Damiano Marian

• PhD
• University of Pisa

Fundamental research on two-dimensional (2D) magnetic systems based on van der Waals materials has been gaining traction rapidly since their recent discovery. With the increase of recent knowledge, it has become clear that such materials have also a strong potential for applications in devices that combine magnetism with electronics, optics, and na...

We present a simulation study of vertically stacked 2-D nanosheet field-effect transistors (NSFETs). The aim of this investigation is to assess the performance and potential of FinFET alternatives, i.e., gate-all-around (GAA) nanosheet FET at the ultimate nanosheet thickness, using 2-D materials (2DMs). In particular, our numerical study specifical...

We investigate the exploitation of one of the latest advancements in the processing of the two-dimensional materials (2DMs) lateral heterostructures (LH) for electronic applications, which involves the generation of subnanometer one-dimensional (1D) channels embedded in a 2D crystal. Such study is done through a multiscale approach combining Densit...

Fundamental research on two-dimensional (2D) magnetic systems based on van der Waals materials has been gaining traction rapidly since their recent discovery. With the increase of recent knowledge, it has become clear that such materials have also a strong potential for applications in devices that combine magnetism with electronics, optics, and na...

Intensive research has been carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance field effect transistors for integrated circuits ¹ . Fabricating transistors with ohmic contacts is a challenging task due to the formation of a high Schottky barrier that severely limits the performance of the transist...

Two-dimensional magnetic materials are at the forefront of the next generation of spintronic devices. The possibility to interface them with other van der Waals materials such as transition metal dichalcogenides has opened new possibilities for the observation of new and existing physical phenomena. Here, we present a proof-of-concept valleytronic...

The recent discovery of two-dimensional (2D) magnetic materials has opened new frontiers for the design of nanoscale spintronic devices. Among 2D nano-magnets, bilayer CrI 3 outstands for its antiferromagnetic interlayer coupling and its electrically-mediated magnetic state control. Here, leveraging on CrI 3 magnetic and electrical properties, we p...

NanoTCAD ViDES (Versatile DEvice Simulator) is an open-source suite of computing codes aimed at assessing the operation and the performance of nanoelectronic devices. It has served the computational nanoelectronic community for almost two decades and it is freely available to researchers around the world in its website (http://vides.nanotcad.com),...

Intensive research is carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance transistors for integrated circuits. Fabricating transistors with ohmic contacts is challenging due to the high Schottky barrier that severely limits the transistors' performance. Graphene-based heterostructures can be used i...

Van der Waals coupling with different stacking configurations is emerging as a powerful method to tune the optical and electronic properties of atomically thin two-dimensional materials. Here, we investigate 3R-stacked transition-metal dichalcogenides as a possible option for high-performance atomically thin field-effect transistors (FETs). We repo...

We present a simulation study of printed transistors composed of networks of two-dimensional materials flakes based on a multiscale approach. Printed devices are modeled by generating flake distribution using a Monte Carlo method, performing ab initio density functional theory (DFT) and nonequilibrium Green’s function (NEGF) calculations to obtain...

We explore through numerical simulations the possibility of exploiting 2-D materials (2DMs)-based field effect transistors (FETs) as read-out devices for quantum cascade (QC) detectors. For this purpose, a deep investigation of the device parameter space has been performed while considering different 2DMs as channel material, such as graphene and t...

Inkjet‐Printed Devices A novel multi‐scale modeling technique to study transport in 2D materials inkjet‐printed devices is presented in article number 2100972 by Marta Perucchini, Damiano Marian, Gianluca Fiori, and co‐workers. The approach is aimed at reducing the gap between theory and experiments, being able to rationalize the behavior of fabric...

Molybdenum disulfide (MoS2) has great potential as a two‐dimensional semiconductor for electronic and optoelectronic application, but its high sensitivity to environmental adsorbents and charge transfer from neighboring dielectrics can lead to device variability and instability. Aluminum oxide (Al2O3) is widely used as an encapsulation layer in (op...

As 2D materials (2DMs) gain the research limelight as a technological option for obtaining on-demand printed low-cost integrated circuits with reduced environmental impact, theoretical methods able to provide the necessary fabrication guidelines acquire fundamental importance. Here, a multiscale modeling technique is exploited to study electronic t...

Lateral heterostructures (LH) of monolayer-multilayer regions of the same noble transition metal dichalcogenide, such as platinum diselenide (PtSe2), are promising options for the fabrication of efficient two-dimensional field-effect transistors (FETs), by exploiting the dependence of the energy gap on the number of layers and the intrinsically hig...

van der Waals heterostructures are promising candidates for bringing the materials-on-demand paradigm into reality [F. Capasso, Science 235, 172 (1987)], since their electrical properties can be engineered by playing on the several available degrees of freedom, as the number of layers, the materials, and the order in which they are stacked. In the...

