has been regarded as one of the most promising switching mechanisms for a magnetic tunnel junction (MTJ)-based non-volatile memory and logic circuits. However, it suffers from a number of reliability issues like wri...
Spintronics devices such as magnetic tunnel junction (MTJ) have been investigated for the neuromorphic computation. However, there are still a number of challenges for hardware implementation of the bio-inspired computing, for instance how to use the binary MTJ to mimic the analog synapse. In this paper, a compound scheme is firstly proposed, which...
In this work, we have proposed that the neural synapses and neurons can be realized by utilizing spin waves (SWs) as information carrier. The SWs is excited by spin torque nano-oscillator (STNO), and detected with several different physical mechanisms: 1) tunneling magnetic-resistance 2) spin pumping and 3) inverse spin hall effect. The proposed SW...
Artificial synaptic devices implemented by emerging post-CMOS non-volatile memory technologies such as Resistive RAM (RRAM) have made great progress recently. However, it is still a big challenge to fabricate stable and controllable multilevel RRAM. Benefitting from the control of electron spin instead of electron charge, spintronic devices, e.g.,...
Recently, magnetic tunnel junction with in-plane magnetization (i-MTJ) has been exploited to behave as a binary stochastic synapse. However, it suffers from its limited level of synaptic weight, resulting in an inaccurate learning. In this work, a compound synapse that employs multiple perpendicular MTJs (p-MTJs) in series is proposed. It possesses...
Benefiting from its inherent hardness to radiation and non-volatility, magnetic random access memory (MRAM) is considered as one of the most promising non-volatile memory (NVM) technologies for aerospace and avionic electronics. However, MRAM is still sensitive to single event upsets (SEU) due to its CMOS employed peripheral circuit. In this paper,...