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  • Daniel A.L. Loch
Daniel A.L. Loch

Daniel A.L. Loch
  • PhD
  • Engineer at Trumpf Hüttinger GmbH + Co. KG

About

17
Publications
3,023
Reads
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198
Citations
Current institution
Trumpf Hüttinger GmbH + Co. KG
Current position
  • Engineer
Additional affiliations
September 2009 - April 2010
Fraunhofer Institute for Surface Engineering and Thin Films
Position
  • Research Assistant
Description
  • Working on thesis towards the degree of Dipl-Ing. (FH) on the subject of MPP process development and characterisation of Al2O3 films.
September 2012 - present
Sheffield Hallam University
Position
  • Research Associate
Education
July 2010 - July 2015
Sheffield Hallam University
Field of study
  • Plasma Science and Surface Engineering
September 2004 - July 2010
Jade University of Applied Sciences
Field of study
  • Mechatronics - Nanotechnology

Publications

Publications (17)
Conference Paper
CoCrMo alloy, although an acceptable choice for metal-on�metal prosthetic implants, requires enhancement of its mechanical and tribological properties. In this work, HIPIMS discharge was utilised to perform a low-pressure plasma nitriding (HLPN) process. XRD studies revealed the formation of a compound layer consisting of a desirable mixture of...
Article
Full-text available
Growth of polycrystalline CdMnTe ternary compound thin films has been carried out using cathodic electrodeposition technique at different cathodic potentials. The range of the cathodic potentials used in this work has been chosen according to the cyclic voltammogram results. The CdMnTe thin films were electroplated from electrolyte containing CdSO...
Article
Full-text available
Transition-metal nitrides have received significant interest for use within plasmonic and optoelectronic devices because of their tunability and environmental stability. However, the deposition temperature remains a significant barrier to widespread adoption through the integration of transition-metal nitrides as plasmonic materials within compleme...
Preprint
Full-text available
Transition metal nitrides have received significant interest for use within plasmonic and optoelectronic devices. However, deposition temperature remains a significant barrier to the integration of transition metal nitrides as plasmonic materials within CMOS fabrication processes. Binary, ternary and layered transition metal nitride thin films base...
Article
Full-text available
In recent years, high power impulse magnetron sputtering (HIPIMS) has caught the attention of users due to its ability to produce dense coatings. However, microscopic studies have shown that HIPIMS deposited coatings can suffer from some surface imperfections even though the overall number of defects can be significantly lower compared to, for exam...
Article
Full-text available
Inductively coupled impulse sputtering (ICIS) is a new development in the field of highly ionised pulsed PVD processes. For ICIS the plasma is generated by an internal inductive coil, replacing the need for a magnetron. To understand the plasma properties, measurements of the current and voltage waveforms at the cathode were conducted. The ion ener...
Article
Full-text available
Inductively coupled impulse sputtering is a promising new technique for highly ionised sputter deposition of materials. It combines pulsed RF-power ICP technology to generate plasma with pulsed high voltage DC bias on the cathode to eliminate the need for a magnetron. To understand the effect of power and pressure on the coating morphology, copper...
Article
Full-text available
Inductively Coupled Impulse Sputtering (ICIS) removes the need for a magnetron, whilst delivering equal or higher ion-to-neutral ratios compared to other ionised PVD technologies such as High Power Impulse Magnetron Sputtering (HIPIMS). This is especially advantageous for the sputtering of magnetic materials, as these would shunt the magnetic field...
Conference Paper
Inductively coupled impulse sputtering (ICIS) removes the need for a magnetron, while delivering equal or higher ion to neutral ratios compared to other ionised PVD technologies such as high power impulse magnetron sputtering (HIPIMS). This is especially advantageous for the sputtering of magnetic materials, as these would shunt the magnetic field...
Poster
Full-text available
Combining High Power Impulse Magnetron Sputtering with Unbalanced Magnetron Sputtering in one deposition process in a multiple source deposition system such as Hauzer 1000/4 is an effective approach which allows manipulation of the ionisation degree in the plasma therefore widens the process window for coating structure, texture, residual stress an...
Article
Full-text available
Sputtering magnetic materials with magnetron based systems has the disadvantage of field quenching and variation of alloy composition with target erosion. The advantage of eliminating magnetic fields in the chamber is that this enables sputtered particles to move along the electric field more uniformly. Inductively coupled impulse sputtering (ICIS)...
Article
Highly ionized pulse plasma processes (HIPP processes) like High Power Impulse Magnetron Sputtering HIPIMS and Modulated Pulse Power MPP have matured in recent years. Current research focuses on the development for industrial processes. HIPP processes offer a tool for tailoring the film properties and to improve hardness, density, refractive index,...
Article
Full-text available
Inductively coupled impulse sputtering (ICIS) removes the need for a magnetron, while delivering equal or higher ion to neutral ratios compared to other ionised PVD technologies such as high power impulse magnetron sputtering (HIPIMS). This is especially advantageous for the sputtering of magnetic materials, as these would shunt the magnetic field...

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