The precise engineering of the graphene crystal structure at the atom level, enabled by the recent advances in approaches to synthesis, has driven a renewed surge of interest in graphene nanoribbons (GNRs), the electronic properties of which can be tuned by the arrangement of atoms at their edges. This technological option opens up the possibility...

The bandgap dependence on the number of atomic layers of some families of 2D materials can be exploited to engineer and use lateral heterostructures (LHs) as high-performance Field-Effect Transistors (FET). This option can provide very good lattice matching as well as high heterointerface quality. More importantly, this bandgap modulation with layer...

The bandgap dependence on the number of atomic layers of some families of 2D-materials, can be exploited to engineer and use lateral heterostructures (LHs) as high-performance Field-Effect Transistors (FET). This option can provide very good lattice matching as well as high heterointerface quality. More importantly, this bandgap modulation with lay...

Identifying the two-dimensional (2D) topological insulating (TI) state in new materials and its control are crucial aspects towards the development of voltage-controlled spintronic devices with low-power dissipation. Members of the 2D transition metal dichalcogenides have been recently predicted and experimentally reported as a new class of 2D TI m...

Identifying the two-dimensional (2D) topological insulating (TI) state in new materials and its control are crucial aspects towards the development of voltage-controlled spintronic devices with low-power dissipation. Members of the 2D transition metal dichalcogenides have been recently predicted and experimentally reported as a new class of 2D TI m...

We propose a device concept, based on monolayer stanene, able to provide highly polarized spin currents (up to a $98\%$) with voltage-controlled spin polarization operating at room temperature and with small operating voltage ($0.3$ V). The concept exploits the presence of spin-polarized edge states in a stanene nanoribbon. The spin polarization of...

Low-dimensional materials such as layered semiconductors or carbon nanotubes (CNTs) have been attracting increasing attention in the last few decades due to their inherent scaling properties, which become fundamental to sustain the scaling in electronic devices. Inspired by recent experimental results [Desai et al., Science 354, 99 (2016)], in this...

We propose a device concept, based on monolayer stanene, able to provide highly polarized spin currents (up to 98%) with voltage-controlled spin polarization operating at room temperature and with small operating voltage (0.3 V). The concept exploits the presence of spin-polarized edge states in a stanene nanoribbon. The spin polarization of the to...

The advent of graphene and related 2D materials has attracted the interest of the electron device research community in the past 14 years. The possibility to boost the transistor performance and the prospects to build novel device concepts with 2D materials and their heterostructures has awakened a strong experimental interest that requires continu...

We explore nanoribbons from topological two-dimensional stanene as channel material in tunnel field effect transistors. This novel technological option offers the possibility to build pure one-dimensional (1D) channel devices (comprised of a 1D chain of atoms) due to localized states in correspondence of the nanoribbon edges. The investigation is b...

In this paper we propose two transistor concepts based on lateral heterostructures of monolayer MoS$_2$, composed of adjacent regions of 1T (metallic) and 2H (semiconducting) phases, inspired by recent research showing the possibility to obtain such heterostructures by electron beam irradiation. The first concept, the lateral heterostructure field-...

We explore the performance limits of monolayer InSe n-type and p-type FETs by means of first-principle simulations of carrier transport in nanoscale devices. We evaluate the impact on device performance of different device parameters, such as channel length, oxide thickness, and gate underlap. Finally, we assess the operation of a 32-bit CMOS ALU,...

We propose two transistor concepts based on lateral heterostructures of monolayer MoS2, composed of adjacent regions of 1T (metallic) and 2H (semiconducting) phases, inspired by recent research showing the possibility to obtain such heterostructures by electron-beam irradiation. The first concept, the lateral heterostructure field-effect transistor...

We explore nanoribbons from topological two-dimensional stanene as channel material in tunnel field effect transistors. This novel technological option offers the possibility to build pure one- dimensional (1D) channel devices (comprised of a 1D chain of atoms) due to localized states in correspondence of the nanoribbon edges. The investigation is...

Without access to the full quantum state, modelling dissipation in an open system requires approximations. The physical soundness of such approximations relies on using realistic microscopic models of dissipation that satisfy completely positive dynamical maps. Here we present an approach based on the use of the Bohmian conditional wave function th...

Without access to the full quantum state, modeling dissipation in an open system requires approximations. The physical soundness of such approximations relies on using realistic microscopic models of dissipation that satisfy completely positive dynamical maps. Here we present an approach based on the use of the Bohmian conditional wave function tha...

We propose two types of transistors based on lateral heterostructures of metallic and semiconducting phases of monolayer MoS 2 , whose top-down patterning has been recently demonstrated via electron beam irradiation [1]. The proposed transistors a MoS2 lateral heterostructure FET, and a “planar barristor”, a gate Schottky diode that is the full 2D...

