Damiano Marian

Damiano Marian
Autonomous University of Barcelona | UAB · Department of Electronic Engineering

PhD

About

37
Publications
3,375
Reads
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371
Citations
Introduction
Skills and Expertise
Additional affiliations
January 2012 - December 2014
Università degli Studi di Genova
Position
  • PhD Student

Publications

Publications (37)
Article
Inkjet‐Printed Devices A novel multi‐scale modeling technique to study transport in 2D materials inkjet‐printed devices is presented in article number 2100972 by Marta Perucchini, Damiano Marian, Gianluca Fiori, and co‐workers. The approach is aimed at reducing the gap between theory and experiments, being able to rationalize the behavior of fabric...
Article
Molybdenum disulfide (MoS2) has great potential as a two‐dimensional semiconductor for electronic and optoelectronic application, but its high sensitivity to environmental adsorbents and charge transfer from neighboring dielectrics can lead to device variability and instability. Aluminum oxide (Al2O3) is widely used as an encapsulation layer in (op...
Article
As 2D materials (2DMs) gain the research limelight as a technological option for obtaining on-demand printed low-cost integrated circuits with reduced environmental impact, theoretical methods able to provide the necessary fabrication guidelines acquire fundamental importance. Here, a multiscale modeling technique is exploited to study electronic t...
Article
Full-text available
Lateral heterostructures (LH) of monolayer-multilayer regions of the same noble transition metal dichalcogenide, such as platinum diselenide (PtSe2), are promising options for the fabrication of efficient two-dimensional field-effect transistors (FETs), by exploiting the dependence of the energy gap on the number of layers and the intrinsically hig...
Article
The precise engineering of the graphene crystal structure at the atom level, enabled by the recent advances in approaches to synthesis, has driven a renewed surge of interest in graphene nanoribbons (GNRs), the electronic properties of which can be tuned by the arrangement of atoms at their edges. This technological option opens up the possibility...
Article
Full-text available
The bandgap dependence on the number of atomic layers of some families of 2D materials can be exploited to engineer and use lateral heterostructures (LHs) as high-performance Field-Effect Transistors (FET). This option can provide very good lattice matching as well as high heterointerface quality. More importantly, this bandgap modulation with layer...
Preprint
The bandgap dependence on the number of atomic layers of some families of 2D-materials, can be exploited to engineer and use lateral heterostructures (LHs) as high-performance Field-Effect Transistors (FET). This option can provide very good lattice matching as well as high heterointerface quality. More importantly, this bandgap modulation with lay...
Article
Identifying the two-dimensional (2D) topological insulating (TI) state in new materials and its control are crucial aspects towards the development of voltage-controlled spintronic devices with low-power dissipation. Members of the 2D transition metal dichalcogenides have been recently predicted and experimentally reported as a new class of 2D TI m...
Article
Identifying the two-dimensional (2D) topological insulating (TI) state in new materials and its control are crucial aspects towards the development of voltage-controlled spintronic devices with low-power dissipation. Members of the 2D transition metal dichalcogenides have been recently predicted and experimentally reported as a new class of 2D TI m...
Article
Full-text available
Low-dimensional materials such as layered semiconductors or carbon nanotubes (CNTs) have been attracting increasing attention in the last few decades due to their inherent scaling properties, which become fundamental to sustain the scaling in electronic devices. Inspired by recent experimental results [Desai et al., Science 354, 99 (2016)], in this...
Article
Full-text available
We propose a device concept, based on monolayer stanene, able to provide highly polarized spin currents (up to 98%) with voltage-controlled spin polarization operating at room temperature and with small operating voltage (0.3 V). The concept exploits the presence of spin-polarized edge states in a stanene nanoribbon. The spin polarization of the to...
Article
The advent of graphene and related 2D materials has attracted the interest of the electron device research community in the past 14 years. The possibility to boost the transistor performance and the prospects to build novel device concepts with 2D materials and their heterostructures has awakened a strong experimental interest that requires continu...
Article
We explore the performance limits of monolayer InSe n-type and p-type FETs by means of first-principle simulations of carrier transport in nanoscale devices. We evaluate the impact on device performance of different device parameters, such as channel length, oxide thickness, and gate underlap. Finally, we assess the operation of a 32-bit CMOS ALU,...
Article
We propose two transistor concepts based on lateral heterostructures of monolayer MoS2, composed of adjacent regions of 1T (metallic) and 2H (semiconducting) phases, inspired by recent research showing the possibility to obtain such heterostructures by electron-beam irradiation. The first concept, the lateral heterostructure field-effect transistor...
Article
We explore nanoribbons from topological two-dimensional stanene as channel material in tunnel field effect transistors. This novel technological option offers the possibility to build pure one- dimensional (1D) channel devices (comprised of a 1D chain of atoms) due to localized states in correspondence of the nanoribbon edges. The investigation is...
Article
Without access to the full quantum state, modelling dissipation in an open system requires approximations. The physical soundness of such approximations relies on using realistic microscopic models of dissipation that satisfy completely positive dynamical maps. Here we present an approach based on the use of the Bohmian conditional wave function th...
Conference Paper
We propose two types of transistors based on lateral heterostructures of metallic and semiconducting phases of monolayer MoS 2 , whose top-down patterning has been recently demonstrated via electron beam irradiation [1]. The proposed transistors a MoS2 lateral heterostructure FET, and a “planar barristor”, a gate Schottky diode that is the full 2D...
