Claire Besancon

Claire Besancon
III-V Lab · Epitaxy

PhD

About

22
Publications
4,187
Reads
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132
Citations
Citations since 2017
22 Research Items
132 Citations
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201720182019202020212022202301020304050
201720182019202020212022202301020304050
Additional affiliations
September 2017 - September 2020
III-V Lab
Position
  • PhD Student

Publications

Publications (22)
Article
Full-text available
The integration of III-V multi-junction solar cells on Si substrates is currently one of the most promising possibilities to combine high photovoltaic performance with a reduction of the manufacturing costs. In this work, we propose a prospective study for the realization of an InP/InGaAs tandem solar cell lattice-matched to InP on a commercially a...
Article
Full-text available
We demonstrate a heterogeneously integrated III-V-on-SOI distributed feedback laser with a low grating strength (κ < 40 cm ⁻¹ ) and a narrow linewidth of Δν = 118 kHz. The laser operates single mode with a side-mode suppression ratio over 45 dB, provides a single-sided waveguide-coupled output power of 22 mW (13.4 dBm) and has a wall-plug efficienc...
Article
Full-text available
The tremendous demand for low-cost, low-consumption and high-capacity optical transmitters in data centers challenges the current InP-photonics platform. The use of silicon (Si) photonics platform to fabricate photonic integrated circuits (PICs) is a promising approach for low-cost large-scale fabrication considering the CMOS-technology maturity an...
Article
Full-text available
Heterogeneously integrated III-V/Si lasers and semiconductor optical amplifiers (SOAs) are key devices for integrated photonics applications requiring miniaturized on-chip light sources, such as in optical communications, sensing, or spectroscopy. In this work, we present a widely tunable laser co-integrated with a semiconductor optical amplifier i...
Conference Paper
Vertical p-i-n lasers integrated by wafer-bonding and regrowth on a heterogeneous InP-on-SOI wafer are presented. We demonstrate for the first time lasers based on regrown III-V active regions efficiently coupled to Si-photonic DBR cavities.
Article
MOVPE regrowth of III-V materials on a directly-bonded InP-SiO 2 /Si (InPoSi) membrane is of particular interest to transpose the III-V mature multi-regrowth technologies [1][2][3] from the InP substrate classical platform into the hybrid III-V on Si platform [4]. MOVPE requires high-temperature elevation, typically above 600°C. We have shown for t...
Thesis
Full-text available
Ce travail présente une approche d’intégration de semiconducteurs III-V sur silicium. L’objectif est de réaliser des sources laser multi-longueur d’onde émettant en bande C pour les télécommunications optiques à partir d’une croissance épaisse de matériaux III-V sur fine couche d’InP collée sur silicium oxydé (InP-SiO2/Si = InPoSi).Afin d’étudier l...
Article
In this work, we present the fabrication process of a $3~\mu \text{m}$ -thick AlGaInAs-based vertical p-i-n laser diode structure grown on a directly bonded InP-SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Si (InPoSi) substrate. High-quality epitaxial growth on InPoSi is reported. Bas...
Conference Paper
Fabry-Perot laser arrays based on vertical p-i-n laser diode structures grown on InP layer directly bonded to Si wafer is presented. Lasing emission covering the C+L bands is achieved by means of a single-epitaxy Selective Area Growth (SAG) technology.
Article
Hybrid integration of III-V materials onto silicon by direct bonding technique is one of the mature and promising approaches to develop advanced photonic integrated devices into the Silicon Photonics Platform (SPP). In this approach, the III V material stack is grown on an InP wafer in a unique epitaxial step prior to the direct bonding process ont...
Article
Hybrid integration of III‐V materials onto silicon by wafer bonding technique is one of the mature and promising approaches to develop advanced photonic integrated devices into the Silicon Photonics Platform (SPP). Epitaxial regrowth of III‐V materials on InP thin seed layer bonded to an oxidized silicon wafer has shown its potential to extend the...
Article
Full-text available
Heterogeneous integration of III-V materials onto silicon photonics has experienced enormous progress in the last few years, setting the groundwork for the implementation of complex on-chip optical systems that go beyond single device performance. Recent advances on the field are expected to impact on next generation optical communications to attai...
Article
Monolithic two‐terminal III‐V on Si dual‐junction solar cells, designed for low concentration applications, were fabricated by means of surface‐activated direct wafer bonding. The III‐V top cell is a heterojunction formed by an n‐Ga0.5In0.5P emitter and a p‐Al0.2Ga0.8As base. An efficiency of 21.1 ± 1.5% at one sun and 23.7 ± 1.7% at 10 suns is dem...

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