The aim of this chapter is to discuss to what extent one of the formulations (interpretations) of the quantum theory, i.e. Bohmian mechanics, which provides a singular tool to predict and explain the behavior of novel electron devices. It describes how Bohmian trajectories can help to solve them. The chapter summarizes postulates, equations and the...

Bohmian mechanics is a theory that provides a consistent explanation of quantum phenomena in terms of point particles whose motion is guided by the wave function. In this theory, the state of a system of particles is defined by the actual positions of the particles and the wave function of the system; and the state of the system evolves determinist...

When talking about noise in quantum devices two issues must be faced: how to model the evolution of an electronic system with scattering and how this noise is practically computed in a quantum device simulator. In the present paper, we address both problems from a practical and computational point of view. In particular, as the electronic quantum s...

Quantum noise with exchange and tunneling is studied within time-dependent wave packets. A novel expression for the quantum noise of two identical particles injected simultaneously from opposite sides of a tunneling barrier is presented. Such quantum noise expression provides a physical (non-spurious) explanation for the experimental detection of t...

From a quantum point of view, it is mandatory to include the measurement process when predicting the time-evolution of a quantum system. In this paper, a model to treat the measurement of the (TeraHertz) THz electrical current in quantum devices is presented. The explicit interaction of a quantum system with an external measuring apparatus is analy...

From a quantum point of view, it is mandatory to include the measurement process when predicting the time-evolution of a quantum system. In this paper, a model to treat the measurement of the (TeraHertz) THz electrical current in quantum devices is presented. The explicit interaction of a quantum system with an external measuring apparatus is analy...

Although time-independent models provide very useful dynamical information with a reduced computational burden, going beyond the quasi-static approximation provides enriched information when dealing with TeraHertz (THz) frequencies. In this work, the THz noise of dual-gate graphene transistors with DC polarization is analyzed from a careful simulat...

Quantum transport is commonly studied with the use of quasi-particle infinite- extended states. This leads to a powerful formalism, the scattering-states theory, able to capture in compact formulas quantities of interest, such as average current, noise, etc.. However, when investigating the spatial size-dependence of quasi-particle wave packets in...

The interest on weak measurements is rapidly growing during the last years as a unique tool to better understand and predict new quantum phenomena. Up to now many theoretical and experimental weak-measurement techniques deal with (relativistic) photons or cold atoms, but there is much less investigation on (non-relativistic) electrons in up-to-date...

An effective single-particle Schrodinger equation to include dissipation into quantum devices is presented. This effective equation is fully understood in the context of Bohmian mechanics, a theory of particles and waves, where it is possible to define unambiguously the wave function of a subsystem, the so-called conditional wave function. In parti...

In this work, quantum noise is reformulated taking into account the finite size of (normalizable) wave functions associated to electrons. We consider two-particle scattering with tunneling and exchange. This reformulation provides a richer phenomenology compared to timeindependent approaches, such as the Landauer-Buttiker formalism. It is proved th...

Weak values allow the measurement of observables associated to non-commuting operators. Up to now, position-momentum weak values have been mainly developed for (relativistic) photons. In this work, a proposal for the measurement of such weak values in typical electronic devices is presented. Inspired by the classical Ramo-Shockley-Pellegrini theore...

In time independent scenarios, the exchange interaction for electrons can be introduced through the prohibition of sharing the same state, i.e. the Pauli exclusion principle. On the other hand, one can envision a richer phenomenology in time dependent scenarios in which, for example, the Pauli exclusion principle is relevant at the final time, but...

The ontology of Bohmian mechanics includes both the universal wave function (living in 3N-dimensional configuration space) and particles (living in ordinary 3-dimensional physical space). Proposals for understanding the physical significance of the wave function in this theory have included the idea of regarding it as a physically-real field in its...

The study of electron transport in quantum devices is mainly devoted to DC properties, while the fluctuations of the electrical current (or voltage) around these DC values, the so-called quantum noise, are much less analyzed. The computation of quantum noise is intrinsically linked (by temporal correlations) to our ability to understand/compute the...

The effect of exchange interaction on the scattering probabilities of two electrons injected simultaneously from different sources into a tunneling barrier is analyzed using time-dependent antisymmetric wave functions. Quantum noise for two electrons is calculated using this algorithm showing excellent agreement with Büttiker results for typical sc...

Measuring a quantum system implies some kind of perturbation of the system itself. A novel approach to include the perturbation of the quantum electron device, i.e. the back-action, due to the TeraHertz (THz) measurement of the total current is presented. The approach is based on a microscopic description of the interaction between the quantum syst...

It is shown that Bohmian mechanics applied to describe electron transport in open systems (in terms of waves and particles) leads to a quantum-trajectory Monte Carlo algorithm where randomness appears because of the uncertainties in the number of electrons, their energies and the initial positions of the trajectories. The usefulness of this formali...