Chapter
The aim of this chapter is to discuss to what extent one of the formulations (interpretations) of the quantum theory, i.e. Bohmian mechanics, which provides a singular tool to predict and explain the behavior of novel electron devices. It describes how Bohmian trajectories can help to solve them. The chapter summarizes postulates, equations and the...
Article
Bohmian mechanics is a theory that provides a consistent explanation of quantum phenomena in terms of point particles whose motion is guided by the wave function. In this theory, the state of a system of particles is defined by the actual positions of the particles and the wave function of the system; and the state of the system evolves determinist...
Article
When talking about noise in quantum devices two issues must be faced: how to model the evolution of an electronic system with scattering and how this noise is practically computed in a quantum device simulator. In the present paper, we address both problems from a practical and computational point of view. In particular, as the electronic quantum s...
Article
Quantum noise with exchange and tunneling is studied within time-dependent wave packets. A novel expression for the quantum noise of two identical particles injected simultaneously from opposite sides of a tunneling barrier is presented. Such quantum noise expression provides a physical (non-spurious) explanation for the experimental detection of t...
Article
From a quantum point of view, it is mandatory to include the measurement process when predicting the time-evolution of a quantum system. In this paper, a model to treat the measurement of the (TeraHertz) THz electrical current in quantum devices is presented. The explicit interaction of a quantum system with an external measuring apparatus is analy...
Article
Full-text available
Although time-independent models provide very useful dynamical information with a reduced computational burden, going beyond the quasi-static approximation provides enriched information when dealing with TeraHertz (THz) frequencies. In this work, the THz noise of dual-gate graphene transistors with DC polarization is analyzed from a careful simulat...
Article
Full-text available
Quantum transport is commonly studied with the use of quasi-particle infinite- extended states. This leads to a powerful formalism, the scattering-states theory, able to capture in compact formulas quantities of interest, such as average current, noise, etc.. However, when investigating the spatial size-dependence of quasi-particle wave packets in...
Article
Full-text available
The interest on weak measurements is rapidly growing during the last years as a unique tool to better understand and predict new quantum phenomena. Up to now many theoretical and experimental weak-measurement techniques deal with (relativistic) photons or cold atoms, but there is much less investigation on (non-relativistic) electrons in up-to-date...
Conference Paper
An effective single-particle Schrodinger equation to include dissipation into quantum devices is presented. This effective equation is fully understood in the context of Bohmian mechanics, a theory of particles and waves, where it is possible to define unambiguously the wave function of a subsystem, the so-called conditional wave function. In parti...
Conference Paper
In this work, quantum noise is reformulated taking into account the finite size of (normalizable) wave functions associated to electrons. We consider two-particle scattering with tunneling and exchange. This reformulation provides a richer phenomenology compared to timeindependent approaches, such as the Landauer-Buttiker formalism. It is proved th...
Article
Weak values allow the measurement of observables associated to non-commuting operators. Up to now, position-momentum weak values have been mainly developed for (relativistic) photons. In this work, a proposal for the measurement of such weak values in typical electronic devices is presented. Inspired by the classical Ramo-Shockley-Pellegrini theore...
Article
The ontology of Bohmian mechanics includes both the universal wave function (living in 3N-dimensional configuration space) and particles (living in ordinary 3-dimensional physical space). Proposals for understanding the physical significance of the wave function in this theory have included the idea of regarding it as a physically-real field in its...
Article
Full-text available
The study of electron transport in quantum devices is mainly devoted to DC properties, while the fluctuations of the electrical current (or voltage) around these DC values, the so-called quantum noise, are much less analyzed. The computation of quantum noise is intrinsically linked (by temporal correlations) to our ability to understand/compute the...
Article
In time independent scenarios, the exchange interaction for electrons can be introduced through the prohibition of sharing the same state, i.e. the Pauli exclusion principle. On the other hand, one can envision a richer phenomenology in time dependent scenarios in which, for example, the Pauli exclusion principle is relevant at the final time, but...
Conference Paper
The effect of exchange interaction on the scattering probabilities of two electrons injected simultaneously from different sources into a tunneling barrier is analyzed using time-dependent antisymmetric wave functions. Quantum noise for two electrons is calculated using this algorithm showing excellent agreement with Büttiker results for typical sc...
Conference Paper
Measuring a quantum system implies some kind of perturbation of the system itself. A novel approach to include the perturbation of the quantum electron device, i.e. the back-action, due to the TeraHertz (THz) measurement of the total current is presented. The approach is based on a microscopic description of the interaction between the quantum syst...
Article
It is shown that Bohmian mechanics applied to describe electron transport in open systems (in terms of waves and particles) leads to a quantum-trajectory Monte Carlo algorithm where randomness appears because of the uncertainties in the number of electrons, their energies and the initial positions of the trajectories. The usefulness of this formali...

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